JP2006319348A - Apparatus and method for electropolishing and/or electroplating - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for removing particles in an end effector vacuum cup and preventing acid etc. from entering a vacuum passage in the electropolishing and/or electroplating process in a robot assembly for moving a wafer. <P>SOLUTION: An end effector 306 is linked to a vacuum source via a vacuum valve 322 and to a pressurizing nitrogen source via a nitrogen valve 320. When the vacuum valve 322 is turned on, the pressure inside the vacuum cup 302 is reduced so as to press a waver against the end effector 306 to hold it. When the vacuum valve 322 is turned off and the nitrogen valve 320 is turned on, the pressure inside the vacuum cup 302 is increased and the end effector 306 releases the wafer. When the wafer is not held or moved, in a state in which the nitrogen valve 320 is kept on, a pressure near to the ambient environmental pressure or a pressure higher than the ambient environmental pressure is maintained in the vacuum cup 302. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates generally to semiconductor processing apparatus and methods, and more particularly to electropolishing and / or electroplating apparatus and methods for electropolishing and / or electroplating conductive layers on semiconductor devices.

  Semiconductor devices are manufactured or assembled on a semiconductor wafer using a number of different processing steps to form transistors and interconnect elements. Conductive (eg, metal) trenches, vias, etc. are formed in the dielectric material as part of the semiconductor device to electrically connect the transistor terminals associated with the semiconductor wafer. The trench and via couple electrical signals and power between the transistor, the inner circuit of the semiconductor device, and the circuit outside the semiconductor device.

  In forming this interconnect element, the semiconductor wafer can be subjected to, for example, a masking process, an etching process, and a welding process to form a desired electronic circuit system of the semiconductor device. . In particular, multiple masking and etching steps can be performed to form a trench for interconnection and a pattern of recessed areas in the dielectric layer on the semiconductor wafer serving as vias. Then, a deposition process will be performed to deposit a metal layer on the semiconductor wafer so as to deposit metal both in the trenches and in the vias and on the non-recessed areas of the semiconductor wafer. In order to insulate interconnects such as patterned trenches and vias, the metal deposited on the non-recessed areas of the semiconductor wafer is removed.

  Conventional methods for removing metal films deposited on non-recessed areas of a dielectric layer on a semiconductor wafer include, for example, chemical mechanical polishing (CMP). CMP methods are widely known and are used in the semiconductor industry to polish metal layers in trenches and vias and planarize them to the same height as the non-recessed areas of the dielectric layer to form interconnect lines. ing.

  However, CMP methods can have detrimental effects on the underlying semiconductor structure due to the relatively strong mechanical forces required. For example, if the interconnect shape moves below 0.13 microns, there is a significant difference between the mechanical attributes of conductive materials, such as copper and low-k thin films used in typical damascus manufacturing processes. there is a possibility. For example, the Young's modulus of a low-k dielectric thin film may be less than one tenth of the Young's modulus of copper. Therefore, the relatively strong mechanical forces applied on the dielectric thin film and copper in the CMP process are particularly stress related to semiconductor structures including tearing into thin layers, dents, corrosion, film lift, scratches, etc. May cause defects.

  Therefore, new processing equipment and methods are needed to deposit and polish metal layers. For example, the metal layer may be removed from or deposited on the wafer using an electropolishing or electroplating process. In general, in an electropolishing or electroplating process, a portion of a wafer to be polished or plated is immersed in an electrolyte fluid solution and a charge is applied to the wafer. This condition results in copper being deposited or removed from the wafer depending on the relative charge applied to the wafer.

  One aspect of the invention relates to an exemplary apparatus and method for electropolishing and / or electroplating a conductive thin film on a wafer. This exemplary apparatus processes various processing modules such as cleaning modules, processing modules, alignment modules, and different modules such as robotics, end effectors, liquid delivery systems, etc. Including various devices.

  Another aspect of the present invention includes various devices and processing methods. One exemplary apparatus includes a cleaning module having a wafer edge cleaning assembly for removing metal residues on the beveled or outer portion of the major surface of the wafer. The edge cleaning device includes a nozzle head configured to supply liquid and gas to the main surface of the wafer. This nozzle supplies liquid in a region adjacent to the outer edge of the main surface of the wafer and supplies gas radially inward with respect to where the liquid is supplied. Sending gas to the main surface of the wafer at a location radially inward of where the liquid is supplied will cause the liquid to flow radially inward over the wafer into the metal layer formed on the wafer. Will reduce the chances of reaching.

  The present invention is better understood upon consideration of the detailed description below in conjunction with the accompanying drawings and claims.

  In order to provide a more thorough understanding of the present invention, the following description sets forth various specific details such as specific materials, parameters, etc. However, it should be recognized that this description is not intended to limit the scope of the invention, but instead is presented to allow a better description of the exemplary embodiments.

I. Exemplary Electropolishing and / or Electroplating Assembly A first aspect of the invention includes an exemplary electropolishing and / or electroplating assembly for processing a semiconductor wafer. In one embodiment, an apparatus for processing one or more semiconductor wafers is stacked in a module for storing wafers and two or more vertically stacked for electropolishing or electroplating wafers. A processing module, a cleaning module, and a robot (having an end effector or the like) for moving the wafer can be included. The device may be divided into two or more sections that are characterized by separate frames. Generally, this robot moves a wafer between a module for storing a wafer, a processing module, and a cleaning module in order to perform a desired processing on the wafer. In addition, various other modules and features may be included for processing semiconductor wafers as described below.

  FIG. 1 shows an exploded view of an exemplary electropolishing and / or electroplating assembly 100. In this example, assembly 100 includes a main frame (back end, “BE”) 108 and a front frame (factory interface, “FI”) 132. However, the assembly 100 may be divided into fewer or more sections.

  The BE 108 includes an electrical chassis assembly 102, a cleaning drain / process outlet 104, a cleaning module assembly 106, an AC control assembly 110, a liquid delivery system (LDS) 112, and a gas control system (gas). control system (GCS) 114, process drain 116, pump and surge suppressor 118, cabinet outlet 120, process tank 122, liquid filter 124, liquid confinement tray 126, double confinement area 128, Process module assembly 130.

  FI 132 includes a wafer pre-aligner 134, a front panel 136, a light tower 138, a robot frame assembly 140, a robot controller 142, an emergency machine off ( EMO) button 144, front opening unified pod (FOUP) 146, and fan filter unit 152.

  The assembly 100 may be separated into two sections, FI 132 and BE 108, which means that these two sections are transported separately and that these sections are a single unit in the field. Allowing them to be reassembled. Further, the robot frame assembly 140, which may include a robot assembly 147, a dry end effector 148, a wet end effector 149, and a robot controller 142, for example, during movement or maintenance. For this reason, it is possible to separate from FI 132 and roll out. Accordingly, the assembly 100 may be modularized or divided into various sections to assist in transportation, cleaning, maintenance, and the like.

  As shown in FIG. 1, FOUP 146 may include one or more pods for storing wafers. Dry end effector 148 moves wafer 150 from one of its pods to wafer pre-aligner 134. The wafer pre-aligner 134 aligns the wafer 150 before the wet end effector 149 removes the wafer and moves it to the process module assembly 130. It should be understood that the wafer 150 may be moved between modules by other methods and apparatus.

  The process module assembly 130 can include one or more racks of electropolishing assemblies for polishing wafers or electroplating assemblies 131 for plating wafers. The electropolishing assembly or electroplating assembly 131 may be stacked vertically to reduce the footprint of the process module assembly 130. The cleaning module assembly 106 can include a rack of cleaning chamber modules 107 for cleaning wafers. Similarly, the cleaning chamber modules 107 may be stacked vertically. After the wafer 150 has been processed for electropolishing or electroplating, the wet end effector 149 moves the wafer 150 to the cleaning chamber module 107. The dry end effector 148 removes the wafer 150 from the cleaning chamber 107 and returns the wafer 150 to its pod in the FOUP 146. In general, the “dry” end effector 148 is used when the wafer 150 is removed from the pod in the FOUP 146 and returned to the pod, or removed from the cleaning chamber module 107. A “wet” end effector 149 is typically used to remove the wafer 150 after processing because the wafer 150 may contain residues from the processing. Limiting the removal of processed wafers by wet end effector 149 is the possibility of cross-contamination between dry end effector 148, wet end effector 149, and the wafers they operate and move within assembly 140. Will reduce.

  An exemplary electropolishing assembly that can be used in combination with the assembly 100 is the title “ELECTROPOLISHING ASSEMBLE AND METHODOLED CONDUCTIVE LAYERS” filed on Nov. 13, 2002. PCT patent application number PCT / US02 / 36567, which is incorporated herein in its entirety.

  As shown in FIG. 1, much of the electrical equipment is housed within the BE 108, particularly within the electrical chassis assembly 102 and the AC control assembly 110. LDS 112 and GCS 114 are also located in BE 108.

  The LDS 112 may include supply lines for DI water and various chemicals and / or electrolyte fluids, the chemical liquid and / or the composition of the electrolyte fluids depending on the particular application and assembly. Depending on the processing modules included in 100, it may vary. The GCS 114 may further include various control valves, sensors, and supply lines for controlling and monitoring the delivery of various chemicals and fluids.

  The pump and surge suppressor 118 delivers process liquid from the process tank 122 to the process module assembly 130. A liquid filter 124 may be included in the supply line to filter the process liquid before it reaches the process module assembly 130. After the wafer 150 is processed, the process liquid may be drained into the process tank 122 through the process drain 116. Any gas, such as a potentially harmful gas, from the process module assembly 130 and the cleaning module assembly 106 can be exhausted from the process outlet 104. The cleaning drain / process outlet 104 can also be used to release DI water or gas from the cleaning module assembly 106. A cabinet outlet 120 can be used to release gases that are generally present inside the BE 108. The FI 132 can include a fan filter unit 152 that is used to supply clean air filtered into the FI 132.

  The BE 108 may further include a liquid confinement tray 126 and a double confinement area 128. The liquid confinement tray 126 can be effective in the case of overflow from the process tank 122 or leakage in the supply line. The liquid confinement tray 126 may further include a leak sensor for detecting leaks. The double containment area 128 can accommodate leaks from supply lines that are already isolated by the outer tube material.

  The supply line, pump and surge suppressor 118, liquid filter 124, liquid confinement tray 126, and double confinement area 128 may generally comprise materials that are resistant to acid and corrosion.

  The BE 108, FI 132, and robot frame assembly 140 can be made of stainless steel, preferably 316 grade stainless steel. The robot assembly 147 can be made of aluminum, stainless steel, or the like. If the robot assembly 147 includes aluminum or other materials that are susceptible to corrosion, the surface of the aluminum portion is anodized and coated with Teflon or the like to protect the aluminum portion from corrosion. May be. The cleaning module assembly 106 can be made of stainless steel, plastic, PVC, PVDF, polyurethane, Teflon, etc., preferably 316 grade stainless steel. The GCS 114 and liquid confinement tray 126 can be made of a plastic material, preferably a non-combustible plastic. The process tank 122 can be made of a plastic such as PVC, PVDF, Teflon, etc., preferably PVDF. However, it should be recognized that other suitable materials or coatings for use with BE 108 and / or FI 132 are anticipated.

