KR20080114691A - 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법 Download PDF

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Publication number
KR20080114691A
KR20080114691A KR1020087020355A KR20087020355A KR20080114691A KR 20080114691 A KR20080114691 A KR 20080114691A KR 1020087020355 A KR1020087020355 A KR 1020087020355A KR 20087020355 A KR20087020355 A KR 20087020355A KR 20080114691 A KR20080114691 A KR 20080114691A
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KR
South Korea
Prior art keywords
liquid immersion
immersion member
substrate
liquid
exposure
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KR1020087020355A
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English (en)
Korean (ko)
Inventor
야스후미 니시이
Original Assignee
가부시키가이샤 니콘
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Publication of KR20080114691A publication Critical patent/KR20080114691A/ko

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975Assembly, maintenance, transport or storage of apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020087020355A 2006-03-13 2007-03-09 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법 KR20080114691A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00067476 2006-03-13
JP2006067476 2006-03-13

Publications (1)

Publication Number Publication Date
KR20080114691A true KR20080114691A (ko) 2008-12-31

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KR1020087020355A KR20080114691A (ko) 2006-03-13 2007-03-09 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법

Country Status (6)

Country Link
US (1) US8035800B2 (fr)
EP (1) EP1995768A4 (fr)
JP (1) JP2007281441A (fr)
KR (1) KR20080114691A (fr)
TW (1) TW200809915A (fr)
WO (1) WO2007105645A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7841352B2 (en) 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US9297098B2 (en) * 2007-12-19 2016-03-29 Saint-Gobain Adfors Canada, Ltd. Foldable reinforcing web
NL1036579A1 (nl) * 2008-02-19 2009-08-20 Asml Netherlands Bv Lithographic apparatus and methods.
US8896806B2 (en) 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
NL2004547A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv An immersion lithographic apparatus and a device manufacturing method.
CN102500566B (zh) * 2011-09-22 2014-01-15 清华大学 适于危险环境使用的免维修泥浆洗涤器及其工作方法
US9785281B2 (en) 2011-11-09 2017-10-10 Microsoft Technology Licensing, Llc. Acoustic touch sensitive testing
US9317147B2 (en) 2012-10-24 2016-04-19 Microsoft Technology Licensing, Llc. Input testing tool
WO2017084797A1 (fr) * 2015-11-20 2017-05-26 Asml Netherlands B.V. Appareil lithographique et procédé de fonctionnement d'appareil lithographique
WO2020064265A1 (fr) 2018-09-24 2020-04-02 Asml Netherlands B.V. Outil de traitement et procédé d'inspection

