KR20070116684A - 3차원 미소 성형체 제조용 감광성 드라이 필름 및 감광성수지 조성물 - Google Patents
3차원 미소 성형체 제조용 감광성 드라이 필름 및 감광성수지 조성물 Download PDFInfo
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- KR20070116684A KR20070116684A KR1020077025288A KR20077025288A KR20070116684A KR 20070116684 A KR20070116684 A KR 20070116684A KR 1020077025288 A KR1020077025288 A KR 1020077025288A KR 20077025288 A KR20077025288 A KR 20077025288A KR 20070116684 A KR20070116684 A KR 20070116684A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133526—Lenses, e.g. microlenses or Fresnel lenses
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Polymerisation Methods In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (7)
- 적어도 커버 필름과 당해 커버 필름 상에 형성된 감광성 수지 조성물층으로 구성되고, 상기 감광성 수지 조성물층이 투명 기판 상에 적층된 후, 투명 기판측으로부터 화학선을 광량이 상기 투명 기판의 평면을 따라 변화하도록 조사함으로써 3차원 미소 성형체의 경화 잠상이 내부에 형성되는 3차원 미소 성형체 제조용 감광성 드라이 필름으로서,상기 감광성 수지 조성물층이, 적어도 하나의 관능기를 가지는 중합성 모노머를 주성분으로 하는 수지 성분과, 광중합 개시제를 함유하여 이루어지는 감광성 수지 조성물을 도포, 건조시킨 것인 것을 특징으로 하는 3차원 미소 성형체 제조용 감광성 드라이 필름.
- 제1항에 있어서,상기 감광성 수지 조성물은, 그 도포막을 노광 파장 390∼430nm로 노광 현상한 경우, 얻어진 경화막이, 노광량을 x(mJ/cm2)로 나타내고, 당해 노광량 x에 대한 경화 막 두께를 현상 전의 도포 막 두께 h(㎛)에 대한 현상 후의 잔막 두께 Δh(㎛)의 비 y(=Δh/h)로 나타내고, 대수화한 x(Ln(x))와 y의 관계가 y=α·Ln(x)±β로 표시되고, 상기 α가 0.35≤α≤0.78로 되는 감광 특성을 가지는 것을 특징으로 하는 3차원 미소 성형체 제조용 감광성 드라이 필름.
- 제1항 또는 제2항에 있어서,상기 감광성 수지 조성물이 성분 중의 광중합 개시제로서, 디알킬벤조페논계 화합물 및 헥사아릴비스이미다졸계 화합물의 적어도 어느 것인가를 함유하는 것을 특징으로 하는 3차원 미소 성형체 제조용 감광성 드라이 필름.
- 제1항에 있어서,상기 감광성 수지 조성물이 성분 중의 중합성 모노머로서 1분자 중에 4관능 이상의 중합 가능한 에틸렌 불포화기를 가지는 화합물의 적어도 1종을 포함하는 것을 특징으로 하는 3차원 미소 성형체 제조용 감광성 드라이 필름.
- 화학선 노광량(mJ/cm2)을 x로 하고, 그 노광량에 의한 수지 경화량을 현상 전의 도포 막 두께 h(㎛)에 대한 현상 후의 잔막 두께 Δh(㎛)의 비 y(=Δh/h)로 나타내고, x와 y의 관계식 y=α·Ln(x)±β를 구한 경우, 0.35≤α≤0.78인 광감도를 가지는 것을 특징으로 하는 감광성 수지 조성물.
- 제5항에 있어서,화학적 조성으로서, 적어도 하나의 관능기를 가지는 중합성 모노머를 주성분으로 하는 수지 성분과, 광중합 개시제를 함유하고, 상기 광중합 개시제로서 디알 킬벤조페논계 화합물 및 헥사아릴비스이미다졸계 화합물의 적어도 어느 것인가를 함유하는 것을 특징으로 하는 감광성 수지 조성물.