  An exemplary process for electropolishing or electroplating a semiconductor wafer begins with a pod containing a wafer that is placed in FOUP 146. This pod, or pod door, is opened to allow the robot assembly 147 to reach the pod to pick up the wafer by the end effector 148. The robot assembly 147 and the dry end effector 148 move the wafer 150 to the wafer pre-aligner 134 to align the wafer 150 for processing. After the wafer pre-aligner 134 aligns the wafer 150, the robot assembly 147 uses the wet end effector 149 to pick up the wafer 150 from the wafer pre-aligner 134 and transfer the wafer 150 to the electropolishing or electroplating assembly 131 for processing. Move.

  After the electropolishing or electroplating process is complete, the robot assembly 147 uses the wet end effector 149 to pick up the wafer 150 and move the wafer into the cleaning chamber module 107. After the cleaning process is complete, dry end effector 148 picks up wafer 150 and returns wafer 150 to the pod in FOUP 146 for removal.

  In another exemplary process comprising a plurality of wafers and a plurality of electropolishing or electroplating assemblies, the above-described exemplary process is such that similar steps are performed on the second wafer, the third wafer, etc. It can be performed on the first wafer at the same time.

  Various components of the assembly 100 are described in more detail below. Although this exemplary electropolishing and / or electroplating apparatus has been described with respect to particular embodiments, specific examples, and applications, various modifications and changes may be made without departing from the invention. Will be apparent to those skilled in the art.

II. End Effector Seal In one aspect of a semiconductor assembly, exemplary end effector devices and methods are described. End effectors are commonly used in wafer manufacturing processes, for example, to move a wafer from one processing module to another for further processing, cleaning, storage, and the like. An exemplary end effector according to one embodiment includes a vacuum cup seal to securely hold and move the semiconductor wafer. This exemplary end effector may be included in a semiconductor processing module, and more specifically, may be included in a robot assembly of a semiconductor assembly. This exemplary end effector can allow for a more secure hold of the semiconductor wafer surface and, on the other hand, move the wafer to its destination more accurately and reliably.

  FIG. 2 illustrates an exemplary robot assembly for moving a semiconductor wafer within a processing assembly. The robot assembly includes an exemplary end effector 206 that is coupled to a robot for picking up and moving the wafer 216. End effector 206 creates a vacuum on the lower surface of end effector 206 to secure wafer 216 to end effector 206 for moving the wafer from one module to another. The end effector 206 can place the wafer 216 down by removing the vacuum or increasing the pressure so that gravity overcomes the seal and the wafer 216 is released from the end effector 206, ie, the wafer 216. Can be released. Further, the end effector 206 holds the lower surface of the wafer 216 with a pressure relatively smaller than the environment in order to hold the wafer 216 against the end effector while resisting vibration, acceleration during movement, and the like. May be.

  FIG. 3 illustrates one aspect of the exemplary end effector 306 in more detail. As shown in FIG. 3, the end effector 306 is coupled to a vacuum source that is controlled by a vacuum valve 322 and a pressurized nitrogen source that is controlled by a nitrogen valve 320. When the vacuum valve 322 is turned on, a vacuum source is coupled to the end effector 306 and reduces the pressure in the vacuum cup 302 to hold the wafer 216 against the end effector 306. If the vacuum valve 322 is turned off and the nitrogen valve 320 is turned on, the end effector 306 will release the wafer 216 from the vacuum cup 302 as the pressure is increased in the cup 302.

  It should be understood that absolute vacuum or near absolute vacuum is not required. Rather, a pressure lower than the processing environment sufficient to hold and fix the wafer 216 against gravity, vibration, acceleration during movement, etc. is sufficient. In addition, gases other than nitrogen, such as air, may be used to introduce gas and increase pressure when releasing the wafer.

  By maintaining a pressure close to or higher than the ambient pressure in the vacuum cup 302 to remove particles and / or acid etc. in the vacuum passage in the vacuum cup 302 or end effector 306 To prevent the nitrogen from entering, the nitrogen valve 320 can be left on when the wafer is not being held or moved.

  4A and 4B show a vacuum cup 402, a mushroom cap 404, a groove 405, a cutout portion 408 (to reduce the weight of the end effector), a vacuum passage 412, and (to a robot or the like). FIG. 2 shows a plan view and a cross-sectional view of one exemplary end effector 406 including a screw 416 (for attachment). The end effector 406 can include any suitable material in its structure, such as stainless steel, aluminum, various alloys or metals, ceramics, plastics, and the like.

  As shown in FIG. 3 and FIG. 4A, the vacuum source passes through the vacuum passage 412 and through the hole 414 located on the major side of the end effector 406 near its distal end. Remove. The vacuum passage 412 may be formed integrally with the end effector 406 or may be formed inside the end effector 406 (as shown) or, for example, on the opposite surface of the end effector 406 Above it may be formed by another passage located adjacent to the end effector 406.

  Due to the vacuum or reduced pressure created in the vacuum passage 412, the wafer positioned adjacent to the end effector 406 is pulled or pressed in a compliant manner against the vacuum cup 402, resulting in a wafer A temporary seal is created between the opposing major surface and the vacuum cup 402 of the end effector 406. The vacuum cup 402 may have any suitable shape such as oval, oval, square, and the like. The vacuum cup 402 fits over the edge of the mushroom cap 404 and extends above the surface of the end effector 406. The vacuum cup 402 is an elastomer, silicone rubber, or a generally flexible or flexible material that produces a temporary seal with the wafer without causing damage to the wafer such as scratches or cracks, or Other suitable materials may be included.

  As shown in FIGS. 4A and 4B, a shallow groove 405 crosses the mushroom cap 404 to increase vacuum retention, for example, to prevent the wafer 416 from clogging into the hole 414. Is formed. The groove 405 divides the upper plane of the mushroom cap 404 into two semicircles. The shallow groove 405 is further formed as a cruciform, square, circular, or other suitable shape to improve the suction and vacuum of the end effector 406 and reduce the likelihood of the hole 414 being blocked. May be. The mushroom cap 404 may be made of a material similar to the end effector 406, such as metal or plastic. In one example, the mushroom cap 404 is a distal end of the end effector 406 such that when the wafer is pulled by the vacuum cup 402, the wafer is pulled against the distal end of the end effector 406 and the mushroom cap 404. At the same height (see FIG. 4B).

  FIG. 8 shows a cross-sectional view of a vacuum cup that can be included in an exemplary end effector. As shown in FIG. 8, the vacuum cup generally overlies one end effector surface that may include a bottom portion 818 and a sidewall 820 that is generally inclined at an angle α. It is a cavity that is formed. The angle α may vary from 0 degrees to 180 degrees depending on the particular application, preferably from 5 degrees to 50 degrees, and more preferably about 30 degrees. The side wall 820 will be flexible and will extend to a height H above the surface of the end effector so as to form a seal with the wafer. With further reference to FIGS. 4A, 4B, and 8, the end effector 406 will be positioned such that the wafer 416 contacts the edge of the sidewall 820 when gas is withdrawn from the hole 414 through the vacuum passage 410. Let's go. The vacuum cup 402 will pull and hold the wafer 416 by the vacuum created in the cavity of the vacuum cup 402. The pressure differential will produce a force sufficient to maintain a holding force on the wafer 416 that is greater than the force of gravity on the wafer. To release the wafer 1016 from holding the end effector 406, a gas (eg, nitrogen, etc.) is introduced through the vacuum passage 410 and the hole 414 to increase the pressure in the hole 414 such that gravity exceeds the holding force. Can be done.

  FIG. 5 shows a plan view of another exemplary end effector 506. The end effector 506 shown in FIG. 5 is similar to the end effector of FIGS. 3, 4A, and 4B except that the end effector 506 includes three holes 514 and three vacuum cups 502. It is similar. Hole 514 and vacuum cup 502 may be placed at various locations on end effector 506, depending on the design of end effector 506 and the particular application. Further, the shape of the end effector may include any suitable shape, such as a horseshoe, rectangle, circle, several branched shapes including one or more tips, and the like.

  FIG. 6 shows a plan view of another exemplary end effector 606. The end effector 606 is similar to the end effector of FIGS. 4A and 4B except that the end effector 606 has a plurality of vacuum cups 602. In this example, the end effector 606 is elongated (ie, non-null). It has five vacuum cups 602 each containing a circular (mushroom) cap 604. Further, the end effector 606 has a common vacuum passage located adjacent to the hole 614, as opposed to the case of FIG. 5 that includes a bifurcated and separate vacuum passage for each of the separate holes 514. Including.

  FIG. 7 shows a plan view of another exemplary end effector 706. This end effector 706 is similar to the end effector of FIGS. 3A and 3B, except that one vacuum cup 702 includes a plurality of holes 714 therein. The vacuum cup 702 in this example is formed in a horseshoe shape, but has several elongate mushroom caps 704 that have similar functionality to the vacuum cup 402 and are similar to the mushroom cap 604.

  While exemplary end effector seals have been described with respect to particular embodiments and applications, it will be apparent to those skilled in the art that various modifications and changes may be made without departing from the invention. Let's go. For example, various methods of creating a vacuum in a vacuum cup are envisioned, as are various other shapes and configurations of the vacuum cup and mushroom cap to form a seal as the wafer is picked up and moved.

III. Wafer Cleaning Method and Apparatus In one exemplary aspect of a semiconductor assembly, an exemplary wafer cleaning method and apparatus are described. This exemplary wafer cleaning method and apparatus cleans debris or particles from a wafer prior to an electropolishing or electroplating process and cleans processing fluid from the wafer after an electropolishing or electroplating process step. can do. For example, after the electropolishing process, the edge or outer region (often referred to as the “slope region”) of the major surface of the wafer may contain copper residues. It is desirable to etch away this copper residue from its outer area and clean the wafer without damaging the thin metal layer in the inner area of the wafer. Thus, in one aspect, the cleaning module includes an edge cleaning assembly for removing metal residues on the outer or edge portion of the wafer. The edge cleaning device includes a nozzle head configured to supply liquid and gas to the main surface of the wafer. This nozzle supplies liquid in the edge area and gas at the inner edge of the edge to reduce the possibility of liquid flowing radially inward on the wafer into the metal film To do.

  9A-9C show various views of an exemplary cleaning chamber module for cleaning a wafer. As shown in FIGS. 9A-9C, this exemplary cleaning chamber module includes a dome cover 902, a cleaning chamber window 904, a cylinder cover 906, a leak sensor 908, a drip pan drain line (drip pan drain). a drain line 910, a base block 912, a drip pan clamp 914, a drip pan 916, a bottom chamber 918, and a cutout 920 for chuck motor assembly wiring Two DI water nozzles 922 (back side) and 926 (top), two nitrogen nozzles 924 (back side) and 928 (top), edge cleaning assembly 930, light sensor 932, wafer front side chemical Nozzle 934, chuck 936, drain plate 938, upper chamber 940, drain and drain tube 942, nitrogen line 944, edge cleaning cover 946, nozzle 948 for wafer backside chemicals And a chuck motor assembly 950. In addition to a single nozzle 934 for chemicals, the cleaning chamber module can include one or more nozzles for chemicals.

