JP7422586B2 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- JP7422586B2 JP7422586B2 JP2020059587A JP2020059587A JP7422586B2 JP 7422586 B2 JP7422586 B2 JP 7422586B2 JP 2020059587 A JP2020059587 A JP 2020059587A JP 2020059587 A JP2020059587 A JP 2020059587A JP 7422586 B2 JP7422586 B2 JP 7422586B2
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- 239000000758 substrate Substances 0.000 title claims description 99
- 238000003672 processing method Methods 0.000 title claims description 5
- 239000007788 liquid Substances 0.000 claims description 220
- 230000002093 peripheral effect Effects 0.000 claims description 35
- 238000007599 discharging Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 92
- 230000004048 modification Effects 0.000 description 52
- 238000012986 modification Methods 0.000 description 52
- 239000010408 film Substances 0.000 description 50
- 238000010586 diagram Methods 0.000 description 36
- 229910000510 noble metal Inorganic materials 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 15
- 229910052707 ruthenium Inorganic materials 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Description
最初に、図1を参照しながら、実施形態に係る基板処理システム1の概略構成について説明する。図1は、実施形態に係る基板処理システム1の概略構成を示す図である。なお、基板処理システム1は、洗浄装置の一例である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
次に、処理ユニット16の構成について、図2を参照しながら説明する。図2は、処理ユニット16の具体的な構成例を示す模式図である。図2に示すように、処理ユニット16は、チャンバ20と、基板回転部30と、処理液供給部40と、回収カップ50とを備える。また、詳細は後述するが、処理ユニット16は、さらに電圧印加部60(図3参照)を備える。
次に、実施形態に係る処理ユニット16内の処理液供給部40および電圧印加部60の構成について、図3~図5を参照しながら説明する。図3は、実施形態に係る処理ユニット16内の処理液供給部40および電圧印加部60の構成を示す図である。
つづいて、実施形態の各種変形例について、図6~図18を参照しながら説明する。なお、以下の各種変形例において、実施形態と同一の部位には同一の符号を付することにより重複する説明を省略する。
E≧1240/λ ・・・(1)
つづいて、実施形態に係る基板処理の手順について、図19を参照しながら説明する。図19は、実施形態に係る基板処理システム1が実行する基板処理の手順を示すフローチャートである。
Wa 周縁部
1 基板処理システム(基板処理装置の一例)
16 処理ユニット
18 制御部
30 基板回転部
40 処理液供給部
41a、41b ノズル
41c 液保持部(液保持部材の一例)
60 電圧印加部
61 陽極
62 陰極
66 多孔質体(液保持部材の一例)
70 ガスノズル
80 光源
L 処理液
G ギャップ
Claims (8)
- 基板を保持して回転させる基板回転部と、
前記基板回転部に保持される前記基板に処理液を供給する処理液供給部と、
前記処理液供給部から供給される前記処理液に電圧を印加する陽極および陰極と、
ガスを吐出するガスノズルと、
各部を制御する制御部と、
を備え、
前記制御部は、
前記陽極と前記陰極とをそれぞれ独立して前記処理液に接触させ、前記基板の回転時に、前記ガスノズルから前記陽極に接触する前記処理液と前記陰極に接触する前記処理液との間にガスを吐出し、前記陽極に接触する前記処理液と前記陰極に接触する前記処理液とが離間された状態で前記基板に供給されるように制御する
基板処理装置。 - 前記陽極および前記陰極の少なくとも一方は、液体を保持可能に構成される液保持部材に保持される前記処理液に直接または間接的に接触する
請求項1に記載の基板処理装置。 - 前記液保持部材は、多孔質体で構成される
請求項2に記載の基板処理装置。 - 前記処理液に光を照射する光源をさらに備える
請求項1~3のいずれか一つに記載の基板処理装置。 - 前記光源は、前記陽極に接触する前記処理液に光を照射する
請求項4に記載の基板処理装置。 - 前記光源は、前記処理液に紫外光を照射する
請求項4または5に記載の基板処理装置。 - 前記制御部は、前記陽極に接触する前記処理液と前記陰極に接触する前記処理液とがいずれも前記基板の周縁部に供給されるように制御する
請求項1~6のいずれか一つに記載の基板処理装置。 - 基板を保持して回転させる工程と、
前記基板に処理液を供給する工程と、
陽極および陰極をそれぞれ独立して前記処理液に接触させる工程と、
前記陽極に接触する前記処理液と前記陰極に接触する前記処理液との間にガスを吐出し、前記陽極に接触する前記処理液と前記陰極に接触する前記処理液とを離間させる工程と、
前記陽極および前記陰極から前記処理液に電圧を印加する工程と、
を含む基板処理方法。
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