KR20040099407A - Electropolishing and/or electroplating apparatus and methods - Google Patents

Abstract

In one aspect of the invention, an exemplary apparatus and method for an electropolishing and / or electroplating process for a semiconductor wafer are provided. One example apparatus includes a cleaning module with an edge clean assembly 930 to remove metal remaining on the inclined surface or edge portion of the wafer 901. This edge cleaning device includes a nozzle head 1030 configured to supply liquid and gas to a major surface of the wafer, and supplies gas in the inner radial direction of the position and the liquid is supplied to the inner film with a metal film formed on the wafer. To reduce the potential of the liquid to flow in the direction.

Description

Electropolishing and / or Electroplating Apparatus and Method {ELECTROPOLISHING AND / OR ELECTROPLATING APPARATUS AND METHODS}

Semiconductor devices are fabricated or assembled on semiconductor wafers using a number of different processing steps to produce transistors or interconnect devices. In order to electrically connect transistor terminals associated with the semiconductor wafer, conductive (eg, metal) trenches, vias, and the like are formed in the dielectric material as part of the semiconductor device. Trench and bias connect electrical signals and power between transistors, internal circuitry of the semiconductor device, and circuitry to the exterior of the semiconductor device.

When forming the interconnect elements, masking, etching and deposition processes, such as masking, may be performed on the semiconductor wafer to form the desired electronic circuits of the semiconductor device. In particular, a plurality of masking and etching steps may be performed to form a pattern of concave regions in the dielectric layer on the semiconductor wafer that acts as a trench and a bias for the interconnect. Subsequently, a deposition process may be performed to deposit a metal layer over the semiconductor wafer, depositing the metal on the non-concave region of the semiconductor wafer and in both the trench and the bias. In order to isolate interconnects such as patterned trenches and vias, metal deposited on non-concave regions of the semiconductor wafer is removed.

Conventional methods for producing metal films deposited on non-concave regions of dielectric layers on semiconductor wafers include, for example, chemical mechanical polishing (CMP). CMP methods are widely known and used in the semiconductor industry to polish and planarize metal layers inside trenches and vias with non-concave regions of dielectric layers to form interconnect lines.

However, the CMP method has a detrimental effect on the underlying semiconductor structure due to the relatively strong mechanical forces involved. For example, if the interconnect geometry moves below 0.13 microns, there may be a large difference between the mechanical properties of the low k thin film and conductive material such as copper used in conventional damascene processes. For example, the Young Modulus of a low k dielectric thin film may be less than 1/10 of the size of copper. As a result, the relatively strong mechanical forces exerted on the dielectric thin film and copper, or between other elements, in the CMP process may cause thin layer delamination, bowling, erosion, thin film lifting ( stresses associated with defects in the semiconductor structure, including film lifting, scratching, and the like.

Accordingly, new processing apparatus and techniques for depositing and polishing metal layers are needed. For example, the metal layer may be removed or deposited from the wafer using an electropolishing or electroplating process. Usually, in an electropolishing or electroplating process, the portion of the wafer being polished or plated is immersed in the electrolyte and charge is applied to the wafer. These conditions allow copper to be deposited or copper removed from the wafer depending on the relative charge applied to the wafer.

The present invention discloses U.S. Provisional Application No. 60 / 372,542, entitled "Mainframe and / or Electroplating Assembly for Electropolishing and / or Electroplating", filed Apr. 14, 2002, U.S. Provisional Application 60 / 379,919 (name of the invention: “End Effector Seal”, filed April 8, 2002), US Provisional Application No. 60 / 370,955 (name of the invention: “Wafer Cleaning Method and Device”, 2002 US Patent Provisional Application No. 60 / 372,566, filed Apr. 8, entitled "Electropolishing and / or Electroplating Methods and Apparatus", filed April 14, 2002, US Patent Provisional Application 60 / 370,956 (name of the invention: “Method and Apparatus for Delivering Liquid”, filed April 8, 2002), US Provisional Application No. 60 / 370,929 (name of the invention: “Method of Leveling Wafer; and Apparatus ", filed April 14, 2002, US Provisional Application No. 60 / 372,567 (name of the invention:" Electropolishing a metal film on a substrate " Claim method and device, "filed April 14, 2002), and US Provisional Application No. 60 / 390,460 (named" Electroplating Device ", filed June 21, 2002). All of which are hereby incorporated by reference in their entirety.

The present invention relates generally to semiconductor processing apparatus and methods, and more particularly, to electropolishing and / or electroplating apparatus and methods for electropolishing and / or electroplating conductive layers on semiconductor devices.

1 illustrates an example semiconductor processing assembly that may be used in electropolishing and / or electroplating semiconductor wafers,

2 shows a robot including an exemplary end effector for transferring a semiconductor wafer,

3 is a top view of an exemplary end effector,

4A and 4B show top and cross sectional views of an exemplary end effector,

5 is a top view of an exemplary end effector,

6 is a top view of an exemplary end effector,

7 is a top view of an example end effector,

8 is a side view of an exemplary vacuum cup,

9A shows an exemplary cleaning chamber module with a dome cover,

9B is a partial internal view of the cleaning chamber module,

9C is an exploded view of the cleaning chamber module showing the cleaning nozzle in detail;

10A and 10B are top and side views of an exemplary edge clean assembly,

11A-11H illustrate various views of an exemplary nozzle head included as part of a bevel clean assembly,

12 is an exploded view of an example chuck motor assembly included as part of a cleaning chamber module,

13 is an exploded view of a cleaning chamber window included in the cleaning chamber module,

14 is an exploded view of an exemplary optical sensor included in the cleaning chamber module,

15 is an example method for determining the proper location of a wafer within a chuck;

16A-16C and 17A-17C illustrate an exemplary wafer cleaning process,

18 is an exploded view of an example process chamber assembly,

FIG. 19 is an exploded view of an example process drive system that may be included within the process chamber assembly implemented in FIG. 18;

20 shows an example nozzle with an energy reinforcing element,

21 is an exploded view of an exemplary electroplating apparatus,

FIG. 22 is an exploded view of the example plating shower head assembly shown in FIG. 21;

FIG. 23 is an exploded view of an exemplary plating shearer head for a 300 mm wafer;

24 is an exploded view of an exemplary plating shearer head for a 200 mm wafer,

25A-25E show several views of the shroud head shown in FIGS. 22-24,

26A and 26B are top and cross sectional views of exemplary leveling tools and wafer chucks,

FIG. 26C is a cross sectional view of the example sensor shown in FIGS. 26A and 26B;

27 shows an exemplary view of a software panel for the leveling tool.

One aspect of the present invention relates to an exemplary apparatus and method for electropolishing and / or electroplating conductive thin films on a wafer. Exemplary apparatuses include various processing modules, such as cleaning modules, processing modules, alignment modules, and various apparatus for executing processes of different modules, such as robots, end effectors, liquid delivery systems, and the like.

Other aspects of the present invention include various apparatus and processing methods. One example apparatus includes a cleaning module with a wafer edge cleaning assembly for removing metal residue on the outer or inclined portions of the major surface of the wafer. The edge cleaning device includes a nozzle head configured to supply liquid and gas to the major surface of the wafer. The nozzle supplies liquid to an area adjacent the outer edge of the major surface of the wafer and supplies gas in the inner radial direction to the location where the liquid is supplied. Guiding gas to the wafer surface at an inner radial position of the position at which the liquid is supplied can reduce the potential of the inner radially flowing liquid on the wafer to the metal layer formed thereon.

The present invention is better understood upon consideration of the following detailed description in conjunction with the accompanying drawings and claims.

To provide a more complete understanding of the invention, numerous specific details such as specific materials, parameters, etc. are set forth in the following description. However, it is understood that such description is provided not to limit the scope of the present invention but to explain a better exemplary embodiment.

I. Exemplary electropolishing and / or electroplating assemblies:

A first aspect of the invention includes an exemplary electropolishing and / or electroplating assembly for processing a semiconductor wafer. In one example, an apparatus for processing one or more semiconductor wafers includes a module for storing one or more wafers, two or more vertically stacked processing modules for electropolishing or electroplating a wafer, and for transferring wafers ( Robots (with end effectors, etc.). The apparatus for processing such wafers may be separated into two or more sections featuring separate frames. Usually, a robot transfers a wafer between a module for storing a wafer, a processing module, and a cleaning module for performing desired processing on the wafer. In addition, various other modules and features for the processing of semiconductor wafers as described below may be included.

1 shows an exploded view of an exemplary electropolishing and / or electroplating assembly 100. In this example, electropolishing and / or electroplating assembly 100 includes a mainframe (rear, "BE") 108 and a frontframe (factory interface, "FI") 132. However, assembly 100 may be divided into fewer or more sections.

BE 108 includes electrical chassis assembly 102, cleaning drain / process outlet 104, cleaning module assembly 106, AC control assembly 110, liquid delivery system (LDS) 112, gas control system (GCS). 114, process drain 116, pump and surge suppressor 118, cabinet outlet 120, process tank 122, liquid filter 124, liquid containment tray 126, and Dual containment region 128, process module assembly 130, may be included.

FI 132 includes wafer pre-aligner 134, front panel 136, light tower 138, robot frame assembly 140, robot controller 142, emergency machine off (EMO) button 144, front opening unified pod (FOUP) 146, and fan filter unit 152.

This electropolishing and / or electroplating assembly 100 can be separated into two sections, ie FI 132 and BE 108, so that the two sections can be transported separately and at the site. Can be reassembled into one unit. In addition, the robot frame assembly 140 may include a robot assembly 147, a dry end effector 148, a wet end effector 149, and a robot controller 142, for example for FI or for maintenance. May be separated from 132 or rolled out of FI 132. Thus, the electropolishing and / or electroplating assembly 100 can be separated or modularized into several sections, which is advantageous for transportation, cleaning, maintenance and the like.

As shown in FIG. 1, the FOUP 146 may include one or more pods for storing wafers. Dry end effector 148 transfers wafer 150 from any one of the pods to wafer pre-aligner 134. The wafer pre-aligner 134 aligns the wafer 150 before the wet end effector 149 recovers the wafer 150 and transfers the wafer 150 to the process module assembly 130. Wafer 150 may be transferred between modules by other methods and apparatus.

The process module assembly 130 may include an electroplating assembly for wafer plating or an electropolishing assembly 131 for wafer polishing of one or more racks. The electropolishing assembly or electroplating assembly 131 may be stacked vertically to reduce the footprint of the process module assembly 130. The cleaning module assembly 106 can include one or more rack's cleaning chamber modules 107 for cleaning the wafers. Similarly, the cleaning chamber modules 107 may be stacked vertically. After the wafer 150 has been processed for electropolishing or electroplating, the wet end effector 149 transfers the wafer 150 to the cleaning chamber module 107. The dry end effector 148 recovers the wafer 150 from the cleaning chamber module 107 and returns the wafer 150 to the pod in the FOUP 146. Usually, the “dry” end effector 148 recovers the wafer 150 from the pod in the FOUP 146 and returns the wafer to this pod, or retrieves the wafer 150 from the cleaning chamber module 107. If used. Since the wafer 150 may have residue due to processing, the “wet” end effector 149 is usually used to recover the wafer 150 after processing. Limiting the recovery of processed wafers by the wet end effector 149 will reduce the potential for cross-blocking between the dry end effector 148 and the wet end effector 149, and the wafers may be electropolished and / or electrolyzed. Processed and transferred within the plating assembly 100.