  A wafer 901 can be placed in the cleaning chamber by an end effector 903 or the like. When it is determined that the wafer 901 is in an acceptable position on the chuck 936 for the cleaning process, the chuck motor assembly 950 rotates the chuck 936 and the wafer 901 about an axis perpendicular to the major surface of the wafer. It is possible. When the chuck 936 and the wafer 901 are rotating at a rotational speed of about 30 rpm, the DI water nozzles 922 and 926 can supply a flow of DI water to the upper and back surfaces of the wafer 901. The DI water can flow through the edge of the wafer 901 toward the cleaning chamber wall, through the drain plate 938, and out into the drain and drain tube 942. To remove the DI water from the wafer 901 and dry it, the chuck motor assembly 950 may increase the rotational speed to 2,000 rpm, ± 1,000 rpm. Next, nitrogen (or other suitable gas) is applied to the top and back surfaces of the wafer 901 for nitrogen nozzles 924 and 928 to further remove DI water from the top and back surfaces of the wafer 901. Can be supplied.

  After the wafer 901 is cleaned and dried, and the chuck motor assembly 950 is stopped, the edge cleaning assembly 930 slides to a position for edge cleaning. 10A-10B show an exemplary wafer edge cleaning assembly 930 that includes a DI water tube 1006, a bar 1010, an adapter bar 1008, a bracket 1012, a screw 1014, and an air table. Air table cylinder 1016, adjustable screw 1018, flow regulator 1020, compressed air tube 1022, bar clamp 1024, acid tube 1026, nitrogen tube 1028, nozzle A head 1030, a rod wiper 1032, a nitrogen nozzle 1034, and a liquid nozzle 1036 may be included. The length of the edge cleaning assembly 930 can be adjusted for use with 200 mm wafers, 300 mm wafers, or other size wafers by adding or removing adapter rods 1008. The gap between the top of the wafer 901 and the nitrogen nozzle 1034 can be in the range of 0.1 mm to 10 mm, and the liquid nozzle 1036 can be located above the edge area 1004. It is.

FIGS. 11A through 11C show a top view, a side view, and a front view, respectively, of an exemplary nozzle head 1030 included with the edge cleaning assembly. As shown in FIGS. 11A-11C, the nitrogen nozzle 1034 creates a nitrogen curtain 1102 of nitrogen near the edge of the wafer 901. In an exemplary edge cleaning process, the wafer 901 may rotate at a rotational speed of about 50-500 rpm, preferably 200 rpm. The liquid nozzle 1036 supplies a chemical flow to form a thin layer about 10 mm wide on the outer major surface or edge area 1004 of the wafer 901. This chemical removes the metal layer or metal residue, but can accidentally spread toward the center of the wafer 901, which can have a detrimental effect on the metal layer. Various chemicals can be used to etch metal residues in the edge area 1004. For example, a concentration of 10% H ₄ SO ₄ and a concentration of 20% H ₂ O ₂ can be used to etch copper metal from the edge area 1004. Furthermore, the chemical solution can be heated in the range of 25 ° C. to 80 ° C. to increase the etching rate.

  In order to reduce the possibility of chemical spreading inward from the edge, the inner edge of edge area 1004 is prevented or at least reduced to prevent the chemical from spreading towards the center of wafer 901. In order to create a nitrogen curtain 1102, a nitrogen nozzle 1034 supplies or delivers a gas flow, such as nitrogen. After the edge area 1004 is cleaned, the liquid nozzle 1036 may supply a liquid jet 1104 of DI water to dilute and / or clean chemicals from the wafer 901 in the edge area 1004. Further, in one embodiment, after the edge cleaning process, additional DI water cleaning is performed by using DI water nozzles 922, 926 to clean the top and back surfaces of the wafer 901. Also good.

  When the edge cleaning process is complete, the chuck motor assembly 950 stops rotating the chuck 936 and the wafer 901, and the edge cleaning assembly 930 can slide back from the edge cleaning position to the rest position. .

  11D-11E show various views of another exemplary nozzle head 1030. FIG. The embodiment of FIGS. 11D-11E is similar to the embodiment of FIGS. 11A-11C, except that the nitrogen nozzle 1034 has a horizontal span 1034h extending from the nozzle. Horizontal span 1034h can create a nitrogen curtain 3002 that more effectively prevents chemicals from edge nozzle 1036 from spreading toward the center of wafer 901. The distance between the horizontal span 1034h and the surface of the wafer 901 is preferably in the range of about 0.1 mm to about 3.0 mm, more preferably about 1.5 mm.

  FIGS. 11F through 11G show various views of another exemplary nozzle head 1030. The example in FIGS. 11F-11G is similar to the example in FIGS. 11D-11E except that the horizontal span 1034h extends from both sides of the lower portion of the nozzle.

  FIG. 11H shows another exemplary nozzle head 1030. The embodiment of FIG. 11H is similar to the embodiment of FIGS. 11A-11C except that it has two liquid nozzles 1036, one for chemicals and the other for DI water. Separate nozzles will provide improved performance during, for example, DI water cleaning.

  FIG. 12 illustrates an exemplary chuck motor assembly 950 that can be included in a wafer cleaning apparatus. In this example, the chuck motor assembly 950 includes a chuck 936, an upper motor plate 1202, an optical sensor 1204, a shaft sleeve 1206, a motor 1208, a flag 1210, a spacer 1212, A centrifuge block shaft 1214, a centrifuge block 1216, and a plug 1218 are included.

  Referring again to FIGS. 9A, 9B, and 10A, in order to place the wafer 901 on the chuck 936, the end effector 903 removes the wafer 901 from the process chamber or pre-aligner (see FIG. 1) and cleans it. For this purpose, the wafer is moved through the cleaning chamber window 904 to the cleaning chamber module. FIG. 13 illustrates an exemplary cleaning chamber window 904 that includes an inner plate 1302, an outer plate 1304, a bracket 1306, a flow controller 1308, a cylinder 1310, a cylinder cover 906, and a limit sensor 1312. Show. End effector 903 loads wafer 901 into chuck 936. The cylinder 1310 can raise the outer plate 1304 and close the cleaning chamber window 904 to initiate the wafer cleaning process.

  As shown in FIG. 12, the exemplary chuck 936 includes a base 1220 and three positioners 1222. The chuck 936 may be modified to fit a 200 mm wafer, a 300 mm wafer, or any other wafer size. When the end effector 903 loads the wafer 901 into the chuck 936, the wafer 901 is positioned in the chuck 936 by the three positioners 1222. Referring again to FIGS. 9A-9C, the optical sensor 932 can detect the position of the wafer 901 within the chuck 936. To check for wafer positioning errors, the optical sensor 932 sends a beam to the upper surface of the wafer 901, as shown in FIG. If the end effector 903 places the wafer on the top surface of the positioner 1222, the beam will not be completely reflected back to the reflective sensor 932. As the chuck 936 rotates, the reflectivity will change accordingly. Further, as the distance between the wafer 901 and the reflection sensor 932 changes, the difference or difference in reflectivity ascertains whether the wafer 901 is accurately placed on the chuck 936 and the three positioners 1222. Can be used for. In one example, when the wafer 901 is accurately positioned on the chuck 936 by the three positioners 1222, the reflectivity is read between about 70% and 75% while the chuck is rotating. However, when the wafer 901 is not accurately positioned, the reflectance is read between about 30% and about 60%. A wafer in the wrong position will come out of the chuck 936 when the chuck 936 is rotated at a high speed, which can cause the wafer 901 to crack inside the cleaning chamber module. There is sex.

  An exemplary light sensor 932 is shown in FIG. 14 and includes a fitting tube 1402, a fitting O-ring 1404, a reflection sensor 1406, a holder 1408, a Viton O-ring ( viton o-ring) 1410 and a holder flange 1412. It should be appreciated that other suitable optical sensors may be used to determine proper positioning of the wafer relative to the chuck 936. In other examples, the optical sensor 932 may be replaced by a non-optical sensor for measuring the surface of the wafer, such as a proximity sensor, eddy current sensor, acoustic sensor, or the like.

  In order to prevent the wafer 901 from rotating out of the chuck 936 due to the action of relatively high centrifugal forces during various cleaning processes such as a drying cycle, the chuck positioner 1222 may include a centrifuge block 1216. . The centrifuge block 1216 can include a lower element (ie, a weight) that is heavier than the upper portion, and the lower portion is proximate to the centrifuge block shaft 1214. When the chuck 936 is rotating at a rotational speed of about 1,000 rpm or higher, the centrifugal force will cause the weight in the centrifugal block 1216 to rotate outward. Accordingly, the upper portion of the centrifuge block 1216 moves inward to fix and hold the wafer 901 on the chuck 936. The weight, length, etc. of the positioner 1222 and the centrifuge block 1216 can be varied to change the speed at which the positioner 1222 moves to secure the wafer. When the chuck motor assembly 950 decelerates or stops, the centrifuge block 1216 will return to its upright position due to reduced or zero centrifugal force. In order to fix the wafer, the chuck rotation speed is set in the range of about 200 rpm to about 3,000 rpm, and preferably 2,000 rpm.

  FIGS. 16A-16C illustrate an exemplary backside wafer cleaning process and wafer in relation to positioner 1222 and wafer backside chemical 948. In the exemplary wafer backside cleaning process, the wafer backside chemistry is such that the motor 1208 can be sent to the backside of the wafer 901 without the wafer backside chemicals splashing and depositing on the three wafer positioners 1222. The chuck 936 is vibrated to face the nozzle for the chemical 948. Chemicals that come into contact with the wafer positioner 1222 may scatter onto the upper surface of the wafer 901 and chemically etch the upper surface, causing defects in the structures and devices formed on the wafer 901. There is a possibility. The backside chemical 948 may be positioned between two positioners 1222 and oscillated between an angle β and an angle −β. The backside chemical directs the backside chemical 948 to an off-center position by moving the backside chemical 948 between the angles -γ and γ, as shown in FIGS. 16A-16C. May cover the area of the wafer 901 beyond the angle β and the angle −β.

  The chemical delivered by the chemical 948 reaches the back side of the wafer 901 and the cleaning time can be in the range of 5 to 100 seconds, preferably 10 seconds. The cleaning process is then repeated for each third of the back side of the wafer 901.

17A-17C illustrate another exemplary backside wafer cleaning process. This process is “off” when the chuck 936 is continuously rotated and the backside chemical 948 is pulsed or timed so that it is “on” between the positioners 1222 and directed to the positioner 1222. Is similar to the process described with reference to FIGS. 16A-16C, except that it is pulsed or timed. Similar to FIGS. 16A-16C, the nozzle backside chemical 948 may oscillate to ± γ during the process. As shown in FIGS. 17B and 17C, as the chuck 936 rotates counterclockwise, the backside chemical 948 delivers liquid to the wafer to an angle a ₁ at which it is turned off. Liquid is again fed at an angle a ₂ on the backside of the wafer.

  In another example, to clean the portion of the backside of the wafer 901 that is in contact with the positioner 1222, the motor 1208 performs a rotational motion at a level of rotational acceleration sufficient to move the wafer 901 from its original position. Will give rise to. Thus, the chemical delivered by the nozzle for the wafer backside chemical 948 can reach the backside portion of the wafer 901 that was in contact with the positioner 1222 prior to the rotational movement. After cleaning the entire surface on the back side of the wafer 901, the DI water nozzle 922 will supply a stream of DI water to clean the chemicals on the back side of the wafer 901.

