KR20060045894A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR20060045894A KR20060045894A KR1020050037081A KR20050037081A KR20060045894A KR 20060045894 A KR20060045894 A KR 20060045894A KR 1020050037081 A KR1020050037081 A KR 1020050037081A KR 20050037081 A KR20050037081 A KR 20050037081A KR 20060045894 A KR20060045894 A KR 20060045894A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- region
- igbt
- collector
- impurity concentration
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 239000012535 impurity Substances 0.000 claims abstract description 41
- 230000015556 catabolic process Effects 0.000 abstract description 33
- 230000003071 parasitic effect Effects 0.000 abstract description 28
- 230000001965 increasing effect Effects 0.000 description 8
- 230000001052 transient effect Effects 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Power Conversion In General (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (3)
- 제 1 및 제 2주표면을 갖는 제 1도전형의 반도체층과,이 반도체층의 제 1주표면에 형성된 제 2도전형의 베이스 영역과,이 베이스 영역 안에 형성된 제 1도전형의 에미터 영역과,이 반도체층의 제 2주표면에, 이 반도체층 측에서 순차적으로 적층된 제 1도전형의 버퍼층 및 제 2도전형의 콜렉터층을 포함하고, 이 에미터 영역과 이 콜렉터 영역 사이에 흐르는 전류를 이 베이스 영역에서 제어하는 반도체 장치에 있어서,이 버퍼층의 제 1도전형의 불순물 농도의 최대값이 대략 5 ×1015cm-3이하이고, 이 콜렉터층의 제 2도전형의 불순물 농도의 최대값이 대략 1 ×1017cm-3이상이며, 이 콜렉터층의 제 2도전형의 불순물 농도의 최대값이, 이 버퍼층의 제 1도전형의 불순물 농도의 최대값의 100배 이상이며,이 콜렉터층의 막 두께가, 대략 1μm이상인 것을 특징으로 하는 반도체 장치.
- 제 1 및 제 2주표면을 갖는 제 1도전형의 반도체층과,이 반도체층의 제 1주표면에 형성된 제 2도전형의 베이스 영역과,이 베이스 영역 안에 형성된 제 1도전형의 에미터 영역과,이 반도체층의 제 2주표면에 적층된 제 1도전형의 버퍼층과,이 버퍼층 안에 형성된 제 2도전형의 콜렉터 영역을 포함하고, 이 에미터 영역과 이 콜렉터 영역 사이에 흐르는 전류를 이 베이스 영역에서 제어하는 반도체 장치에 있어서,이 버퍼층 안에, 이 콜렉터 영역을 둘러싸도록 제 2도전형의 가드 링 영역이 배치된 것을 특징으로 하는 반도체 장치.
- 제 1 및 제 2주표면을 갖는 제 1도전형의 반도체층과,이 반도체층의 제 1주표면에 형성된 제 2도전형의 베이스 영역과,이 베이스 영역 안에 형성된 제 1도전형의 에미터 영역과,이 반도체층의 제 2주표면에, 이 반도체층 측에서 순차적으로 적층된 제 1도전형의 버퍼층 및 제 2도전형의 콜렉터층을 포함하고, 이 에미터 영역과 이 콜렉터 영역 사이에 흐르는 전류를 이 베이스 영역에서 제어하는 반도체 장치에 있어서,이 반도체층 안에, 이 전류의 경로를 가로 지르도록 단(短) 캐리어 라이프타임층이 배치된 것을 특징으로 하는 반도체 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2004-00143360 | 2004-05-13 | ||
JP2004143360 | 2004-05-13 | ||
JP2005043908A JP2005354031A (ja) | 2004-05-13 | 2005-02-21 | 半導体装置 |
JPJP-P-2005-00043908 | 2005-02-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070012296A Division KR100726901B1 (ko) | 2004-05-13 | 2007-02-06 | 반도체 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060045894A true KR20060045894A (ko) | 2006-05-17 |
KR100726899B1 KR100726899B1 (ko) | 2007-06-14 |
Family
ID=35308580
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050037081A KR100726899B1 (ko) | 2004-05-13 | 2005-05-03 | 반도체 장치 |
KR1020070012296A KR100726901B1 (ko) | 2004-05-13 | 2007-02-06 | 반도체 장치 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070012296A KR100726901B1 (ko) | 2004-05-13 | 2007-02-06 | 반도체 장치 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7635878B2 (ko) |
JP (1) | JP2005354031A (ko) |
KR (2) | KR100726899B1 (ko) |
CH (3) | CH698373B1 (ko) |
DE (1) | DE102005021249B4 (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5033335B2 (ja) * | 2006-02-21 | 2012-09-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびそれを用いたインバータ装置 |
JP4942367B2 (ja) * | 2006-03-02 | 2012-05-30 | 新電元工業株式会社 | 半導体装置 |
JP5157201B2 (ja) * | 2006-03-22 | 2013-03-06 | 株式会社デンソー | 半導体装置 |
JP2007288094A (ja) * | 2006-04-20 | 2007-11-01 | Fuji Electric Device Technology Co Ltd | Igbtとそれを駆動するゲート駆動回路 |
