TW200402821A - Electropolishing and/or electroplating apparatus and methods - Google Patents

Abstract

In one aspect of the present invention, exemplary apparatus and methods are provided for electropolishing and/or electroplating processes for semiconductor wafers. One exemplary apparatus includes a cleaning module having an edge clean assembly to remove metal residue on the bevel or edge portion of a wafer. The edge cleaning apparatus includes a nozzle head configured to supply a liquid and a gas to a major surface of the wafer. The nozzle supplies the liquid in a region adjacent an outer edge of the major surface of the wafer, and supplies the gas radially inward of the location the liquid is supplied to reduce the potential of the liquid from flowing radially inward to the metal film formed on the wafer.

Description

200402821 (1) 发明 Description of the invention

This application asserts the priority of the provisional application previously filed. United States Application No. 60/372, 542, titled "MAINFRAMES FOR

ELECTROPOLISHING AND / OR ELECTROPLATING AND / OR ELECTROPLATING ASSEMBLY ", application date April 14, 2002; document number 60 / 379,919, title " END EFFECTOR SEAL", application date April 8, 2002; document number 60/370, 95 5 , Title "METHOD AND APPARATUS FOR WAFER CLEANING", application date April 8, 2002; document number 60 / 372,566, title "METHOD AND APPARATUS FOR ELECTROPOLISHING AND / OR ELECTROPLATING", statement dated April 14, 2002; document name 60/370, 95 6, title "METHOD AND APPARATUS FOR DELIVERING LIQUID", application date April 8, 2002;

Symbol 60/370, 929, title "METHOD AND APPARATUS FOR LEVELING WAFER", application date April 8, 2002; symbol

60/372, 5 67, title "METHOD AND APPARATUS FOR ELECTROPOLISHING METAL FILM ON SUBSTRATE", application date April 14, 2002; and document number 60 / 390,460, title "ELECTROPLATING APPARATUS", statement date June 21, 2 002, the above is combined by their reference here. [Technical Field to which the Invention belongs] 1. Field: (2) 200402821 The present invention relates broadly to semiconductor processing, and more particularly to an electropolishing and / or electroplating device and method for electropolishing and / or electroplating a conductor layer on a semiconductor device. [Prior Art] A series of different processing steps are used to generate transistors and interconnected components. Semiconductor devices are manufactured or assembled on semiconductor wafers. In order to electrically connect the terminals of a transistor combined with a semiconductor wafer, conductors (e.g., metal) trenches, metallized holes, and the like form a part of a semiconductor device with a dielectric substance. The trench and the metallization hole connect electric signals and power between the transistor, the internal circuit of the semiconductor device and the external circuit of the semiconductor device. In forming interconnected components, semiconductor wafers may undergo masking, etching, and storage processes to form the desired electronic circuits in a semiconductor device. In particular, multiple photomasks and etching steps may be performed to form a pattern of recessed areas in the dielectric layer on the semiconductor wafer, the pattern of the recessed areas serving as internally connected trenches and metallization holes. A storage process can then be performed to store a metal layer in the semiconductor wafer, so storing the metal layer in the trenches and metallized holes, and also in the non-recessed areas of the semiconductor wafer. To isolate interconnecting points, such as patterned trenches and metallized holes, the metal stored in the non-recessed areas of the semiconductor wafer is removed. Conventional methods for removing a metal film stored in a non-recessed area in a dielectric layer on a semiconductor wafer include, for example, chemical mechanical polishing (CMP). The CMP method is widely known, and is widely used in the semiconductor industry to polish and planarize trenches and metallized holes with non-concave regions of the dielectric layer in the range of -9- (3) (3) 200402821. Metal layers to form interconnecting lines. However, the CMP method can cause harmful effects under the semiconductor structure due to the relatively strong mechanical force involved. For example, when interconnected planar patterns move by 0.1 3 microns and below, there is a large gap between the mechanical properties of conductive materials such as copper and low-k films used in typical engraving processes. For example, the initial coefficient of a low-k dielectric film will be less than one tenth of the amount of copper. As a result, in one of the CMP processes, mechanical forces acting on the dielectric film and copper can cause stresses involving defects in the semiconductor structure, including delamination, dents, erosion, film bulges, scratches, and the like. New processing devices and technologies are therefore required to store and polish metal layers. For example, a metal layer can be removed or stored from a wafer using an electropolishing or plating process. Generally, in an electropolishing or electroplating process, a polished or plated portion of a wafer intrudes into an electrolytic solution, and a charge is then applied to the wafer. These conditions cause copper to be stored or removed from the wafer in accordance with the associated charge on the wafer. SUMMARY OF THE INVENTION One of the directions of the present invention is an exemplary device and method for electropolishing and / or electroplating a conductor film on a wafer. The demonstration device includes different processing modules such as knotting modules, processing modules, calibration modules, as well as different devices for performing different module processing, such as robotics, end effectors, liquid delivery systems, and the like. Another aspect of the invention includes different devices and processing methods. An exemplary device includes a cleaning module with an edge cleaning module, the purpose of which is to remove -10 (4) (4) 200402821 metal residues on a bevel or edge portion of a wafer's main surface. The edge cleaning assembly includes a nozzle head having a function of supplying a liquid and a gas to a main surface of a wafer. The nozzle head supplies liquid to the vicinity of the outer edge of the main surface of the wafer, and supplies gas radially to the inside of the position where the liquid is supplied. Concentrating the gas radially to a position on the surface of the wafer within the position where the liquid is supplied can immediately reduce the possibility of the liquid flowing radially on the wafer into the metal layer that is then formed. The invention will be better understood in consideration of the accompanying drawings and detailed descriptions associated with the scope of the patent application. [Embodiment] In order to provide a further understanding of the present invention, the following description sets many specific details, such as specific materials, parameters, and the like. It must be recognized, however, that this detailed description does not imply a limitation on the field of the invention, but rather provides a better description of the exemplary ontology. I. Demonstration Planer and / or Plating Assembly The first aspect of the invention includes a demonstration planer and / or plating assembly for semiconductor wafer processing. In one example, a device for performing one or more semiconductor wafers Contains a storage wafer module, two or more vertical stacking processing modules for planed wafers or plated wafers, a cleaning module, and a robot (with similar end effectors) for wafer transfer Device). The device can be divided into two or more areas, which are described by separate pictures. Generally speaking, the robot transfers wafers between the storage wafer module -11-(5) (5) 200402821, the processing module and the cleaning module to perform the desired processing on the wafer. In addition, other different modules and features can be included in the semiconductor wafer processing to be described. Figure 1 depicts an exploded view of an exemplary electropolished and / or plated assembly 100. In this example, the component 100 includes a main structure (backend. "BE") 108 and a front structure (factory interface, "FI") 132; however, the component 100 may be divided into fewer or more areas. BE108 may include an electric chassis assembly 102, Jiejie exhaust / treatment exhaust pipe 104, Jiejie module assembly 106, AC control module 1 10, liquid delivery system (LDS) 112, gas control system (GCS) 114, and treatment drainage Tubes 1 1 6, bowls and wave eliminators 1 1 8, cabin exhaust pipes 1 20, processing tank 122, liquid filter 124, liquid-sealed tray 126, and double-sealed area 128, processing module assembly 130. FI132 may include a wafer previous corrector 134, front panel 136, light source tower 138, robot structural assembly 140, robot controller 142, emergency machine stop (EMO) button 144, front open integrated vertical slot 146, and fan filter器 Units 1 5 2. The module 100 can be disassembled into two parts, in other words, FI132 and BE 108, which can be transported separately and assembled into a unit at a designated place. Furthermore, the robotic structural component 140 including the robotic component 1 47, the dry end effector 1 48, the wet end effector 1 48, and the robot controller 142 may, for example, be transported or serviced from FI 1 32 Disassemble and roll out. Module 100 can therefore be modularized or divided into many parts to facilitate transportation, cleaning, maintenance, etc. • 12- (6) (6) 200402821 As shown in Figure 1, the front open integrated vertical slot 1 4 6 can contain one or more vertical slots to store wafers. The dry end effector 1 48 transfers the wafer 150 from any of the longitudinal grooves to the wafer previous corrector 1 34. The wafer pre-calibrator 134 calibrates the wafer 150 before the wet end effector 149 receives the wafer, and then transfers the wafer to the processing module assembly 130. It can be confirmed that the wafer is transferred between modules by other methods or devices. The processing module assembly 130 may include one or more electro-polishing assemblies for polishing wafers, or racks for plating assemblies 131 for plating wafers. The electro-polishing assembly or plating assembly 1 3 1 may be stacked vertically to reduce the footprint of the process module assembly 1 30. The cleaning module assembly 106 may include a shelf of the cleaning room module 107 for cleaning wafers. Similarly, clean room modules 107 can be stacked vertically. After the wafer 150 has been electropolished or plated, the wet end effector 1 4 9 transfers the wafer 150 to the clean room module 107. The dry end effector 148 receives the wafer 150 from the clean room module 107 and then transfers the wafer back to the vertical slot in the front open integrated vertical slot 146. Generally speaking, when the vertical slot in the previously open integrated vertical slot 146 is received and returned to the wafer 150, or when it is received from the clean room module 107 to the wafer 150, the "dry" end The actuator 148 is utilized. The "wet" end effector 149 is typically used to receive the wafer 150 back after processing, as the wafer 150 may have residues from processing. The use of wet end effector 149 to limit the withdrawal of processed wafers will reduce the staggered infection between dry end effector 1 48, wet end effector 1 49, and the wafers that they move and transport with component 100. Possibility. A demonstration electro-polishing assembly that can be used in combination with assembly 100 is described in -13- (7) (7) 200402821 patent application number PCT / US02 / 3 65 67 and titled ELECTROPOLISHING ASSEMBLY AND METHODS FOR ELECTROPOLISHING CONDUCTIVE LAYERS, the statement date is January 13, 2000, all of which are combined from the references. As shown in Figure 1, most of the electronic equipment is placed on the BE 108, especially the electric chassis assembly 102 and the AC control assembly 110. LDS112 and GCS114 are also located at BE108. LDS1 12 can be packaged with a conveyor line containing DI water, as well as different chemistries and / or electrolytes, whose composition can be changed depending on the particular application and the processing module included in the module 1000. GCS 114 can also contain different control valves, sensors, and conveyor lines to control and monitor the movement of different chemicals and liquids. The drum and wave eliminator 1 1 8 draws the processing liquid from the processing tank 1 22 to the processing module 130. Before the processing liquid flows to the processing module assembly 130, the liquid filter element 1 24 may be included in a conveying line to filter the processing liquid. After the wafer 150 is processed, the processing liquid can be sucked into the processing tank 12 through the processing drain pipe 116. Any gas from the processing module assembly 130 and the cleaning processing module 106, such as potentially toxic gases, can be discharged from the processing exhaust pipe 104. The Jiejie drain / treatment exhaust pipe 104 may also be used to release DI water or gas from the Jiejie module assembly 104. The cabin exhaust pipe 120 may be used to release gas that is normally caused within the BE 108. The FI132 can include a fan filter element that provides clean air filtered in FI 1 32. The BE 108 also contains a liquid-sealed tray 126 and a double-sealed area 128. (8) 200402821 The liquid-tight tray 126 is useful when the processing tank 122 overflows or below the supply line. The liquid-tight tray 126 also includes a detection leak detector. The double seal zone 1 28 can accommodate the application line from the supply line which has been blocked by external pipes. Generally speaking, the supply line, drum and wave eliminator 1 core 124, liquid-sealed tray 126, and double-sealed area 128 are acid and aggressive substances. BE 1 08, FI 132, and robotic structural components 140 can be made. Stainless steel grades 3 1 to 6 are particularly preferred. Robot components are made of 1 4 7 stainless steel. If the robot assembly 147 includes aluminum or an etched substance, the surface of the aluminum portion may be plated or coated with iron oxide to prevent corrosion.淸 Jie module assembly 06 can be made of stainless steel, PVDF, polyurethane, Teflon, etc., stainless steel is particularly preferred. However, other substances or coatings are expected to be used or FI132 can be identified. Demonstration process for electropolishing or electroplating a semiconductor wafer. A round longitudinal slot is placed in the front open integrated longitudinal slot 1 46. The longitudinal slot door is opened to allow the robotic assembly 1 47 to enter therein and the actuator 148 to pick up a wafer. . The robot assembly 147 and the stem 148 transfer the wafer 150 to the wafer pre-calibrator 134 for calibration. After the previous calibrator 134 calibrates the wafer 150, the robot uses the wet end effector 149 to transfer the wafer 150 from the previous calibrator and then transfer the wafer 150 to the electro-polishing component or electroplating component. The liquid filter can contain plastics made of stainless steel, aluminum, other materials that easily rot, etc., PVC, grade 3 1 6 BE 1 0 8 and / or a crystal. The vertical groove may be picked up by the end effector end effector positive wafer 150 module 147 and 134, and then processed (9) (9) 200402821 After the electropolishing or plating process, the robot assembly 1 47 uses the wet end effector. 149 The wafer 150 is picked up from the previous corrector 134, and then the wafer 150 is transferred to the clean room module 107. After the cleaning process is completed, the dry end effector 148 picks up the wafer 150 and returns the wafer 150 to the vertical groove in the FOUP 146. Another exemplary process includes multi-wafer and multi-process electro-polishing or electroplating components. The above-mentioned exemplary process can be applied to the first wafer, similarly to the second and third wafers. The different elements of the module 100 will be described in detail below. Although the conventional electropolishing and / or electroplating device has been described with respect to a certain embodiment, examples and applications, it is obvious that for the present technology, different improvements and modifications are possible without departing from the present invention. II. End effector aspect In the context of semiconductor components, an exemplary end effector device and method are described. End effectors are usually used in wafer manufacturing processes to transfer wafers, for example, for further processing, such as cleaning, storage, etc., from one processing module to another. An exemplary end effector according to an implementation force includes a vacuum cup seal for securely grasping and transferring a semiconductor. An exemplary end effector may be contained in a semiconductor processing module, specifically, a robotic module in a semiconductor module. This demonstration end effector can more accurately grasp the surface of a semiconductor wafer, resulting in more accurate and reliable wafer transfer to the destination. Figure 2 depicts an example machine that transfers semiconductor wafers in a processing module. -16- (10) 200402821 Robotic module. The robotic assembly includes a demonstration terminal 206 with a robotic assembly, the purpose of which is to pick up and transfer the wafer 216. End effector A vacuum is created under the end effector 206 to stabilize the wafer from one module to another. The end effector 206 may place or release the wafer 2 1 6 by emptying it, or increase the pressure so that the center of gravity guides the airtight, and then the wafer 2 1 6 is released from the end effector 206. The end effector 206 can hold the wafer to prevent vibration during conveyance by pressing the lower side of the wafer 2 1 6 relative to the external environment; FIG. 3 describes one side of the exemplary end effector 306 in more detail. As shown in Figure 3, the end effector 306 is combined with a source controlled by a vacuum valve 322 and a source of pressurized nitrogen controlled by a nitrogen valve 320. When 322 is turned on, the vacuum source is connected to the end effector 306, and the pressure in the vacuum cup 302 is lowered to cause the end effector 306 to grasp the crystal. When the vacuum valve 3 22 is closed, the nitrogen valve 320 will open, and the end 3 06 will release 216 ° from the vacuum cup when the pressure in the vacuum cup 3 02 increases. It must be understood that absolute vacuum or almost vacuum is not necessary. The pressure relative to the processing environment is low enough to grasp the wafer to ensure that it can resist gravity, vibration, acceleration, etc. Furthermore, nitrogen gas, such as air, can be used to introduce the gas and increase the pressure during re-release. When the wafer is not grasped or transferred, the nitrogen valve can keep the encapsulation particles and / or prevent the acid from entering the vacuum cup 302, or prevent the end caused by the vacuum cup 302 approaching or greater pressure than the surrounding environment. The actuators 206 216 can release the true force to overcome the force, and the force can catch the speed. . As shown in the figure, the vacuum valve will round down. 2 1 6 The actuator will place the wafer; the wafer will be placed outside the 216 parallel chamber. Figures 4A and 4B depict an exemplary end effector and a cross-sectional view, including a vacuum cup 402, a mushroom channel 405, a deletion 408 (reduced end effector channel 4 1 2 and a screw 4 1 6 (for (Connected to a robot). The end effector 406 may have been used in manufacturing including materials such as stainless steel, aluminum, different alloys or metals. As shown in Figures 3 and 4A, a vacuum source passes through the end effector. The device 414 on the main surface and the end of the 406 vacuum channel 412 may be integrally formed, or received at the end as shown in the figure), or through a separate channel located on the opposite side of the end effector 406. By the depressurization or vacuum generated by the vacuum channel 412, the wafer of the end effector 406 is sealed against the vacuum cup 402 when it is pulled between the reverse side of the wafer and the vacuum cup of the end effector 406. The vacuum cup 402 may be any suitable shape, such as an elongated circle, a square, or the like. The vacuum cup 402 covers the edge of the 4 0 4 and unfolds the cup 4 02 of the end effector 4 0 6 may include an elastomer, silicone, or other material that is generally elastic or can be produced with a wafer and will not Damage caused by scratches or cracks on the wafer. As shown in Figures 4A to 4B, in order to increase the vacuum shallow channel 405 is formed through the mushroom-shaped cover 404, such as a plan view of the 406 mushroom-shaped cover 404, weight), vacuum, or any suitable material such as ceramics, plastic, etc. Empty lanes 4 1 2 and bits to eliminate air. Within the actuator 406 (such as an actuator located adjacent or pushed, to cause a temporary between 402, such as elliptical installation on a mushroom-shaped surface. The vacuum is suitable for the material, this temporarily sealed, the holding force, a crystal Circle 4 1 6 (12) (12) 200402821 Blocking device 414. The channel 405 divides the top of the mushroom-shaped cover 404 into two semicircles. This shallow channel 405 can also be staggered, square, round, or other suitable Shape to improve suction and vacuum of the end effector 406, and reduce the possibility of the device 4 1 4 being blocked. The mushroom cover 404 can be made of a material similar to the end effector, such as metal or plastic. In the example, the mushroom-shaped cover 404 has a similar height to the end of the end effector 406 (see Figure 4B). 'So when the vacuum cup 402 is pulled up, the wafer is held against the two ends and the mushroom-shaped cover 404. Pull up. Figure 8 depicts a cross-section view of a vacuum cup that can be included in an exemplary end effector. As shown in Figure 8, a vacuum cup is usually a hole formed in the surface of the end effector. The vacuum cup includes One The part 8 1 8 and the side wall 8 20 with a generally inclined angle α. Α can be used for special applications ranging from 0 to 180 degrees, more suitable between 5 to 50 degrees, and about 30 degrees is best. Side walls 8 2 0 can be extended to a height above the surface of the end effector to form a sealed state with the wafer. With the additional reference of Figures 4A, 4B, and 8, the end effector will be placed in the appropriate position, so When the gas is exhausted from the device 414 via the vacuum channel 410, the wafer 416 comes into contact with the edge source of the side wall 820. The vacuum cup 402 pulls or grasps the wafer 416 by the vacuum generated in the hole of the vacuum cup 402. Pressure The difference will create enough force to maintain the gravitational force on the wafer 4 1 6 that is greater than the gravity. To release the wafer 416 from the end effector 4 1 6, gas (such as nitrogen) can pass through the device 414 and then the vacuum channel. 410 is introduced to increase the pressure through the device 4M, so that the grip will be overcome by gravity. Figure 5 depicts a plan view of another exemplary end effector 506. The end effector described in Figure (13) (13) 200402821 The device 506 is similar to the one described in Figures 3, 4A and 4B. The end effector 506 includes three devices 514 and three vacuum cups 502. The device 514 and the vacuum cup 502 can be placed on the end effector 506 according to the design and special application of the end effector 506. The position ° goes one step further, and the shape of an end effector may include any suitable shape, such as a horseshoe shape, a rectangular shape, a round shape, a fork shape having a single fork or a multi-fork, and the like. A plan view of the actuator 606. The end effector 606 is similar to that described in Figures 4a and 4B, except that the end effector 606 has several vacuum cups 602. In this example, there are five vacuum cups 602 ', each of which includes an extension. The (in other words, non-circular) mushroom-shaped cover 604 ° is more advanced. The end effector 606 includes a general vacuum channel located adjacent to the device 614 on the opposite side of FIG. 5, which includes a branch 514 for each separate device Opened vacuum tunnel. FIG. 7 depicts a plan view of another exemplary end effector 706. The end effector 706 is similar to that described in Figures 3a and 3B, except that a vacuum cup 702 includes several devices 714 therein. The vacuum cup 702 of this example is shaped like a horseshoe, but has a function similar to that of the vacuum cup 402, and includes several elongated mushroom-shaped caps 704 similar to the elongated mushroom-shaped cap 604. Although exemplary end effector seals have been described from certain examples and applications, it is apparent that different improvements and modifications are possible for today's technology without departing from the invention. For example, different methods of manufacturing vacuum by vacuum cups are expected, as when holding and transferring a wafer, using other vacuum cups and mushrooms of different shapes and structures -20- (14) (14 200402821 cover to make a sealed state. III. Wafer Cleaning Method and Apparatus In an exemplary viewpoint of a semiconductor device, a demonstration wafer cleaning method and apparatus are described. This exemplary wafer cleaning method and apparatus can remove debris and particles from the wafer before the electropolishing or plating process, just like removing the processing fluid from the wafer after the electropolishing or plating process. For example, after electropolishing, the peripheral area edges (often referred to as "beveled areas") of the wafer's main surface may contain copper slag. What I want to do is dissolve the copper slag from the outer area and clean the wafer without damaging the thin metal layer inside the wafer. In one aspect, a cleaning module includes an edge cleaning module to remove metal residues on the outside or edges of the wafer. The edge cleaning device includes a nozzle head for supplying a liquid and a gas to a major surface of a wafer. The nozzle supplies the liquid in the edge region and the gas in the inner edge region of the nozzle to reduce the possibility of the liquid on the wafer flowing radially into the metal layer. Figures 9A to 9C depict different perspectives of an exemplary cleanroom module for a cleanroom wafer. As shown in FIGS. 9A to 9C, the exemplary clean room module may include a hemispherical cover 902, a clean room window 904, a cylindrical cover 9 06, a leak sensor 9 0 8 and an oil drip tray. Tube 9 1 0, base block 9 1 2, oil drip disc clamp 9 1 4, oil drip disc 9 1 6, bottom chamber 9 1 8, chuck motor assembly circuit breaker 9 2 0, two DI water Nozzles 9 2 2 (rear) and 9 2 6 (upper), two nitrogen nozzles 924 (rear) and 928 (upper), edge cleaning assembly 9 3 0, optical sensor 9 3 2, chemical in front of wafer Nozzle 9 3 4, chuck 936, drain pan 93 8, upper chamber 940, exhaust and drain 942 (15) 200402821, nitrogen county 944, edge cleaning cap 946, chemical nozzle behind wafer 948, and chuck Motor assembly 950. In addition to one chemical nozzle 934, the clean room module may include one or more chemical nozzles.