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
CN1244018C (zh) 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands Bv In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1123692A (ja) 1997-06-30 1999-01-29 Sekisui Chem Co Ltd 地中探査用アンテナ
JPH1128790A (ja) 1997-07-09 1999-02-02 Asahi Chem Ind Co Ltd 紫外線遮蔽用熱可塑性樹脂板
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
US6020964A (en) 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
JP4264676B2 (ja) 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
CN100578876C (zh) 1998-03-11 2010-01-06 株式会社尼康 紫外激光装置以及使用该紫外激光装置的曝光装置和曝光方法
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
WO2001035168A1 (fr) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Lithographie interferentielle utilisant des faisceaux de balayage a verrouillage de phase
DE10011130A1 (de) 2000-03-10 2001-09-13 Mannesmann Vdo Ag Entlüftungseinrichtung für einen Kraftstoffbehälter
JP4714403B2 (ja) 2001-02-27 2011-06-29 エーエスエムエル ユーエス,インコーポレイテッド デュアルレチクルイメージを露光する方法および装置
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
WO2003025173A1 (fr) 2001-09-17 2003-03-27 Takeshi Imanishi Nouveaux derives oligonucleotidiques antisens vis-a-vis du virus de l'hepatite c
EP1442118A2 (fr) 2001-11-08 2004-08-04 DeveloGen Aktiengesellschaft für entwicklungsbiologische Forschung Proteine men, gst2, rab-rp1, csp, proteine a f-box lilina/fbl7, abc50, coronine, sec61 alpha ou vhappa1-1 ou proteines homologues jouant un role dans la regulation de l'homeostasie energetique
US6708102B2 (en) 2002-08-01 2004-03-16 Ford Global Technologies, Llc Method and system for predicting cylinder air charge in an internal combustion engine for a future cylinder event
CN100462844C (zh) 2002-08-23 2009-02-18 株式会社尼康 投影光学系统、微影方法、曝光装置及使用此装置的方法
DE10241894A1 (de) 2002-09-10 2004-03-11 Robert Bosch Gmbh Scheibenwischvorrichtung
DE60211520T2 (de) 2002-10-09 2006-12-14 Stmicroelectronics S.R.L., Agrate Brianza Anordnung zur Steuerung des Betriebs eines physikalischen Systems wie zum Beispiel einer Brennstoffzelle in elektrischen Fahrzeugen
US6893629B2 (en) 2002-10-30 2005-05-17 Isp Investments Inc. Delivery system for a tooth whitener
CN101349876B (zh) * 2002-11-12 2010-12-01 Asml荷兰有限公司 光刻装置和器件制造方法
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
EP2495613B1 (fr) 2002-11-12 2013-07-31 ASML Netherlands B.V. Appareil lithographique
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4423559B2 (ja) * 2002-12-03 2010-03-03 株式会社ニコン 汚染物質除去方法
CN100370533C (zh) 2002-12-13 2008-02-20 皇家飞利浦电子股份有限公司 用于照射层的方法和用于将辐射导向层的装置
CN1316482C (zh) 2002-12-19 2007-05-16 皇家飞利浦电子股份有限公司 照射层上斑点的方法和装置
JP4364806B2 (ja) 2002-12-19 2009-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上にスポットを照射する方法及び装置
KR101506408B1 (ko) 2003-02-26 2015-03-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
SG10201803122UA (en) * 2003-04-11 2018-06-28 Nikon Corp Immersion lithography apparatus and device manufacturing method
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
SG160223A1 (en) 2003-05-06 2010-04-29 Nikon Corp Projection optical system, exposure apparatus, and exposure method
JP4288426B2 (ja) 2003-09-03 2009-07-01 株式会社ニコン 液浸リソグラフィのための流体の供給装置及び方法
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
KR101682884B1 (ko) 2003-12-03 2016-12-06 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품
JP4513534B2 (ja) * 2003-12-03 2010-07-28 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4427379B2 (ja) 2003-12-03 2010-03-03 株式会社徳力本店 気密封止用材およびその製造方法
EP1697798A2 (fr) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Objectif de projection a grande ouverture et surface d'extremite plane
WO2005059645A2 (fr) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Objectif de projection de microlithographie comprenant des éléments cristallins
JP2005268412A (ja) * 2004-03-17 2005-09-29 Nikon Corp 露光装置、露光方法、及びデバイスの製造方法
US20070103661A1 (en) * 2004-06-04 2007-05-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4517341B2 (ja) * 2004-06-04 2010-08-04 株式会社ニコン 露光装置、ノズル部材、及びデバイス製造方法
KR101264936B1 (ko) 2004-06-04 2013-05-15 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101421915B1 (ko) * 2004-06-09 2014-07-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
CN101052916B (zh) 2004-09-30 2010-05-12 株式会社尼康 投影光学设备和曝光装置
US20070285634A1 (en) * 2004-11-19 2007-12-13 Nikon Corporation Maintenance Method, Exposure Method, Exposure Apparatus, And Method For Producing Device
KR101339887B1 (ko) * 2004-12-06 2013-12-10 가부시키가이샤 니콘 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법
JP4752473B2 (ja) * 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法

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Publication number Publication date
EP1995768A1 (fr) 2008-11-26
WO2007105645A1 (fr) 2007-09-20
EP1995768A4 (fr) 2013-02-06
US8035800B2 (en) 2011-10-11
US20080013064A1 (en) 2008-01-17
JP2007281441A (ja) 2007-10-25
TW200809915A (en) 2008-02-16

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