JP5036327B2 (ja) * | 2007-01-23 | 2012-09-26 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
EP2045844A1 (en) * | 2007-10-03 | 2009-04-08 | ABB Technology AG | Semiconductor Module |
JP5332175B2 (ja) * | 2007-10-24 | 2013-11-06 | 富士電機株式会社 | 制御回路を備える半導体装置 |
JP4265684B1 (ja) * | 2007-11-07 | 2009-05-20 | トヨタ自動車株式会社 | 半導体装置 |
JP5150953B2 (ja) | 2008-01-23 | 2013-02-27 | 三菱電機株式会社 | 半導体装置 |
US9153674B2 (en) * | 2009-04-09 | 2015-10-06 | Infineon Technologies Austria Ag | Insulated gate bipolar transistor |
EP2339613B1 (en) * | 2009-12-22 | 2015-08-19 | ABB Technology AG | Power semiconductor device and method for producing same |
JP5621621B2 (ja) * | 2011-01-24 | 2014-11-12 | 三菱電機株式会社 | 半導体装置と半導体装置の製造方法 |
US8482029B2 (en) * | 2011-05-27 | 2013-07-09 | Infineon Technologies Austria Ag | Semiconductor device and integrated circuit including the semiconductor device |
JP2013229547A (ja) * | 2012-03-26 | 2013-11-07 | Toshiba Corp | 半導体装置および半導体モジュール |
WO2014030457A1 (ja) * | 2012-08-22 | 2014-02-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US20140273374A1 (en) * | 2013-03-15 | 2014-09-18 | Joseph Yedinak | Vertical Doping and Capacitive Balancing for Power Semiconductor Devices |
KR101917485B1 (ko) * | 2014-01-29 | 2018-11-09 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 장치 |
JP6537711B2 (ja) * | 2016-04-25 | 2019-07-03 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528058A (en) * | 1986-03-21 | 1996-06-18 | Advanced Power Technology, Inc. | IGBT device with platinum lifetime control and reduced gaw |
JPH0680820B2 (ja) | 1989-10-16 | 1994-10-12 | 株式会社東芝 | 過電圧保護機能付半導体装置及びその製造方法 |
JP2663679B2 (ja) * | 1990-04-20 | 1997-10-15 | 富士電機株式会社 | 伝導度変調型mosfet |
JP3321185B2 (ja) * | 1990-09-28 | 2002-09-03 | 株式会社東芝 | 高耐圧半導体装置 |
JP3091771B2 (ja) | 1991-01-24 | 2000-09-25 | 日本碍子株式会社 | エミッタ短絡構造を有する半導体素子 |
JP3325752B2 (ja) * | 1995-12-11 | 2002-09-17 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5466951A (en) * | 1993-12-08 | 1995-11-14 | Siemens Aktiengesellschaft | Controllable power semiconductor element with buffer zone and method for the manufacture thereof |
DE69432407D1 (de) * | 1994-05-19 | 2003-05-08 | Cons Ric Microelettronica | Integrierte Leistungsschaltung ("PIC") mit vertikalem IGB und Verfahren zur Herstellung derselben |
JPH09121052A (ja) | 1995-08-21 | 1997-05-06 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
JP3538505B2 (ja) | 1996-05-22 | 2004-06-14 | 富士電機デバイステクノロジー株式会社 | 温度検知部内蔵型バイポーラ半導体素子およびその製造方法 |
JP3413021B2 (ja) * | 1996-07-30 | 2003-06-03 | 株式会社東芝 | 半導体装置 |
US6774407B2 (en) * | 1996-11-13 | 2004-08-10 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response |
US6194290B1 (en) * | 1998-03-09 | 2001-02-27 | Intersil Corporation | Methods for making semiconductor devices by low temperature direct bonding |
JP4198251B2 (ja) * | 1999-01-07 | 2008-12-17 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
JP4031209B2 (ja) * | 2000-03-14 | 2008-01-09 | 株式会社東芝 | 半導体装置 |
JP4750933B2 (ja) * | 2000-09-28 | 2011-08-17 | 株式会社東芝 | 薄型パンチスルー型パワーデバイス |
JP2002141357A (ja) * | 2000-10-31 | 2002-05-17 | Mitsubishi Electric Corp | 半導体装置 |
JP4357753B2 (ja) * | 2001-01-26 | 2009-11-04 | 株式会社東芝 | 高耐圧半導体装置 |
JP4023773B2 (ja) | 2001-03-30 | 2007-12-19 | 株式会社東芝 | 高耐圧半導体装置 |
JP2002305304A (ja) * | 2001-04-05 | 2002-10-18 | Toshiba Corp | 電力用半導体装置 |
JP4840551B2 (ja) * | 2001-06-07 | 2011-12-21 | 株式会社デンソー | Mosトランジスタ |