The wafer 901 can be put into the clean room by the end actuator 903 or the like. When it is decided that the wafer 901 is placed on the chuck 936 at an appropriate position for cleaning, the chuck motor assembly 950 can rotate the chuck 936 and the wafer 901 about an axis perpendicular to the main surface of the wafer. When the chuck 936 and the wafer 901 are rotated at a rotation speed of about 30 μm, the DI water spray heads 922 and 926 can supply DI water to the upper and lower surfaces of the wafer 901. This DI water can flow through the wafer 901 and then to the wall of the clean room, and is discharged to the exhaust and drain pipe 942 via the drain pan 9 3 8. In order to drain the DI water on the wafer 901 to dryness, the chuck motor assembly 950 can increase the rotation speed to 2000 rpm ± 1000 rpm. The two nitrogen shower heads 924 and 928 can then supply a stream of nitrogen (or other suitable gas) to the upper and lower surfaces of the wafer 901 to further remove DI water from the upper and lower surfaces of the wafer 901. After the wafer 901 is cleaned and dried and the chuck motor assembly 950 is stopped, the edge cleaning assembly 930 slides into position for edge cleaning. Figures 10A to 10B depict an exemplary wafer edge cleaning assembly 930, which includes a DI water pipe 1 006, a rod 1010, a joint rod 1 008, a bracket 1012, a nail 10, 4 and an air tube cylinder 1 〇1. 6, adjustable nail 1 0 1 8, flow regulator 1 020, compressed air tube 1022, rod clamp 1 024, acid tube 1 026, nitrogen tube 1 028, nozzle head 1 030, rod brush 1 032, nitrogen nozzle 1 034, and liquid nozzle 1 03 6. The length of the edge cleaning component 930 can be adjusted for the use of -22- (16) (16) 200402821 2 0mm, 300mm wafers, or to increase or decrease the pole 1 008 for other sizes. The interval between the upper surface of the wafer 901 and the nitrogen nozzle 1 034 may be in the range of 0.1 to 10 mm, and the liquid nozzle 1 036 may be placed above the edge region 1 004. Figures 11 through C illustrate a plan view, a side view, and a front view of an exemplary nozzle head 1 030 included with the edge cleaning module, respectively. As shown in FIGS. 11A to 11C, the nitrogen nozzle head 1 034 manufactures a nitrogen curtain 1102 near the edge of the wafer 901. In the exemplary edge cleaning process, the wafer 901 can be rotated at a rotation speed of about 50 to 500 rpm, preferably at 200 rpm. Liquid nozzle 1 036 supplies a stream of chemicals to form a thin film about 10 mm wide on the outer major surface or edge region 1004 of wafer 901. The chemical agent removes the metal layer or metal residue, but the chemical agent may accidentally flow to the center of the wafer 90 1, and this phenomenon may have a harmful effect on the metal layer. Non-stop chemicals can be used to etch metal residues in the edge area 1004. For example, 10% H2SO4 and 20% H2O2 solution can be used to etch copper metal from the edge region 1004. Also, in order to increase the etching rate, the chemical solution may be heated in a range of 25 ° C to 80 ° C. In order to reduce the possibility of chemical agents diffusing inwardly from the edge, the nitrogen nozzle 1034 supplies or directs a gas flow, such as nitrogen, at the inner edge of the edge zone 2004 to generate a nitrogen curtain Π 'to prevent or At least the possibility that the chemical agent diffuses into the center of the wafer 90 1 is reduced. After the edge area 1004 is cleaned, the liquid nozzle 1036 may supply a spray liquid 1104 of DI water to dilute and / or wash away the chemical agent on the wafer 9 0 1 edge area 104. (17) (17) 200402821 In addition, in one example, after the edge cleaning process, a DI water rinse can be performed by using the DI water nozzles 922 and 926 to clean the top and bottom of the wafer 901. . When the edge cleaning process is completed, the Xia head motor assembly 950 can stop rotating the chuck 936 and the wafer 901, and the edge cleaning assembly 930 can slide out from the edge cleaning position to the stop position. Figures 11D through 11E depict different perspectives of another exemplary nozzle head 1030. The examples in Figure 11D to Figure 11E are similar to the examples in Figure 11A to Figure 11C, except that the nitrogen nozzle 1 034 has a horizontal span 1 034h extending from the nozzle. This horizontal span 1034h can make a nitrogen curtain 3002 to more effectively prevent the chemicals from the edge nozzle 1 036 from spreading to the center of the wafer 901. The distance between the horizontal span 1034h and the surface of the wafer 901 is preferably in the range of about 0.1 mm to 3.0 mm, and most preferably about 1.5 mm. Figures 11F through 11G depict different perspectives of another exemplary nozzle head 1030. FIG. The examples of Figures -F to " Ί-* G are similar to the examples of Figures HD to Figure 11E, except that the horizontal span 1034h extends the nitrogen nozzle 1034 from both sides of the lower part of the nozzle. Figure XI illustrates another exemplary nozzle head 1030. The example in Figure XI is similar to the example in Figures A through C, except that it has two liquid nozzles 1 0 3 6, one is a chemical agent and the other is D1 water. Separate nozzles may provide improved performance during, for example, DI water washing. Figure 12 depicts an exemplary chuck motor assembly 9 50, which may be included in a wafer cleaning apparatus. In this example, the chuck motor assembly 9 50 pack or chuck (18) 200402821 936, upper motor plate 1202, optical sensor 1204, shaft sleeve 1206, motor 1 208, flag 1210, spacer 1212 , Centrifuge shaft 1214, centrifuge 1 2 1 6 and socket 1 2 1 8. Referring again to FIGS. 9A, 9B, and 10A, in order to place a wafer 901 on the chuck 936, an end effector 903 takes the wafer 901 from a processing chamber or a previous corrector, and then for cleaning, The chamber window 904 moves the wafer to the clean room module. Figure 13 depicts an exemplary clean room module 904, which includes an inner plate 1 302, an outer plate 1 304, a bracket 1 306, a flow controller 1308, a cylinder 1 3 10, a cylinder cover 906, and a restrictive sensor side.器 1 3 1 2. The end effector 903 is mounted on the wafer 901 in the chuck 936. The cylinder 1310 can lift the outer tray 1 304 box and close the cleaning room window 904 to start a wafer cleaning process.

