KR20040099407A - 전해연마 및/또는 전기도금 장치 및 방법 - Google Patents
전해연마 및/또는 전기도금 장치 및 방법 Download PDFInfo
- Publication number
- KR20040099407A KR20040099407A KR10-2004-7015977A KR20047015977A KR20040099407A KR 20040099407 A KR20040099407 A KR 20040099407A KR 20047015977 A KR20047015977 A KR 20047015977A KR 20040099407 A KR20040099407 A KR 20040099407A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- electroplating
- electropolishing
- semiconductor
- chuck
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 427
- 238000009713 electroplating Methods 0.000 title claims abstract description 134
- 230000008569 process Effects 0.000 claims abstract description 176
- 239000004065 semiconductor Substances 0.000 claims abstract description 173
- 238000004140 cleaning Methods 0.000 claims abstract description 132
- 229910052751 metal Inorganic materials 0.000 claims abstract description 102
- 239000002184 metal Substances 0.000 claims abstract description 102
- 239000007788 liquid Substances 0.000 claims abstract description 93
- 235000012431 wafers Nutrition 0.000 claims description 549
- 239000012636 effector Substances 0.000 claims description 96
- 238000012545 processing Methods 0.000 claims description 91
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 73
- 239000000126 substance Substances 0.000 claims description 43
- 239000007789 gas Substances 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
- 239000003792 electrolyte Substances 0.000 claims description 27
- 239000012530 fluid Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 230000001133 acceleration Effects 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 230000005484 gravity Effects 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 238000013019 agitation Methods 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 1
- 239000013536 elastomeric material Substances 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 230000004936 stimulating effect Effects 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 24
- 238000007747 plating Methods 0.000 description 24
- 229910052802 copper Inorganic materials 0.000 description 22
- 239000010949 copper Substances 0.000 description 22
- 238000005498 polishing Methods 0.000 description 14
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 11
- 238000012546 transfer Methods 0.000 description 10
- 238000007517 polishing process Methods 0.000 description 9
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 238000000429 assembly Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 241001272720 Medialuna californiensis Species 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910000619 316 stainless steel Inorganic materials 0.000 description 2
- -1 PVDE Substances 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229920002449 FKM Polymers 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Robotics (AREA)
- Electroplating Methods And Accessories (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (17)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37095602P | 2002-04-08 | 2002-04-08 | |
| US37091902P | 2002-04-08 | 2002-04-08 | |
| US37095502P | 2002-04-08 | 2002-04-08 | |
| US37092902P | 2002-04-08 | 2002-04-08 | |
| US60/370,955 | 2002-04-08 | ||
| US60/370,929 | 2002-04-08 | ||
| US60/370,919 | 2002-04-08 | ||
| US60/370,956 | 2002-04-08 | ||
| US37254202P | 2002-04-14 | 2002-04-14 | |
| US37256602P | 2002-04-14 | 2002-04-14 | |
| US37256702P | 2002-04-14 | 2002-04-14 | |
| US60/372,566 | 2002-04-14 | ||
| US60/372,567 | 2002-04-14 | ||
| US60/372,542 | 2002-04-14 | ||
| US39046002P | 2002-06-21 | 2002-06-21 | |
| US60/390,460 | 2002-06-21 | ||
| PCT/US2003/010725 WO2003087436A1 (en) | 2002-04-08 | 2003-04-08 | Electropolishing and/or electroplating apparatus and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040099407A true KR20040099407A (ko) | 2004-11-26 |
Family
ID=29255769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7015977A KR20040099407A (ko) | 2002-04-08 | 2003-04-08 | 전해연마 및/또는 전기도금 장치 및 방법 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20050218003A1 (ja) |
| EP (1) | EP1492907A4 (ja) |
| JP (5) | JP2005522585A (ja) |
| KR (1) | KR20040099407A (ja) |
| CN (2) | CN100430526C (ja) |
| AU (1) | AU2003226319A1 (ja) |
| CA (1) | CA2479794A1 (ja) |
| SG (1) | SG159384A1 (ja) |
| TW (1) | TWI274393B (ja) |
| WO (1) | WO2003087436A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200045510A (ko) * | 2017-08-30 | 2020-05-04 | 에이씨엠 리서치 (상하이) 인코포레이티드 | 도금 장치 |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7997288B2 (en) | 2002-09-30 | 2011-08-16 | Lam Research Corporation | Single phase proximity head having a controlled meniscus for treating a substrate |