JP4566470B2 (ja) | 2001-07-17 | 2010-10-20 | 三菱電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JP2003069019A (ja) * | 2001-08-29 | 2003-03-07 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2004311481A (ja) * | 2003-04-02 | 2004-11-04 | Toshiba Corp | 半導体装置 |
JP4791704B2 (ja) * | 2004-04-28 | 2011-10-12 | 三菱電機株式会社 | 逆導通型半導体素子とその製造方法 |
-
2005
- 2005-02-21 JP JP2005043908A patent/JP2005354031A/ja active Pending
- 2005-04-19 US US11/108,694 patent/US7635878B2/en active Active
- 2005-05-03 KR KR1020050037081A patent/KR100726899B1/ko active IP Right Grant
- 2005-05-09 DE DE102005021249A patent/DE102005021249B4/de active Active
- 2005-05-13 CH CH01462/08A patent/CH698373B1/de not_active IP Right Cessation
- 2005-05-13 CH CH00854/05A patent/CH698382B1/de not_active IP Right Cessation
- 2005-05-13 CH CH01461/08A patent/CH698372B1/de not_active IP Right Cessation
-
2007
- 2007-02-06 KR KR1020070012296A patent/KR100726901B1/ko active IP Right Grant
-
2009
- 2009-07-28 US US12/510,604 patent/US7808014B2/en active Active
- 2009-07-28 US US12/510,584 patent/US7629626B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20070027670A (ko) | 2007-03-09 |
US7629626B1 (en) | 2009-12-08 |
US7635878B2 (en) | 2009-12-22 |
DE102005021249A1 (de) | 2005-12-15 |
CH698382B1 (de) | 2009-07-31 |
KR100726899B1 (ko) | 2007-06-14 |
DE102005021249B4 (de) | 2012-04-19 |
US7808014B2 (en) | 2010-10-05 |
US20090283862A1 (en) | 2009-11-19 |
CH698372B1 (de) | 2009-07-31 |
US20050253169A1 (en) | 2005-11-17 |
JP2005354031A (ja) | 2005-12-22 |
US20090283863A1 (en) | 2009-11-19 |
CH698373B1 (de) | 2009-07-31 |
KR100726901B1 (ko) | 2007-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100726899B1 (ko) | 반도체 장치 | |
JP4843253B2 (ja) | 電力用半導体装置 | |
US9601485B2 (en) | Reverse-conducting IGBT with buffer layer and separation layer for reducing snapback | |
CN102593168B (zh) | 半导体器件和逆导igbt | |
KR101534106B1 (ko) | 반도체장치 | |
JP3968912B2 (ja) | ダイオード | |
JP5182766B2 (ja) | 高耐圧半導体装置 | |
KR20160119691A (ko) | 반도체 장치 | |
US20150129930A1 (en) | Insulating gate-type bipolar transistor | |
JPH1074959A (ja) | 電力用半導体素子 | |
US20220157809A1 (en) | Semiconductor device | |
EP1713128A1 (en) | IGBT and electric power conversion device using it | |
US20230106654A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
US9412854B2 (en) | IGBT module and a circuit | |
JP5017850B2 (ja) | 電力用半導体装置およびそれを用いた電力変換装置 | |
US20060145298A1 (en) | Semiconductor device | |
CN111969054A (zh) | 一种逆导型SiC GTO半导体器件及其制备方法 | |
CN112736134A (zh) | 碳化硅pnpn晶闸管注入型igbt器件 | |
WO2022224840A1 (ja) | 半導体装置及びそれを用いた電力変換装置、半導体装置の製造方法 | |
CN110797404B (zh) | 一种rc-igbt半导体器件 | |
CN112038413A (zh) | 一种超结型快恢复二极管器件 | |
CN116646393A (zh) | 一种光增强消除折回现象的逆导型igbt器件 | |
JP2001274169A (ja) | 半導体素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
A107 | Divisional application of patent | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
G170 | Re-publication after modification of scope of protection [patent] | ||
FPAY | Annual fee payment |
Payment date: 20130524 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140530 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150430 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160517 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170522 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180517 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190515 Year of fee payment: 13 |