CA2479794A1 - Electropolishing and/or electroplating apparatus and methods - Google Patents
Electropolishing and/or electroplating apparatus and methods Download PDFInfo
- Publication number
- CA2479794A1 CA2479794A1 CA002479794A CA2479794A CA2479794A1 CA 2479794 A1 CA2479794 A1 CA 2479794A1 CA 002479794 A CA002479794 A CA 002479794A CA 2479794 A CA2479794 A CA 2479794A CA 2479794 A1 CA2479794 A1 CA 2479794A1
- Authority
- CA
- Canada
- Prior art keywords
- wafer
- chuck
- liquid
- further including
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 279
- 238000009713 electroplating Methods 0.000 title claims abstract description 71
- 235000012431 wafers Nutrition 0.000 claims abstract description 428
- 230000008569 process Effects 0.000 claims abstract description 165
- 238000004140 cleaning Methods 0.000 claims abstract description 98
- 229910052751 metal Inorganic materials 0.000 claims abstract description 87
- 239000002184 metal Substances 0.000 claims abstract description 87
- 239000007788 liquid Substances 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 239000012636 effector Substances 0.000 claims description 94
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 72
- 238000012545 processing Methods 0.000 claims description 62
- 239000000126 substance Substances 0.000 claims description 45
- 239000007789 gas Substances 0.000 claims description 43
- 239000012530 fluid Substances 0.000 claims description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 36
- 239000003792 electrolyte Substances 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000002310 reflectometry Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 6
- 230000001133 acceleration Effects 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 230000005484 gravity Effects 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 238000003892 spreading Methods 0.000 claims description 4
- 230000007480 spreading Effects 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000013019 agitation Methods 0.000 claims description 2
- 229920001971 elastomer Polymers 0.000 claims description 2
- 239000000806 elastomer Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- 230000004936 stimulating effect Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 description 33
- 239000010408 film Substances 0.000 description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 24
- 238000007747 plating Methods 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 22
- 239000010949 copper Substances 0.000 description 22
- 238000005498 polishing Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 11
- 238000007517 polishing process Methods 0.000 description 8
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 238000000429 assembly Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 241001272720 Medialuna californiensis Species 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910000619 316 stainless steel Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229920002449 FKM Polymers 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Robotics (AREA)
- Electroplating Methods And Accessories (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (17)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37095602P | 2002-04-08 | 2002-04-08 | |
| US37092902P | 2002-04-08 | 2002-04-08 | |
| US37095502P | 2002-04-08 | 2002-04-08 | |
| US37091902P | 2002-04-08 | 2002-04-08 | |
| US60/370,919 | 2002-04-08 | ||
| US60/370,929 | 2002-04-08 | ||
| US60/370,955 | 2002-04-08 | ||