Exemplary electropolishing assemblies that may be used in conjunction with electropolishing and / or electroplating assemblies 100 are entitled “ELECTROPOLISHING ASSEMBLY AND METHODS FOR ELECTROPOLISHING CONDUCTIVE LAYERS”. And is disclosed in International Patent Application No. PCT / US02 / 36567, filed November 13, 2002, which is incorporated herein by reference.

As shown in FIG. 1, most electrical devices are embedded within the BE 108, in particular within the electrical chassis assembly 102 and the AC control assembly 110. LDS 112 and GCS 114 are also located within BE 108.

LDS 112 may include DI water, and supply lines for various chemical and / or electrolytic fluids. Such supply lines may vary in processing modules included in electropolishing and / or electroplating assembly 100 and in components that depend on the particular application. GCS 114 may also include several control valves, sensors, and supply lines to control and monitor the delivery of various chemicals and fluids.

The pump and surge suppressor 118 pumps process liquid from the process tank 122 to the process module assembly 130. A liquid filter 124 can be included in the supply line to filter the process liquid before the process liquid goes to the process module assembly 130. After processing the wafer 150, the process liquid may be drained into the process tank 122 through the process drain 116. Drain any gas, such as potentially harmful gas, from the process module assembly 130 and the cleaning module assembly 106 through the process outlet 104. The cleaning drain / process outlet 104 may also be used to discharge DI water or gas from the cleaning module assembly 106. Cabinet outlet 120 may be used to release a gas that is generally present inside BE 108. FI 132 may include fan filter unit 152 to provide filtered cleaning air within FI 132.

BE 108 may also include a liquid containment tray 126 and a double containment region 128. The liquid containment tray 126 may be useful if the process tank 122 overflows or if there is a leak in the supply line. The liquid containment tray 126 may further include a plurality of leak sensors for detecting leaks. Double containment region 128 may typically include oxidation and corrosion protection materials.

Supply lines, pumps and surge suppressors 118, liquid filters 124, liquid containment trays 126, and double containment regions 128 usually include oxidation and corrosion protection materials.

BE 108, FI 132 and robot frame assembly 140 may be made of stainless steel, preferably grade 316 stainless steel. The robot assembly 147 may be made of aluminum, stainless steel, or the like. If the robotic assembly 147 contains aluminum or susceptible materials, the surfaces of these aluminum portions can be anodized and coated with Teflon or the like to protect the surfaces of these aluminum portions from corrosion. The cleaning module assembly 106 can be made of stainless steel, plastic, PVC, PVDE, polyurethane, Teflon, and the like, and preferably made of grade 316 stainless steel. GCS 114 and liquid containment tray 126 may be made of a plastic material, preferably non-flammable plastic. Process tank 122 may be made of plastic, preferably PVDF, such as PVC, PVDF, Teflon, or the like. However, it should be understood that other suitable materials or coatings for use within BE 108 and / or FI 132 may be considered.

An exemplary process for electropolishing or electroplating semiconductor wafers begins with a pod comprising a wafer located within FOUP 146. When the pod, or the door to the pod, is open, the robot assembly 147 is accessible internally, picking up the wafer by the end effector 148. The robotic assembly 147 and the dry end effector 148 transfer the wafer to the wafer pre-aligner 134 to align the wafer 150 for processing. After the wafer pre-aligner 134 aligns the wafer 150, the robotic assembly 147 picks up the wafer 150 from the wafer pre-aligner 134 using the wet end effector 149, The wafer 150 is transferred to the electropolishing or electroplating assembly 131 for processing.

After the electropolishing or electroplating process is completed, the robot assembly 147 picks up the wafer 150 using the wet end effector 149 and moves the wafer into the cleaning chamber module 107. After the cleaning process is complete, the dry end effector 148 picks up the wafer 150 and transfers the wafer 150 back to the pod in the FOUP 146 for recovery.

In another exemplary process that includes a plurality of wafers and a plurality of electropolishing or electroplating assemblies, the above-described example process may be applied to the first wafer, while similar steps may be applied to the second wafer, the third wafer, and the like.

Several components of the electropolishing or electroplating assembly 100 will be described in more detail below. Although exemplary electropolishing and / or electroplating devices have been described with respect to particular embodiments, examples, and applications, it will be apparent to those skilled in the art that various modifications and changes can be made without departing from the present invention.

II. End effector seal

In one aspect of a semiconductor assembly, an exemplary end effector device and method are described. End effectors are commonly used in wafer fabrication processes, for example, transferring wafers from one processing module to another for other further processing, such as cleaning, storage, and the like. An exemplary end effector according to one embodiment includes a vacuum cup seal for firmly holding and transporting a semiconductor wafer. Exemplary end effectors may be included within a semiconductor processing assembly, and more specifically, may be included within a robotic assembly of a semiconductor assembly. Exemplary end effectors allow for tighter holding of the semiconductor wafer surface, which in turn can deliver the wafer more accurately and reliably to the wafer's destination.

2 illustrates an example robotic assembly for transferring a semiconductor wafer into a processing assembly. The robotic assembly includes an example end effector 206 associated with a robot for picking up and transporting the wafer 216. The end effector 206 has a vacuum at the bottom to secure the wafer 216 to the bottom of the end effector for transfer from one module to another. The end effector 206 positions or releases the wafer 216 by removing vacuum or increasing pressure such that gravity overcomes the seal and the wafer 216 is released from the end effector 206. The end effector 206 may also hold the underside of the wafer 216 by a pressure lower than ambient to maintain the wafer 216 in the end effector 206 against vibration, acceleration during transfer, and the like.

3 illustrates one side of an exemplary end effector 306 in more detail. As shown in FIG. 3, the end effector 306 is connected to a vacuum source, which is controlled by a vacuum valve 322 and pressurized controlled by a nitrogen valve 320. It has a nitrogen source. When the vacuum valve 322 is actuated, the vacuum source is connected to the end effector 306 and will reduce the pressure in the vacuum cup 302 to hold the wafer 216 at the end effector 306. When the vacuum valve 322 is deactivated and the nitrogen valve 320 is operated, the end effector 306 may release the wafer 216 from the vacuum cup 302 as the pressure inside the vacuum cup 302 increases. will be.

It should be understood that no absolute vacuum or near absolute vacuum is required. Rather, reduced pressure is sufficient relative to a processing environment sufficient to hold and hold the wafer 216 against gravity, vibration, acceleration during transfer, and the like. In addition, other gases other than nitrogen, such as air, may be used to introduce gas and increase pressure when releasing the wafer.

Nitrogen when the wafer is not held or transported to remove particulates and / or to prevent acid or the like from entering the vacuum passage or vacuum cup 302 inside the end effector 306. The valve 320 can be kept in operation.

4A and 4B show a plan view and a cross-sectional view of one exemplary end effector 406, which includes a vacuum cup 402, a mushroom cap 404, a groove 405, A cutout 408 (to reduce the weight of the end effector), a vacuum passage 412 and a screw 416 (to attach to a robot or the like). End effector 406 may include any suitable material, such as stainless steel, aluminum, various alloys, or metals, ceramics, plastics, etc., in its configuration.

As shown in FIGS. 3 and 4A, the vacuum source removes gas through the opening 414 and the vacuum passage 412 located near the distal end of the end effector 406 and on the large side. The vacuum passage 412 may be formed within the end effector (as shown) or integrally with the end effector, or through a separate passage located adjacent to the end effector 406, for example the end effector 406. It may be formed on the opposite surface of the).

If a vacuum or reduced pressure is created in the vacuum passage 412, the wafer located adjacent to the end effector 406 is forced or pulled against the vacuum cup 402, thereby vacuuming the end effector 402. A temporary seal is created between the cup 402 and the opposing major surface of the wafer. The vacuum cup 402 can have any suitable shape, such as oval, elongated circle, square, and the like. The vacuum cup 402 fits over the rim of the mushroom cap 404 and extends over the surface of the end effector 406. The vacuum cup 402 may comprise an elastomer, silicone rubber, or any other suitable material that is generally flexible or flexible to create a temporary seal with the wafer without damaging the wafer, such as scratching or cracking.

As shown in FIGS. 4A and 4B, shallow grooves 405 are formed across the mushroom cap 404 to increase retention of the vacuum, so that the wafer 416 is plugged into the opening 414. prevent. The groove 405 separates the top plane of the mushroom cap 404 into two half circles. Shallow groove 405 is also formed in a cross-shape shape, square, round, or other suitable shape to improve the vacuum and suction of end effector 406 and to prevent opening 414 from blocking. Reduces the potential for The mushroom cap 404 is made of a material similar to the end effector 406, such as metal or plastic. As an example, the mushroom cap 404 is at a height similar to the distal end of the end effector 406 (see FIG. 4B), and when the wafer is pulled by the vacuum cup 402, the wafer is in contact with the mushroom cap 404. Pulled against the end.

8 is a cross-sectional view of a vacuum cup that may be included in an exemplary end effector. As shown in FIG. 8, the vacuum cup is usually a cavity formed on one surface of the end effector, which will typically include a sidewall 820 and a bottom 818 that are inclined by an angle α. Can be. The angle α can vary between 0 degrees and 180 degrees depending on the particular application, preferably 5 degrees to 50 degrees, more preferably about 30 degrees. The sidewalls 820 may extend smoothly to the height H over the surface of the end effector and form a seal with the wafer. Referring again to FIGS. 4A, 4B and 8, the end effector 406 allows the wafer 416 to edge off the sidewalls 820 when gas is drawn from the opening 414 through the vacuum passage 410. Will be located in contact with The vacuum cup 402 will pull and hold the wafer 416 by the vacuum created in the cavity of the vacuum cup 402. This pressure difference creates a force sufficient to sustain the holding force on the wafer 416 above the force of gravity on the wafer. In order to release the wafer 1016 from the maintenance of the end effector 406, it is possible to guide gas (eg, nitrogen, etc.) through the vacuum passage 410 and through the opening 414 so that the holding force is overcome by gravity. The pressure inside the opening 414 is increased as much as possible.

5 is a top view of another exemplary end effector 506. The end effector 506 shown in FIG. 5 is similar to the end effector of FIGS. 3, 4A and 4B except that it includes three openings 514 and three vacuum cups 502. The opening 514 and vacuum cup 502 may be located at various locations on the end effector 506 depending on the particular application and configuration of the end effector 506. In addition, the shape of the end effector may include any suitable shape, such as horseshoe, rectangle, circle, rake shape including one or more prongs, and the like.

6 shows a top view of another exemplary end effector 606. The end effector 606 is similar to the end effector of FIGS. 4A and 4B except that it has a plurality of vacuum cups 602, here five vacuum cups 602, each of which is a ( Long mushroom cap 604 (not circular). In addition, the end effector 606 includes a common vacuum passage located adjacent to the opening 614, as opposed to FIG. 5, which includes a separate vacuum passage for each individual opening 514. .

7 shows a top view of another example end effector 706. The end effector 706 of FIG. 7 is similar to the end effector of FIGS. 3A and 3B except that one vacuum cup 702 includes a number of openings 714 therein. The vacuum cup 702 of this embodiment is shaped like a horseshoe, but has a function similar to the vacuum cup 402, and includes several long mushroom caps 704 similar to the mushroom cap 604.