As shown in FIG. 12, the exemplary chuck 936 includes a base 1220 and three locators 1222. The chuck 936 can be a 200mm wafer, a 300mm wafer, or any other wafer size modification. When the end effector 903 is loaded into the wafer 901 on the chuck 936, the wafer 901 is positioned on the chuck 936 by the three positioners 1 222. Referring again to FIGS. 9A to 9C, the optical sensor 932 can detect the position of the wafer 901 on the chuck 936. As shown in Fig. 15, in order to check the positioning error of the wafer, the optical sensor 932 shoots a light onto the upper surface of the wafer 901. If the end effector 903 positions the wafer 901 on the upper surface of the positioner 1 222, the light will not be totally reflected back to the reflection sensor 932. As the chuck 936 rotates, this reflection changes. To take this one step further, because the distance between wafer 90 1 and the reflection sensor 932 changes, the gap or variation in reflection can be used to confirm whether wafer 90 1 is -25- (19) (19) 200402821 accurate On the chuck 936 and three positioners 1 222. In one example, when the wafer 901 is accurately placed on the chuck 936 by the three positioners 1 222 and the chuck is rotated, the reflection is read by about 70% to 75%. However, when the wafer 901. is not accurately positioned, the reflection is read about 30% to 60%. A misplaced wafer will detach from the chuck 936 when the chuck 936 rotates at a high speed, and this condition will cause the wafer 901 to crack in the clean room module. An exemplary optical sensor 932 is shown in FIG. 14 and may include a joint tube 1 402, a joint ring 1 404, a reflection sensor 1 406, a rod cover 1 408, an artificial rubber ring 1410, and a rod cover. Rim 1412. It must be recognized that other suitable optical sensors can be used to determine the appropriate position of the wafer relative to the chuck 936. In other examples, the optical sensor 932 may be replaced by a non-optical sensor to measure a wafer surface, such as a proximity sensor, eddy current sensor, sonar sensor, and the like. In order to prevent the wafer 901 from being rotated out of the chuck 93 6 by a relatively high centrifugal force in different cleaning processes, such as an air-drying period, the chuck positioner 1222 may include a centrifuge 1 2 1 6. The centrifuge 1 2 1 6 may include a lower element (i.e., a counterweight) that is heavier than the upper portion and is closer to the centrifuge shaft 1214. When the chuck 936 is rotated at 100 rpm or higher, the centrifugal force causes the weight in the centrifuge 1 2 1 6 to rotate outward. As a result, the upper part of the centrifugal object 1 2 1 6 moves in-phase to grasp and stabilize the wafer 901 to the chuck 936. The weight, length, and appearance of the positioner 1 222 and the centrifuge 1216 can be changed to change the speed at which the positioner 1 222 moves to stabilize the wafer. When the chuck motor assembly 950 decelerates or stops, the centrifugal object 1216 will return to its upper right position due to the decrease in (20) 200402821 or no centrifugal force. In order to stabilize the wafer, the chuck rotation speed is set at about 200 to 3000 rpm, preferably at 2000 rpm.

Figures 16A to 16C depict a wafer with an exemplary backside wafer cleaning process and the positioner 1 222 and wafer backside chemicals. In a demonstration wafer cleaning process, the motor 1 208 vibrates the chuck 936 to face the chemical nozzle on the back of the wafer, so that the chemical can be sent to the back of the wafer 901 without splashing three Wafer positioner 1 222. Chemicals in contact with the wafer positioner 1 222 may splash and erode the upper surface of the wafer. This phenomenon may cause defects in the devices and structures formed on the wafer 90 1. The chemical agent 948 may be placed between the two positioners 1222 and vibrated between the angles β and -β. The back surface chemical agent 948 can move away from the center of the wafer by guiding the back surface chemical agent 948 to move between the included angle and γ to cover the wafer 901 outside the included angle β and -β.

The chemical sent from the chemical 948 will reach the back of the wafer 901, and the cleaning time will be between 5 and 100 seconds, preferably ten seconds. This cleaning process is repeated for one third of the back of 90 1 per wafer. Figures 17A through 17C depict another exemplary wafer backside cleaning process. This process is similar to that described with reference to FIGS. 16A to 16C, except that the chuck 936 is rotated straight and the back side chemical agent 948 is regularly transported, or is “on” between the positioners 1 222, Off when relocator 1 222 is detected. Similar to Figures 16A to 16C, the backside chemical agent 94 8 nozzle can vibrate ± γ during processing. As shown in Figs. 17B and 17C, when the chuck 93 6 is rotated counterclockwise, the back chemical 948 guides -27- (21) (21) 200402821 into the wafer until the angle ^ is stopped. The liquid is again guided to the back of the wafer at an angle a2. In another example, in order to clean the back portion of the wafer 901 that is in contact with the positioner 1 222, the motor 1 208 will generate a rotational momentum with a sufficient degree of rotational acceleration, so that the wafer 90 1 will leave from the original position . Therefore, the chemicals sent from the wafer half-face chemical 948 nozzle can reach the back surface portion of the wafer 901 that has come into contact with the positioner 1 222 before the rotation operation. Before cleaning the entire surface of the back surface of the wafer 901, the DI water nozzle 9 22 will supply a stream of DI water to wash the chemicals on the back surface of the wafer 901. The wafer 901 may undergo a final cleaning cycle. When the chuck 936 and the wafer 901 are rotated at about 30 rpm, the DI water nozzles 9 2 2 and 9 2 6 can simultaneously supply DI water to the upper and lower sides of the wafer 901. In order to remove the DI water and dry the wafer 901, the speed of the chuck can be increased to 2000 rpm and 1000 rpm. The nitrogen nozzles 924 and 928 can then supply a stream of nitrogen to the top and bottom of the wafer 901 to remove the DI water film. Following the description of the exemplary apparatus and methods above, the exemplary cleaning method or sequence may be performed as follows. Start cleaning: a. Return the chuck to its original position. b. Open the outer door 1 3 0 2. c. Place wafer 9 0 1 on chuck 9 3 6. d. Close the outer door 1 3 0 2. (22) (22) 200402821 The front face is clean: e. Rotate the chuck 93 6 at a speed of 10 to 1000 rpm, preferably 50 rpm. F. Send the DI water channel wafer 901 in front of the DI water jet head (top) 926. Stop the DI water coming from the DI water nozzle (upper), and then increase the chuck rotation speed to 1000rpm ~ 2000rpm, 2000rpm is better. h. Send gas from the nitrogen nozzle (top) 928 to dry the top of the crystal Η 901. i. Stop nitrogen flow and stop chuck rotation. Edge cleaning: j. Move the edge cleaning assembly from its rest position to the edge cleaning position by powering the air tube cylinder 1 0 1 6. k. It is better to rotate the wafer 9 0 1, 3 5 0 r p m at a rotation speed of 100 to 5 0 01 · p m, and send nitrogen gas from a nitrogen nozzle 1034 through a nitrogen pipe 1028. l. From the liquid nozzle 1 036 through the acid tube 1 026, send out the edge cleaning chemicals. m. After the metal on edge zone 1 004 is engraved by uranium, stop sending out the edge cleaning chemicals. η. The DI water is sent out from the liquid nozzle 1 036 through the DI water pipe 2006. 〇 After the chemicals on the edge zone 1 004 were washed away, the DI water flow was stopped. P. Nitrogen is sent from a nitrogen nozzle 1 034 through a nitrogen pipe 1 028. (23) (23) 200402821 q. Stop the chuck from rotating and move the edge cleaning device 930 back to the rest position. Rear cleaning: r. Move the chuck 93 6 to the rear cleaning position. In other words, the chemical reagent 94 8 on the back of the wafer is at an equal distance from the two adjacent positioners 1 222. Motor 1 208 begins to swing chuck 936 near the chemical 948 nozzle on the back of the wafer. The swing angle must be less than 45 ° and 5 °. The wafer backside chemical 94 8 nozzle transfers the chemicals to the backside of the wafer 90 1. s. Repeat step r for the second and third regions of wafer 901. Alternatively, the wafer 901 can be continuously rotated in one direction, and the backside chemical 948 is adjusted to avoid the positioner 1222. Moving and rotating the wafer: t. Use a high acceleration to move the wafer 901 during a fast rotation. u. Repeat step s. v. Repeat step s via t for the second third of wafer 901. W. Repeat step S via t for the last third of wafer 901. X. As the wafer rotates at about 50 rpm, the DI water is delivered to the back of the wafer 901 via the DI water nozzle (rear) 922 and the DI water is delivered to the front of the wafer 901 via the DI water nozzle (upper) 926. y. Stop delivering DI water. Rotate the chuck 93 6, at 2000 rpm at a rotation speed of about 10000 to 30000 r p m (2000), preferably 2000 rpm, and then send nitrogen to the front and back of wafer 901. z. Stop the nitrogen flow and stop the chuck 93 6. By lowering the outer plate 1 304 with the cylinder 1310, the clean room window 904 is opened. The end effector 903 will then pick up the wafer 901 and move the wafer to a storage slot (not shown). The above sequence describes a wafer cleaning exemplary method and is not meant to be limiting. There are many different alternatives for cleaning the wafer 90 1 in accordance with other different perspectives of the present invention. For example, a second exemplary method includes the following steps a to d to start the cleaning process as follows; steps j to Q to clean the edges; and steps e to i to clean with DI water and nitrogen. And dry up the front. Another non-standard method includes: the following steps a to d to start the cleaning process; followed by steps j to q to clean the edges; continue to steps r to s to clean the back by chemicals; step e Go to i to clean and dry the front with DI water and nitrogen; and step t to z to clean and dry the back with DI water and nitrogen. In addition, during a subsequent cleaning process, DI water can be supplied to the wafer to prevent any chemicals from being used on the upper main surface during backside etching. It is therefore obvious that for today's technology, different processes for cleaning semiconductor wafers by demonstration devices and methods are expected. Although the device and method for cleaning wafers in certain embodiments, examples, and applications have been described, it is obvious that for the present technology, different improvements and modifications are feasible without departing from the present invention. -31-(25) (25) 200402821 IV. Processing Chamber In another aspect of semiconductor components, a processing chamber is comprised of electropolished and / or plated semiconductor wafers. The demonstration processing chamber is interchangeable with an electropolishing device and a plating device. In an exemplary process, a wafer is rotated when a processing solution is directed to a relatively small portion of a major surface of a wafer. A nozzle or the like that directs the liquid flow is moved in a straight line direction parallel to the main surface of the wafer. To increase the uniformity of plating or polishing a metal layer on the wafer, the rotation of the wafer can be changed to increase the constant linear velocity of the wafer surface in relation to the incident liquid flow. In addition, different exemplary methods and electropolishing or electroplating processes that determine the shape of a thin film are described. FIG. 18 includes an exploded view of an exemplary processing chamber assembly according to an embodiment. Demonstration processing chamber components may include a movable tube cover 1 802, a magnetic connector 1 804, a shaft 1 806, a bracket shaft 1 808, a fender 1810, a tube 1812, a chamber tray 1 8 1 4, a bottom chamber 1 8 1 6, Optical sensor conveyor 1 8 1 8, plug 1 820, processing chamber 1 822, manifold 1 824, nozzle plate 1 826, end point detector 1 828, nozzle block 1 830, side plate 1832, chamber window 1 8 34, Half Moon Room 1836, Door Cushion 1838, and Window Cylinder 1840. The demonstration chamber can be used equally well for electropolishing and / or electroplating, but is generally described in relation to electropolishing. When using the present invention, the nozzle block 1 830, the nozzle plate 1 826, the manifold 1 824, and the movable tube sleeve 1 802 can also be used in an electropolishing process. Either way, they can be replaced by the Concentric Primer -32- (26) 200402821 plating device. A demonstration concentric original electroplating device is in U.S. Patent No. 63 95 1 5 2 and titled METHODS AND APPARATUS FOR ELECTROPOLISHING METAL INTERCONNECTIONS ON SEMICONDUCTOR DEVICES. The statement was dated July 2, 1 999, and