- 제5항 또는 제6항에 있어서,상기 중합성 모노머로서, 1분자 중에 4관능 이상의 중합 가능한 에틸렌 불포화기를 가지는 화합물의 적어도 1종을 포함하는 것을 특징으로 하는 감광성 수지 조성물.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005139912A JP4749760B2 (ja) | 2005-05-12 | 2005-05-12 | 三次元微小成形体の製造方法 |
JPJP-P-2005-00139912 | 2005-05-12 |
Publications (2)
Publication Number | Publication Date |
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KR20070116684A true KR20070116684A (ko) | 2007-12-10 |
KR100904576B1 KR100904576B1 (ko) | 2009-06-25 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020077025288A KR100904576B1 (ko) | 2005-05-12 | 2006-05-11 | 3차원 미소 성형체 제조용 감광성 드라이 필름 및 감광성수지 조성물 |
Country Status (7)
Country | Link |
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US (1) | US20090286020A1 (ko) |
JP (1) | JP4749760B2 (ko) |
KR (1) | KR100904576B1 (ko) |
CN (2) | CN101185025A (ko) |
DE (1) | DE112006001192T5 (ko) |
TW (1) | TWI328716B (ko) |
WO (1) | WO2006121113A1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4987521B2 (ja) * | 2007-03-14 | 2012-07-25 | 旭化成イーマテリアルズ株式会社 | 感光性樹脂組成物 |
JP5277679B2 (ja) * | 2007-03-30 | 2013-08-28 | 日立化成株式会社 | 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
JP5494847B2 (ja) * | 2007-03-30 | 2014-05-21 | 日立化成株式会社 | 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
WO2009116182A1 (ja) | 2008-03-21 | 2009-09-24 | 日立化成工業株式会社 | 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
JP5685400B2 (ja) * | 2010-08-06 | 2015-03-18 | 株式会社クラレ | 微細構造体の製造方法 |
CN102540284B (zh) * | 2012-02-07 | 2013-11-20 | 中国科学院光电技术研究所 | 基于负性光刻胶和掩膜移动曝光工艺的微透镜阵列制备方法 |
JP6150178B2 (ja) * | 2012-07-02 | 2017-06-21 | パナソニックIpマネジメント株式会社 | 光導波路および光導波路作製用のドライフィルム |
JP6460672B2 (ja) * | 2013-09-18 | 2019-01-30 | キヤノン株式会社 | 膜の製造方法、光学部品の製造方法、回路基板の製造方法及び電子部品の製造方法 |
US12042984B2 (en) | 2016-11-17 | 2024-07-23 | Orbotech Ltd. | Hybrid, multi-material 3D printing |
WO2020044918A1 (ja) * | 2018-08-30 | 2020-03-05 | 日産化学株式会社 | ネガ型感光性樹脂組成物 |
US20230042586A1 (en) * | 2021-08-05 | 2023-02-09 | Toyota Motor Engineering & Manufacturing North America, Inc. | Interference lithography using reflective base surfaces |
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JPS61199916A (ja) * | 1985-03-01 | 1986-09-04 | Asahi Chem Ind Co Ltd | 立体成形品の製造方法 |
JPH0820733B2 (ja) * | 1988-08-11 | 1996-03-04 | 富士写真フイルム株式会社 | ドライフイルムレジスト用光重合性組成物 |
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2005
- 2005-05-12 JP JP2005139912A patent/JP4749760B2/ja active Active
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2006
- 2006-05-08 TW TW095116292A patent/TWI328716B/zh active
- 2006-05-11 US US11/913,345 patent/US20090286020A1/en not_active Abandoned
- 2006-05-11 CN CNA2006800156507A patent/CN101185025A/zh active Pending
- 2006-05-11 DE DE112006001192T patent/DE112006001192T5/de not_active Withdrawn
- 2006-05-11 WO PCT/JP2006/309471 patent/WO2006121113A1/ja active Application Filing
- 2006-05-11 KR KR1020077025288A patent/KR100904576B1/ko active IP Right Grant
- 2006-05-11 CN CN2011101586844A patent/CN102226868A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20090286020A1 (en) | 2009-11-19 |
KR100904576B1 (ko) | 2009-06-25 |
CN102226868A (zh) | 2011-10-26 |
WO2006121113A1 (ja) | 2006-11-16 |
CN101185025A (zh) | 2008-05-21 |
JP2006317698A (ja) | 2006-11-24 |
JP4749760B2 (ja) | 2011-08-17 |
DE112006001192T5 (de) | 2008-02-28 |
TW200708889A (en) | 2007-03-01 |
TWI328716B (en) | 2010-08-11 |
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