While exemplary end effectors have been described with respect to specific examples and applications, it will be apparent to those skilled in the art that various modifications and variations can be made without departing from the invention. For example, various methods of creating a vacuum inside the vacuum cup may be considered, and vacuum cups and mushroom caps of different shapes and configurations for forming a seal when picking up and transferring the wafer may be considered.

III. Wafer cleaning method and apparatus

In one exemplary aspect of a semiconductor assembly, an exemplary wafer cleaning method and apparatus are disclosed. Exemplary wafer cleaning methods and apparatus may not only clean up debris or particulates of the wafer prior to the electropolishing or electroplating process, but may also clean the processing liquid of the wafer after the electropolishing or electroplating processing step. For example, after the electropolishing process, the outer region or edge of the major surface of the wafer (often referred to as the "bevel region") may comprise copper residues. It is desirable to etch this copper residue from the outer region and to clean the wafer without damaging the thin metal layer of the inner region of the wafer. Thus, in one aspect, the cleaning module includes an edge cleaning assembly to remove metal residue on the outer or edge portion of the wafer. This edge cleaning assembly includes a nozzle head configured to supply liquid and gas to the major surface of the wafer. The nozzle supplies liquid in the edge region and gas to the inner edge of the edge, thereby reducing the potential of the liquid flowing radially inwardly from the wafer to the metal film.

9A-9C show several views of an exemplary cleaning chamber module for cleaning a wafer. As shown in FIGS. 9A-9C, an exemplary cleaning chamber module includes a dome cover 902, a cleaning chamber window 904, a cylinder cover 906, a leak sensor 908, a drip pan drain line ( 910, base block 912, drip pan clamp 914, drip pan 922 (rear) and 926 (top), two nitrogen nozzles 924 (rear) and 928 (top), Edge cleaning assembly 930, light sensor 932, wafer front chemical nozzle 934, chuck 936, drain plate 938, top chamber 940, drain drain tube 942 ), A nitrogen line 944, an edge cleaning cover 946, a nozzle 948 for wafer back chemical, and a chuck motor assembly 950. In addition to one nozzle 934 for chemicals, the cleaning chamber module may include nozzles for one or more chemicals.

The wafer 901 may be located in the cleaning chamber by the end effector 903 or the like. Once the wafer 901 is determined to be located within an acceptable position on the chuck 936 for the cleaning process, the chuck motor assembly 950 will move about the chuck 936 and wafer 901 about an axis perpendicular to the major surface of the wafer. Can be rotated. As the chuck 936 and wafer 901 rotate at a rotational speed of about 30 rpm, the DI water nozzles 922 and 926 can supply a stream of DI water to the top and back surfaces of the wafer 901. This DI water may flow past the edge of the wafer 901 towards the wall of the cleaning chamber and is drained through the drain plate 938 into the drain drain tube 942. To remove DI water from and to the dry wafer 901, the chuck motor assembly 950 can increase the rotation speed to 2000 rpm ± 1000 rpm. The nitrogen nozzles 924 and 928 then supply a stream of nitrogen (or a stream of other suitable gas) to the top and back of the wafer 901 to further remove DI water from the top and back of the wafer 901. .

After washing and drying the wafer 901 and stopping the chuck motor assembly 950, the edge clean assembly 930 slides into position for edge cleaning. 10A and 10B show an exemplary wafer edge clean assembly 930, which includes a DI water tube 1006, a rod 1010, an adapter rod 1008, and a bracket 1012. , Screw 1014, air table cylinder 1016, adjustable screw 1018, flow regulator 1020, compressed air tube 1022, rod clamp 1024, acid tube 1026, nitrogen tube 1028 , Nozzle head 1030, rod whipper 1032, nitrogen nozzle 1034, and liquid nozzle 1036. The length of the edge clean assembly 930 can be adjusted for use with 200 mm wafers, 300 mm wafers, or other size wafers by adding or removing adapter rods 1008. The gap between the top of the wafer 901 and the nitrogen nozzle 1034 may be in the range of 0.1 mm to 10 mm, and the liquid nozzle 1036 may be located above the edge region 1004.

11A-11C are top, side and front views, respectively, of an exemplary nozzle head 1030 included with an edge clean assembly. As shown in FIGS. 11A-11C, the nitrogen nozzle 1034 generates a nitrogen curtain 1102 of nitrogen gas near the edge of the wafer 901. In an exemplary edge cleaning process, the wafer 901 may rotate at a rotational speed of approximately 50 rpm to 500 rpm, preferably at 200 rpm. The liquid nozzle 1036 supplies a stream of chemicals to form a thin layer about 10 mm wide on the edge region 1004 or the outer major surface of the wafer 904. The chemical removes the metal layer or metal residue, but the chemical may inadvertently spread toward the center of the wafer 901, which may have a detrimental effect on the metal layer. Various chemicals may be used to etch metal residues in the edge region 1004. For example, 10% H ₄ SO ₄ and 20% H ₂ O ₂ may be used to etch copper metal from the edge region 1004. In addition, to increase the etching rate, the chemical solution may be heated to a range of 25 ° C to 80 ° C.

To reduce the potential for chemicals to spread from the edges inwardly, the nitrogen nozzle 1034 supplies or directs a stream of gas, such as a stream of nitrogen, to provide a nitrogen curtain 1102 to the inner edge of the edge region 1004. By generating, the potential of the chemical is prevented or at least reduced from spreading towards the center of the wafer 901. After the edge region 1004 has been cleaned, the liquid nozzle 1036 may supply a liquid jet 1104 of DI water to dilute and / or rinse the chemical at the edge region 1004 of the wafer 901. . Further, in one example, after the edge cleaning process, additional DI water washing may be performed by using DI water nozzles 922, 926 to clean the top and back of the wafer 901.

When the edge cleaning process is finished, the chuck motor assembly 950 can stop the chuck 936 and wafer 901 from rotating, and the edge clean assembly 930 can slide back from the edge cleaning position to the stop position. have.

11D and 11E show several views of another exemplary nozzle head 1030. The example of FIGS. 11D and 11E shows that nitrogen nozzle 1034 has a horizontal span 1034h extending from the nozzle. Except that it is similar to that of FIGS. 11A-11C. This horizontal span 1034h may form a nitrogen curtain 3002 that more effectively prevents chemicals from the edge nozzle 1036 from spreading toward the center of the wafer 901. The distance between the horizontal span 1034h and the surface of the wafer 901 is preferably in the range of approximately 0.1 mm to 0.3 mm, more preferably approximately 1.5 mm.

11F and 11G show several views of another exemplary nozzle head 1030. The examples of FIGS. 11F and 11G are similar to those of FIGS. 11D and 11E except that the nozzle span extends from both sides of the bottom of the nozzle.

11H shows another exemplary nozzle head 1030. The example of FIG. 11H shows that the nozzle head 1030 has two liquid nozzles 1036, one for chemicals and the other for DI water, of FIG. 11A-11C. Similar to Individual nozzles may, for example, provide improved performance during DI water rinsing.

12 illustrates an example chuck motor assembly 950 that may be included in a wafer cleaning apparatus. In this example, the chuck motor assembly 950 includes a chuck 936, an upper motor plate 1202, an optical sensor 1204, a shaft sleeve 1206, a motor 1208, a flag 1210, a spacer 1212, Centrifugal block shaft 1214, centrifugal block 1216 and plug 1218.

9A, 9B, and 10A, in order to position the wafer 901 on the chuck 936, the end effector 903 is a wafer 901 from a process chamber or pre-aligner (see FIG. 1). ) And move this wafer 901 to the cleaning chamber module through the cleaning chamber window 904 for cleaning. 13 illustrates an exemplary cleaning chamber including an inner plate 1302, an outer plate 1304, a bracket 1306, a flow controller 1308, a cylinder 1310, a cylinder cover 906, and a limit sensor 1312. Show window 904. The cylinder 1310 may raise the outer plate 1304 and close the cleaning chamber window 904 to begin the wafer cleaning process.

As shown in FIG. 12, an exemplary chuck 936 includes a base 1220 and three positioners 1222. The chuck 936 can be modified for 200 mm wafers, 300 mm wafers, or other wafer sizes. When end effector 903 loads wafer 901 into chuck 936, wafer 901 is positioned within chuck 936 by three positioners 1222. 9A-9C, the optical sensor 932 may detect the position of the wafer 901 within the chuck 936. To check for errors in wafer positioning, the optical sensor 932 guides a beam to the top surface of the wafer 901 as shown in FIG. 15. If the end effector 903 positions the wafer 901 on the top surface of the positioner 1222, the beam will not reflect back completely to the reflection sensor 932. As the chuck 936 rotates, the reflectance can correspondingly change. In addition, since the distance between the wafer 901 and the reflection sensor 932 changes, the difference or change in reflectivity confirms whether the wafer 901 is correctly positioned on the chuck 936 and the three positioners 1222. It can be used to In one example, if the wafer 901 is correctly positioned on the chuck 936, the three positioners 1222 measure the reflectivity in the range of approximately 70% to 75% while the chuck is rotating. However, if the wafer 901 is not positioned correctly, the reflectivity is measured in the range of approximately 30% to 60%. The misplaced wafer may exit the chuck 936 as the chuck 936 rotates at high speed, which may cause the wafer 901 to break inside the cleaning chamber module.

14 shows an exemplary optical sensor 932, which includes a fitting tube 1402, a fitting o-ring 1404, a reflective sensor 1406, a holder 1408, and a viton. O-ring 1410, and holder flange 1412. It should be appreciated that other suitable optical sensors may be used to determine proper positioning of the wafer relative to the chuck 936. In another example, light sensor 932 may be replaced with a non-light sensor that measures the surface of the wafer, such as a proximity sensor, eddy current sensor, acoustic sensor, and the like.

In order to prevent the wafer 901 from spinning out of the chuck 936 by the movement of relatively high centrifugal force during various cleaning processes, such as drying cycles, the chuck positioner 1222 may move the centrifugal block 1216. It may include. This centrifugal block 1216 may comprise approximately lower elements (weights) that are heavier than the upper portion, which is up to approximately the centrifugal block shaft 1214. When the chuck 936 rotates at a rotational speed of about 1000 rpm or more, the centrifugal force will cause the weight in the centrifugal block 1216 to rotate outward. As a result, the upper portion of the centrifugal block 1216 moves inward to hold and secure the wafer 901 to the chuck 936. The weight, length, etc. of the centrifugal block 1216 and the positioner 1222 can be changed to change the speed at which the positioner 1222 moves to fix the wafer. When the chuck motor assembly 950 slows down or stops, the centrifugal block 1216 returns to the upright position due to the reduced or zero centrifugal force. To fix the wafer, the chuck rotational speed is set in the range of approximately 200 to 3000 rpm, preferably 2000 rpm.

16A-16C illustrate an example back wafer cleaning process and wafer associated with positioner 1222 and wafer back chemical 948. In an exemplary wafer back cleaning process, the motor 1208 is coupled with a nozzle 948 for wafer back chemical so that chemicals can be delivered to the back of the wafer 901 without being splashed and soiled by the three wafer positioners 1222. Vibrate chuck 936 to face. Chemicals in contact with the wafer positioner 1222 can splatter on the top surface of the wafer 901 and chemically etch the top surface, thereby damaging structures and devices formed on the wafer 901. . The back chemical nozzle 948 may be located between two positioners 1222 and may vibrate at an angle β to an angle β. Such a rear chemical nozzle 948 guides the rear chemical 948 off the center by moving the rear chemical at an angle γ to an angle γ, as shown in FIGS. 16A-16C. To cover the region of the wafer 901 beyond the angle β and angle −β.