U.S. Patent No. 6440295, entitled METHODS AND APPARATUS FOR ELECTROPOLISHING METAL INTERCONNECTIONS ON SEMICONDUCTOR DEVICES, is described in February 4, 2000, and both are embodied by reference. Taking this one step further, exemplary electropolishing and electroplating processes are described in PCT patent application number PCT / US02 / 36567, entitled ELECTROPOLISHING ASSEMBLY AND METHODS FOR ELECTROPOLISHING CONDUCTIVE LAYERS, stated in November 13, 2002, US Patent No. 6391166 Title is

PLATING APPARATUS AND METHOD, filed in January 15, 1 999, and PCT Patent Application No. PCT / US99 / 1 5506, entitled METHODS AND APPARATUS FOR ELECTROPOLISHING METAL INTERCONNECTIONS ON SEMICONDUCTOR DEVICES, a statement dated August 7, 1 999, borrowed References in all of them are embodied here. To take this one step further, the exemplary end point detector and method are described in US Patent No. 6447668 'entitled METHOD AND APPARATUS FOR END-POINT DETECTION, claiming the order of September 10, 2 02, and by The references in all are embodied. As shown in Figure 19, it can be driven by energy contained in the processing chamber assembly -33- (27) 200402821

System includes x-ray flag 1 902, x-axis drive assembly 1 904, connector 1 9 06, motor 1 90 8, z-axis bracket 1910, Θ drive belt and pulley 1912, 0y-axis reflection sensor 1 9 1 4, X-axis sensor 1 9 1 6, Θ bracket 1 9 1 8, z-axis universal ball joint 1 9 2 0, z-axis stage assembly 1 9 2 2, z-direction moving bracket 1 924, Θ motor 1 926, Θ drive pulley 1 928, chuck assembly 1 930, cover cover assembly 1 93 2, X-axis linear bearing 1 934, y-axis call full thumbscrew 1 936, z-axis disk 1 9 3 8, top Cover 1 940, z-axis linear bearing 1 942, shaft 1944, X-axis magnet 1 946, magnetic separation disc 1 948, y-axis angle bracket 1 95 0, magnet 1 95 2 and magnet bracket 1 954.

An exemplary chuck assembly is described in, for example, US Patent No. 6482222B1, entitled METHOD AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLALATING OF THE WORKPIECES, applied in September 7, 1 99, U.S. Patent number 09/800990, titled

METHOD AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLALATING OF THE WORKPIECES, applied for March 7, 200 1, and patent serial number

09/8 5 6 85 5, titled METHOD AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLATING OF THE WORKPIECES, stated on May 21, 2001. All three are embodied by the references here. • 34- (28) (28) 200402821 As shown in FIG. 18, the processing chamber 1 8 2 2 may include a movable tube sleeve 1 802, which is provided with the collet assembly 1 930 and the sleeve fender 1810. Move to control the process fluid and electrolyte within the chamber area. For optical sensors and end point detectors 1 828, or other components such as sensors for detecting leaks in the bottom chamber 1 8 1 6 or the chamber tray 1 8 1 4, an optical sensor cable It can be installed via the conveyor 1 8 1 8. An additional plug 1 820 can be used as an additional conveyor. The exemplary devices of FIGS. 18 and 19 include a magnet 1 952 to be connected to an X-axis magnet 1 946. The collet assembly 1 930 can be moved in the X direction by sliding on the shaft 1 944 via the X-axis linear bearing 1 9 34. The process drive system can be detached from the process chamber assembly when the demonstration unit is not in use, such as during a process unit change or during maintenance. The motor 1 908 rotates an internal screw in the X-axis drive unit 1 904 counterclockwise to move forward in the X direction. The same or new process drive assembly interfaces with the process chamber assembly in the same way. An example includes a safety margin. If there is an object between the processing drive system and the chamber, or something prevents the X-axis drive assembly 1 904 from moving forward or backward, the magnet 1 95 2 or 1 946 will be removed from the magnetic separation disc 1 948 left. The X-axis drive assembly 1 904 and motor 1 908 will not be able to move the chuck assembly and the upper cover further; at that point, the X-axis sensor 丨 9 1 6 will recognize that the X-axis brought by the stop processing drive system is disengaged, and Motor 1 908 will stop powering. During the installation of irregular devices or regular maintenance, the y-axis calls the full thumbscrew 1 9 3 6 to adjust the position of the chuck assembly 1 9 3 0 on the movable tube cover 1 8 0 2 and adjust the nozzle plate in the y direction. 1 8 2 6. (29) (29) 200402821 Referring to FIGS. 18 and 19, when the demonstration processing chamber is used in a processing application, by connecting the magnet 1 952 on the processing drive system to the magnetic connector 1 804 on the processing chamber assembly, the The process drive system will be docked in the process chamber assembly. The window cylinder 1 840 raises the door cushion 1838 from the half moon room 1 83 6 to make an opening in the room window 1 8 34. A robot (see Figure 1) can transfer wafers 1801 from the previous calibrator through the chamber window 1 8 34. Wafer 1801 is loaded into chuck assembly 1 930 for electro-polishing and / or plating. In order to move the chuck assembly 1 930 from the loading or initial position to the electro-polishing or plating position, the motor in the z-axis stage assembly 1 922 rotates its internal shaft assembly to lower the z-axis disc from the z-axis linear bearing 1 9 4 2 1 9 3 8 until the distance between the chuck assembly 1 930 and the top of the nozzle block 1 830 is in the range of about 0.5 to 10 mm, and 5 mm is better. Alternatively, if the model processing chamber is reserved for plating, the motor in the z-axis stage assembly 1 922 can lower the z-axis disk 1 93 8 from the z-axis linear bearing 1 942 until the crystal on the chuck assembly 1 930 The distance between the circle 1801 and the top surface of the concentric circle device is in the range of about 0.5 to 10 mm, and 5 mm is preferred. After a first metal has been plated with a crystal circle 1801, the 'z-axis disk 1 93 8 can be moved upward in accordance with the method of the additional plating of the wafer 1801. In order to polish the wafer 1801, the demonstration processing chamber uniformly and incrementally removes copper from the copper-plated wafer 1801 by applying currents with different fluid densities to different areas on the wafer. The current and process liquid flow are made based on the wafer data and the requirements set by other users for special applications. User-set requirements may include the number of large movements, the use of large or small nozzles, or the thickness of the copper layer left on the wafer. Typically, a wafer measurement -36- (30) (30) 200402821 metrology tool measures the thickness data of copper plated on a sample wafer. This measurement will help generate a flow ratio table that includes the polishing process flow ratio used at a specific set point on the wafer. This information and the resulting scale table produced a 'sub-general film thickness data' error set by the user. This data can be further modified to formulate wafer data to indicate the thickness, and the current density and fluid velocity during the plating process. . The current density applied to the wafer 1 80 1 can be changed according to the type of erasure. For example, to eliminate the thick metal layer on the wafer 180, a higher flow rate will usually be utilized. To eliminate a thin metal film, a smaller flow rate will usually be used to make a more controlled and accurate procedure possible. A demonstration process for electropolishing a wafer that includes a relatively thick metal layer, or a method that will is described. This demonstration approach typically requires four or more processing steps. First, most removal of thick layers of this metal, such as copper, is performed. Second, the end point detector 1 8 2 8 measures the reflectivity of the remaining copper layer to determine the set point for further polishing of a specific area on the wafer. The process recalculates the thickness of the film based on the reflection readings. Third, based on the new metal film thickness data, a relatively thin layer of copper is removed. Fourth, the end point detector 1 8 2 8 measures the reflective plating of the copper layer to determine whether the wafer 1 80 1 has been polished to the desired thickness and / or data. The third shell fourth step may be repeated until the wafer 1 80 1 is polished to the desired thickness and / or data. It must be recognized, however, that if the end point detector 1 8 2 8 determines that too much copper plating is removed from the wafer 1 80 1, for example, during an initial cleaning process, the present invention may include using copper on the wafer surface Re-plating in specific areas. -37- (31) (31) 200402821 The plating process may include a method in which the nozzles in the nozzle block 1 830 are reversed in voltage by a suitable electrolyte such as CuS04 + H4S04 + H20. An exemplary electroplating apparatus method is described in U.s. Patent Document No. 63 9 1 1 66 previously cited and embodied herein. Exemplary processing method: Step 1 To remove the copper layer on the wafer 1801, when the chuck assembly 1 930 moves in the X direction, the Θ motor 1 926 rotates the chuck assembly 1 930 at a linear and constant speed. The nozzles in the nozzle block 1 830 can guide the processing liquid to the wafer 1801 at a constant flow rate. The rotation speed of the Θ motor 1 926 can be related to the flow density and the linear movement distance of the rotary chuck assembly 1 930. The current ratio used on the wafer 1 80 1 can also be based on the metal film thickness data and the user's set requirements. This exemplary method can continuously infer a new flow density between each data point on the linear movement of the rotary chuck assembly 1930, and a new linear velocity on each data point. This method can be further calculated using this new flow ratio and linear velocity. The process drive moves the chuck assembly 1 930 back to the starting position in the X direction. Step 2: When the Θ motor 1 926 rotates the chuck assembly 1 930 again at a constant linear speed, and the chuck assembly moves forward and backward along the X direction, the end point detector 1 8 2 8 measures the wafer 1 80 1 copper plating The reflectivity of the surface. In this example, the reflectance of wafer 1 80 1 and the linear distance corresponding to the chuck assembly are recorded in a range set by the user. This example extrapolates the new data to the portion of the metal film thickness data. Step 3. Repeat step 1, except that the liquid flow will be adjusted based on the reflectance of the end point detector -38- (32) 200402821 detector 1 828 to the wafer 1 80 1 at a specific linear distance from the wafer position. . A smaller nozzle in the nozzle block 183 0 can be used to complete a more controlled polishing of the copper-plated surface. Step four. Repeat step two. If the reflectance detected from the end point detector 1 828 is greater than the preset value, repeat step 3. During the demonstration polishing process, the chuck assembly 1 930 can be rotated in the following three modes: 1) Fixed linear speed mode: 2πΚ (1 λ where R is the horizontal distance between the nozzle and the wafer, C! Is a fixed number, And ^ is the rotation speed. In actual control, R = 0 causes infinite rotation speed setting 値; Therefore, the mathematical formula (1) can be expressed as follows: (2) + C2) where C2 is a setting according to a specific device and application Fixed number (3

