WO2006011607A8 - レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 - Google Patents

レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法

Info

Publication number
WO2006011607A8
WO2006011607A8 PCT/JP2005/013976 JP2005013976W WO2006011607A8 WO 2006011607 A8 WO2006011607 A8 WO 2006011607A8 JP 2005013976 W JP2005013976 W JP 2005013976W WO 2006011607 A8 WO2006011607 A8 WO 2006011607A8
Authority
WO
WIPO (PCT)
Prior art keywords
forming resist
protective film
resist film
same
resist pattern
Prior art date
Application number
PCT/JP2005/013976
Other languages
English (en)
French (fr)
Other versions
WO2006011607A1 (ja
Inventor
Keita Ishizuka
Kotaro Endo
Tomoyuki Hirano
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Keita Ishizuka
Kotaro Endo
Tomoyuki Hirano
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd, Keita Ishizuka, Kotaro Endo, Tomoyuki Hirano filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to EP05767418A priority Critical patent/EP1788439A4/en
Priority to US11/659,006 priority patent/US7951523B2/en
Publication of WO2006011607A1 publication Critical patent/WO2006011607A1/ja
Publication of WO2006011607A8 publication Critical patent/WO2006011607A8/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)

Abstract

　液浸露光プロセスにおいて、水を始めとした各種浸漬液を用いた液浸露光中のレジスト膜の変質および使用浸漬液の変質を同時に防止し、かつ処理工程数の増加を来すことなく、レジスト膜の引き置き耐性を向上させることができ、液浸露光を用いた高解像性レジストパターンの形成を可能とする。アルカリに可溶であるポリマーと架橋剤とこれらを溶解可能な溶媒とを少なくとも構成成分として組成物とし、この組成物を用いて使用するレジスト膜の表面に保護膜を形成する。
PCT/JP2005/013976 2004-07-30 2005-07-29 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 WO2006011607A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05767418A EP1788439A4 (en) 2004-07-30 2005-07-29 MATERIAL FOR FORMING A RESISTANCE FILM AND METHOD FOR FORMING RESIST PATTERN THEREWITH
US11/659,006 US7951523B2 (en) 2004-07-30 2005-07-29 Material for forming resist protective film and method for forming resist pattern using same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004224811 2004-07-30
JP2004-224811 2004-07-30
JP2004228696A JP4368267B2 (ja) 2004-07-30 2004-08-04 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP2004-228696 2004-08-04

Publications (2)

Publication Number Publication Date
WO2006011607A1 WO2006011607A1 (ja) 2006-02-02
WO2006011607A8 true WO2006011607A8 (ja) 2008-02-07

Family

ID=35786351

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/013976 WO2006011607A1 (ja) 2004-07-30 2005-07-29 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法

Country Status (6)

Country Link
US (1) US7951523B2 (ja)
EP (1) EP1788439A4 (ja)
JP (1) JP4368267B2 (ja)
KR (1) KR20070039970A (ja)
TW (1) TW200609683A (ja)
WO (1) WO2006011607A1 (ja)

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JP4368266B2 (ja) 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4322205B2 (ja) 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法
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JP4368266B2 (ja) 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4322205B2 (ja) * 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法
JP2006301524A (ja) * 2005-04-25 2006-11-02 Tokyo Ohka Kogyo Co Ltd 保護膜形成用材料およびこれを用いたレジストパターン形成方法
JP2007078744A (ja) * 2005-09-09 2007-03-29 Tokyo Ohka Kogyo Co Ltd 保護膜形成用材料およびこれを用いたホトレジストパターン形成方法

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JP4368267B2 (ja) 2009-11-18
EP1788439A4 (en) 2009-04-08
US20090197199A1 (en) 2009-08-06
JP2006064712A (ja) 2006-03-09
TW200609683A (en) 2006-03-16
US7951523B2 (en) 2011-05-31
KR20070039970A (ko) 2007-04-13
WO2006011607A1 (ja) 2006-02-02

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