| US60/370,956 | 2002-04-08 | ||
| US37256702P | 2002-04-14 | 2002-04-14 | |
| US37254202P | 2002-04-14 | 2002-04-14 | |
| US37256602P | 2002-04-14 | 2002-04-14 | |
| US60/372,566 | 2002-04-14 | ||
| US60/372,567 | 2002-04-14 | ||
| US60/372,542 | 2002-04-14 | ||
| US39046002P | 2002-06-21 | 2002-06-21 | |
| US60/390,460 | 2002-06-21 | ||
| PCT/US2003/010725 WO2003087436A1 (en) | 2002-04-08 | 2003-04-08 | Electropolishing and/or electroplating apparatus and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2479794A1 true CA2479794A1 (en) | 2003-10-23 |
Family
ID=29255769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002479794A Abandoned CA2479794A1 (en) | 2002-04-08 | 2003-04-08 | Electropolishing and/or electroplating apparatus and methods |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20050218003A1 (ja) |
| EP (1) | EP1492907A4 (ja) |
| JP (5) | JP2005522585A (ja) |
| KR (1) | KR20040099407A (ja) |
| CN (2) | CN100430526C (ja) |
| AU (1) | AU2003226319A1 (ja) |
| CA (1) | CA2479794A1 (ja) |
| SG (1) | SG159384A1 (ja) |
| TW (1) | TWI274393B (ja) |
| WO (1) | WO2003087436A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114990549A (zh) * | 2022-05-30 | 2022-09-02 | 高红霞 | 一种汽车冲压模具铸件表面拉毛装置及方法 |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7997288B2 (en) | 2002-09-30 | 2011-08-16 | Lam Research Corporation | Single phase proximity head having a controlled meniscus for treating a substrate |
| US7675000B2 (en) | 2003-06-24 | 2010-03-09 | Lam Research Corporation | System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology |
| US8062471B2 (en) | 2004-03-31 | 2011-11-22 | Lam Research Corporation | Proximity head heating method and apparatus |
| CN100419121C (zh) * | 2004-05-12 | 2008-09-17 | 鸿富锦精密工业（深圳）有限公司 | 湿蚀刻设备 |
| JP5155517B2 (ja) | 2005-04-21 | 2013-03-06 | 株式会社荏原製作所 | ウエハ受渡装置及びポリッシング装置 |
| US7928366B2 (en) | 2006-10-06 | 2011-04-19 | Lam Research Corporation | Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access |
| EP2360722B1 (en) * | 2006-08-04 | 2012-12-05 | E. I. du Pont de Nemours and Company | Assembly for depositing air sensitive material |
| US8474468B2 (en) * | 2006-09-30 | 2013-07-02 | Tokyo Electron Limited | Apparatus and method for thermally processing a substrate with a heated liquid |
| US20080107509A1 (en) * | 2006-11-07 | 2008-05-08 | Whitcomb Preston X | Vacuum end effector for handling highly shaped substrates |
| EP2097342B1 (de) * | 2006-11-27 | 2023-03-22 | Brooks CCS RS AG | Transfervorrichtung für eine überkopf-transportanlage |
| US8146902B2 (en) | 2006-12-21 | 2012-04-03 | Lam Research Corporation | Hybrid composite wafer carrier for wet clean equipment |
| US7479463B2 (en) * | 2007-03-09 | 2009-01-20 | Tokyo Electron Limited | Method for heating a chemically amplified resist layer carried on a rotating substrate |
| US9383138B2 (en) * | 2007-03-30 | 2016-07-05 | Tokyo Electron Limited | Methods and heat treatment apparatus for uniformly heating a substrate during a bake process |
| US8464736B1 (en) | 2007-03-30 | 2013-06-18 | Lam Research Corporation | Reclaim chemistry |
| US20080241400A1 (en) * | 2007-03-31 | 2008-10-02 | Tokyo Electron Limited | Vacuum assist method and system for reducing intermixing of lithography layers |
| US8141566B2 (en) | 2007-06-19 | 2012-03-27 | Lam Research Corporation | System, method and apparatus for maintaining separation of liquids in a controlled meniscus |
| US8172989B2 (en) * | 2007-11-26 | 2012-05-08 | Sunpower Corporation | Prevention of substrate edge plating in a fountain plating process |