2) Fixed rotation speed mode: & = C3 where C3 is a constant set by a processing method. 3) Fixed centrifugal force mode: = C4 = centrifugal force R (4) where V is the linear velocity, R is the horizontal distance between the nozzle and the wafer, and C% is a fixed number set according to the specific device and application. Mathematical formula (4) can be rewritten as -39- (33) 200402821 by using 丨 / = & 2 竑

A

Vq 2n ^ R

Furthermore, under certain circumstances, R = 0 results in an infinitely large rotation speed setting 値, 3, and the mathematical formula (5) can be rewritten as: ή-^ _ + C5

Among them, C5 is a fixed number set according to the specific device and application. The horizontal or X direction momentum of the chuck can be written as:

2nR (7) where: is the speed of the chuck assembly 1 930 in the X direction, and under certain conditions, R = 0 results in an infinite A. Mathematical formula (7) can be written as:. C6 R =-2n {R ^ Cn), 〇, case where C7 is a fixed number set according to a specific device and application. Although FIGS. 18 and 19 show a processing drive system in which the clamping member 1 930 moves in the X direction, it must be recognized that during the processing period, the nozzle disk 1 826 or the chuck assembly 1 930 and the nozzle disk 1 826 are both The person moves in the X direction according to the special purpose. Figure twenty shows a nozzle head 2054 that may be included in an exemplary process chamber assembly. The exemplary nozzle 2054 includes an enhanced energy unit that can be mounted or mechanically connected to the nozzle 2054. The source-increasing unit 2080 can enhance the vibration of the electrolyte on the surface of the metal film 2004 to provide a higher polishing rate, better surface finishing, and a model nozzle 2054. The energy-enhancing energy unit includes an ultrasonic or magnas nic converter. Electrolyte 2 0 8 1 is put in from the side inlet 5 200 of the nozzle 2054. Between the -40-head group of the ultrasonic converter, a 2080 high-power 208 1 quality can be demonstrated. 2080 Possible Frequency (34) (34) 200402821 Can vibrate in the range of 15kHz to 100MHz. The ultrasonic converter can be made of ferroelectric ceramics, such as barium titanate (LlTaO3), lead titanium hydrochloride 'lead chromate, and the like. The power of the ultrasonic converter can range from 0.01 to 1 w / cm2. In another example, the energy enhanced energy unit 2080 may include a laser. For a similar purpose as described above, a laser is irradiated on the metal surface during electropolishing. The laser can be a solid-state laser, such as a ruby laser, a riveted glass laser, or a riveted: YAG (yttrium aluminum garnet, Y 3 A h Ο 12) laser, a gas laser, such as an ammonia laser , Carbon dioxide laser, hydrogen fluoride laser and so on. The average power of this laser continuous mode can range from 1W to 100W / cm2. In other examples, the laser can be operated in pulsed mode. The pulse mode laser power is much higher than the average mode power, just as it is known by today's technology. The laser can also detect the film thickness of the metal film on the wafer 1 004. In this example, a laser directed to a metal film excites an ultrasonic wave on the metal film. The thickness of the metal film 2004 can be measured during the ultrasonic polishing process through detected ultrasonic waves. By changing the flow, the nozzle speed in the radiation direction, etc., the thickness of the metal film 2004 can be used to control the polishing rate. In another example, the energy enhanced energy unit 2080 may include an infrared light source used to toughen the metal film 2004 during the polishing process. The infrared light source can provide an option to control the surface temperature of the metal film during polishing. The power of the infrared light source can be in the range of lw to 100w / c 1112. An infrared light source can also be used to smelt metal -41-(35) (35) 200402821 films during the polishing process. The graininess and structure of the osmium are very important in determining the electromigration performance and resistance of copper internal connections. Because temperature is a factor that determines the grain shape and structure of the metal layer, an infrared light source can be used to detect the surface temperature of the metal film during the polishing process. An infrared light source can also be used to determine the temperature of the metal film. By modifying the power of the infrared light source, changing the flow density, and the like, monitoring this temperature provides temperature adjustment during the polishing process. In another example ', during a polishing process, the energy enhanced energy unit 2080 may include a magnetic field to focus a polishing fluid on the wafer 2004. Concentrated polishing fluids take into account the enhanced control of nozzle polishing rate data, which is even more important for relatively large diameter nozzles. A magnetic field in the direction of the electrolyte flow is generated, that is, a direction perpendicular to the surface of the metal film. A magnet and an electromagnet, a superconducting coil drive magnet or the like can be used to generate and concentrate the magnetic field. It must be recognized that other energy sources, such as ultraviolet, X-ray, microwave sources, etc., can also be used to enhance the performance of electropolishing processes as generally described above. Although exemplary chamber membrane sets and processes related to specific embodiments, examples, and applications have been described, it will be apparent that different improvements and modifications are possible for today's technology without departing from the invention. V. Plating Device and Processing Another aspect of a semiconductor assembly, a plating device and method are included to plate a semiconductor wafer. In an electroplating device and process, what is desired is 42- (36) (36) 200402821 where the treatment liquid is evenly spread on the wafer surface to plate a metal film of the same thickness. In an exemplary process, the spray head of an electroplating device is described as including a filter block that blocks the instant flow of electrolyte and more evenly distributes the processing fluid through the nozzle pipe before the emergence of the shower head. Distributing the liquid more uniformly through the pipe results in equal or almost equal flow rates of the electrolyte from each hole of the showerhead assembly to increase the uniformity of the plating process. FIG. 21 illustrates an exploded view of a conventional plating apparatus for plating a semiconductor wafer 2102. As shown in FIG. The electric polishing device may include a half-moon chamber 2104, a fixed cover 2106, a plating nozzle assembly 2108, an exhaust pipe 21 10, a liquid inlet 2112, an electrolyte fit through 2114, a liquid fit through 2116, a chamber tray 2118, a bottom chamber window 2120, a bottom Chamber 2122, processing chamber 2124, chamber window 2126, cap assembly 2130, liquid inlet tube 2132, electrode cable 2134, and shaft 2136. Cap assembly 2130 may be similar in function to the exemplary cap assembly previously discussed under the heading "Processing Chamber". For example, the fixed cover 2106 covers the wafer chuck (not shown) to prevent electrolyte from spilling out of the chamber during the plating and drying process. As shown in FIG. 21, the wafer 2102 is loaded into the wafer chuck of the upper cover assembly 2 130 in the plating device through the half-moon chamber 2104. In order to plate the copper on the wafer 2 1 0 1, the upper cover assembly 2 1 3 0 will lower the wafer 2 1 2 and position the wafer above the top of the plating nozzle assembly 2 1 08. In a demonstration electroplating process, when the gap between the wafer 2 102 and the plating head assembly 2 108 is in the range of about 0.1 mm to 10 mm, 2 mm is better, a portion of a first metal layer Storage is performed. The lid assembly 2 1 30 can raise the wafer 2 1 02 by an additional 2 mm to 5 mm, and a second deposit can be performed where the thicker layer of copper (37) 200402821 on the wafer is stored.

Demonstration plating processes and procedures are described in US Patent No. 639 1 1 66, entitled PLATING APPARATUS AND METHOD, January 15, 1999, US Patent Application No. 09/83 7902, entitled PLATING APPARATUS AND METHOD, April 18, 2001, and US Patent Application Serial No. 09/8 3 7 9 1 1 entitled PLATING APPARATUS AND METHOD, filed on April 18, 2001. Its entire content is specified by reference.

Fig. 22 depicts an exploded view of a conventional sprinkler device 2108 for a plating process. The showerhead device 2108 may include an outer channel ring 2202, a showerhead 2204, and a showerhead 2206. Figures 23 and 24 depict exploded views of exemplary showerheads for plated 300mm wafers and 200mm wafer assemblies, respectively. For the use of 200mm wafers, it is only necessary to replace the 300mm outer channel ring 2302 with a 200mm outer channel ring 2402, and replace the 300mm nozzle head 23 04 with a 200mm nozzle head 2404. Therefore, the showerhead 2006 can be used on 300mm and 200mm wafers. Regarding FIG. 24, when the wafer size is reduced from 300 mm to 200 mm, the nozzle head 2404 may include fewer rings and the diameter of the outer channel ring 2402 may be smaller. It must be recognized, however, that this demonstration head can be mounted for any size wafer. Figure 25A depicts an exploded view of an exemplary showerhead. As shown in FIG. 25A, the shower head 2206 may include an electrode ring 2502, a nut 25 04, an electrode connector 2506, an electrode external connector 2508, a small inlet camber device 25 10, an inlet camber device 2512, and an electroplating filter. A core block 2514, a nozzle base 25 16, a filter core gasket 2518, and a plated filter core sleeve 2520. Every Electricity -44- (38) 200402821

The electrode ring sleeve 2502 is installed on a corresponding plated ring sleeve 25 20, and the electrode is fastened by clamping the electrode of the electrode ring sleeve 25 02, the nut 2504, the electrode connector 25 06, and the electrode outer connector 2508. The collar 2502 is locked into the top of the nozzle base 2516. As shown in FIG. 21, each electrode is connected to an outer electrode connector 2508 via an electrode cable 2134. The electrode ferrule 2502 may be made of corrosion-resistant uranium or an alloy, such as platinum, platinum-coated titanium, and the like. The showerhead base 25 1 6 will have channels for the electrolyte flow from the inlet camber device 25 1 2 and the small inlet camber device 25 1 0.