  Wafer 901 can pass through one final cleaning cycle. When the chuck 936 and the wafer 901 are rotating at a rotational speed of about 30 rpm, the DI water nozzles 922 and 926 can supply a flow of DI water to the upper surface and the back side of the wafer 901 simultaneously. In order to remove the DI water from the wafer 901 and dry the wafer 901, the chuck rotation speed can be increased to 2,000 rpm ± 1,000 rpm. Nitrogen nozzles 924, 928 can then supply a flow of nitrogen to the top and back sides of wafer 901 to remove the DI water film from the top and back sides of wafer 901.

  In view of the above description of exemplary apparatus and methods, an exemplary cleaning method or sequence may proceed as follows.

Start of cleaning a. Return the chuck to the initial position.
b. Open the outer plate 1302.
c. Wafer 901 is placed on chuck 936.
d. Close the outer plate 1302.

Front side cleaning e. The chuck 936 is rotated at a speed of 10-100 rpm, preferably 50 rpm.
f. DI water is sent from the DI water nozzle (upper part) 926 to the front surface of the wafer 901.
g. Stop DI water from DI water nozzle (top) 926 and then increase chuck rotation speed to 1,000-2,000 rpm, preferably 2,000 rpm.
h. In order to dry the upper surface of the wafer 901, nitrogen is delivered from a nitrogen nozzle (upper part) 928.
i. Stop nitrogen flow and stop chuck rotation.

Edge cleaning j. Powering the air tube cylinder 1016 moves the edge cleaning assembly 930 from its rest position to the edge cleaning position.
k. The wafer 901 is rotated at a rotational speed of 100-500 rpm, preferably 350 rpm, and nitrogen is delivered from the nitrogen nozzle 1034 through the nitrogen tube 1028.
l. Edge cleaning chemicals are delivered from the liquid nozzle 1036 through the acid tube 1026.
m. After the metal on edge area 1004 is etched away, the edge cleaning chemical delivery is stopped.
n. DI water is sent from the liquid nozzle 1036 through the DI water pipe 2006.
o. After the chemical on the edge area 1004 has been removed by washing, the DI water flow is stopped.
p. Nitrogen is supplied from a nitrogen nozzle 1034 through a nitrogen tube 1028.
q. The chuck rotation is stopped and the edge cleaning assembly 930 is returned to the rest position.

Backside cleaning r. The chuck 936 is moved to the backside cleaning position, that is, a position where the distance between the nozzle for the wafer backside chemical 948 and the two adjacent positioners 1222 is equal. Motor 1208 begins to oscillate chuck 936 around the nozzle for wafer backside chemical 948. The vibration angle should be less than 45 ° ± 5 °. The nozzle for wafer backside chemical 948 then delivers the chemical to the backside of wafer 901.
s. Repeat step r for the second and third sections of wafer 901. Alternatively, the wafer 901 may be continuously rotated in one direction, and the backside chemical 948 is pumped out to avoid the positioner 1222.

Shift turn cleaning
t. The wafer 901 is moved from its position by using a high acceleration during a quick turn.
u. Repeat step s.
v. Repeat steps s through u for the second third of wafer 901.
w. Repeat steps s through u for the last third of wafer 901.
x. While the wafer 901 is rotating at a rotational speed of about 50 rpm, DI water is sent through the DI water nozzle (back side) 922 to the back side of the wafer 901 and through the DI water nozzle (top) 926 to the front side of the wafer 901. send.
y. Stop DI water delivery. The chuck 936 is rotated at a rotational speed of about 1,000-3,000 rpm, preferably 2,000 rpm, and then nitrogen is delivered to both the front and back sides of the wafer 901.
z. The nitrogen flow delivery is stopped and the chuck 936 is stopped. The cleaning chamber window 904 is opened by lowering the outer plate 1304 with the cylinder 1310. The end effect 903 then picks up the wafer 901 and moves the wafer to a storage pod (not shown).

  The above sequence describes one exemplary method for wafer cleaning, but is not intended to be limiting. In accordance with various other aspects of the present invention, there are various alternative methods for cleaning the wafer 901. For example, the second exemplary method performs steps a through d as described above for initiating the cleaning process, followed by steps j through q for edge cleaning, and DI water. And ending with step i to clean and dry the front side using nitrogen gas.

  Another exemplary method includes steps a through d as described above for initiating the cleaning process, followed by steps j through q for edge cleaning, followed by chemicals. Stages r and s for cleaning the back side, stages e to i for cleaning and drying the front side using DI water and nitrogen gas, and the back side using DI water and nitrogen gas Performing steps t to z for cleaning and drying the substrate. Further, during the backside cleaning process, DI water may be supplied to the top surface of the wafer to protect the top surface from any chemicals used during backside etching. Thus, it should be apparent to those skilled in the art that various processes for cleaning semiconductor wafers using exemplary apparatus and methods are anticipated.

  Although an apparatus and method for cleaning a wafer has been described with respect to particular embodiments, implementations, and applications, it is understood that various changes and modifications can be made without departing from the invention. Will be apparent to those skilled in the art.

IV. Process Chamber Another aspect of the semiconductor assembly includes a processing chamber for electropolishing and / or electroplating semiconductor wafers. This exemplary processing chamber is compatible with electropolishing equipment and electroplating equipment.

  In one exemplary process, the wafer is rotated while the process fluid stream is being delivered to a relatively small portion of the major surface of the wafer. A nozzle or the like that directs the flow of fluid is translated along a linear direction parallel to the main surface of the wafer, for example, from the inner radius to the outer radius of the wafer. In order to increase the uniformity of metal plating or polishing on the wafer, the rotation of the wafer may be varied to produce a constant linear velocity of the wafer surface with respect to the accompanying flow of fluid. In addition, various exemplary methods for determining thin layer profiles and electropolishing or electroplating processes are described.

  FIG. 18 includes an exploded view of an exemplary process chamber assembly according to one embodiment. An exemplary process chamber assembly includes a dynamic shroud 1802, a magnetic coupler 1804, a shaft 1806, a bracket 1808 for mounting the shaft, a splash guard 1810, A tube 1812, a chamber tray 1814, a bottom chamber 1816, a feedthrough 1818 for a light sensor, a plug 1820, a process chamber 1822, a manifold 1824, a nozzle plate 1826, End point detector 1828, nozzle block 1830, side plate 1832, chamber window 1834, half moon And Nba (half moon chamber) 1836, a gate chuck (gate chuck) 1838, can include a window cylinder 1840.

  Exemplary chambers can be equally well used in electropolishing and / or electroplating, but are generally described with respect to an electropolishing process. When using the present invention for electroplating, nozzle block 1830, nozzle plate 1826, manifold 1824, and dynamic shroud 1802 may also be used in the electropolishing process. Alternatively, they may be replaced with a concentric circle electroplating apparatus. An exemplary concentric electroplating apparatus was filed on July 2, 1999, entitled "Method and Apparatus for Electropolishing Metal Interconnects on Semiconductor Devices (METHOD AND APPARATUS FOR ELECTROPOLISHING METAL INTERCONNECTIONS ON SEMICONDUCTOR US)". Patent No. 6,395,152 and the title “METHOD AND APPARATUS FOR ELECTROPOLISHING METAL INTERCONTECTIONS ON SEMICONDUCTOR DEVICES” filed on Feb. 4, 2000, entitled “Method and apparatus for electropolishing metal interconnects on semiconductor devices” As described in US Pat. No. 6,440,295. Both throughout these patents are incorporated by reference herein. In addition, an exemplary electropolishing and electroplating process is disclosed in the PCT patent entitled “ELECTROPOLISHING ASSEMBLE AND METHODS CONDUCTIVELING CONSTRUCTIVE LAYERS” filed on November 13, 2002. Application No. PCT / US02 / 36567 and US Pat. No. 6,391,166 of the title “PLATING APPARATUS AND METHOD” filed on Jan. 15, 1999, and Aug. 7, 1999. Method and apparatus for electropolishing metal interconnects on semiconductor devices (METHOD AND APPARATUS FOR ELECTROPO) LISHING METAL INTERCONTIONS ON SEMICON DUCTOR DEVICES) is described in PCT Patent Application No. PCT / US99 / 15506, all of which are incorporated herein by reference in their entirety.

  In addition, an exemplary endpoint detector and method is disclosed in U.S. Pat. No. 5,093,2002 entitled “Method and Apparatus for Endpoint Detection FOR END-POINT DETECTION” filed on Sep. 10, 2002. No. 6,447,668, which is incorporated herein by reference in its entirety.

  As shown in FIG. 19, a power drive system that can be included in the process chamber assembly includes an x-axis flag 1902, an x-axis drive assembly 1904, a fitting 1906, a motor 1908, and a z-axis mount. Bracket 1910, theta drive belt and pulley 1912, theta y-axis reflective sensor 1914, the x-axis sensor 1916, and theta mount 1918, z-axis universal ball fitting 1920, z-drive table assembly 1922, bracket for z-motion mount for z-motion mount 1924, theta motor 1926, theta drive pulley 1928, chuck assembly 1930, lid back cover assembly 1932, x-axis linear bearing 1934, a y-axis adjusting thumbscrew 1936, a z-axis plate 1938, an upper lid 1940, a z-axis linear bearing 1942, a shaft 1944, an x-axis magnet 1946, a magnetic disconnecting plate 1948, y An axis stage 1950, a magnet 1952, and a bracket 1954 for magnet mounting can be included.

  An exemplary chuck assembly is, for example, entitled “Method and Apparatus for Holding and Positioning a Semiconductor Workpiece During Electropolishing and / or Electroplating of a Semiconductor Workpiece, filed September 7, 1999 (METHOD). AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLOTING OF THE WORKPIECES) dated US Patent No. 6,248,222B And / or method and apparatus for holding and positioning a semiconductor workpiece during electroplating (METHOD AND APPAR) TUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLATING OF THE WORK WORK PIECES) and US Patent No. 09 / 800,990, dated 2001 Method and apparatus for holding and positioning semiconductor workpieces during electroplating (METHOD AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROTHING OF ORCKPIECES) ", U.S. patent application Ser. No. 09 / 856,855, all three of which are incorporated herein by reference in their entirety.

  As shown in FIG. 18, process chamber 1822 may include a dynamic shroud 1802 that translates with chuck assembly 1930 and splash guard 1810 to contain process fluid or electrolyte fluid within the chamber section. It is. The optical sensor cable passes through the feedthrough 1818 for the optical sensor and endpoint detector 1828, or other components such as sensors for detecting leaks in the bottom chamber 1816 or chamber tray 1814. It can be installed. Additional plugs 1820 may be used for further feedthroughs.

  The exemplary apparatus of FIGS. 18 and 19 includes a magnet 1952 for connection to an x-axis drive magnet mount plate 1946. The chuck assembly 1930 can move along the x-direction by sliding on the shaft 1944 via the x-axis linear bearing 1934. The process drive system can be undocked from the process chamber assembly when the exemplary apparatus is not operating, for example, to change a processing apparatus or during maintenance. The motor 1908 will rotate the internal screw in the x-axis drive assembly 1904 counterclockwise to move forward along the x-direction. The same or new process drive assembly may dock with the process chamber assembly in the same manner. An example is a magnet 1952 or magnet if there is an object between the process drive system and the process chamber, or if there is something that prevents the x-axis drive assembly 1904 from moving forward or backward. Safety measures are included so that 1946 is removed from x-axis separation plate 1948. The x-axis drive 1904 and motor 1908 will not be able to move the chuck assembly and top cover further away, at which point the x-axis sensor 1916 will recognize the x-axis detachment from the rest of the process drive system, And the motor 1908 will be powered off.