The chemical delivered by the nozzle 948 for the wafer back chemical will reach the back of the wafer 901 and the cleaning time may range from 5 to 100 seconds, preferably 10 seconds. The cleaning process is then repeated for each third of the back of the wafer 901.

17A-17C illustrate another exemplary backside wafer cleaning process. This back wafer cleaning process may be pulsated such that the chuck 936 rotates continuously and the back chemical nozzle 948 is “off” and “on” between the positioners 1222 when directed to the positioners 1222. Or similar to the embodiment described with reference to FIGS. 16A-16C except that time is adjusted. Similar to FIGS. 16A-16C, the nozzle 948 for back chemical may oscillate by ± γ during the process. As shown in FIGS. 17B and 17C, when the chuck 936 rotates counterclockwise, the rear chemical nozzle 948 guides the liquid to the wafer up to an angle a _{1 at} which it stops. The liquid is again led to the back of the wafer at an angle a ₂ .

In another example, to clean the portion of the back of the wafer 901 in contact with the positioner 1222, the motor 1208 has a rotational movement of sufficient rotational acceleration to allow the wafer 01 to be moved from its original position. Will cause Thus, the chemical delivered by the nozzle 948 for wafer back chemical may reach the portion of the back of the wafer 901 that was in contact with the positioner 1222 prior to rotational movement. After cleaning the entire surface behind the wafer 901, the DI water nozzle 922 supplies a stream of DI water to rinse the chemical on the back of the wafer 901.

Wafer 901 may pass through a final cleaning cycle. As the chuck 936 and wafer 901 rotate at a rotational speed of about 30 rpm, the DI water nozzles 922 and 926 can simultaneously supply a stream of DI water to the back and top of the wafer 901. To remove DI water from and to the dry wafer 901, the chuck rotational speed can be increased to 2000 rpm ± 1000 rpm. Nitrogen nozzles 924 and 928 may then supply a stream of nitrogen to the top and back of wafer 901 to remove the DI water film from the top and back of wafer 901.

In light of the foregoing description of exemplary apparatus and methods, an exemplary cleaning method and sequence may proceed as follows.

Initial cleaning:

a. Returning the chuck,

b. Opening the outer plate 1302, and

c. Positioning the wafer 901 on the chuck 936,

d. Closing the outer plate 1302

Front cleaning:

e. Rotating the chuck 936 at a speed of 10 to 100 rpm, preferably at 50 rpm,

f. Delivering DI water from the DI water nozzle (top) 926 to the front of the wafer 901, and

g. After stopping DI water from the DI water nozzle (top) 926, increasing the chuck rotational speed to 1000-2000 rpm, preferably 2000 rpm,

h. Delivering nitrogen from the nitrogen nozzle (top) 928 to dry the top surface of the wafer 901,

i. Stopping the nitrogen stream and stopping the chuck rotation.

Edge Cleaning:

j. Moving the edge cleaning assembly 930 from the stop position to the edge cleaning position by powering the air tube cylinder 1016;

k. Rotating the wafer 901 at a rotational speed of 100 to 500 rpm, preferably 350 rpm, transferring nitrogen from the nitrogen nozzle 1034 through the nitrogen tube 1028, and

l. Delivering the edge cleaning chemical from the liquid nozzle 1036 through the acid tube 1026, and

m. Stopping the delivery of edge cleaning chemistry after the metal on the edge region 1004 has been etched away;

n. Delivering DI water from the liquid nozzle 1036 through the DI water tube 2006;

o. After rinsing the chemical on the edge region 1004, stopping the DI water stream,

p. Delivering nitrogen from the nitrogen nozzle 1034 through the nitrogen tube 1028, and

q. Stopping the chuck rotation and moving the edge cleaning assembly 930 back to the stop position.

Rear cleaning:

r. The chuck 936 is moved to a back cleaning position, that is, a distance between the wafer back chemical nozzle 948 and two adjacent positioners 1222 are equal. Motor 1208 begins to vibrate chuck 936 around nozzle 948 for wafer back chemical. This oscillation angle should be less than 45 ° ± 5 °. The nozzle 948 for wafer back chemical then delivers the chemical to the back of the wafer 901.

s. Step r is repeated for the second and third sections of the wafer 901. Alternatively, the wafer 901 can be rotated continuously in one direction and the rear chemical nozzle 948 pulsates so as not to contact the positioner 1222.

Shift turn cleaning:

t. The wafer 901 is shifted out of position by using high acceleration during the shift turn.

u. Repeat step (s).

v. Steps (s) through (u) are repeated for the second third of the wafer 901.

w. Steps (s) through (u) are repeated for the last third of the wafer 901.

x. DI water is delivered to the back of the wafer 901 through DI water nozzle (rear) 922 and forward of the wafer 901 through DI water nozzle (top) 926, rotating the wafer at about 50 rpm. Rotate at speed

y. Stop delivering DI water streams. After rotating the chuck 936 at a rotational speed of 1000 to 3000 rpm, preferably 2000 rpm, nitrogen is delivered to both the front and back of the wafer 901.

z. The delivery of the stream of nitrogen is stopped and the rotation of the chuck 936 is stopped. The cleaning chamber window 904 is opened by lowering the outer plate 1304 along with the cylinder 1310. End effector 903 then picks up wafer 901 and moves the wafer to a storage pod (not shown).

The above-described order presents one exemplary method for wafer cleaning and should not be construed as limited thereto. There are various alternative methods for cleaning the wafer 901 in accordance with various aspects of the present invention. For example, the second exemplary method performs the following steps (a) to (d) as described above to initiate the cleaning process, followed by steps (j) to (q) for edge cleaning, Finishing is carried out by carrying out steps (e) to (i) to clean and dry the front with DI water and nitrogen gas.

Another exemplary method performs steps (a) through (d) as described above to initiate a cleaning process, performs steps (j) through (q) for edge cleaning, and subsequently, Performing steps (r) and (s) to clean the rear by means, and performing steps (e) to (i) to clean and dry the front using DI water and nitrogen gas, and And performing steps (t) to (z) to clean and dry the rear with nitrogen gas. In addition, during the back cleaning process, DI water can be supplied to the top of the wafer, protecting the top surface from any of the chemicals used during the back etching. Thus, it will be apparent to those skilled in the art that various processes of cleaning semiconductor wafers may be considered by the exemplary apparatus and method.

Although apparatus and methods for cleaning wafers have been described for specific embodiments, examples, and applications, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the invention.

Ⅳ. Process chamber

In another aspect of a semiconductor assembly, a processing chamber for electropolishing and / or electroplating a semiconductor wafer is included. The exemplary processing chamber is interchangeable with the electropolishing apparatus and the electroplating apparatus.

In one exemplary embodiment, while the wafer is rotating, a strip of process fluid is directed to a relatively small portion of the major surface of the wafer. Nozzles or the like that lead the stream of fluid translate, for example, in a linear direction parallel to the major surface of the wafer from the inner diameter to the outer diameter of the wafer. To increase the uniformity of plating or polishing of the metal layer on the wafer, the rotation of the wafer is varied to produce a constant linear velocity of the wafer surface relative to the incident stream of fluid. In addition, various exemplary methods for determining electropolishing or electroplating processes and thin film profiles are disclosed.

18 includes an exploded view of an example process chamber assembly according to one embodiment. Exemplary process chamber assemblies include a dynamic shroud 1902, a magnetic coupler 1804, a shaft 1806, a bracket 1808 for mounting the shaft, a splashguard 1810, a tube 1812, a chamber (Chamber tray) 1814, bottom chamber 1816, supply path 1818 for light sensors, plug 1820, process chamber 1822, manifold 1824, nozzle plate 1826, endpoint detector ( end point detector 1828, nozzle block 1830, side plate 1832, chamber window 1834, half moon chamber 1836, gate chuck 1838, and window cylinder 1840.

Exemplary chambers may equally well be used for electropolishing and / or electroplating, but are generally described in connection with the electropolishing process. When using the present invention for electroplating, a nozzle block 1830, nozzle plate 1826, manifold 1824 and dynamic shroud 1802 can be used in the electropolishing process. Alternatively, these elements can be replaced with concentric electroplating devices. Exemplary concentric electroplating devices are described in US Pat. No. 6,395,152, entitled "Methods and Apparatus for Electrolytic Polishing Metal Interfaces on SEMICONDUCTOR DEVICES, July 2, 1999." US Patent No. 6,440,295, entitled "METHOD AND APPARATUS FOR ELECTROPOLISHING METAL INTERCONNECTION ON SEMICONDUCTOR DEVICES," dated July 2, 1999. These patents are incorporated herein by reference, and exemplary electropolishing and electroplating processes are also described in International Patent Application No. PCT / US02 / 36567 (Invention: “Electropolishing for Conductive Layers”). Method and electropolishing assembly (filed Nov. 13, 2002), US patent application 6,391,166 (name of the invention: "PLATING APPARATUS AND METHOD", filed Jan. 15, 1999), and International Patent Application No. PCT / US99 / 15506 (name of the invention: "Semiconductor" METHOD AND APPARATUS FOR ELECTROPOLISHING METAL INTERCONNECTION ON SEMICONDUCTOR DEVICES, filed Aug. 7, 1999, all of which are herein incorporated by reference. .

Exemplary end-point detectors and methods are also filed in US Pat. No. 6,447,668, entitled “METHODS AND APPARATUS FOR END-POINT DETECTION,” dated 2002.9.10. Is hereby incorporated by reference in its entirety.

As shown in FIG. 19, a power drive system that can be included within a process chamber cook includes an x-axis flag 1902, an x-axis driver assembly 1904, a coupling 1906, a motor 1908, z- Axial mounting bracket (1910), theta drive belt and pulley (1912), theta y-axis reflective sensor (1914), x-axis sensor (1916), theta mount (1918), z-axis universal ball joint (1920) ), z-drive table assembly 1922, z-motion mounting bracket 1924, theta motor 1926, theta drive pulley 1928, chuck assembly 1930, lead back cover assembly 1932, x- Axial linear bearing (1934), y-axis adjustment thumb-screw (1936), z-axis plate (1938), top cover (1940), z-axis linear bearing (1942), shaft 1944, x-axis magnet 1946, magnetic disconnect plate 1948, y-axis stage 1950, magnet 1952, magnet mounting bracket 1954.

For example, US Pat. No. 6,248,222B1 (name of the invention: "Method and Apparatus for HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND) / OR ELECTROPLATING OF THE WORKPIECE), filed Sep. 7, 1999, US Patent Application Serial No. 09 / 800,990 (name of the invention: "Maintaining semiconductor workpieces during electropolishing and / or electroplating of semiconductor workpieces) METHOD AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLATING OF THE WORKPIECE, "filed March 7, 2001, and US Patent Application Serial No. 09 / 856,855 Title of the Invention: "Method and Apparatus for HOLDING AND POSITIONING SE for holding and positioning semiconductor workpiece during electropolishing and / or electroplating of semiconductor workpiece An example chuck assembly is disclosed in MICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLATING OF THE WORKPIECE, filed May 21, 2001, all of which are incorporated herein by reference in their entirety.