| CN102027568B (zh) | 2007-12-27 | 2014-09-03 | 朗姆研究公司 | 用于校准等离子体处理系统中的末端执行器对准的系统和方法 |
| US8954287B2 (en) | 2007-12-27 | 2015-02-10 | Lam Research Corporation | Systems and methods for calibrating end effector alignment using at least a light source |
| WO2009086109A2 (en) | 2007-12-27 | 2009-07-09 | Lam Research Corporation | Systems and methods for dynamic alignment beam calibration |
| WO2009086042A2 (en) | 2007-12-27 | 2009-07-09 | Lam Research Corporation | Arrangements and methods for determining positions and offsets |
| WO2009084610A1 (ja) * | 2007-12-27 | 2009-07-09 | Nec Corporation | 携帯電話端末 |
| US7901475B2 (en) * | 2008-01-18 | 2011-03-08 | Gm Global Technology Operations, Inc. | Diesel particulate filter with zoned resistive heater |
| CN101580945B (zh) * | 2008-05-12 | 2012-12-05 | 盛美半导体设备（上海）有限公司 | 电沉积系统 |
| JP5675617B2 (ja) * | 2008-09-04 | 2015-02-25 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 加工時における基板の分光モニタリングを使用した研磨速度の調整 |
| KR101689550B1 (ko) | 2009-01-11 | 2016-12-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판들을 운반하기 위한 정전기 엔드 이펙터 장치, 시스템들 및 방법들 |
| CN101851776B (zh) * | 2009-03-30 | 2011-10-05 | 昆山中辰矽晶有限公司 | 硅芯片边缘的处理方法 |
| CN102251268B (zh) * | 2010-05-19 | 2013-05-22 | 易生科技(北京)有限公司 | 电化学抛光中的支架抛光装置及抛光方法 |
| TWI410532B (zh) * | 2010-09-01 | 2013-10-01 | Grand Plastic Technology Co Ltd | 晶圓填孔垂直式電極電鍍設備 |
| CN102140669B (zh) * | 2011-03-17 | 2016-06-01 | 上海集成电路研发中心有限公司 | 硅片电镀铜后的清洗方法 |
| CN102427047B (zh) * | 2011-09-28 | 2014-03-12 | 上海华力微电子有限公司 | 晶圆背面清洁设备以及晶圆背面清洁方法 |
| SG194239A1 (en) | 2012-04-09 | 2013-11-29 | Semiconductor Tech & Instr Inc | End handler |
| CN102864486A (zh) * | 2012-10-24 | 2013-01-09 | 哈尔滨电机厂有限责任公司 | 电解抛光装置 |
| CN104838480B (zh) * | 2012-12-10 | 2018-03-02 | 盛美半导体设备（上海）有限公司 | 晶圆抛光方法 |
| JP6114060B2 (ja) * | 2013-02-27 | 2017-04-12 | 東京エレクトロン株式会社 | 基板搬送装置、基板受渡位置確認方法及び基板処理システム |
| CN103510149B (zh) * | 2013-10-14 | 2015-11-18 | 陈功 | 一种带电解抛光液的湿式自动抛光方法及其设备 |
| CN105316754B (zh) * | 2014-07-29 | 2019-08-16 | 盛美半导体设备（上海）有限公司 | 电化学加工工艺及电化学加工装置 |
| US9966290B2 (en) | 2015-07-30 | 2018-05-08 | Lam Research Corporation | System and method for wafer alignment and centering with CCD camera and robot |
| SG11201804654WA (en) * | 2015-12-04 | 2018-06-28 | Acm Res Shanghai Inc | Apparatus for holding substrate |
| CN105780101B (zh) * | 2016-01-27 | 2018-06-26 | 杨继芳 | 一种新型电解抛光设备 |
| FR3049940B1 (fr) * | 2016-04-06 | 2018-04-13 | Saint- Gobain Glass France | Dispositif de support pour feuille de verre notamment dans une installation de lavage |
| US10460960B2 (en) * | 2016-05-09 | 2019-10-29 | Applied Materials, Inc. | Gas panel apparatus and method for reducing exhaust requirements |
| JP6756540B2 (ja) | 2016-08-08 | 2020-09-16 | 株式会社荏原製作所 | めっき装置、めっき装置の制御方法、及び、めっき装置の制御方法をコンピュータに実行させるためのプログラムを格納した記憶媒体 |
| CN106191983B (zh) * | 2016-08-12 | 2018-06-29 | 厦门大学 | 一种用于电化学刻蚀加工的微流控装置及其应用方法 |
| CN106737805A (zh) * | 2016-12-13 | 2017-05-31 | 天津彼洋机器人系统工程有限公司 | 一种多功能机器人夹爪 |
| GB201701166D0 (en) * | 2017-01-24 | 2017-03-08 | Picofluidics Ltd | An apparatus for electrochemically processing semiconductor substrates |
| WO2019041154A1 (en) * | 2017-08-30 | 2019-03-07 | Acm Research (Shanghai) Inc. | METALLIZATION APPARATUS |
| US11469134B2 (en) * | 2017-09-07 | 2022-10-11 | Acm Research (Shanghai) Inc. | Plating chuck |
| CN109560029B (zh) * | 2017-09-26 | 2024-02-09 | Tcl环鑫半导体(天津)有限公司 | 一种自动圆形硅片倒片机构 |