Looking further at Figure 25A, the entrance camber device 2512 can be larger than the width of the channel in the nozzle base 25 1 6 and the entrance camber device cannot be bolted to the 7- or 10-ring. Same location. In order to fasten the inlet camber device on the nozzle base 25 1 6 and evenly distribute tension and weight on the ring sleeve, every other small inlet camber device 25 1 0 or inlet camber device 25 1 2 and the relative filter block 25 1 4 is placed on the opposite semicircle (filter block 25 14 is not shown). Similar to the entrance camber device 25 1 2, the electrode ferrule 2502 is mounted on the electroplated filter core ferrule 25 20 so that the electrode and each other electrode ferrule are placed on the other half of the circle. FIG. 25B depicts an exploded view of a liquid flow block assembly composed of a plated filter ring sleeve 2520 and a plated filter block 25 1 4 together with a filter gasket 25 1 8, and an electrode ring sleeve 25 02 installed in the liquid flow block assembly. This exemplary liquid flow block assembly will be placed above the showerhead base 2516 below the inlet camber 2512, and over the center of each plated filter block 25 1 4 with a ring 2530 (not shown). Each electroplated filter ring sleeve 25 20 has a hole 25 22, and the center of each hole has -45- (39) (39) 200402821 a narrow aperture. Now referring to FIGS. 25A and 25B, when the liquid flow block assembly and the electrode collar 2 5 0 2 are latched on the nozzle base 2 5 1 6, one channel is on the plated filter collar 2520 and the nozzle base Formed between the bottom. Electrolyte will flow in from the inlet camber 25 1 2. The electrolyte flow will first reach the center of the plated filter block 25 1 4 above the inlet and spread through the channel. When the electrolyte rises in the channel, the electrolyte will flow out of the holes 25 22 and reach the electrode ring 2502 uniformly. The electrolyte passes through the electrode ring 2502 and flows uniformly onto the surface of the wafer 2102 through the port 2524 in the nozzle head 2004. Figure 25C depicts the relationship between the holes 25 22 and the nozzle head openings 2 5 24 on the bottom of the shower head 2006. As shown in FIGS. 25C and 22, the nozzle head 2004 is stacked on the nozzle head 2006, and the nozzle 2524 is placed between two holes 2522. This staggered position allows the electrolyte fluid flow discussed earlier to flow more evenly through each recess in the liquid block assembly. As shown in the top view of the showerhead in Figure 25D, the port 25 24 is stored around an outer ring on the showerhead 2204 (or 2304 or 2404). These ports 25 and 24, which are also in the closed ring on the head 2240, can be made into any shape according to special applications, such as round, long and so on. In relation to Figure 24, the mouth 2524 can be made into an elongated circle shape, which is formed by three circular holes. If there is no electroplated filter block 25 1 4, the inlet camber device 25 1 2 can send the electrolyte directly through one or more holes above the inlet camber device, resulting in an uneven distribution of the electrolyte throughout the channel. . Since the electrolyte flows from an outlet, the hydraulic pressure of the electrolyte can be difficult to control. With the -46- (40) (40) 200402821 liquid flow block assembly, this demonstration device can provide better control of the electrolyte for metal precipitation, such as copper, because the plated filter block 25 1 4 will hinder the immediate electrolyte Flow and distribute the electrolyte across the channel. The distributed electrolyte provides an equal or nearly equal volume of electrolyte over the entire channel and flows out of each hole 2522 in the electroplated filter ring sleeve 2520. As shown in FIG. 25E, the electrolyte comes out of the electrode outer connector 2508, passes through the nozzle base 2516 and the electroplated filter ring sleeve 2520, bypasses the electrode ring sleeve 2502, and flows out the port 2524 on the nozzle top 2004. Although exemplary sprinkler devices related to specific embodiments, examples, and applications have been described, it will be apparent that different improvements and modifications can be made to the present technology without departing from the invention. VI. Method and Apparatus for Flattening a Wafer According to another aspect, the method and apparatus for flattening a semiconductor wafer are related to a processing module, such as an electropolishing or plating apparatus. Generally speaking, when processing a wafer, it is desirable that the wafer is flattened so that the major surface of the wafer is parallel to a surface of a processing chamber or a tool. For example, calibrating a wafer in a processing unit increases polishing or plating consistency. Figures 26A and 26B show an exemplary leveling tool that can be used to measure the parallel distance of wafer 2602 relative to a processing device, such as a processing chamber, within ± 0. 0 to 01 inches. As shown in FIGS. 26A and 26B, the leveling device generally includes a leveling tool 2604, a ground line 2610, a signal line 1612, a control system 2614, and a chuck 2 6 1 6. (41) 200402821 A model chuck is described in U.S. Patent No. 6482222B1, entitled METHOD AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLATING OF THE WORKPIECES, filed on September 7, 1,999, and U.S. Patent.

Document No. 6495007, titled METHOD AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLALATING OF THE WORKPIECES ^ Statement was made on March 7, 2001, and both of them are embodied by reference here.

With reference to Figures 26A and 26B, the chuck 2616 chucks the wafer 2602 during a semiconductor electropolishing and / or plating process. To prepare for a more uniform electro-polishing and / or plating process, the wafers are placed parallel or near-parallel to the processing chamber 2630, particularly with the plating head or polishing nozzle (not shown) of the processing apparatus. A leveling tool 2604 may be placed inside the processing room 2630 to provide increased wafer adjustment. The leveling tool 2604 may include three sensors 2606 and corresponding signal lines 2612. When the leveling tool 2604 is placed under the chuck 2616 and the wafer 2602 is taken down to the leveling tool 2604, the signal line 2612 (via the sensor 2606) provides a connection to the control system 2614. The connection is formed by A thin metal layer on the surface of wafer 2602. The ground wire 2610 from the control system 2614 is connected to the metal layer of the wafer 2602. When the sensor 2 606 contacts the thin metal layer, the circuit between the sensor 2606 and the ground line 2610 is completed and can be measured by the controller 26 1 4. -48- (42) (42) 200402821 In addition, as shown in FIG. 26B, the leveling tool 2604 may include a post 2608 for measuring the parallel distance between the wafer 2602 and the polishing nozzle in the chuck 2616, and The leveling tool 2604 is located near the surface of the wafer 2602. FIG. 26C depicts a cross-sectional view of an exemplary sensor 2 6 0 6. The sensor 2606 may include a bracket 2626, a fixing screw 2618, a needle adjuster 2 6 20, a contact screw 2622, and a needle 2624. The signal line 2602 is connected to the sensor 2606 through a contact screw 2622. The holder 2626, the needle adjuster 2 620, and the needle 2624 may be made of a metal or an alloy, such as stainless steel, a stainless steel set, or gold. Regarding the processing tool, in the example of parallel or tuning of the measurement wafer 2602, the chuck 2616 is lowered toward the leveling tool 2604 until the pin 2624 of one of the sensors 2606 contacts the conductor surface of the wafer 2602. The contact completes a circuit including a signal line 26 1 2, a ground line 26 1 0, and a control system 2 6 1 4, and provides a signal to the control system 2 6 1 4. The control system 2614 decides from the initial position of the collet 2616 to the position of the needle at the moment of contact. The chuck 2616 continues to descend until the second sensor 2606 and the third sensor 2606 contact the surface of the wafer 2606. The distance corresponding to the contact between the two sensors 2 606 is calculated, and then the measurement procedure ends. As shown in FIG. 27, the exemplary process may include a software interface that displays a measurement distance when each sensor 2606 is in contact. This interface can also display the position of the sensor 2606. The smaller the difference between the maximum and minimum measurement distances, the closer or closer the wafer 2602 is adjusted to (43) (43) 200402821 near-parallel relationship. This information can be used to adjust the position of the chuck 2 6 1 6 ′ and, of course, the wafer 2 6 2. After adjustment, the measurement process can be repeated until the difference between the maximum and minimum measurement distances is within the design specification range, for example, ± 0. 〇 〇 1 inch or depending on the particular application. Although exemplary wafer tuning methods and systems related to specific implementation benefits, examples, and applications have been described 'obviously' for today's technology, different improvements and modifications are possible without departing from the invention 0 Detailed descriptions of the different devices, methods, and systems above are provided to describe the exemplary implementation benefits and are not meant to be limiting. Obviously, for the present technology, different improvements and modifications are feasible within the scope of the present invention. For example, different non-standard electropolishing and electroplating devices, such as clean rooms, optical sensors, liquid delivery systems, end point detectors, etc. can be used together in a single processing unit, or they can be used separately Enhanced electropolishing and / or plating systems and methods. Therefore, the present invention is defined by the scope of additional applications and should not be limited by the description herein. [Brief description of the drawings] FIG. 1 depicts an exemplary semiconductor processing component that can be polished and / or plated with a semiconductor wafer; FIG. 2 depicts a robot including an exemplary end effector for transferring semiconductor wafers; FIG. 3 depicts a A plan view of a model end effector; Figures 4A and 4B depict a plan view of a model end effector and a cross-section view of -50- (44) (44) 200402821; Figure 5 depicts a plan view of a model end effector Figure 6 depicts a plan view of an exemplary end effector; Figure 7 depicts a plan view of an exemplary end effector; Figure 8 depicts a side view of an exemplary vacuum cup; Figure 9A depicts an example with a hemispherical cover Clean room module; Figure 9B depicts a partial internal view of a clean room module; Figure 9C depicts an exploded view of a clean room module with details of a clean nozzle; Figures 10A and 10B Describes a top view and a side view of an exemplary edge cleaning module; Figures-A to XI describe a sample nozzle head that is included as part of an angled cleaning module The same view; FIG. 12 depicts an exploded view of an exemplary motor assembly included as part of a clean room module; FIG. 13 depicts an exploded view of a clean room window included in the clean room module, FIG. Fourteen depicts an exploded view of an exemplary optical sensor included in a clean room module; Figure fifteen describes an exemplary method whose purpose is to determine the appropriate position of a wafer on a chuck; Sixteen C and FIGS. 17A through 17C describe exemplary wafer cleaning processes; FIG. 18 illustrates an exploded view of an exemplary processing chamber assembly; -51-(45) (45) 200402821 Figure 19 describes a An exploded view of an exemplary process drive system that can be included in the process chamber assembly of FIG. 18; FIG. 20 depicts an exemplary nozzle with an energy-enhancing element; FIG. 21 depicts an exploded view of an exemplary plating device Figure 22 depicts an exploded view of an exemplary plating nozzle assembly shown in Figure 21; Figure 23 depicts an exploded view of an exemplary 300mm wafer plating nozzle assembly; Figure 24 depicts an exemplary 200mm wafer Circular plating spray Exploded views of the components; Figures 25A to 25E depict different views of the nozzles in Figures 22 to 24. Figures 26A and 26B depict an exemplary leveling tool assembly. Top view and cross-sectional view of a wafer chuck; FIG. 26C depicts a cross-sectional view of an exemplary sensor in FIGS. 26A and 26B; and FIG. . Component symbol comparison table 100: module 102: electric chassis module 104: clean exhaust / treatment exhaust pipe 106: clean module module 107: clean room module-52- (46) 200402821 108: main structure ( backend ΠΒΕ ”) 1 10: AC control module 1 12: Liquid delivery system (LDS) 1 14: Gas control system (GCS)

1 1 6: Treatment Drain Pipe 1 1 8: Hoe and Wave Eliminator 1 20: Cabin Exhaust Pipe 122: Treatment Tank 1 2 4: Liquid Filter 126: Liquid Sealed Tray 128: and Double Sealed Zone 130: Treatment Mold Group component 1 3 1: Plating component 132: Front structure (factory interface, “FI”) 134: Wafer previous corrector

136: Front panel 1 3 8: Light source tower 140: Robot structural component 142: Robot controller 144: Emergency machine stop (EM〇) button 1 4 6: Front open integrated vertical slot (F〇UP) 147: Robot component 148: Dry end effector 149: Wet end effector-53- (47) 200402821 1 5 0: Wafer

1 5 2: Fan filter unit 206: End effector 216: Wafer 302: Vacuum cup 306: End effector 320: Nitrogen valve 322: Vacuum valve control 402: Vacuum cup 404: Mushroom cover 405: Channel 406: End effector 408: Deleted part 412: Vacuum channel 414: Device

4 1 6: Wafer 5 02: Vacuum cup 5 0 6: End effector 5 14: Device 602: Vacuum cup 604: Mushroom-shaped cover 606: End effector 702: Vacuum cup 704: Mushroom-shaped cover -54- (48 200402821 706: end effector 714: device 8 1 8: bottom 8 2 0: side wall 901: wafer

90: Hemispherical cover 904: Clean room window 906: Cylinder cover 908: Leak sensor 9 1 0: Oil drip tray drain tube 912: Base 9 1 4: Oil drip tray clamp 9 1 6: Oil drip tray 9 1 8: bottom chamber

9 20: Chuck motor assembly circuit breaker 922: DI water nozzle (rear) 926: DI water nozzle (upper) 924: Nitrogen nozzle (rear) 92 8: Nitrogen nozzle (upper) 930: Edge cleaning assembly 93 2 : Optical sensor 934: Chemical nozzle in front of wafer 9 3 6: Chuck 9 3 8: Drain tray -55- (49) 200402821 940: Upper chamber 942: Exhaust and drainage pipe 944: Nitrogen county 946: Edge Clean cover 948: Chemical nozzle behind wafer 950: Chuck motor assembly 1 004: Edge area

1 006: DI water pipe 1 0 1 0: Rod 1 008: Join pole 1 0 1 2: Bracket 1 0 1 4: Pin 1016: Air tube cylinder 1 0 1 8: Adjustable pin 1 0 2 0: Flow regulator