As shown in FIG. 18, process chamber 1822 may include dynamic shroud 1802 that translates with splashguard 1810 and chuck assembly 1930 to include process fluid or electrolyte within the chamber region. have. An optical sensor cable may be installed for the optical sensor and the endpoint detector 1828, or other components such as sensors for detecting leaks in the bottom chamber 1816 or chamber tray 1814 via the supply path 1818. . Additional plugs 1820 may be used for additional feed paths.

18 and 19 include a magnet 1952 for connecting to the x-axis drive magnet mounting plate 1946. The chuck assembly 1930 can move along the x-direction by sliding on the shaft 1944 through the x-axis linear bearing 1934. For example, the process drive system can undocking with the process chamber assembly if the example device does not work during maintenance or to change the processing device. The motor 1908 will rotate the internal screw in the x-axis drive assembly 1904 counterclockwise to move it forward along the x-direction. The same or new process drive assembly may dock with the process chamber assembly in the same manner. One example includes a safety countermeasure, which includes a magnet 1952 if there is an object between the process drive system and the chamber, or if something prevents the x-axis drive assembly 1904 from moving forward or backward. 1946 will be released from the x-axis disconnect plate 1948. The x-axis drive 1904 and motor 1908 will not be able to move the chuck assembly and top cover further, at which point the x-axis sensor 1916 prevents the release of the x-axis from the stop of the process drive system. Will be recognized, and the motor 1908 will be shut down.

During installation or periodic maintenance of the exemplary device, the y-axis adjusting thumbscrew 1936 adjusts the position of the chuck assembly 1930 relative to the dynamic shroud 1802 and the nozzle plate 1826 along the y-direction. Can be.

18 and 19, when an exemplary process chamber is used in a process application, the process drive system connects the magnet 1952 on the process drive system to a magnetic coupler 1804 on the process chamber assembly. Will be docked within. The window cylinder 1840 raises the gate chuck 1838 from the half moon chamber 1836, creating an opening in the chamber window 1834. The robot (see FIG. 1) can transfer the wafer 1801 from the pre-aligner (see FIG. 1) through the chamber window 1834. Wafer 1801 is loaded into chuck assembly 1930 for electropolishing and / or electroplating processes.

To move the chuck assembly 1930 from the loading or home position to a position for electropolishing or electroplating, a motor in the z-drive table assembly 1922 is placed between the chuck assembly 1930 and the top of the nozzle block 1830. The inner shaft assembly is rotated to lower the z-axis plate 1938 from the top of the z-axis linear bearing 1942 until the gap is in the range of approximately 0.5 mm to 10 mm, preferably 5 mm. Alternatively, if the exemplary process chamber is used for electroplating, the motor in z-drive table assembly 1922 may have a gap between the wafer 1801 on the chuck assembly 1930 and the top of the concentric apparatus of approximately 0.5 mm to 20 It is possible to lower the z-axis plate 1938 from the top of the z-axis linear bearing 1942 until it is in the range of mm, preferably 5 mm. After plating the first metal layer on the wafer 1801, the z-axis plate 1938 can gradually move up according to the process method for the wafer 1801 for further plating.

To polish the wafer 1801, an exemplary process chamber removes copper uniformly and gradually from the plated copper wafer 1801 by applying current at different current densities for different locations on the wafer 1801. Methods for flow and current of process liquids will be based on the wafer profile and other user-defined requirements, depending on the particular application. User-defined requirements may include the number of runs for mass removal, the use of larger or smaller nozzles, or the thickness of the copper layer retained on the wafer. Typically, a wafer measurement metrology tool measures the thickness profile of copper plated on a specimen of wafer. The measurements will help create a current ratio table that can include the current ratio used for the polishing process at a given set point on the wafer. The data and generated current ratio table generate a metal film thickness profile, which profile can be further modified by user-defined requirements to formulate the profiled thickness of the wafer, current density, and flow rate during the polishing process.

The current density applied to the wafer 1801 can vary depending on the type of removal. For example, to remove the thick metal film on the wafer 1801, a higher current will usually be used. In order to remove the thin metal film, smaller currents will usually be used, allowing for a more controlled and precise control process.

In the following, an exemplary process or method for electropolishing a wafer comprising a relatively thick metal layer is described. Exemplary methods generally involve four or more processing steps. First, a step of removing a large portion of a thick layer of metal, such as copper, is carried out. Secondly, the endpoint detector 1828 measures the reflectance of the remaining copper layer to determine the set point for further polishing at a given location on the wafer 1801. This process recalculates the film thickness profile based on the reflectance reading. Third, this process removes a relatively thick layer of copper according to the new metal film thickness profile. Fourth, endpoint detector 1828 measures the reflectivity of copper to determine if wafer 1801 has been polished to the desired thickness and / or profile. The third and fourth processes may be repeated until wafer 1801 is polished to the desired thickness and / or profile.

However, if the endpoint detector 1828 determines that too much copper plating has been removed from the wafer 1801, for example in an initial removal process, the present invention includes an electroplating process that replats some areas on the surface of the wafer with copper. Understand that you may. Such electroplating processes may include a method of reversing the voltage for the nozzles in the nozzle block 1830 with a suitable electrolyte, such as CuSO ₄ + H ₄ SO ₄ + H ₂ O and the like. Exemplary electroplating apparatus and methods are disclosed in US Pat. No. 6,391,166.

Example Process Method

Step 1. When the chuck assembly 1930 moves along the x-direction to remove the layer of copper on the wafer 1801, the motor 1926 rotates the chuck assembly 1930 at a constant linear speed. The nozzles in the nozzle block 1830 can direct the process liquid to the wafer 1801 at a constant flow rate. The rotational speed of theta motor 1926 can be related to the linear travel distance and current density of rotating the chuck assembly 1930. The current ratio applied to the wafer 1801 may also be based on user-defined requirements and metal film thickness profiles. The example method can continue to extrapolate between the new current density and the new linear velocity at each data point for the linear movement of rotating the chuck assembly 1930. This method can be further recalculated using the new current ratio and linear velocity. The process drive system returns the chuck assembly 1930 to the starting position along the x-direction.

Step 2. The endpoint detector 1828 is copper plated of the wafer 1801 as the theta motor 1926 rotates the chuck assembly 1930 again at a constant linear speed while the chuck assembly moves back and forth along the x-direction. Measure the reflectance of the surface. This example records the reflectivity of the wafer 1801 and the corresponding linear distance of the chuck assembly at user-defined intervals. This example performs extrapolation of new data as part of the metal film thickness profile.

Step 3. Repeat Step 1 except that the current flow will be adjusted based on the reflectance of the endpoint detector 1828 with respect to the wafer 1801 at a given wafer location of linear distance.

Step 4. Repeat step 2. If the new reflectance measurement from the endpoint detector 1828 is greater than the preset value, repeat step 3.

During the exemplary polishing process, the chuck assembly 1930 can rotate in the following three modes.

1) Constant linear speed mode:

(One)

Where R is the horizontal distance between the nozzle and the wafer center.

C ₁ is constant, and

Is the rotational speed.

In actual control, R = 0 gives an infinite rotational speed; Therefore, equation (1) can be expressed as follows.

(2)

Where C ₂ is a constant set depending on the particular device and application.

2) Constant Rotational Speed Mode:

(3)

Where C ₃ is a constant set by the process method.

3) Constant centrifugal force mode:

(4)

Where V is the linear velocity, R is the horizontal distance between the nozzle and the wafer center, and C ₄ is a constant set depending on the particular apparatus and application.

Equation (4) is Can be converted to

(5)

Again, R = 0 is infinite rotational speed, In fact, equation (5) can be converted as follows.

(6)

Where C ₅ is a constant set depending on the particular device and application.

The horizontal or x-direction movement can be converted as follows.

(7)

here, Is the speed of rotation of the chuck assembly in the x-direction and R = 0 is infinite Equation (7) can be converted as follows.

(8)

Where C ₇ is a constant set depending on the particular device and application.

18 and 19 show a process drive assembly in which the chuck assembly 1930 moves along the x-direction, while the nozzle plate 1826, or both the chuck assembly 1930 and the nozzle plate 1826 during a process, is a particular application. Depending on the field, it can move along the x-direction.

20 illustrates an example nozzle 2054 that may be included in an example process chamber assembly. Exemplary nozzle 2054 includes an enhancement energy unit 2080 that can be mechanically connected or attached to nozzle 2054. This enhanced energy unit 2080 improves the agitation of the electrolyte solution 2081 on the surface of the metal film 2004, providing higher polishing rate, improved surface finish, and superior quality.

In one exemplary nozzle 2054, the energy enhancement unit 208 includes an ultrasonic or magnetic transducer. The electrolyte solution 2081 may be input from the side inlet 5200 of the nozzle 2054. The frequency of the ultrasonic transducer may range from 15 kHz to 100 Mega Hz to stir the electrolyte. The ultrasonic transducer may be made of ferroelectric ceramics such as barium titanate (LiTaO ₃ ), lead titanate, lead zirconate, and the like. The power of the ultrasonic transducer may be in the range of 0.01 to 1 W / cm 2.

In another example, energy enhancement unit 2080 may comprise a laser. For similar purposes as described above, the laser can be irradiated onto the metal surface during the electropolishing process. Such lasers are for example solid state lasers such as ruby lasers, Nd-glass lasers, or Nd: YAG (yttrium aluminium garnets, Y ₃ Al ₅ O ₁₂ ) lasers, He-Ne lasers, CO2 lasers, HF lasers. Gas laser such as laser or the like. The average power of such lasers can be in the range of 1 to 100 watts / cm 2 for continuous mode. In another example, the laser can be operated in pulse mode. The pulsed mode laser power can be significantly higher than the average mode power, as will be appreciated by those skilled in the art.

Such a laser may detect the film thickness of the metal film on the wafer 1004. In this example, the laser guided to the metal film stimulates the ultrasonic waves on the metal film. The thickness of the metal film 2004 may be measured via ultrasonic waves detected during the electropolishing process. The thickness of the metal film 2004 can be used to control the polishing rate by changing the current, the nozzle speed in the radial direction, and the like.

In another example, energy enhancement energy unit 2080 includes an infrared source for annealing the metal film 2004 during the polishing process. Infrared sources may provide additional options for controlling the surface temperature of the metal film during the polishing process. The power of the infrared source may be in the range of 1 to 100 w / cm 2. Infrared sources can also be used to anneal the metal film during the polishing process. Particle size and configuration are of great importance for determining copper interconnect electron-transfer performance and resistivity. Since temperature is a factor that determines the particle size and composition of the metal layer, infrared sensors can be used to detect the surface temperature of the metal film during the polishing process.

The infrared sensor can also be used to determine the temperature of the metal film 2004. By monitoring the temperature, it is possible to adjust the temperature during the polishing process by changing the infrared source power and changing the current density.

In another example, energy enhancement energy unit 2080 may include a magnetic field to focus the polishing flow on metal film 2004 during the polishing process. By focusing the polishing flow, it is possible to increase control of the polishing rate profile of the nozzle, which becomes increasingly important for relatively large diameter nozzles. The magnetic field can be generated in the direction of the electrolyte flow, ie perpendicular to the metal film surface. Magnets and electric magnets, superconductor coil driving magnets, etc. may be used to generate and focus the magnetic field.