| CN108406568B (zh) * | 2018-05-21 | 2023-08-22 | 浙江工业大学 | 一种使用液态金属抛光液对叶片边缘抛光的装置及方法 |
| CN108453651B (zh) * | 2018-05-24 | 2024-05-07 | 明峰医疗系统股份有限公司 | 一种pet探测器轴定位工装 |
| CN109652850B (zh) * | 2018-11-23 | 2021-01-26 | 铜陵蓝盾丰山微电子有限公司 | 多通道片式电镀装置 |
| CN109609996B (zh) * | 2018-12-12 | 2020-12-18 | 东华大学 | 经编机槽针批量镀硬铬用组合挂具 |
| CN109712923B (zh) * | 2018-12-26 | 2020-12-11 | 上海福赛特机器人有限公司 | 一种晶圆周转装置及晶圆周转方法 |
| CN109676274B (zh) * | 2018-12-27 | 2021-01-15 | 深圳市大族数控科技有限公司 | 一种释压机构及具有该释压机构的真空吸附和吸尘装置 |
| CN109759957A (zh) * | 2019-02-21 | 2019-05-17 | 中国工程物理研究院激光聚变研究中心 | 环抛中抛光液的循环供液装置及供液方法 |
| CN112017932B (zh) * | 2019-05-31 | 2022-11-29 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置中气体输送系统的耐腐蚀结构 |
| US11890718B2 (en) * | 2020-01-17 | 2024-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Removable tray assembly for CMP systems |
| EP3851916A1 (en) * | 2020-01-17 | 2021-07-21 | ASML Netherlands B.V. | Suction clamp, object handler, stage apparatus and lithographic apparatus |
| JP7422586B2 (ja) * | 2020-03-30 | 2024-01-26 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| CN111693852B (zh) * | 2020-06-23 | 2023-12-22 | 宏茂微电子(上海)有限公司 | 一种塑封装元器件开封方法及开封装置 |
| CN113881986A (zh) * | 2021-10-28 | 2022-01-04 | 惠州市本正智能设备有限公司 | 节能喷咀及电镀装置 |
| CN114473818B (zh) * | 2022-02-28 | 2023-05-02 | 南京尚吉增材制造研究院有限公司 | 用于义齿的组合式调节型抛光夹具 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3517958A (en) * | 1968-06-17 | 1970-06-30 | Ibm | Vacuum pick-up with air shield |
| US4304641A (en) * | 1980-11-24 | 1981-12-08 | International Business Machines Corporation | Rotary electroplating cell with controlled current distribution |
| US4430178A (en) * | 1982-05-24 | 1984-02-07 | Cominco Ltd. | Method and apparatus for effecting current reversal in electro-deposition of metals |
| US4600229A (en) * | 1984-08-03 | 1986-07-15 | Oten Peter D | Vacuum cup |
| EP0456426B1 (en) * | 1990-05-07 | 2004-09-15 | Canon Kabushiki Kaisha | Vacuum type wafer holder |
| JPH07136885A (ja) * | 1993-06-30 | 1995-05-30 | Toshiba Corp | 真空チャック |
| US5584746A (en) * | 1993-10-18 | 1996-12-17 | Shin-Etsu Handotai Co., Ltd. | Method of polishing semiconductor wafers and apparatus therefor |
| US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
| US6752584B2 (en) * | 1996-07-15 | 2004-06-22 | Semitool, Inc. | Transfer devices for handling microelectronic workpieces within an environment of a processing machine and methods of manufacturing and using such devices in the processing of microelectronic workpieces |
| US5937993A (en) * | 1997-01-14 | 1999-08-17 | Tamarac Scientific Co., Inc. | Apparatus and method for automatically handling and holding panels near and at the exact plane of exposure |
| US6439824B1 (en) * | 2000-07-07 | 2002-08-27 | Semitool, Inc. | Automated semiconductor immersion processing system |
| TW405158B (en) * | 1997-09-17 | 2000-09-11 | Ebara Corp | Plating apparatus for semiconductor wafer processing |
| US6183611B1 (en) * | 1998-07-17 | 2001-02-06 | Cutek Research, Inc. | Method and apparatus for the disposal of processing fluid used to deposit and/or remove material on a substrate |
| US6187152B1 (en) * | 1998-07-17 | 2001-02-13 | Cutek Research, Inc. | Multiple station processing chamber and method for depositing and/or removing material on a substrate |
| EP1133786A2 (en) * | 1998-11-28 | 2001-09-19 | ACM Research, Inc. | Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces |
| US6610150B1 (en) * | 1999-04-02 | 2003-08-26 | Asml Us, Inc. | Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