1 022: Compressed air tube 1 024: Rod clamp 1 026: Acid tube 1 028: Nitrogen tube 1 030: Nozzle head 1 032: Rod brush 1 034: Nitrogen nozzle 1 034h: Horizontal span 1 036: Liquid nozzle (50) 200402821

1 102: Nitrogen curtain 1 104: Spray liquid 1 202: Upper motor plate 1 204: Optical sensor 1 206: Shaft sleeve 1 2 0 8: Motor 1 2 1 0: Flag 1 2 1 2: Separator 1 2 1 4: Centrifuge shaft 1 2 1 6: Centrifuge 1218: Socket 1220: Base 1 222: Positioner 1 3 0 2: Inner plate 1304: Outer plate 1 3 0 6: Bracket 1 3 0 8: Flow controller 1310: cylinder 1 3 1 2: limit sensor 1 402: joint tube 1 404: joint 0 ring 1 406: reflection sensor 1 4 0 8: rod cover 1 4 1 0: artificial rubber ring -57- (51) 200402821

1 4 1 2: lever sleeve rim 1801: wafer 1 802: movable tube sleeve 1 804: magnetic connector 1806: shaft 1 808: bracket shaft 1 8 1 0: fender 1812: tube 1 8 1 4: Chamber tray 1816: bottom chamber

1 8 1 8: Optical sensor conveyor 1 820: Plug 1 822: Processing chamber 1 824: Manifold 1 8 2 6: Nozzle plate 1 828: End point detector 1 8 3 0: Nozzle block 1 8 3 2: Side plate 1 8 3 4: Room window 1 836: Half moon room 1 8 3 8: Door pad 1 840: Window cylinder 1 902: X-ray flag 1 904: X-axis drive unit-58- (52 200402821 1 906: Connector 1 9 0 8: Motor 1 9 1 0: Z-axis bracket 1 9 1 2: (9 Drive belt and pulley 1 9 1 4: 0 Y-axis reflection sensor 1 9 1 6: X axis sensor 1 9 1 8: 0 bracket

1 920: z-axis universal ball joint 1 9 2 2: z-axis stage assembly 1 924: z-direction moving bracket 1 9 2 6: 0 motor 1 9 2 8: 0 drive pulley 1 9 3 0: chuck assembly 1 9 3 2: Cover cover assembly 1 9 3 4: X-axis linear bearing

1 9 3 6: y-axis call thumb screw 1 9 3 8: z-axis disk 1 9 4 0: top cover 1 9 4 2: z-axis linear bearing 1944: shaft 1 946: x-axis magnet 1 948: magnetic Separation disc 1 950: y-axis angle frame 1 95 2: Magnet-59- (53) (53) 200402821 1 954: Magnet bracket 2004: Metal film 2006: Nozzle 2054: Nozzle 2080: Enhanced energy unit 208 1: Electrolyte 2102: Semiconductor wafer 2104: Half-moon chamber 2106: Fixed cover 2108: Plating nozzle assembly 2 1 1 0: Exhaust pipe 2 1 1 2: Liquid inlet 2 1 1 4: Electrolyte 2 1 1 6: Liquid 2 1 1 8 : Chamber tray 2 120: bottom chamber window 2122: bottom chamber 2 124: processing chamber 2126: chamber window 2 1 3 0: lid assembly 2 1 3 2: liquid inlet tube 2 1 3 4: electrode cable 2136: shaft 2 2 0 2: Outer channel ring (54) (54) 200402821 2204: Nozzle top 2206: Nozzle 2302: Outer channel ring 2304: 3 00mm Nozzle top 2402: Outer channel ring 2404: 200mm Nozzle top 2 5 0 2: Electrode ring cover 2504 : Nut 2506: Electrode connector 2508: Outer electrode connector 25 10: Small entrance camber device 25 12: Entrance camber device 2 5 1 4: Electroplated filter block 25 16: Nozzle base 2518: Filter washer 2520 : Plating filter Ring 2522: Hole 2524: □ 2530: 〇 Ring 2602: Wafer 2604: Leveling tool 2606: Sensor 2 6 0 8: Pillar 2 6 1 0: Ground wire (55) 200402821 2 6 1 2: Signal wire 2614: control system 2 6 1 6: chuck 2 6 1 8: fixing screw 2620: pin adjuster 2622: contact screw 2624: pin 2626: bracket 5 200: side entrance

Claims (1)