As generally described above, it should be understood that other energy sources may be used, such as ultraviolet, X-ray, microwave sources, etc., to improve the performance of the electropolishing process.

Although exemplary chamber modules and processes have been described with respect to specific embodiments, examples, and applications, those skilled in the art will understand that various modifications and changes can be made without departing from the scope of the present invention.

Ⅴ. Electroplating Apparatus and Process

In another aspect of a semiconductor assembly, an electroplating apparatus and method for electroplating a semiconductor wafer can be included. In plating apparatus and processes, it is generally desirable to distribute the process fluid evenly over the surface of the wafer to plate a metal film of uniform thickness. In one exemplary embodiment, a shower head for a plating apparatus comprising a filter block that obstructs the underlying stream of electrolyte and distributes the process fluid more evenly through the channels of the shower head before emergence from the shower head. Is disclosed. By more evenly distributing the fluid through the channels, the same or approximately the same flow rate of electrolyte from each orifice of the shower head assembly increases, thereby increasing the uniformity of the electroplating process.

21 is an exploded view of an exemplary electroplating apparatus for plating semiconductor wafer 2102. The electroplating apparatus includes a half moon chamber 2104, a fixed shroud 2106, a plating shroud head assembly 2108, an outlet 2110, a liquid inlet 2112, an electrolyte through fitting 2114, a liquid through fitting 2116, Chamber tray 2118, bottom chamber window 2120, bottom chamber 2122, process chamber 2124, chamber window 2126, top cover assembly 2130, liquid inlet tubing 2132, electrode cable 2134 , And shaft 2136. Top cover assembly 2130 may be functionally similar to the example top cover assembly described above under the upper “process chamber”. The fixed shroud 2106 covers a wafer chuck (not shown), for example, to prevent electrolyte from splashing out of the chamber during the electroplating and rotary drying processes.

As shown in FIG. 21, the wafer 2102 is loaded into the electroplating apparatus through the half moon chamber 2104 to the wafer chuck of the top cover assembly 2130. To plate copper on the wafer 2102, the top cover assembly 2130 lowers the wafer 2102 and positions the wafer 2102 over the top of the plating shower head assembly 2108. In one exemplary plating process, the first metal layer portion while the gap between the wafer 2102 and the plating shower head assembly 2108 is in the range of about 0.1 mm to about 10 mm, or preferably within about 2 mm. Deposition is performed. The top cover assembly 2130 further raises the wafer 2102 by 2 mm to 5 mm, and the second layer deposition may be performed if a thicker layer of copper is deposited on the wafer.

Exemplary electroplating processes and sequences are described in US Pat. No. 6,391,166 (named Plating Apparatus and Method, filed Jan. 1999), US Patent Application 09/837902 (name: Plating Apparatus and Method, 2001.4). .18 characters) and US Patent Application Serial No. 09 / 837,911 (named Plating Apparatus and Method, filed 2001.4.18), all of which are incorporated herein by reference in their entirety.

22 is an exploded view of an exemplary shower head assembly 2108 for the plating process. The shower head assembly 2108 includes an outer channel ring 2202, a shower head top 2204, and a shower head 2206. 23 and 24 show exploded views of example shower heads configured for electroplating 300 mm wafers and 200 mm wafers, respectively. For use with a 200 mm wafer, simply replace the 300 mm outer channel ring 2302 with a 200 mm outer channel ring 2402, and replace the 300 mm shower head top 2304 with a 200 mm shower head top 2404. ). Thus, the shower head 2006 can be used for both 300 mm wafers and 200 mm wafers. Referring to FIG. 24, when the size of the wafer is reduced from 300 mm to 200 mm, the shroud head top 2404 may include fewer rings, and the outer channel ring 2402 may be smaller in diameter. Can be. However, it should be understood that the exemplary shower head may be configured for wafers of any size.

25A shows an enlarged view of an exemplary shower head. As shown in FIG. 25A, the shower head 2206 includes an electrode ring 2502, a nut 2504, an electrode connector 2506, an electrode outer cover 2508, a small inlet flare fitting 2510, and an inlet flare. It may include a fitting 2512, a plate filter block 2514, a shower head base 2516, a filter spacer 2518, and a plate filter ring 2520. Each electrode ring 2502 is fitted on top of a matching plate filter ring 2520 and by tightening the electrode ring 2502 by a nut 2504, an electrode connector 2506, and an electrode outer connector 2508. It is locked in place on the shower head base 2516. As shown in FIG. 21, each electrode is attached to an electrode external connector 2508 by an electrode cable 2314. Electrode ring 2502 is made of an anticorrosive metal or alloy, such as platinum, titanium coated titanium, or the like. The shower head base 2516 will have channels for electrolyte flow from the inlet flare fitting 2512 and from the small inlet play fitting 2510.

Referring again to FIG. 25A, the inlet flare fitting 2512 may be larger than the width of the channel in the shower head base 2516, and the inlet flare fitting may be secured on the same position for both 7-rings or 10 rings. none. All other small inlet flare fittings 2510 or inlet flare fittings 2512 and opposing filter blocks to secure the inlet flare fitting to the shear head base 2516 and to distribute the tension and weight evenly to the ring. 2514 is located on opposite halves of a circle (not shown with respect to filter block 2514). Similar to inlet flare fitting 2512, electrode ring 2502 is fitted over plate filter ring 2520 so that the electrode is positioned on the other half of the circle along with all other electrode rings.

25B illustrates an exploded view of plate filter block 2514 and plate filter ring 2520 joined together by filter spacer 2518 to form a liquid flow block assembly and to allow electrode ring 2502 to fit over liquid flow block assembly. Shows. An exemplary liquid flow block assembly may be positioned above the shroud head base 2516 with an inlet flare fitting 2512 at the center and below each plate filter block 2514 with an o-ring 2530 (not shown). will be. Each plate filter ring 2520 has an orifice having a narrow opening in the center of each orifice. Referring now to both FIGS. 25A and 25B, when the liquid flow block assembly and electrode ring 2502 are secured to the shower head base 2516, the bottom of the shower head base 2816 and the plate filter ring 2520. Channels are formed between them. The electrolyte will flow in from the inlet flare fitting 2512. The electrolyte stream will first strike the center of the plate filter block 2514 above the inlet and will be distributed throughout the channel. If the electrolyte rises in the channel, the electrolyte will flow evenly out of the orifice 2522 and reach the electrode ring 2502. The electrolyte will pass through the electrode ring 2502 and will flow uniformly to the surface of the wafer 2102 through the opening 2524 in the nozzle head 2004.

FIG. 25C shows the relationship between orifice 2522 and opening 2524 of the nozzle head at the bottom of shower head 2006. As shown in FIGS. 25C and 22, the shroud head top 2004 is stacked over the shroud head 2006 such that the opening 2524 is located between two orifices 2522. This staggered positioning allows the flow of electrolyte described above to flow evenly through each recess on the liquid block flow assembly. As shown in the top view of the shower head of FIG. 25D, an opening 2524 is disposed around the outer ring on the shower head top 2204 (or 2304 or 2404). These openings 2524 are also inside the circumferential ring on the shower head top 2204 and may be formed into any shape, such as a circle, an elongate shape, or the like, depending on the particular application. Referring to FIG. 24, the opening 2524 may be formed into an elongated circle created by forming three peripheral holes.

Without plate filter block 2514, inlet flare fitting 2512 can deliver electrolyte directly over the vicinity of the inlet flare fitting through one or more openings, resulting in an unbalanced distribution of electrolyte throughout the channel. Since the electrolyte flows from one inlet, it is difficult to control the liquid pressure of the electrolyte. Using a liquid flow block assembly, the exemplary apparatus provides better control of electrolytes for the deposition of metals, such as copper, because plate filter block 2514 disturbs the underlying stream of electrolytes and distributes electrolytes throughout the channel. to provide. Distributing electrolyte throughout the channel allows the same or nearly identical electrolyte to flow out of each orifice 2522 on the plate filter ring 2520. As shown in FIG. 25F, the electrolyte exits the electrode outer connector 2508 and flows out around the sides of the electrode ring 2502 through the shower head base 2516 and the plate filter ring 2520, and the shower It flows out through an opening 2524 on the head top 2004.

Although exemplary shower head devices have been described for specific embodiments, examples, and applications, those skilled in the art will understand that various modifications and changes can be made without departing from the present invention.

Ⅵ. Method and apparatus for flattening wafers

According to another aspect, a method and apparatus for planarizing a semiconductor wafer for a processing module, such as an electropolishing or electroplating apparatus, is disclosed. In general, during processing of the wafer, the major surface of the wafer is preferably parallel to the level surface of the processing chamber or tool. For example, the alignment of the wafer in the processing apparatus increases the uniformity of the polishing or plating process.

26A and 26B show example leveling tools that may be used to measure the parallelism of the wafer 2602 within ± 0.001 inches for a processing apparatus such as a processing chamber, for example. As shown in FIGS. 26A and 26B, the leveling device typically includes a leveling tool 2604, a ground line 2610, a signal line 1612, a control system 2614 and a chuck 2616.

An exemplary chuck is disclosed in U.S. Patent No. 6,248,222B1, entitled "Methods and Apparatus for Holding and Positioning SEMICONDUCTOR WORKPIECES" for holding and positioning semiconductor workpieces during electropolishing and / or electroplating of semiconductor workpieces. DURING ELECTROPOLISHING AND / OR ELECTROPLATING OF THE WORKPIECES ", filed Sep. 1999, and US Pat. No. 6,495,007 (name of the invention:" Keeping semiconductor workpieces during electropolishing and / or electroplating of semiconductor workpieces and METHOD AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND / OR ELECTROPLATING OF THE WORKPIECES ", filed Mar. 2001, all of which are incorporated herein by reference.

Referring to FIGS. 26A and 26B, the chuck 2616 holds the wafer 2602 during the semiconductor electropolishing and / or electroplating process. In order to provide a more uniform process of the electropolishing and / or electroplating process, the wafer 2602 is positioned parallel or nearly parallel with the processing chamber 2630, in particular with the plating head or polishing nozzle (not shown) of the processing apparatus. Let's do it. Leveling tool 2604 may be located inside process chamber 2630 to provide increased alignment of wafer 2602.

Leveling tool 2604 may include three sensors 2606 and corresponding signal lines 2612. When the leveling tool 2604 is under the chuck and the wafer 2602 is lowered below the leveling tool 2604, the signal line 2612 (via the sensor 2606) is thinned on the surface of the wafer 2602. Provides connection to the control system through the metal layer. Ground line 2610 from control system 2614 is connected on a metal layer of wafer 2602. When sensor 2606 is in contact with a thin metal layer, a circuit is completed between sensor 2606 and ground line 2610 that can be measured by control system 2614.

In addition, as shown in FIG. 26B, the leveling tool 2604 positions the leveling tool 2604 near the surface of the wafer 2602 and adjusts the parallelism of the polishing nozzles and the wafer 2602 in the chuck 2616. It may comprise a support for use in the measurement.

26C shows a cross-sectional view of an example sensor 2606. Sensor 2606 includes a holder 2626, a set screw 2628, a pin adjuster 2620, a contact screw 2622 and a pin 2624. Signal line 2602 is connected to sensor 2606 through contact screw 2622. Holder 2626, pin adjuster 2620 and pin 2624 may be made of a metal or alloy such as stainless steel, titanium, tantalum or gold.