  During installation or periodic maintenance of this exemplary apparatus, a y-axis adjustment thumbscrew 1936 adjusts the position of the chuck assembly 1930 above the dynamic shroud 1802 and nozzle plate 1826 along the y direction. It is possible.

  Referring to both FIGS. 18 and 19, when this exemplary process chamber is used in a process application, the process drive system couples a magnet 1952 on the process drive system to a magnetic coupler 1804 on the process chamber assembly. Will be docked into the process chamber assembly. Window cylinder 1840 lifts gate chuck 1838 from half-moon chamber 1836 to create an opening in chamber window 1834. A robot (see FIG. 1) can move the wafer 1801 from the pre-aligner (see FIG. 1) through the chamber window 1834. Wafer 1801 is loaded into chuck assembly 1930 for an electropolishing and / or electroplating process.

  In order to move the chuck assembly 1930 from the loading or initial position to a position for electropolishing or electroplating, a motor in the z drive table assembly 1922 is operated between the chuck assembly 1930 and the top of the nozzle block 1830. Rotate the inner shaft assembly of the motor to lower the z-axis plate 1938 from the top of the z-axis linear bearing 1942 until is within the range of about 0.5 mm to about 10 mm, preferably 5 mm. Alternatively, if the exemplary process chamber is used for electroplating, the motor in z-drive table assembly 1922 will have a gap between wafer 1801 on chuck assembly 1930 and the top of the concentric device of about The z-axis plate 1938 can be lowered from the top of the z-axis linear bearing 1942 until it is in the range of 0.5 mm to about 20 mm, preferably 5 mm. After the first metal layer is plated on the wafer 1801, the z-axis plate 1938 can be stepped up according to the process method for the wafer 1801 for additional plating.

  In order to polish wafer 1801, this exemplary process chamber removes copper from plated copper wafer 1801 uniformly and stepwise by applying currents at different current densities to different locations on wafer 1801. Settings for current and process fluid flow may be based on the wafer profile and other user-defined requirements depending on the particular application. Other requirements defined by the user may include the number of large removal runs, the use of larger or smaller nozzles, or the thickness of the copper layer to remain on the wafer. Typically, a wafer measurement metrology tool measures the copper plating thickness profile on a sample of the wafer. This measurement helps to generate a current ratio table that can include the current ratio to be used in the polishing process at a particular set-point on the wafer. The data and the resulting current ratio table give a metal thin film thickness profile, which in turn has a profiled wafer thickness, current density and flow rate during the polishing process. Can be further modified according to the requirements defined by the user to formulate the settings.

  The current density applied to the wafer 1801 may vary depending on the type of removal. For example, a higher current will generally be used to remove the thick metal film on the wafer 1801. To remove thin metal films, smaller currents will generally be used to allow for a more controlled and more accurate removal process.

  An exemplary process or method for electropolishing a wafer that includes a relatively thick metal layer will now be described. This exemplary method generally includes four or more processing steps. First, most of the thick layer of metal, such as copper, is removed. Second, the endpoint detector 1828 measures the reflectivity of the remaining copper layer at a particular location on the wafer 1801 to determine a set point for further polishing. This process recalculates the thin film thickness profile based on its reflectivity reading. Third, this process removes a relatively thin layer of copper according to the new metal film thickness profile. Fourth, endpoint detector 1828 measures the reflectivity of the copper layer to determine if wafer 1801 has been polished to the desired thickness and / or profile. The third and fourth processes can be repeated until the wafer 1801 is polished to the desired thickness and / or profile.

However, if the endpoint detector 1828 determines that an excessive amount of copper plating has been removed from the wafer 1801, for example, during the initial removal process, the present invention may determine that a particular area on the surface of the wafer is copper. It should be understood that it may include an electroplating process that is re-plated with. This electroplating process can include a method of reversing the voltage for the nozzles in the nozzle block 1830 using a suitable electrolyte fluid such as CuSO ₄ + H ₄ SO ₄ + H ₂ O or the like. is there. Exemplary electroplating apparatus and methods are described in the aforementioned US Pat. No. 6,391,166, incorporated herein.

Exemplary Process Method Stage 1
To remove the copper layer on the wafer 1801, theta motor 1926 rotates the chuck assembly 1930 at a constant linear velocity as the chuck assembly 1930 moves along the x direction. The nozzles in the nozzle block 1830 can send process liquid to the wafer 1801 at a constant flow rate. The rotation speed of the data motor 1926 can be related to the current density and the linear travel distance of the rotating chuck assembly 1930. The current ratio applied to the wafer 1801 can also be based on the metal film thickness profile and user-defined requirements. This exemplary method may continuously extrapolate the new current density between each data point on the linear stroke of the rotating chuck assembly 1930 and the new linear velocity at these data points. Is possible. This method can also be recalculated using the new current ratio and linear velocity. The process drive system returns the chuck assembly 1930 to the starting position along the x direction.
Stage 2
Endpoint detector 1828 reflects the reflectivity of the copper plated surface of wafer 1801 when theta motor 1926 rotates the chuck assembly 1930 again at a constant linear velocity as the chuck assembly 1930 moves back and forth along the x direction. Measure. This example records the reflectivity of the wafer 1801 and the corresponding linear distance of the chuck assembly at time intervals defined by the user. This example extrapolates the new data into the form of a portion of a metal film profile.
Stage 3
Step 1 is repeated except that the current is adjusted based on the reflectivity of the endpoint detector 1828 to the wafer 1801 at a particular wafer position at a linear distance. Smaller nozzles in the nozzle block 1830 can be used to achieve a more controlled polishing of the copper plated surface.
Stage 4
Repeat step 2. If the new reflectance measurement from endpoint detector 1828 is greater than the preset value, step 3 is repeated.

  During the exemplary polishing process, the chuck assembly 1930 may be rotated in three modes:

前式中で、Ｒはノズルとウェーハ中心との間の水平距離であり、
Ｃ₁は定数であり、

1) Constant linear velocity mode

Where R is the horizontal distance between the nozzle and the wafer center,
C ₁ is a constant,

前式中で、Ｃ₂は特定の装置および用途による定数セットである。 In actual control, R = 0 gives an infinite rotation speed. Thus, equation (1) can be expressed as:

Where C ₂ is a constant set depending on the particular device and application.

前式中で、Ｃ₃はプロセス方法によって設定される定数セットである。 2) Constant rotation speed mode

In the above equation, C ₃ is a constant set set by the process method.

前式中で、Ｖは線速度であり、Ｒはノズルとウェーハ中心との間の水平距離であり、および、Ｃ₄は特定の装置と用途に応じた定数セットである。 3) Constant centrifugal force mode

Where V is the linear velocity, R is the horizontal distance between the nozzle and the wafer center, and C ₄ is a set of constants depending on the particular equipment and application.

前式中で、Ｃ₅は特定の装置と用途に応じた定数セットである。

In the above equation, C ₅ is a constant set according to the specific device and application.

前式中で、Ｃ₇は特定の装置と用途に応じた定数セットである。 The horizontal or x-direction movement of the chuck can be described as

In the above formula, C ₇ is a constant set according to the specific device and application.

  FIGS. 18 and 19 illustrate a process drive system in which the chuck assembly 1930 moves along the x-direction, but during the process, the nozzle plate 1826 or both the chuck assembly 1930 and the nozzle plate 1826 can be used for specific applications. It must be recognized that it is possible to move in the x direction accordingly.

  FIG. 20 illustrates an exemplary nozzle 2054 that may be included in an exemplary process chamber assembly. The exemplary nozzle 2054 includes an augmented energy unit 2080 that can be attached to or mechanically coupled to the nozzle 2054. This enhanced energy unit 2080 can enhance the agitation of the electrolyte fluid 2081 on the surface of the metal film 2004 to achieve higher polishing rates and better surface finish and quality.

In one exemplary nozzle 2054, the energy augmenting energy unit 2080 includes an ultrasonic transducer or a magnasonic transducer. Electrolyte fluid 2081 may be introduced from the side inlet 5200 of the nozzle 2054. The frequency of the ultrasonic transducer may be in the range of 15 KHz to 100 MHz for stirring the fluid. Ultrasonic transducers can be made of ferroelectric ceramics such as barium titanate (LiTaO ₃ ), lead titanate, lead zirconate, and the like. The output of the ultrasonic transducer may be in the range of 0.01 W / cm ² to 1 W / cm ² .

In another example, the energy enhancing energy unit 2080 may include a laser. For purposes similar to those described above, a laser can be irradiated onto the metal surface during the electropolishing process. This laser is, for example, a solid laser such as a ruby laser, an Nd-glass laser, or an Nd: YAG (yttrium, aluminum, garnet, Y ₃ Al ₅ O ₁₂ ) laser, or a He—Ne laser, a CO 2 laser, or an HF. It may be a gas laser such as a laser. The average power of this laser may be in the range of 1 W / cm ² to 100 W / cm ² . In another example, the laser can be operated in a pulsed mode. The output of this pulse mode laser can be significantly higher than the average mode output, as will be appreciated by those skilled in the art.

  This laser can further detect the thickness of the metal thin film on the wafer 1004. In this example, a laser sent to the metal thin film generates ultrasonic waves on the metal thin film. The thickness of the metal thin film 2004 can be measured by ultrasonic waves detected during the electropolishing process. The thickness of the metal film 2004 may be used to control the polishing rate by changing the current, radial nozzle speed, and the like.

In another example, the energy enhancing energy unit 2080 may include an infrared light source for annealing the metal thin film 2004 during the polishing process. This infrared light source can provide an additional option for controlling the surface temperature of the metal film during polishing. The output of the infrared light source may be in the range of 1 w / cm ² to 100 w / cm ² . Infrared light sources may also be used to anneal the metal film during the polishing process. Grain size and structure are very important to determine the electron transfer performance and resistivity of copper interconnects. In addition, since temperature is a factor in determining the particle size and structure of the metal layer, an infrared sensor can also be used to detect the surface temperature of the metal film during the polishing process.

  The infrared sensor can also be used to measure the temperature of the metal thin film 2004. Monitoring this temperature allows the temperature to be adjusted during the polishing process, such as by changing the infrared light source output or current density.

  In another embodiment, the energy enhancing energy unit 2080 may include a magnetic field for focusing the polishing current on the metal thin film 2004 during the polishing process. Focusing the polishing current allows for increased control of the polishing rate profile of the nozzle, which is increasingly important for relatively large diameter nozzles. This magnetic field may be generated in the direction of the electrolyte flow, that is, in the direction perpendicular to the surface of the metal thin film. Magnets and electromagnets, superconductor coil drive magnets, etc. can be used to generate and focus this magnetic field.

  It is recognized that other energy sources such as ultraviolet sources, x-ray sources, microwave sources, etc. can also be used to improve the performance of the electropolishing process, as generally described above. There must be.

  While exemplary chamber modules and processes have been described with respect to particular embodiments, examples, and applications, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the invention. right.