| US7675000B2 (en) | 2003-06-24 | 2010-03-09 | Lam Research Corporation | System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology |
| US8062471B2 (en) | 2004-03-31 | 2011-11-22 | Lam Research Corporation | Proximity head heating method and apparatus |
| CN100419121C (zh) * | 2004-05-12 | 2008-09-17 | 鸿富锦精密工业（深圳）有限公司 | 湿蚀刻设备 |
| JP5155517B2 (ja) * | 2005-04-21 | 2013-03-06 | 株式会社荏原製作所 | ウエハ受渡装置及びポリッシング装置 |
| US7928366B2 (en) | 2006-10-06 | 2011-04-19 | Lam Research Corporation | Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access |
| TW200818374A (en) * | 2006-08-04 | 2008-04-16 | Du Pont | Substrate carrier enclosure |
| US8474468B2 (en) * | 2006-09-30 | 2013-07-02 | Tokyo Electron Limited | Apparatus and method for thermally processing a substrate with a heated liquid |
| US20080107509A1 (en) * | 2006-11-07 | 2008-05-08 | Whitcomb Preston X | Vacuum end effector for handling highly shaped substrates |
| KR101601005B1 (ko) * | 2006-11-27 | 2016-03-08 | 테크-셈 아크티엔게젤샤프트 | 오버헤드 이송 시스템용 운송 장치 |
| US8146902B2 (en) | 2006-12-21 | 2012-04-03 | Lam Research Corporation | Hybrid composite wafer carrier for wet clean equipment |
| US7479463B2 (en) * | 2007-03-09 | 2009-01-20 | Tokyo Electron Limited | Method for heating a chemically amplified resist layer carried on a rotating substrate |
| US8464736B1 (en) | 2007-03-30 | 2013-06-18 | Lam Research Corporation | Reclaim chemistry |
| US9383138B2 (en) * | 2007-03-30 | 2016-07-05 | Tokyo Electron Limited | Methods and heat treatment apparatus for uniformly heating a substrate during a bake process |
| US20080241400A1 (en) * | 2007-03-31 | 2008-10-02 | Tokyo Electron Limited | Vacuum assist method and system for reducing intermixing of lithography layers |
| US8141566B2 (en) | 2007-06-19 | 2012-03-27 | Lam Research Corporation | System, method and apparatus for maintaining separation of liquids in a controlled meniscus |
| US8172989B2 (en) * | 2007-11-26 | 2012-05-08 | Sunpower Corporation | Prevention of substrate edge plating in a fountain plating process |
| JP5336513B2 (ja) | 2007-12-27 | 2013-11-06 | ラム リサーチ コーポレーション | 動的アラインメント・ビーム校正のためのシステムおよび方法 |
| SG186665A1 (en) | 2007-12-27 | 2013-01-30 | Lam Res Corp | Systems and methods for calibrating end effector alignment using at least a light source |
| CN101911654A (zh) * | 2007-12-27 | 2010-12-08 | 日本电气株式会社 | 移动电话终端 |
| JP5309157B2 (ja) | 2007-12-27 | 2013-10-09 | ラム リサーチ コーポレーション | プラズマ処理システムにおいてエンドエフェクタのアラインメントを校正するためのシステムおよび方法 |
| CN101911277B (zh) | 2007-12-27 | 2012-04-04 | 朗姆研究公司 | 确定位置和偏移的装置和方法 |
| US7901475B2 (en) * | 2008-01-18 | 2011-03-08 | Gm Global Technology Operations, Inc. | Diesel particulate filter with zoned resistive heater |
| CN101580945B (zh) * | 2008-05-12 | 2012-12-05 | 盛美半导体设备（上海）有限公司 | 电沉积系统 |
| JP5675617B2 (ja) * | 2008-09-04 | 2015-02-25 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 加工時における基板の分光モニタリングを使用した研磨速度の調整 |
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- 2003-04-08 EP EP03746651A patent/EP1492907A4/en not_active Withdrawn
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- 2003-04-08 US US10/510,522 patent/US20050218003A1/en not_active Abandoned
- 2003-04-08 AU AU2003226319A patent/AU2003226319A1/en not_active Abandoned
- 2003-04-08 CN CNB038102064A patent/CN100430526C/zh not_active Expired - Fee Related
- 2003-04-08 SG SG200606992-6A patent/SG159384A1/en unknown
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- 2003-04-08 CA CA002479794A patent/CA2479794A1/en not_active Abandoned
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200045510A (ko) * | 2017-08-30 | 2020-05-04 | 에이씨엠 리서치 (상하이) 인코포레이티드 | 도금 장치 |
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|---|---|
| US20050218003A1 (en) | 2005-10-06 |
| JP2007051377A (ja) | 2007-03-01 |
| CN1653211A (zh) | 2005-08-10 |
| CN101353810B (zh) | 2012-02-15 |
| WO2003087436A1 (en) | 2003-10-23 |
| CN101353810A (zh) | 2009-01-28 |
| AU2003226319A1 (en) | 2003-10-27 |
| TW200402821A (en) | 2004-02-16 |
| EP1492907A4 (en) | 2008-01-09 |
| JP2006319348A (ja) | 2006-11-24 |
| JP2005522585A (ja) | 2005-07-28 |
| EP1492907A1 (en) | 2005-01-05 |
| TWI274393B (en) | 2007-02-21 |
| CA2479794A1 (en) | 2003-10-23 |
| CN100430526C (zh) | 2008-11-05 |
| JP2007077501A (ja) | 2007-03-29 |
| JP2006328543A (ja) | 2006-12-07 |
| SG159384A1 (en) | 2010-03-30 |
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