In one exemplary process for measuring alignment or parallelism of wafer 2602 in relation to a process tool, chuck 2616 is leveling tool 2604 until pin 2624 is in contact with a conductive surface of wafer 2602. Go down towards you. The contact completes an electrical circuit, which includes a signal line 2612, a ground line 2610, and a control system 2614, which supplies a signal to the control system 2614. The control system 2614 determines the distance from the original position of the chuck 2616 to the position of the pin at the moment of contact.

The chuck 2616 continues to descend until the second sensor 2606 and the third sensor 2606 contact the surface of the wafer 2602. The corresponding distances for the two sensor contacts are obtained and the measurement process ends.

As shown in FIG. 27, an example process may include a software interface, which shows the measured distance at the moment of contact with each sensor 2606. This interface can also show the location of the sensor 2606. The smaller the difference between the maximum and minimum distances of the measured distance, the closer the wafers 2602 are aligned in a closer or parallel relationship. This data can be used to adjust the chuck 2616 and eventually position the wafer 2602. After the adjustment has been made, the measurement cycle may be repeated until the difference between the maximum and minimum values of the measured distance is within design conditions such as ± 0.001 inches, depending on the particular application.

Although exemplary wafer alignment methods and systems have been described in connection with specific embodiments, examples, and applications, those skilled in the art will understand that various modifications and changes can be made without departing from the present invention.

The foregoing descriptions of various devices, methods, and systems are provided to illustrate exemplary embodiments and are not intended to be limiting. Those skilled in the art will understand that various changes and modifications can be made within the scope of the invention. For example, different exemplary electropolishing and electroplating devices, such as cleaning chambers, light sensors, liquid delivery systems, endpoint detectors, and the like, may be used together in one process assembly, or may be used separately to provide electropolishing and / or electrolysis. Improve plating systems and methods. Accordingly, the invention is defined by the appended claims and should not be limited to the foregoing description.

Claims (137)