V. Electroplating Apparatus and Method In another aspect of a semiconductor assembly, an electroplating apparatus and method is included for electroplating a semiconductor wafer. In plating equipment and processes, it is generally desirable to distribute the process fluid uniformly across the surface of the wafer in order to plate a thin metal film of uniform thickness. One exemplary process includes a filter block that prevents direct flow of the electrolyte fluid and distributes the process fluid more evenly through the flow path of the showerhead before it exits the showerhead. A showerhead for a plating apparatus is described. Distributing the process fluid more uniformly through the flow path results in a uniform or near uniform flow rate of electrolyte fluid from each orifice of the showerhead assembly to increase the uniformity of the plating process.

  FIG. 21 shows an exploded view of an exemplary electroplating apparatus for plating a semiconductor wafer 2102. The electroplating apparatus includes a half moon chamber 2104, a stationary shroud 106, a plating showerhead assembly 2108, an outlet 2110, a liquid inlet 2112, an electrolyte fit through 2114, and a liquid fitthrough 2116. , Chamber tray 2118, bottom chamber window 2120, bottom chamber 2122, process chamber 2124, chamber window 2126, top lid assembly 2130, liquid inlet tubing 2132, electrode cable 2134, and shaft 2136. It is possible. The top lid assembly 2130 can be functionally similar to the example top lid assembly described above under the heading “Process Chamber”. A stationary shroud 2106 covers over a wafer chuck (not shown), for example, to prevent electrolyte from popping out of the chamber during electroplating and spin drying processes.

  As shown in FIG. 21, the wafer 2102 is loaded into the electroplating apparatus through the half moon chamber 2104 to the wafer chuck of the top lid assembly 2130. To plate copper on the wafer 2102, the top lid assembly 2130 will lower the wafer 2102 and position the wafer above the top of the plating showerhead assembly 2108. In one exemplary plating process, the first metal layer portion when the gap between the wafer 2102 and the plating showerhead assembly 2108 is in the range of about 0.1 mm to about 10 mm, and preferably about 2 mm. Welding is performed. The top lid assembly 2130 raises the wafer 2102 by an additional 2 mm to 5 mm, and a second layer deposition can be performed in which a thicker copper layer is deposited on the wafer.

  An exemplary electroplating process and sequence is described in US Pat. No. 6,391,166 of the title “PLATING APPARATUS AND METHOD” filed Jan. 15, 1999 and April 18, 2001. US patent application Ser. No. 09 / 837,902, entitled “PLATING APPARATUS AND METHOD”, filed on April 18, 2001, and the title “PLATING APPARATUS AND” filed on April 18, 2001. (METHOD) ", U.S. patent application Ser. No. 09 / 837,911, the entire contents of which are incorporated herein by reference.

  FIG. 22 shows an exploded view of an exemplary showerhead assembly 2108 for the plating process. The showerhead assembly 2108 may include an outer flow path ring 2202, a showerhead head 2204, and a showerhead 2206. 23 and 24 show exploded views of exemplary showerheads configured to electroplate 300 mm wafers and 200 mm wafers, respectively. For use with a 200 mm wafer, simply replace the 300 mm outer channel ring 2302 with the 200 mm outer channel ring 2402 and replace the 300 mm showerhead head 2304 with the 200 mm showerhead head 2404. Thus, the showerhead 2006 can be used for both 300 mm and 200 mm wafers. Referring to FIG. 24, as the wafer size is reduced from 300 mm to 200 mm, the showerhead head 2404 will include fewer rings and the outer channel ring 2402 will have a smaller diameter. However, it should be recognized that this exemplary showerhead can be configured for any size wafer.

FIG. 25A shows an exploded view of an exemplary showerhead. As shown in FIG. 25A, the showerhead 2206 includes an electrode ring 2502, a nut 2504, an electrode connector 2506, an electrode outer connector 2508, a small inlet flare fitting 2510, and an inlet flare. Fitting (inlet flare fitting) 2512 and plating filter block (plate filter)
block) 2514, showerhead base 2516, filter spacer 2518, and plate filter ring 2520. Each electrode ring 2502 is fitted to the top of the matching plating filtering 2520 and the showerhead base 2516 by clamping the electrodes of the electrode ring 2502 with nuts 2504, electrode connectors 2506, and electrode outer connectors 2508. It is fixed at a predetermined position above. Each electrode is attached to an electrode outer connector 2508 by an electrode cable 2134 as shown in FIG. The electrode ring 2502 can be made of an anticorrosive metal or alloy, such as platinum, platinum coated titanium, or the like. The showerhead base 2516 will have a flow path for electrolyte flow from the inlet flare fitting 2512 and the small inlet flare fitting 2510.

  As can further be seen in FIG. 25A, the inlet flare fitting 2512 can be larger than the width of the flow path in the showerhead base 2516, and the inlet flare fitting can be for all 7 or 10 rings. It is impossible to tighten and fix in the same position. In order to clamp and secure the inlet flare fitting to the showerhead base 2516 and to distribute the tension and weight evenly across the electrode ring, every other small inlet flare fitting 2510 or inlet flare fitting 2512 and the opposing filter Block 2514 is placed on the opposite half of the circle (not shown for filter block 2514). Similar to the inlet flare joint 2512, the electrode ring 2512 fits over the plating filtering 2520 such that its electrode is placed on the other half of the circle with every other electrode ring.

  FIG. 25B shows an exploded view of a plating filter 2520 and a plating filter block 2514 joined together by a filter spacer 2518 to form a liquid flow block assembly, with an electrode ring 2502 fitted over the liquid flow block assembly. Are combined. This exemplary liquid flow block assembly would be positioned below and in the center of each plated filter block 2514 with an O-ring 2530 (not shown) and above the showerhead base 2516 with an inlet flare joint 2512. Each plating filtering 2520 has an orifice 2522 with a narrow hole in the center of each orifice. Referring to both FIG. 25A and FIG. 25B, since the liquid flow block assembly and electrode ring 2502 are clamped to the showerhead base 2516, a flow path is formed between the plating filtering 2520 and the bottom of the showerhead base. The Electrolyte fluid flows from the inlet flare joint 2512. The electrolyte flow will first impinge on the center of the plating filter block 2514 above the inlet and be distributed throughout the flow path. As the electrolyte fluid rises up the flow path, the electrolyte will flow uniformly out of the orifice 2522 and reach the electrode ring 2502. The electrolyte fluid passes through the electrode ring 2502 and flows uniformly through the holes 2524 in the nozzle head 2004 to the surface of the wafer 2102.

  FIG. 25C shows the relationship between the orifice 2522 and the nozzle head hole 2524 on the bottom of the showerhead 2006. As shown in FIGS. 25C and 22, the showerhead head 2004 is overlaid on the showerhead 2006 such that the hole 2524 is located between the two orifices 2522. This staggered arrangement allows the electrolyte flow described above to flow more uniformly through each recess on the liquid block flow assembly. As shown in the plan view of the showerhead in FIG. 25D, the holes 2524 are located around the outer ring on the showerhead head 2204 (or 2304 or 2404). These holes 2524 may also be formed in any shape, such as circular, elongated, etc., depending on the specific application, even inside the enclosing ring on the showerhead head 2204. Referring to FIG. 24, the hole 2524 may be formed in an elongated circular shape that is created by forming three round holes.

  Without the plated filter block 2514, the inlet flare fitting 2512 may deliver electrolyte directly through one or more holes above the inlet flare joint, which is the electrolyte flow across the entire flow path. Causes an unbalanced dispersion. Since the electrolyte flows from one inlet, it may be difficult to control the fluid pressure of the electrolyte. By using a liquid flow block assembly, the exemplary filter block 2514 prevents direct flow of electrolyte and disperses the electrolyte throughout the flow path, so this exemplary apparatus is for the deposition of metals such as copper. More appropriate control of the electrolyte can be realized. Dispersing the electrolyte throughout the flow path allows equal or approximately equal volumes of electrolyte to flow out of each orifice 2522 on the plating filter 2520. As shown in FIG. 25E, the electrolyte exits the electrode outer connector 2508 and passes through the showerhead base 2516 and the plating filtering 2520 and then around the sides of the electrode ring 2502 to provide the showerhead. It flows out of the hole 2524 on the head 2004.

  While this exemplary showerhead device has been described with respect to particular embodiments, examples, and applications, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the invention. Will be obvious.

VI. Method and apparatus for leveling a wafer In another aspect, a method and apparatus for leveling a semiconductor wafer relative to a processing module such as an electropolishing or electroplating apparatus. In general, while processing a wafer, it is desirable to level the wafer so that the major surface of the wafer is generally parallel to the horizontal surface of the processing chamber or tool. For example, aligning the wafer within the processing equipment increases the uniformity of the polishing or plating process.

  FIGS. 26A and 26B show an exemplary leveling tool 2604 that can be used to measure the parallelism of the wafer 2602 within a range of ± 0.001 inches for a processing apparatus such as a processing chamber. As shown in FIGS. 26A and 26B, the leveling device generally includes a leveling tool 2604, a ground line 2610, a signal line 1612, a control system 2614, and a chuck 2616.

  An exemplary chuck filed on Sep. 7, 1999 entitled "Method and Apparatus for Holding and Positioning a Semiconductor Workpiece During Electropolishing and / or Electroplating of a Semiconductor Workpiece (METHOD AND APPARATUS FOR). HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLATING OF THE WORKPIECES) and US Patent No. 6,248,222 B1 dated March 7, 2001 Method and apparatus for holding and positioning a semiconductor workpiece during electroplating (METHOD AND APPARATUS FOR H OLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLATING OF THE WORKPIECES), which is incorporated by reference in its entirety, and is incorporated herein by reference. .

  Referring to FIGS. 26A and 26B, the chuck 2616 holds the wafer 2602 during a semiconductor electropolishing or electroplating process. In order to achieve a more uniform process of electropolishing and / or electroplating process, the wafer 2602 is placed parallel or generally parallel to the processing chamber 2630 and, in particular, a plating head or polishing nozzle of the processing apparatus. (Not shown) and parallel or generally parallel. A leveling tool 2604 may be placed in the process chamber 2630 to achieve improved alignment of the wafer 2602.

  Leveling tool 2604 will include three sensors 2606 and corresponding signal lines 2612. When the leveling tool 2604 is placed under the chuck 2626 and the wafer 2602 is lowered to the leveling tool 2604, a signal line 2612 is formed on the surface of the wafer 2602 (via the sensor 2606). Through the connection to the control system 2614. A ground line 2610 from the control system 2614 is connected to the metal layer of the wafer 2602. When sensor 2606 contacts its thin metal layer, a circuit that can be measured by control system 2614 is completed between sensor 2606 and ground line 2610.

  In addition, as shown in FIG. 26B, the leveling tool 2604 includes a support 2608 for use to measure the parallelism of the wafer 2602 within the chuck 2616, a polishing nozzle, and the wafer 2602. A leveling tool 2604 can be positioned near the surface.

  FIG. 26C shows a cross-sectional view of an exemplary sensor 2606. Sensor 2606 can include a holder 2626, a set screw 2618, a pin adjustment 2620, a contact screw 2622, and a pin 2624. The signal line 2602 is connected to the sensor 2606 via the contact screw 2622. The holder 2626, pin adjustment 2620, and pin 2624 can be made of a metal or alloy such as stainless steel, titanium, tantalum, or gold.