(1) (1) 200402821 Pickup, patent application scope 1. A device for processing one or more semiconductor wafers, including: a module storing one wafer; several vertically stacked processing modules, the purpose of which is to Polishing at least one of the wafer and electroplating the wafer; a cleaning module; and a robot whose purpose is to transfer between the storage module, the processing module, and the cleaning module, wherein the The device is divided into at least two regions with the characteristics of a separate architecture. 2 The device as described in item 1 of the patent application scope, further comprising a previous calibration module used to calibrate the wafer prior to processing. 3. The device according to item 1 of the patent application scope, wherein the robot includes one or more end effectors for picking up or transferring the wafer. 4. The device according to item 1 of the patent application scope, wherein the robot can be moved by rolling out or sliding out of at least two areas. 5. The device of the scope of patent application item 1, wherein the robot includes a first end effector for transferring the wafer to the processing module, and a second end effector for transferring from the processing module The wafer 〇. The device according to the first item of the scope of the patent application, further includes a liquid transfer system whose purpose is to transfer the processing liquid to the processing module. 7. The device according to item 6 of the patent application scope, wherein the liquid conveying -63- (2) (2) 200402821 system includes a surge suppressor. 8. The device according to item 6 of the patent application, wherein the liquid delivery system includes a controller for adjusting the flow rate of the treatment liquid. 9. The device according to item 6 of the patent application, wherein the liquid delivery system is stored in a sealed tray. 10. The device according to the scope of patent application item 1, wherein the device includes an exhaust pipe for removing gas from the processing module. 1 1. A method of electropolishing and plating at least one of a wafer in a processing module, comprising: using a first end effector to transfer a wafer to one of a plurality of vertically stacked processing modules; Polishing or plating the wafer in the processing module; using a second end effector to transfer the wafer from the processing module to a cleaning module; and cleaning the wafer in the cleaning module, wherein The processing module is divided into at least two regions having the characteristics of a separate architecture. 12. A method as described in item 11 of the patent application scope, which further includes using a robot in transferring the wafer, and wherein the robot is mounted to slide out or roll out of the processing assembly. 13. The method according to item 11 of the patent application scope, which includes a further step of transferring liquid to the processing module via a supply line, wherein a surge suppressor is integrated with the supply line. 14. The method of claim 11 in the patent application, which further includes removing gas from the processing module via an exhaust system. -64- (3) (3) 200402821 1 5. —A device for grasping a semiconductor wafer, comprising: a hole on one side of an end effector part; a channel connected to the hole, its purpose To expel gas from the hole and when the gas is expelled from the hole, a cup configured around the hole is installed to make a temporary seal between the end effector and the wafer. 16 The device of item 15 further includes a cover having a groove formed thereon, and the cup is arranged above the hole. The device of item 16 in the scope of patent application 'where the cover is Make it round. 18. A device as described in item 15 of the patent application 'one step closer includes two or more connected to the vacuum channel @ 洞 1 ° 19. A device as described in item 15 of the patent application' one step closer to including Two or more holes 1 'connected to the vacuum channel and within a single cup. 20. The device of item 15 of the patent application, wherein the cup comprises a flexible substance. 2 1. The device of item 15 of the scope of patent application, wherein the cup comprises an elastomeric substance. 22. The device of the scope of patent application item 15 wherein the cup extends from the surface of the end effector portion. 23. The device according to item 15 of the scope of patent application, wherein the cup is made into a circle -65-(4) (4) 200402821. 24. The device according to item 15 of the scope of patent application, wherein the cup is made into an elongated circle. 25. The device according to item 15 of the patent application, wherein the cup is formed in a horseshoe shape. 26. The device according to item 15 of the patent application scope, wherein the end effector is mechanically connected to a robot, and the cup is arranged at an end of the end effector. 27. The device according to item 15 of the patent application, wherein one end of the end effector is horseshoe-shaped. 28. The device according to item 15 of the patent application, wherein the vacuum channel is integrally formed with the body of the end effector. 29. The device according to the scope of patent application item 15, wherein the vacuum channel is connected to a vacuum source. 30. The device according to item 29 of the patent application, wherein the vacuum channel is further connected to a gas source to introduce a gas into the vacuum channel. 3 1 · — A method of grasping a semiconductor wafer, comprising: placing a terminal 5 and the actuator near the main surface of a wafer; discharging a flexible cup disposed on the main surface of the terminal actuator, the The end effector faces the major surface of the wafer; and a temporary seal is made between the vacuum cup and the wafer. 32. The method according to item 31 of the patent application scope, wherein the elastic cup is adjacent to the upper main surface of the wafer and is sufficiently evacuated to grasp the wafer to resist gravity. -66- (5) (5) 200402821 33. The method according to item 31 of the patent application scope, wherein the elastic cup is adjacent to the lower main surface of the wafer and is evacuated to a lower pressure relative to the surrounding environment. 34. The method according to item 31 of the patent application scope, wherein the elastic cup is circular. 35. The method of item 31 in the scope of patent application, which further includes introducing gas into the elastic cup to release the wafer. 36. The method according to item 31 of the patent application, wherein the elastic cup is emptied through a hole formed in the recess. 37. The method of claim 31, wherein the elastic cup includes a cover disposed on the hole, and the cover has a groove formed therein. 38 · An apparatus for cleaning a semiconductor wafer, comprising: A wafer edge cleaning assembly includes a nozzle head that is assembled to supply a liquid-in-gas to a main surface of the wafer, wherein the liquid is It is supplied to the outer edge near the main surface of the wafer, and the gas is supplied radially inward to the position where the liquid is supplied. 39. The device according to item 38 of the patent application, wherein the gas and liquid are supplied from an adjacent nozzle. 40. The device of claim 38, wherein the gas is nitrogen and the liquid includes a metal etching chemical. Small 1. The device according to item 38 of the scope of patent application, wherein the nozzle is supplied with the gas to prevent the liquid from radiating radially inwardly on the main surface of the crystal circle. -67- (6) (6) 200402821 42. The device of the scope of patent application item 38, wherein the nozzle is provided to supply a gas in the form of an air curtain to prevent liquid from passing through the gas. 43. The device of the scope of patent application item 38, wherein the nozzle includes a horizontal span parallel to the major surface of the wafer to create a gas barrier between the horizontal span and the facing major surface of the wafer. 44. The device according to item 43 of the patent application, wherein the distance between the horizontal span and the major surface of the facing wafer is approximately 0.1 mm to 2.0 mm. 45. The device according to item 43 of the patent application, wherein The distance between the horizontal span and the major surface of the facing wafer is approximately 1.5 mm. 46. The device of the scope of patent application item 38, further comprising a chuck for rotating the wafer close to the nozzle. 47. The device according to item 46 of the patent application, wherein the chuck assembly includes a positioner which is installed to stabilize the wafer when the chuck is rotated. 48. The device according to item 47 of the patent application, wherein the positioner includes a first part and a mechanically connected second part, and the mass of the first part is greater than that of the second part, so that during the rotation, the first part faces The outer movement and the second portion move inward to stabilize the wafer. 49. The device according to item 48 of the patent application, wherein the positioner includes a rotation axis, and the first portion is placed below the rotation axis and the second portion is placed above the rotation axis. 5 0 · A method for cleaning semiconductor wafers, including: an edge cleaning process including rotating a wafer about a central axis; -68- (7) (7) 200402821 guiding a fluid to the wafer The main surface; and radially inwardly directing a gas to the main surface of the wafer at a position close to the position where the liquid is guided. 5 1. Method according to item 50 of the patent application 'wherein the gas reduces the possibility of the fluid flowing radially inward onto the semiconductor ° 52. Method such as item 50 in the patent application' where the gas and liquid Also supplied. 53. The method of claim 50, wherein the gas is introduced during and before the process of introducing the fluid into the wafer. 54. The method of claim 50, wherein the gas is introduced during and after the process of introducing the fluid into the wafer. 55. The method of claim 50, wherein the gas includes nitrogen and the liquid includes a metal etching chemical. 56. The method of claim 50, wherein the liquid is supplied to a beveled area on the main surface of the wafer. 57. The method according to item 56 of the patent application, wherein the gas is supplied to the radial inner edge of the inclined surface. 58. A method as described in item 50 of the patent application, wherein the gas is supplied to a region close to the region to which the liquid is supplied, and the region has a width in a radial direction and a length in a peripheral direction to reduce the radial inward flow of liquid crystals. Round possibilities. 5 9 · The method according to item 50 of the scope of patent application, wherein the chuck is rotated at a speed of about 50 rpm to 500 rpm during the edge cleaning process. (8) (8) 200402821 60 A method wherein the chuck rotates the wafer at a speed of 350 rpm during an edge cleaning process. 61. The method according to item 50 of the patent application scope, which further includes supplying DI water to both major surfaces of the wafer. 62. The method according to item 50 of the patent application, which further includes drying the wafer by rotating the wafer at a speed of about 1000 rpm to 3000 rpm and supplying air to the main surface of the wafer. 63. The method of item 50 of the patent application, which further includes guiding a liquid to the back of the wafer during one-third of the wafer shaking so that the liquid does not directly touch and hold the wafer Locator. 64. The method of item 50 of the patent application, which further includes pulsed guiding a liquid to the back of the wafer so that the liquid does not directly contact the positioner holding the wafer. 65. The method of item 50 of the patent application, which further includes rotating a chuck with a sufficient acceleration so that the wafer moves relative to the chuck and repeats a cleaning process. 6 6. A method for determining the position of a wafer on the chuck, including: rotating a wafer positioned on the chuck; when the wafer is rotated, a sensor is used to measure the wafer master A characteristic of the surface; and whether the wafer is correctly placed is determined based on the measured characteristic. 67. The method of claim 66, wherein the sensor is an optical sensor that measures the reflection of light from the surface of the wafer. -70- (9) (9) 200402821 68. The method according to item 66 of the patent application, wherein if the reflection changes below a threshold, it is determined that the crystal is not correctly placed on the chuck. 69. The method of claim 66, wherein the sensor is a proximity sensor 'which measures the distance between the sensor and the surface of the wafer. 70. The method of claim 66, wherein the sensor is an acoustic sensor. 71. The method of claim 66, wherein the sensor is a vortex flu detector. 7 2. A processing chamber whose purpose is an electropolishing process or a plating process for a semiconductor wafer, including: a chuck assembly for positioning a wafer to face a processing nozzle, which is arranged to dispense a processing liquid To a major surface of the wafer, wherein the chuck assembly is transferred to a first direction relative to the processing nozzle when processing a wafer; and a mask is mechanically connected to the chuck assembly such that the mask and the The chuck assembly is transferred together. 73. The device of claim 72, wherein the mask is magnetically connected to the chuck assembly. 74. The device of claim 72, wherein the chuck assembly is moved to a second direction perpendicular to the first direction to adjust the position where the liquid is distributed on the wafer. 75. The device according to item 72 of the scope of patent application, wherein the chuck assembly positions the main surface of the wafer during the polishing process of an electro-71-(10) (10) 200402821 from the nozzle by 0.5 mm to 10 mm 〇6 6. The device according to the scope of patent application 75, wherein the distance is about 5 mm 0 7 7. The device according to the scope of patent application 72, 'wherein the chuck assembly positions the crystal The main surface of the circle is 0.5 mm to 20 mm from the nozzle. 8. The device according to item 7 of the patent application 'where the distance is about 5 nm. 79. The device according to item 72 of the patent application scope further includes an optical sensor and an end point detector, which are arranged to measure a metal layer on the main surface of the wafer. 80. The device of claim 72, wherein the chuck assembly is magnetically connected to the processing chamber. 8 1. The device according to the scope of patent application No. 80, wherein the chuck assembly can be separated from the processing chamber. 8 2. An electroplating or electropolishing device ' includes: a nozzle for directing a flow of processing liquid ' and an energy source device which is arranged to strengthen the vibration of the processing liquid on a metal film surface. 83. The device according to the scope of patent application item 82, wherein the energy element is magnetically connected to the shower head. 84. The device according to the scope of patent application item 82, wherein the energy element includes at least one of an ultrasonic transducer, a magnasonic transducer, a laser source, an infrared (11) (11) 200402821 line heat source, a microwave source, and a magnetic energy source. . 85. The device according to the scope of patent application item 82, wherein the energy element includes an ultrasonic transducer which operates in the range of 15 KHz to 100 MHz. 86. The device according to item 82 of the patent application, wherein the energy element includes a laser that operates in the range of 1 to 1000 w / cm2, wherein the laser is directed to a metal film on a wafer A surface. 87. The device of the scope of the patent application No. 82 further includes determining the thickness of the metal film by using a laser-excited ultrasonic wave. 88. The device according to item 82 of the patent application, wherein the energy element includes an infrared source that operates in a range of 1 to 100 W / cm2, wherein the infrared source is directed to a metal film on a wafer A surface. 89. The device according to item 82 of the patent application further includes an infrared sensor for measuring the surface temperature of the surface of the metal film. 90. The device according to item 82 of the patent application, wherein the energy element includes a magnetic source which is arranged to concentrate a processing fluid for a current on a wafer metal film. 91. A method of electropolishing or electroplating a metal film on a semiconductor wafer, including the acts of: rotating a wafer chuck that grips a wafer; directing a processing fluid to a wafer surface A metal layer; transferring the wafer for processing liquid flow; and transferring a mask with the wafer, wherein the mask and the wafer are mechanically connected. 73- (12) (12) 200402821 . 92. The method of claim 91, wherein the mask and the wafer chuck are mechanically connected and can be separated. 93. The method of claim 91, wherein the wafer is transferred to a direction parallel to the main surface of the wafer and is rotated at a constant linear velocity. 94. The method according to item 91 of the patent application scope further comprises measuring the reflection of the metal layer by an end point detector and generating data of the thickness of the metal film. 95. The method of item 91 of the patent application scope further includes adjusting the flow rate based on a determined metal film thickness data. 96. The method of item 91 of the patent application, wherein an electropolishing process includes a) determining the desired thickness of a metal film on the wafer, b) removing a portion of the metal film on the wafer, and c) measuring the The thickness of the metal film, and d) If the thickness of the metal film is larger than the desired thickness, repeat b), c) and d) until the desired thickness is measured. 9 7. The method according to item 96 of the patent application scope, wherein the metal film is measured by an end point detector. 98. The method of item 96 of the patent application, wherein the thickness of the metal film is determined by measuring an ultrasonic wave which is generated by guiding a laser to the metal film. 99. As the method of the scope of patent application No. 96, a further package -74- (13) (13) 200402821 includes plating the wafer, if it is determined in c) that the thickness of the metal film is too thin 〇 1 〇〇 The method according to item 91 of the patent application scope, wherein in an electro-polishing process, the rotation speed of the chuck follows a linear movement between the wafer and a nozzle parallel to the main surface of the wafer The distance changes. 1 ο 1 The method according to item 91 of the scope of patent application, wherein in an electropolishing process, the rotation speed of the chuck varies with the flow density of an electropolishing treatment liquid. 102. The method according to item 91 of the patent application, wherein in an electro-polishing process, the rotation speed of the chuck follows the measured metal film thickness data, the desired thickness data, and the wafer The polishing position varies. 1 03. A method according to item 91 of the scope of patent application, wherein the chuck is rotated in a certain linear speed mode. 1 04. The method according to item 91 of the scope of patent application, wherein the chuck is rotated in a certain rotation mode. 1 05. The method according to item 91 of the scope of patent application, wherein the chuck is rotated in a certain centrifugal force mode. 106. An apparatus for electroplating a wafer, comprising: a spray head for distributing a processing liquid, including: an inlet for receiving the processing liquid, a channel combined with the inlet and configured between the inlet and a plurality of holes And a filter element, wherein the filter element including the filter element is configured -75- (14) (14) 200402821 in the channel to disperse the treatment liquid into the inlet through the channel and flow uniformly from most holes . I 07. The device according to the scope of patent application No. 106 further includes a plurality of channels arranged between a plurality of inlets and a plurality of holes and at least one inlet is combined with each channel, and the majority of the filter elements are intended to be distributed The treatment liquid comes through each channel. 108. The device according to item 106 of the patent application, wherein the filter element is configured to face the inlet. 109. The device according to the scope of patent application No. 106, wherein the filter element is a blocking plate configured to face the inlet. II. The device according to item 106 of the patent application, wherein the head is assembled for a 300mm wafer or a 200mm wafer. 1 1 1 · The device according to the scope of patent application No. 106, further comprising an electrode ferrule which is arranged close to the plurality of holes and the surface of the channel. 112. The device according to item 11 of the patent application, wherein the electrode ring comprises an anticorrosive saturated metal or alloy. 113. The device according to the scope of patent application No. 11 further includes a nozzle head having a plurality of nozzle holes positioned on the electric shock ring of the nozzle head. 1 1 4 · The device according to the scope of patent application No. 102, wherein the plurality of nozzle holes is compensation for the plurality of holes. 115. —A method of power semiconductor-semiconductor wafer, including the behavior: receiving the processing liquid through an inlet in a channel, wherein the channel -76- (15) (15) 200402821 includes used to dispense the processing liquid And dispersing the received treatment liquid through the inlet through the passage so as to pass through the majority of the holes uniformly. 116. The method of item 115 of the patent application scope further includes receiving the device configured at the majority of the inlets. A treatment liquid for most of the channels between the plurality of wells and at least one inlet is combined with each channel, and the treatment liquid received through each channel is dispersed. 117. The method according to item 115 of the scope of patent application, wherein the treatment liquid is an electrolytic solution. 1 1 8 The method according to item 115 of the scope of patent application, wherein the treatment liquid is dispersed by a filter element arranged opposite to the inlet. 1 1 9 The method according to item 118 of the scope of patent application, wherein the filter element is a barrier plate. 1 20. The method of item 115 of the scope of patent application, which further includes plating a 300 mm wafer or a 200 mm wafer. 1 2 1 The method according to item 115 of the scope of patent application, further comprising passing the treatment liquid on the electric shock ring after the treatment liquid has been distributed from the plurality of holes. 122. The device of claim 121, wherein the electrode ring comprises a corrosion-resistant metal or alloy. 123. The device according to the scope of patent application No. 121 further includes passing the treatment liquid through a nozzle head including a plurality of nozzle holes, and the nozzle head is positioned above the electric shock ring. 124. As for the device in the scope of patent application No. 123, a further (16) (16) 200402821 includes the installation of branch pipes for the majority of nozzle holes related to the plurality of holes. 125. The device of the scope of patent application item 123, wherein the processing liquid flow is dispersed within a channel by the filter element, flows out uniformly from most holes after the shock ring, and passes through the nozzle hole To the surface of a wafer. 126. An apparatus for flattening a semiconductor wafer in a processing apparatus, comprising: three sensors positioned generally on a plane; and a chuck that is assembled to hold a wafer Facing the three sensors, the three sensors are assembled to measure the distance of the wafer surface from the sensors. 127. The device according to the scope of patent application No. 126, wherein the plane is parallel to a part of the processing device. 128. The device according to the scope of patent application No. 126, wherein the plane is combined with a processing nozzle. 1 29. The device according to item 26 of the patent application, wherein the sensor includes a conductive pin, the pin and a signal line connected to the sensor, and a metal layer on the main surface of the wafer. , And a ground wire connected to the wafer to complete a loop. 13 0. The device according to item 129 of the patent application scope further includes a control system for measuring the offset distance of the wafer based on a signal generated when the loop is completed. 1 3 1. The device according to item 130 of the scope of patent application, wherein the control system adjusts the chuck according to the distance measurement 値. -78- (17) (17) 200402821 1 3 2 · —A method for leveling a wafer in a processing device, including: determining a required calibration plane of a wafer; determining that the position of a wafer is relative The wafer requires three positions of the calibration plane; and the wafer is adjusted according to the determined wafer and the position of the required calibration plane. 13 3. The method of claim 132, wherein the plane is parallel to a part of the processing device. 134. The method of claim 132, wherein the plane is combined with the processing nozzle. 13 5. The method according to item 132 of the patent application, wherein the determined position of the wafer includes a distance measured using three sensors, each having a conductive pin, and the pin is connected to The signal line of the sensor, the metal layer on the main surface of the wafer, and a ground line connected to the metal layer of the wafer complete a loop. 13 6. The method of claim 135, wherein a control system measures the offset distance of the wafer based on a signal generated when the loop is completed. 13 7. The device of claim 136, wherein adjusting the wafer includes moving a chuck that grips the wafer according to the distance measurement frame. -79-