A storage module for storing a semiconductor wafer, A plurality of vertically stacked processing modules for carrying out at least one of electropolishing of the wafer and electroplating of the wafer; A cleaning module, and A robot for transferring the wafer between the storage module, the processing module and the cleaning module, Divided into two or more sections characterized by separate frames, An apparatus for processing one or more semiconductor wafers. The method of claim 1, Further comprising a pre-align module for aligning the wafer prior to processing; An apparatus for processing one or more semiconductor wafers. The method of claim 1, The robot comprises one or more end effectors for picking up and transporting the wafer, An apparatus for processing one or more semiconductor wafers. The method of claim 1, The robot is removable by rolling or sliding from one of the two or more sections, An apparatus for processing one or more semiconductor wafers. The method of claim 1, The robot, A first end effector for transferring the wafer to the processing module, and A second end effector for transferring the wafer from the processing module, An apparatus for processing one or more semiconductor wafers. The method of claim 1, Further comprising a liquid delivery system for delivering process liquid to the processing module, An apparatus for processing one or more semiconductor wafers. The method of claim 6, The liquid delivery system includes a surge suppressor An apparatus for processing one or more semiconductor wafers. The method of claim 6, The liquid delivery system includes a controller for adjusting the flow rate of the process liquid, An apparatus for processing one or more semiconductor wafers. The method of claim 6, The liquid delivery system is held in a containment tray, An apparatus for processing one or more semiconductor wafers. The method of claim 1, A discharge pipe for controlling the gas from the processing module, An apparatus for processing one or more semiconductor wafers. A method for carrying out at least one of electropolishing and electroplating of a semiconductor wafer in a process assembly, the method comprising: Transferring the wafer to one of the plurality of processing modules stacked by the first end effector, Electropolishing or electroplating the wafer in the processing module; Transferring the wafer from the processing module to a cleaning module by a second end effector, and Cleaning the wafer in the cleaning module; Wherein said process assembly is divided into two or more sections characterized by separate frames, A method of carrying out one or more of electropolishing and electroplating of semiconductor wafers in a process assembly. The method of claim 11, Transporting the wafer includes using a robot configured to slide or roll out of the process assembly, A method of carrying out one or more of electropolishing and electroplating of semiconductor wafers in a process assembly. The method of claim 11, Delivering liquid through said supply line to said processing module, wherein said supply line is associated with a surge suppressor, A method of carrying out one or more of electropolishing and electroplating of semiconductor wafers in a process assembly. The method of claim 11, Further comprising removing gas from the processing module through an exhaust system; A method of carrying out one or more of electropolishing and electroplating of semiconductor wafers in a process assembly. An opening located on one side of the end effector member, A passage connected to the opening for introducing gas from the opening, and A cup disposed around the opening, configured to create a temporary seal between the end effector and the semiconductor wafer when gas is introduced from the opening; Semiconductor wafer holding device. The method of claim 15, Further comprising a cap having a groove formed therein and disposed above the opening, Semiconductor wafer holding device. The method of claim 16, The cap is formed in a circular shape, Semiconductor wafer holding device. The method of claim 15, Further comprising at least two openings connected to the vacuum passage, Semiconductor wafer holding device. The method of claim 15, Further comprising at least two openings connected to the vacuum passage within one cup, Semiconductor wafer holding device. The method of claim 15, Wherein the cup comprises a flexible material, Semiconductor wafer holding device. The method of claim 15, Wherein the cup comprises an elastomeric material, Semiconductor wafer holding device. The method of claim 15, The cup extending away from the surface of the end effector member, Semiconductor wafer holding device. The method of claim 15, The cup is shaped like a circle, Semiconductor wafer holding device. The method of claim 15, The cup is shaped into a long circle, Semiconductor wafer holding device. The method of claim 15, The cup is shaped like a horseshoe, Semiconductor wafer holding device. The method of claim 15, The end effector is mechanically connected to the robot and the cup is disposed at the distal end of the end effector, Semiconductor wafer holding device. The method of claim 15, The distal end of the end effector is horseshoe-shaped, Semiconductor wafer holding device. The method of claim 15, The passage of the vacuum is integrally formed with the body of the end effector, Semiconductor wafer holding device. The method of claim 15, The passage of the vacuum is connected to a vacuum source, Semiconductor wafer holding device. The method of claim 15, The passage of the vacuum is further connected to a gas source for introducing gas into the passage of the vacuum, Semiconductor wafer holding device. Positioning the end effector in proximity to the major surface of the semiconductor wafer; Introducing a flexible cup disposed on a major surface of the end effector facing the major surface of the wafer, and Creating a temporary seal between the cup of vacuum and the wafer, Method of holding a semiconductor wafer. The method of claim 31, wherein The flexible cup is adjacent to the upper major surface of the wafer and is sufficiently introduced to hold the wafer against gravity. Method of holding a semiconductor wafer. The method of claim 31, wherein The flexible cup is adjacent to the lower major surface of the wafer and introduced at a lower pressure than the ambient pressure, Method of holding a semiconductor wafer. The method of claim 31, wherein The flexible cup is of circular shape, Method of holding a semiconductor wafer. The method of claim 31, wherein Introducing gas into the flexible cup to release the wafer; Method of holding a semiconductor wafer. The method of claim 31, wherein Wherein the flexible cup is introduced through an opening formed in the cavity, Method of holding a semiconductor wafer. The method of claim 31, wherein The flexible cup includes a cap disposed over the opening, the cap having a groove formed therein, Method of holding a semiconductor wafer. A wafer edge clean assembly comprising a nozzle head configured to supply liquid and gas to a major surface of the semiconductor wafer, The liquid is supplied adjacent to an outer edge of the major surface of the wafer, and The gas is supplied radially inward of the position at which the liquid is supplied, Cleaning device for semiconductor wafers. The method of claim 38, The gas and liquid are supplied from a plurality of adjacent nozzles, Cleaning device for semiconductor wafers. The method of claim 38, The gas comprises nitrogen gas and the liquid comprises a metal etching chemical, Cleaning device for semiconductor wafers. The method of claim 38, The nozzle is configured to supply the gas to prevent the liquid from developing radially inwardly on the major surface of the wafer, Cleaning device for semiconductor wafers. The method of claim 38, The nozzle is configured to supply gas in a curtain shape to prevent the liquid from crossing the gas, Cleaning device for semiconductor wafers. The method of claim 38, The nozzle comprises a horizontal span parallel to the major surface of the wafer, thereby forming a gas barrier between the horizontal span and the opposing major surface of the wafer, Cleaning device for semiconductor wafers. The method of claim 43, The distance between the horizontal span and the major surface of the wafer is approximately 0.1 mm to 2.0 mm Cleaning device for semiconductor wafers. The method of claim 43, The distance between the horizontal pan and the main surface of the wafer is approximately 1.5 mm, Cleaning device for semiconductor wafers. The method of claim 38, Further comprising a chuck for rotating the wafer adjacent the nozzle, Cleaning device for semiconductor wafers. The method of claim 46, The chuck assembly includes a positioner configured to hold the wafer as the chuck rotates, Cleaning device for semiconductor wafers. The method of claim 47, The positioner includes a first portion and a second portion that are mechanically connected, wherein the first portion moves outwardly and the second portion moves inwardly to secure the wafer during rotation. Having a mass greater than the second portion so that Cleaning device for semiconductor wafers. 49. The method of claim 48 wherein The positioner comprises an axis of rotation, the first portion being below the axis of rotation and the second axis being located above the axis of rotation, Cleaning device for semiconductor wafers. Rotating the semiconductor wafer about a central axis; Directing fluid to the major surface of the wafer; Comprising an edge clean process comprising guiding a gas to a major surface of the wafer located radially inward adjacent the location where the etchant is delivered, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein The gas reduces the potential for the fluid to flow inward radially on the semiconductor wafer, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein The gas and liquid are supplied simultaneously, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein The gas is delivered to the wafer prior to delivering the fluid to the wafer and during the delivery of the fluid to the wafer, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein The gas is delivered to the wafer during the process of delivering the fluid to the wafer and after the process of delivering the fluid to the wafer, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein The gas comprises nitrogen and the liquid comprises a metal etching chemical, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein The liquid is supplied to an inclined region on the major surface of the wafer, Method for cleaning semiconductor wafers. The method of claim 56, wherein The gas is supplied to a radially inner edge of the inclined region, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein The gas is supplied to an area adjacent to the location where the liquid is supplied, the area having a width in the radial direction and a length in the circumferential direction to reduce the potential of the liquid to flow inward radially on the wafer, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein The chuck rotates the wafer at approximately 50 to 500 rpm during the edge cleaning process, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein The chuck rotates the wafer at approximately 350 rpm during the edge cleaning process, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein Supplying DI water to both major surfaces of the wafer, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein Drying the wafer by rotating the wafer at approximately 1000 to 3000 rpm and supplying a stream of gas to the major surface of the wafer, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein Guiding the liquid behind the wafer at 1/3 intervals, while vibrating the wafer such that the liquid is not in direct contact with the positioner holding the wafer; Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein Guiding the liquid behind the wafer with a pulse such that the liquid does not directly contact the positioner holding the wafer, Method for cleaning semiconductor wafers. 51. The method of claim 50 wherein Rotating the chuck holding the wafer at a sufficient acceleration so that the wafer is shifted with respect to the chuck and repeating the cleaning process; Method for cleaning semiconductor wafers. Rotating the semiconductor wafer located on the chuck; Measuring the properties of the major surface of the wafer with sensors as the wafer rotates, and Determining whether the wafer is correctly positioned based on the measured characteristic, Wafer positioning method on chuck. The method of claim 66, wherein The sensor is an optical sensor for measuring the reflectance of the light emitted from the surface of the wafer, Wafer positioning method on chuck. The method of claim 66, wherein Determining that the wafer is not correctly positioned on the chuck if the reflectance changes below a threshold, Wafer positioning method on chuck. The method of claim 66, wherein The sensor is a proximity sensor measuring the distance between the surface of the wafer and the sensor, Wafer positioning method on chuck. The method of claim 66, wherein The sensor is an acoustic sensor, Wafer positioning method on chuck. The method of claim 66, wherein The sensor is a eddy current sensor, Wafer positioning method on chuck. A chuck assembly positioned on the wafer opposite a processing nozzle configured to spray processing liquid onto a major surface of the semiconductor wafer, the chuck assembly translating in a first direction relative to the processing nozzle when processing the wafer; A shroud mechanically coupled to the chuck assembly to translate with the chuck assembly, Process chamber for electropolishing or electroplating processes of semiconductor wafers. The method of claim 72, The shroud is magnetically connected to the chuck assembly, Process chamber for electropolishing or electroplating processes of semiconductor wafers. The method of claim 72, The chuck assembly translates in a second direction perpendicular to the first direction to adjust the position at which liquid is injected onto the wafer, Process chamber for electropolishing or electroplating processes of semiconductor wafers. The method of claim 72, During the electropolishing process, the chuck assembly positions the major surface of the wafer at a distance of approximately 0.5 mm to 10 mm from the nozzle, Process chamber for electropolishing or electroplating processes of semiconductor wafers. 76. The method of claim 75 wherein The distance is approximately 5 mm, Process chamber for electropolishing or electroplating processes of semiconductor wafers. The method of claim 72, During the electroplating process, the chuck assembly positions the major surface of the wafer at a distance of approximately 0.5 mm to 20 mm from the nozzle, Process chamber for electropolishing or electroplating processes of semiconductor wafers. 78. The method of claim 77 wherein The distance is approximately 5 mm, Process chamber for electropolishing or electroplating processes of semiconductor wafers. The method of claim 72, Further comprising an end-point detector and an optical sensor configured to measure a metal layer on the major surface of the wafer, Process chamber for electropolishing or electroplating processes of semiconductor wafers. The method of claim 72, The chuck assembly is magnetically connected to the process chamber, Process chamber for electropolishing or electroplating processes of semiconductor wafers. 81. The method of claim 80, The chuck assembly is disconnectable from the process chamber, Process chamber for electropolishing or electroplating processes of semiconductor wafers. A nozzle for directing a stream of processing liquid, An energy element configured to enhance agitation of the processing liquid on the metal thin film surface, Electropolishing or electroplating apparatus. 83. The method of claim 82, The energy element is mechanically connected to the nozzle, Electropolishing or electroplating apparatus. 83. The method of claim 82, The energy element comprises one or more of an ultrasonic transducer, a magnetasonic transducer, a laser source, an infrared heat source, a microwave source and a magnetic source, Electropolishing or electroplating apparatus. 83. The method of claim 82, The energy component comprises an ultrasonic transducer configured to operate in the range of 15 kHz to 100 Mega Hz. Electropolishing or electroplating apparatus. 83. The method of claim 82, The energy element comprises a laser configured to operate at 1 to 100 W / cm 2, the laser being directed to the surface of the metal film on the wafer, Electropolishing or electroplating apparatus. 83. The method of claim 82, Determining the metal film thickness by stimulating ultrasonic waves with a laser, Electropolishing or electroplating apparatus. 83. The method of claim 82, The energy element comprises an infrared source configured to operate at 1 to 100 W / cm 2, the infrared source being directed to the surface of the metal film on the wafer, Electropolishing or electroplating apparatus. 83. The method of claim 82, Further comprising an infrared sensor for measuring the surface temperature of the surface of the metal film, Electropolishing or electroplating apparatus. 83. The method of claim 82, The energy element comprises a magnetic source configured to focus a current in a process fluid at a surface of a metal film on a wafer Electropolishing or electroplating apparatus. Rotating a wafer chuck holding the wafer, Directing a stream of processing liquid to the metal layer on the surface of the wafer; Translating the wafer relative to the stream of processing liquid; Translating the shroud with the wafer, The shroud and the wafer are mechanically connected, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein The shroud and wafer chuck are magnetically connected and disconnectable, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein The wafer translates in a direction parallel to the main surface of the wafer and rotates at a constant linear velocity, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein Measuring the reflectance of the metal layer by an end-point detector, and generating a metal thin film thickness profile, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein Adjusting the current flow based on the determined metal thin film thickness profile, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein The electropolishing process, a) determining a desired thickness of the metal film on the wafer, b) removing a portion of the metal film on the wafer; c) measuring the thickness of the metal film; d) if the thickness of the metal film is greater than the desired thickness, repeating steps b), c) and d) until the desired thickness is measured; A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 97. The method of claim 96, The metal film is measured by an endpoint detector, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 97. The method of claim 96, The metal film thickness is determined by measuring the ultrasonic wave generated by guiding a laser to the surface of the metal film, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 97. The method of claim 96, if it is determined in step c) that the thickness of the metal film is too thin, further comprising electroplating the wafer, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein In the electropolishing process, the rotational speed of the chuck is varied with respect to the linear travel distance between the wafer and a nozzle parallel to the major surface of the wafer. A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein In the electropolishing process, the rotational speed of the chuck is varied with respect to the current density of the electropolishing process liquid, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein In the electropolishing process, the rotational speed of the chuck is varied with respect to the measured thickness of the metal film, the desired thickness profile, and the position of the wafer being polished. A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein The chuck rotates in a constant linear velocity mode, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein The chuck rotates in a constant rotation mode, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. 92. The method of claim 91 wherein The chuck rotates in a constant centrifugal force mode, A method of electropolishing or electroplating a metal layer on a semiconductor wafer. An inlet for receiving processing liquid, A channel connected to said inlet and disposed between said inlet and a plurality of orifices, and A shower head for injecting processing liquid, the filter element comprising: Wherein the filter element is disposed within the channel to distribute processing liquid entering the inlet throughout the channel and to flow uniformly from the plurality of orifices, Device for electroplating wafers. 107. The method of claim 106, A plurality of channels, at least one inlet associated with each channel, the plurality of channels disposed between the plurality of inlets and the plurality of orifices, Further comprising a plurality of filter elements for distributing said processing fluid across said each channel, Device for electroplating wafers. 107. The method of claim 106, The filter element is disposed opposite the inlet; Device for electroplating wafers. 107. The method of claim 106, The filter element is a blocker plate disposed opposite the inlet; Device for electroplating wafers. 107. The method of claim 106, The shower head is configured for 300 mm wafers or 200 mm wafers, Device for electroplating wafers. 107. The method of claim 106, Further comprising an electrode ring disposed adjacent the plurality of orifices and external to the channel, Device for electroplating wafers. 112. The method of claim 111, wherein The electrode ring comprises an anticorrosive metal or alloy, Device for electroplating wafers. 112. The method of claim 111, wherein Further comprising a nozzle head having a plurality of nozzle openings positioned above the shower head electrode ring, Device for electroplating wafers. 112. The method of claim 112, The plurality of nozzle openings are offset relative to the plurality of orifices, Device for electroplating wafers. Receiving the processing liquid through an inlet into a channel comprising a plurality of openings for injecting the processing liquid, and Distributing the processing liquid received through the inlet throughout the channel to uniformly pass through the plurality of orifices; Electroplating method of semiconductor wafer. 116. The method of claim 115, Receiving process liquid in a plurality of channels disposed between the plurality of inlets and the plurality of orifices with at least one inlet associated with each channel; and Further comprising distributing the received process liquid over each of said channels; Electroplating method of semiconductor wafer. 116. The method of claim 115, The process liquid is an electrolyte, Electroplating method of semiconductor wafer. 116. The method of claim 115, The process liquid is distributed by a filter element disposed opposite the inlet; Electroplating method of semiconductor wafer. 119. The method of claim 118 wherein The filter element is a blocker plate, Electroplating method of semiconductor wafer. 116. The method of claim 115, Further comprising electroplating a 300 mm wafer or a 200 mm wafer, Electroplating method of semiconductor wafer. 116. The method of claim 115, Passing the process fluid over an electrode ring after the process fluid is ejected from the plurality of orifices; Electroplating method of semiconductor wafer. 128. The method of claim 121, wherein The electrode ring is an anticorrosive metal or alloy, Electroplating method of semiconductor wafer. 128. The method of claim 121, wherein Passing the process liquid through a nozzle head including a plurality of nozzle openings, wherein the nozzle head is positioned above the electrode ring, Electroplating method of semiconductor wafer. 126. The method of claim 123, wherein Offsetting the plurality of nozzle openings with respect to the plurality of orifices, Electroplating method of semiconductor wafer. 126. The method of claim 123, wherein The process liquid flow is distributed within the channel by the filter element and flows uniformly from the plurality of orifices through the electrode ring and through the nozzle opening to the surface of the wafer, Electroplating method of semiconductor wafer. Three sensors located substantially in one plane, and A chuck configured to hold a wafer opposite the three sensors, The three sensors are configured to measure a distance of the wafer surface relative to the sensor, An apparatus for leveling semiconductor wafers within a processing apparatus. 127. The method of claim 126, wherein The plane is parallel to a portion of the processing apparatus, An apparatus for leveling semiconductor wafers within a processing apparatus. 127. The method of claim 126, wherein The plane associated with the processing nozzle, An apparatus for leveling semiconductor wafers within a processing apparatus. 127. The method of claim 126, wherein The sensor including a conductive line completing the circuit with a signal line connected with the sensor, a metal layer on the surface of the wafer, and a ground line connected with the wafer, An apparatus for leveling semiconductor wafers within a processing apparatus. 131. The method of claim 129 wherein And a control system for measuring a distance offset of the wafer based on a signal generated when the circuit is completed, An apparatus for leveling semiconductor wafers within a processing apparatus. 131. The method of claim 130, The control system adjusts the chuck based on the distance measurement, An apparatus for leveling semiconductor wafers within a processing apparatus. Determining a predetermined alignment plane of the wafer, Determining the position of the wafer at three positions relative to a predetermined alignment plane of the wafer, and Adjusting the wafer based on the determined position of the wafer and a predetermined alignment plane, A method of leveling wafers in a processing apparatus. 133. The method of claim 132, The plane is parallel to a portion of the processing apparatus, A method of leveling wafers in a processing apparatus. 133. The method of claim 132, The plane associated with the processing nozzle, A method of leveling wafers in a processing apparatus. 133. The method of claim 132, Determining the position of the wafer includes measuring the distance by three sensors, each sensor comprising a signal line connected to the sensor, a metal layer on the surface of the wafer, and the metal layer of the wafer. With a conductive pin that completes the circuit with the connected ground line, A method of leveling wafers in a processing apparatus. 136. The method of claim 135, wherein The control system measures the distance offset from the plane based on the signal generated when the circuit is completed, A method of leveling wafers in a processing apparatus. 136. The method of claim 136, Adjusting the wafer further includes moving the chuck holding the wafer based on the distance measurement. A method of leveling wafers in a processing apparatus.