  In one exemplary process for measuring the alignment or parallelism of the wafer 2602 with respect to the process tool, the chuck 2616 is leveling tool 2604 until the pin 2624 of one sensor 2606 contacts the conductive surface of the wafer 2602. Descent toward This contact completes the electrical circuit including signal line 2612, ground line 2610, and control system 2614 and provides a signal to control system 2614. The control system 2614 measures the distance from the initial (initial) position of the chuck 2616 to the pin position at the moment of contact.

  The chuck 2616 continues to descend until the second sensor 2606 and the third sensor 2606 contact the surface of the wafer 2602. Corresponding distances for both sensor contacts are obtained and the measurement process ends.

  As shown in FIG. 27, this exemplary process may include a software interface that displays the measured distance at the moment of contact for each sensor 2606. This interface can also display the position of sensor 2606. The smaller the difference between the maximum and minimum measured distances, the closer the wafer 2602 is aligned or in parallel. This data can be used to adjust the chuck 2616 and thus the position of the wafer 2602. After this adjustment is made, this measurement is performed until the difference between the maximum and minimum measurement distances is within design specifications such as ± 0.001 inch for the specific application. The cycle can be repeated.

  Although this exemplary wafer alignment method and system has been described with respect to particular embodiments, examples, and applications, it should be understood that various changes and modifications may be made without departing from the scope of the present invention. Will be apparent to those skilled in the art.

  The above detailed descriptions of various apparatus, methods, and systems are provided to illustrate exemplary embodiments and are not intended to be limiting. It will be apparent to those skilled in the art that various modifications and variations can be made within the scope of the present invention. For example, different exemplary electropolishing and electroplating devices such as cleaning chambers, light sensors, liquid delivery systems, endpoint detectors, etc. may be used in combination in a single process assembly or electropolishing. And / or may be used separately to enhance the electroplating system and method. Accordingly, the invention is defined by the appended claims and should not be limited by the description herein.

FIG. 1 illustrates an exemplary semiconductor processing assembly that can be used for electropolishing and / or electroplating a semiconductor wafer. FIG. 2 shows a robot including an exemplary end effector for moving a semiconductor wafer. FIG. 3 shows a plan view of an exemplary end effector. FIG. 4A shows a plan view of an exemplary end effector. FIG. 4B shows a cross-sectional view of an exemplary end effector. FIG. 5 shows a plan view of an exemplary end effector. FIG. 6 shows a plan view of an exemplary end effector. FIG. 7 shows a plan view of an exemplary end effector. FIG. 8 shows a side view of an exemplary vacuum cup. FIG. 9A shows an exemplary cleaning chamber module having a dome cover. FIG. 9B shows a partial internal view of the cleaning chamber module. FIG. 9C shows an exploded view of the cleaning chamber module with a detailed view of the cleaning nozzle. FIG. 10A shows a top view of an exemplary edge cleaning assembly. FIG. 10B shows a side view of an exemplary edge cleaning assembly. FIG. 11A shows a diagram of an exemplary nozzle head included as part of a bevel cleaning assembly. FIG. 11B shows a diagram of an exemplary nozzle head included as part of a bevel cleaning assembly. FIG. 11C shows a diagram of an exemplary nozzle head included as part of a bevel cleaning assembly. FIG. 11D shows a diagram of an exemplary nozzle head included as part of a bevel cleaning assembly. FIG. 11E shows a diagram of an exemplary nozzle head included as part of a bevel cleaning assembly. FIG. 11F shows a diagram of an exemplary nozzle head included as part of a bevel cleaning assembly. FIG. 11G shows a diagram of an exemplary nozzle head included as part of a bevel cleaning assembly. FIG. 11H shows a diagram of an exemplary nozzle head included as part of a bevel cleaning assembly. FIG. 12 shows an exploded view of an exemplary chuck motor assembly included as part of a cleaning chamber module. FIG. 13 shows an exploded view of the cleaning chamber window contained within the cleaning chamber module. FIG. 14 shows an exploded view of an exemplary photosensor included in the cleaning chamber module. FIG. 15 illustrates an exemplary method for determining proper placement of a wafer within a chuck. FIG. 16A illustrates an exemplary wafer cleaning process. FIG. 16B illustrates an exemplary wafer cleaning process. FIG. 16C illustrates an exemplary wafer cleaning process. FIG. 17A illustrates an exemplary wafer cleaning process. FIG. 17B illustrates an exemplary wafer cleaning process. FIG. 17C illustrates an exemplary wafer cleaning process. FIG. 18 shows an exploded view of an exemplary process chamber assembly. FIG. 19 shows an exploded view of an exemplary process drive system that can be included in the process chamber assembly shown in FIG. FIG. 20 shows an exemplary nozzle having an energy enhancing element. FIG. 21 shows an exploded view of an exemplary electroplating apparatus. FIG. 22 shows an exploded view of the exemplary plating showerhead assembly shown in FIG. FIG. 23 shows an exploded view of an exemplary plating showerhead for a 300 mm wafer. FIG. 24 shows an exploded view of an exemplary plating showerhead for a 200 mm wafer. FIG. 25A shows a view of the showerhead shown in FIGS. 22-24. FIG. 25B shows a view of the showerhead shown in FIGS. 22-24. FIG. 25C shows a view of the showerhead shown in FIGS. 22-24. FIG. 25D shows a view of the showerhead shown in FIGS. 22-24. FIG. 25E shows a view of the showerhead shown in FIGS. 22-24. FIG. 26A shows a top view of an exemplary leveling tool and wafer chuck. FIG. 26B shows a cross-sectional view of an exemplary leveling tool and wafer chuck. FIG. 26C shows a cross-sectional view of the exemplary sensor shown in FIGS. 26A and 26B. FIG. 27 shows an exemplary view of a software panel for a leveling tool.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Assembly 102 Electric chassis assembly 106 Cleaning module assembly 108 Main frame 111 AC control assembly 112 Liquid delivery system 114 Gas control system 132 Front frame

Claims (123)

An apparatus for holding a semiconductor wafer,
A hole located on one side of the end effector member;
A passage connected to the hole for discharging gas from the hole;
An apparatus comprising a cup disposed around the hole configured to form a temporary seal between the end effector and the semiconductor wafer when gas is exhausted from the hole.   The apparatus of claim 1, further comprising a cap having a groove formed therein, and wherein the cap is disposed over the hole.   The apparatus of claim 2, wherein the cap is circular.   The apparatus of claim 1, further comprising two or more holes connected to the vacuum passage.   The apparatus of claim 1, further comprising two or more holes connected to the vacuum passage and in a single cup.   The apparatus of claim 1, wherein the cup comprises a flexible material.   The apparatus of claim 1, wherein the cup comprises an elastomeric material.   The apparatus of claim 1, wherein the cup extends away from a surface of the end effector member.   The apparatus according to claim 1, wherein the cup is formed in a circular shape.   The apparatus according to claim 1, wherein the cup is formed in an oval shape.   The apparatus of claim 1, wherein the cup is formed in a horseshoe shape.   The apparatus of claim 1, wherein the end effector is mechanically coupled to the robot and the cup is disposed at a distal end of the end effector.   The apparatus of claim 1, wherein the distal end of the end effector is formed in a horseshoe shape.   The apparatus according to claim 1, wherein the vacuum passage is formed integrally with a body of the end effector.   The apparatus of claim 1, wherein the vacuum passage is connected to a vacuum source.   The apparatus of claim 15, wherein the vacuum passage is further connected to a gas supply for feeding gas into the vacuum passage. A method for holding a semiconductor wafer comprising:
Placing an end effector near the main surface of the wafer;
Evacuating a flexible cup disposed on the main surface of the end effector opposite the main surface of the wafer;
Creating a temporary seal between the vacuum cup and the wafer.   The method of claim 17, wherein the flexible cup is adjacent to an upper major surface of the wafer and is evacuated sufficiently to hold the wafer against gravity.   The method of claim 17, wherein the flexible cup is adjacent to a lower major surface of the wafer and evacuated to a lower pressure than the ambient environment.   The method of claim 17, wherein the flexible cup has a circular shape.   The method of claim 17, further comprising pumping a gas into the flexible cup to release the wafer.   The method of claim 17, wherein the flexible cup is evacuated through a hole formed in the cavity.   The method of claim 17, wherein the flexible cup includes a cap disposed over the hole, and the cap has a groove formed therein. An apparatus for cleaning a semiconductor wafer,
A wafer edge cleaning assembly including a nozzle head configured to supply liquid and gas to the major surface of the wafer;
The liquid is supplied near an outer edge of the main surface of the wafer;
The apparatus in which the gas is supplied radially inward of the place where the liquid is supplied.   The apparatus according to claim 24, wherein the gas and the liquid are supplied from adjacent nozzles.   25. The apparatus of claim 24, wherein the gas is nitrogen gas and the liquid includes a metal etching chemical.   25. The apparatus of claim 24, wherein the nozzle is configured to supply the gas to prevent the liquid from diffusing radially inward on the major surface of the wafer.   25. The apparatus of claim 24, wherein the nozzle is configured to supply the gas in the form of a gas curtain to prevent the liquid from crossing the gas.   25. The nozzle of claim 24, wherein the nozzle includes a horizontal span parallel to the major surface of the wafer to create a gas barrier between the horizontal span of the nozzle and the opposing major surface of the wafer. apparatus.   30. The apparatus of claim 29, wherein the distance between the horizontal span and the major surface of the wafer is from about 0.1 mm to about 2.0 mm.   30. The apparatus of claim 29, wherein the distance between the horizontal span and the major surface of the wafer is about 1.5 mm.   25. The apparatus of claim 24, further comprising a chuck that rotates the wafer adjacent to the nozzle.   The apparatus of claim 32, wherein the chuck assembly includes a positioner configured to secure the wafer as the chuck rotates.   The positioner includes a first portion and a second portion that are mechanically coupled to each other, and the first portion moves outwardly during rotation and the first portion and 34. The apparatus of claim 33, having a greater mass than the second portion, such that the second portion moves inward to secure the wafer.   35. The apparatus of claim 34, wherein the positioner includes a rotational axis, and wherein the first portion is located below the rotational axis and the second portion is located above the rotational axis. . A method for cleaning a semiconductor wafer comprising:
An edge cleaning process comprising rotating the wafer about a central axis and directing fluid to the major surface of the wafer;
Delivering a gas to the major surface of the wafer located adjacent to and radially inward of the location to which the etch chemistry is delivered.   37. The method of claim 36, wherein the gas reduces the likelihood of fluid flowing radially inward over the semiconductor wafer.   37. The method of claim 36, wherein the gas and the liquid are supplied simultaneously.   37. The method of claim 36, wherein the gas is delivered to the wafer before and during the process of delivering the fluid to the wafer.   37. The method of claim 36, wherein the gas is delivered to the wafer during and after the process of delivering the fluid to the wafer.   37. The method of claim 36, wherein the gas comprises nitrogen gas and the liquid comprises a metal etch chemistry.   37. The method of claim 36, wherein the liquid is supplied to a slope region on the major surface of the wafer.   43. The method of claim 42, wherein the gas is supplied to a radially inner edge of the ramp region.   The gas is supplied in an area adjacent to where the liquid is supplied, and the area has a radial width to reduce the possibility of liquid flowing radially inward over the wafer. 37. The method of claim 36, having a circumferential length.   37. The method of claim 36, wherein the chuck rotates the wafer between about 50 rpm and about 500 rpm during the edge cleaning process.   37. The method of claim 36, wherein the chuck rotates the wafer at about 350 rpm during the edge cleaning process.   38. The method of claim 36, further comprising supplying DI water to both major surfaces of the wafer.   37. The method of claim 36, further comprising drying the wafer by rotating the wafer from about 1,000 rpm to about 3,000 rpm and providing a flow of gas to the major surface of the wafer. .   37. The method of claim 36, further comprising delivering the liquid to the back side of the wafer at a one-third interval while vibrating the wafer such that the liquid does not directly contact a positioner that holds the wafer.   38. The method of claim 36, further comprising pumping the liquid against the backside of the wafer such that the liquid does not directly contact a positioner that holds the wafer.   37. The method of claim 36, further comprising rotating the chuck holding the wafer with sufficient acceleration such that the wafer moves relative to the chuck and repeating the cleaning process. A method for determining positioning of a wafer on a chuck,
Rotating the wafer placed on the chuck;
Measuring characteristics of the main surface of the wafer by means of a sensor as the wafer is rotated;
Determining whether the wafer is properly positioned based on the measured characteristics.   53. The method of claim 52, wherein the sensor is an optical sensor that measures the reflectance of light from the surface of the wafer.   53. The method of claim 52, wherein if the reflectivity changes below a threshold, it is determined that the wafer is not properly positioned on the chuck.   53. The method of claim 52, wherein the sensor is a proximity sensor that measures a distance between the sensor and the wafer surface.   53. The method of claim 52, wherein the sensor is an acoustic sensor.   53. The method of claim 52, wherein the sensor is an eddy current sensor. A process chamber for an electropolishing process or electroplating process of a semiconductor wafer,
A chuck assembly for positioning a wafer on the opposite side of a processing nozzle configured to supply a processing liquid to a main surface of the wafer, wherein the chuck assembly is positioned relative to the processing nozzle when processing the wafer. A chuck assembly that translates in a first direction;
And a shroud mechanically coupled to the chuck assembly for translation with the chuck assembly.   59. The process chamber of claim 58, wherein the shroud is magnetically coupled to the chuck assembly.   59. The process chamber of claim 58, wherein the chuck assembly translates in a second direction perpendicular to the first direction to adjust where the liquid is supplied onto the wafer.   59. The process chamber of claim 58, wherein the chuck assembly positions the major surface of the wafer at a distance of about 0.5 mm to about 10 mm from the nozzle during an electropolishing process.   62. The process chamber of claim 61, wherein the distance is about 5 mm.   59. The process chamber of claim 58, wherein the chuck assembly positions the major surface of the wafer at a distance of about 0.5 mm to about 20 mm from the nozzle during an electroplating process.   64. The process chamber of claim 63, wherein the distance is about 5 mm.   59. The process chamber of claim 58, further comprising an optical sensor and an endpoint detector configured to measure a metal layer on the major surface of the wafer.   59. The process chamber of claim 58, wherein the chuck assembly is magnetically coupled to the process chamber.   68. The process chamber of claim 66, wherein the chuck assembly can be disengaged from the process chamber. An electroplating or electropolishing device,
A nozzle that directs the flow of processing liquid;
And an energy element configured to enhance agitation of the process fluid at the surface of the metal film.   69. The apparatus of claim 68, wherein the energy element is mechanically coupled to the nozzle.   69. The apparatus of claim 68, wherein the energy element comprises at least one of an ultrasonic transducer, a magnasonic transducer, a laser source, an infrared heat source, a microwave source, and a magnet source.   69. The apparatus of claim 68, wherein the energy element comprises an ultrasonic transducer configured to operate in the range of 15 KHz to 110 MHz. 69. The energy element comprises a laser configured to operate in the range of 1 W / cm < ² > to 100 W / cm < ² >, wherein the laser is directed to a surface of a thin metal film on the wafer. apparatus.   69. The apparatus of claim 68, further comprising measuring the thickness of the metal thin film by stimulating ultrasound with a laser. 69. The energy element includes an infrared source configured to operate in the range of 1 W / cm < ² > to 100 W / cm < ² >, wherein the infrared source is directed to the surface of the metal film on the wafer. Equipment.   69. The apparatus of claim 68, further comprising an infrared sensor for measuring a surface temperature of the metal thin film surface.   69. The apparatus of claim 68, wherein the energy element comprises a magnetic source configured to focus a current in the process fluid at the surface of the thin metal film on the wafer. A method for electropolishing or electroplating a metal layer on a semiconductor wafer, comprising:
An operation of rotating the wafer chuck holding the wafer;
Sending a flow of processing fluid to a metal layer on the surface of the wafer;
An operation of translating the wafer relative to the flow of the processing fluid;
Translating the shroud with the wafer,
The shroud and the wafer chuck are mechanically connected.   78. The method of claim 77, wherein the shroud and wafer chuck are magnetically coupled and can be separated.   78. The method of claim 77, wherein the wafer is translated in a direction parallel to the major surface of the wafer and rotated at a constant linear velocity.   78. The method of claim 77, further comprising measuring the reflectivity of the metal layer with an endpoint detector and generating a metal film thickness profile.   78. The method of claim 77, further comprising adjusting the current flow based on the determined metal film thickness profile. The electropolishing process
a) determining a desired thickness of the metal film on the wafer;
b) removing a portion of the metal film on the wafer;
c) measuring the thickness of the metal thin film;
78. The method of claim 77, comprising d) repeating b), c), and d) until the desired thickness is measured if the metal film thickness is greater than the desired thickness. .   83. The method of claim 82, wherein the metal film thickness is measured by an endpoint detector.   83. The method of claim 82, wherein the metal film thickness is measured by measuring ultrasonic waves generated by sending a laser to the surface of the metal film.   83. The method of claim 82, further comprising electroplating the wafer if it is determined in c) that the metal film thickness is too thin.   78. The method of claim 77, wherein in an electropolishing process, the rotational speed of the chuck is varied in relation to the linear travel distance between the wafer and a nozzle parallel to the major surface of the wafer.   78. The method of claim 77, wherein in an electropolishing process, the rotational speed of the chuck is varied in relation to the current density of the electropolishing process liquid.   78. In an electropolishing process, the rotational speed of the chuck is varied in relation to the measured metal film thickness profile, a desired thickness profile, and the position of the wafer being polished. the method of.   78. The method of claim 77, wherein the chuck is rotated in a constant linear velocity mode.   78. The method of claim 77, wherein the chuck is rotated in a constant rotation mode.   78. The method of claim 77, wherein the chuck is rotated in a constant centrifugal force mode. An apparatus for electroplating a wafer,
A shower head for supplying a process liquid;
An inlet for receiving the process fluid;
A flow path combined with the inlet and disposed between the inlet and the plurality of orifices;
Filter elements and
The filter element is disposed within the flow path so that the process fluid entering the inlet is distributed throughout the flow path and flows uniformly from the plurality of orifices. A plurality of flow paths disposed between the plurality of inlets and the plurality of orifices, wherein at least one of the inlets is associated with each flow path;
94. The apparatus of claim 92, further comprising a plurality of filter elements that disperse the processing fluid throughout each flow path.   93. The apparatus according to claim 92, wherein the filter element is disposed on the opposite side of the inlet.   94. The apparatus of claim 92, wherein the filter element is a blocker plate disposed on the opposite side of the inlet.   The apparatus of claim 92, wherein the showerhead is configured for a 300 mm wafer or a 200 mm wafer.   94. The apparatus of claim 92, further comprising an electrode ring disposed adjacent to the plurality of orifices and outside the flow path.   98. The apparatus of claim 97, wherein the electrode ring comprises an anticorrosive metal or alloy.   98. The apparatus of claim 97, further comprising a nozzle head having a plurality of nozzle holes disposed above the showerhead electrode ring.   99. The apparatus of claim 98, wherein the plurality of nozzle holes are offset relative to the plurality of orifices. A method for electroplating a semiconductor wafer comprising:
Receiving the process liquid through an inlet into a flow path including a plurality of holes for dispersing the process liquid;
Dispersing the process liquid received through the inlet throughout the flow path such that the process liquid passes uniformly through the plurality of orifices. Receiving process liquid in a plurality of flow paths disposed between the plurality of inlets and the plurality of orifices and having at least one inlet associated with each flow path;
102. The method of claim 101, further comprising dispersing the received process liquid throughout each flow path.   102. The method of claim 101, wherein the process liquid is an electrolyte fluid.   102. The method of claim 101, wherein the process liquid is dispersed by a filter element located on the opposite side of the inlet.   105. The method of claim 104, wherein the filter element is a blocker plate.   102. The method of claim 101, further comprising electroplating a 300mm wafer or a 200mm wafer.   102. The method of claim 101, further comprising passing the process fluid over an electrode ring after the process fluid has been supplied from the plurality of orifices.   108. The method of claim 107, wherein the electrode ring comprises an anticorrosive metal or alloy.   108. The method of claim 107, further comprising passing the process fluid through a nozzle head that includes a plurality of nozzle holes, and wherein the nozzle head is located above the electrode ring.   110. The method of claim 109, further comprising biasing the plurality of nozzle holes relative to the plurality of orifices.   110. The process fluid flow is dispersed within the flow path by the filter element, flows uniformly from the plurality of orifices through the electrode ring, and flows through the nozzle holes to the surface of the wafer. The method described in 1. An apparatus for leveling a semiconductor wafer in a processing apparatus,
Three sensors arranged substantially in a plane;
A chuck configured to hold a wafer opposite the three sensors;
The three sensors are configured to measure a distance of the wafer surface relative to the sensors.   113. The apparatus of claim 112, wherein the plane is parallel to a portion of the processing apparatus.   113. The apparatus according to claim 112, wherein the plane is associated with a processing nozzle.   113. The apparatus of claim 112, wherein the sensor includes a conductive line that completes a circuit with a signal line connected to the sensor, a metal layer on a surface of the wafer, and a ground line connected to the wafer. .   116. The apparatus of claim 115, further comprising a control system that measures a distance offset of the wafer based on a signal generated when the circuit is completed.   117. The apparatus of claim 116, wherein the control system adjusts the chuck based on the distance measurement. A method for leveling a wafer in a processing apparatus,
Determining a desired alignment plane of the wafer;
Measuring the position of the wafer at three locations with respect to the desired alignment plane of the wafer;
Adjusting the wafer based on the determined position of the wafer and a desired alignment plane.   119. The method of claim 118, wherein the plane is parallel to a portion of the processing apparatus.   119. The method of claim 118, wherein the plane is associated with a processing nozzle.   Determining the position of the wafer includes measuring distance by three sensors, a signal line connected to the sensor, a metal layer on the surface of the wafer, and connected to the wafer metal layer. 119. The method of claim 118, wherein each has a conductive pin that completes the circuit with a ground wire present.   122. The method of claim 121, wherein the control system measures a distance offset from the plane based on a signal generated when the circuit is completed.   123. The method of claim 122, wherein adjusting the wafer includes moving a chuck that holds the wafer based on the distance measurement.

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