| US6279976B1 (en) * | 1999-05-13 | 2001-08-28 | Micron Technology, Inc. | Wafer handling device having conforming perimeter seal |
| CN1319130C (zh) * | 1999-12-24 | 2007-05-30 | 株式会社荏原制作所 | 半导体基片处理装置及处理方法 |
-
2003
- 2003-04-07 TW TW092107906A patent/TWI274393B/zh not_active IP Right Cessation
- 2003-04-08 WO PCT/US2003/010725 patent/WO2003087436A1/en active Application Filing
- 2003-04-08 CN CNB038102064A patent/CN100430526C/zh not_active Expired - Fee Related
- 2003-04-08 SG SG200606992-6A patent/SG159384A1/en unknown
- 2003-04-08 CA CA002479794A patent/CA2479794A1/en not_active Abandoned
- 2003-04-08 EP EP03746651A patent/EP1492907A4/en not_active Withdrawn
- 2003-04-08 KR KR10-2004-7015977A patent/KR20040099407A/ko not_active Application Discontinuation
- 2003-04-08 CN CN2008102128377A patent/CN101353810B/zh not_active Expired - Fee Related
- 2003-04-08 JP JP2003584368A patent/JP2005522585A/ja active Pending
- 2003-04-08 US US10/510,522 patent/US20050218003A1/en not_active Abandoned
- 2003-04-08 AU AU2003226319A patent/AU2003226319A1/en not_active Abandoned
-
2006
- 2006-06-08 JP JP2006159680A patent/JP2006319348A/ja active Pending
- 2006-07-10 JP JP2006189857A patent/JP2006328543A/ja active Pending
- 2006-08-24 JP JP2006227700A patent/JP2007077501A/ja active Pending
- 2006-10-17 JP JP2006282453A patent/JP2007051377A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114990549A (zh) * | 2022-05-30 | 2022-09-02 | 高红霞 | 一种汽车冲压模具铸件表面拉毛装置及方法 |
| CN114990549B (zh) * | 2022-05-30 | 2024-01-12 | 东莞海雅特汽车科技有限公司 | 一种汽车冲压模具铸件表面拉毛处理装置及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040099407A (ko) | 2004-11-26 |
| EP1492907A4 (en) | 2008-01-09 |
| CN101353810A (zh) | 2009-01-28 |
| EP1492907A1 (en) | 2005-01-05 |
| TW200402821A (en) | 2004-02-16 |
| CN1653211A (zh) | 2005-08-10 |
| AU2003226319A1 (en) | 2003-10-27 |
| WO2003087436A1 (en) | 2003-10-23 |
| US20050218003A1 (en) | 2005-10-06 |
| CN101353810B (zh) | 2012-02-15 |
| JP2007051377A (ja) | 2007-03-01 |
| TWI274393B (en) | 2007-02-21 |
| JP2005522585A (ja) | 2005-07-28 |
| JP2006319348A (ja) | 2006-11-24 |
| JP2007077501A (ja) | 2007-03-29 |
| JP2006328543A (ja) | 2006-12-07 |
| SG159384A1 (en) | 2010-03-30 |
| CN100430526C (zh) | 2008-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20050218003A1 (en) | Electropolishing and/or electroplating apparatus and methods | |
| JP4067307B2 (ja) | 回転保持装置 | |
| JP4108941B2 (ja) | 基板の把持装置、処理装置、及び把持方法 | |
| US7223323B2 (en) | Multi-chemistry plating system | |
| US20040238481A1 (en) | Electropolishing assembly and methods for electropolishing conductive layers | |
| US20060081478A1 (en) | Plating apparatus and plating method | |
| US20110073469A1 (en) | Electrochemical deposition system | |
| US6899111B2 (en) | Configurable single substrate wet-dry integrated cluster cleaner | |
| WO2006076088A2 (en) | Multi-zone showerhead for drying single semiconductor substrate | |
| KR20110042245A (ko) | 도금방법 | |
| IL176467A (en) | Edge wheel dry manifold | |
| US6893505B2 (en) | Apparatus and method for regulating fluid flows, such as flows of electrochemical processing fluids | |
| JP2008013851A (ja) | 回転保持装置及び半導体基板処理装置 | |
| US7967960B2 (en) | Fluid-confining apparatus | |
| US9640384B2 (en) | Substrate cleaning apparatus and substrate cleaning method | |
| EP1694885A2 (en) | Multi-chemistry plating system | |
| US20030209523A1 (en) | Planarization by chemical polishing for ULSI applications | |
| JP2021136418A (ja) | 基板処理装置および基板処理方法 | |
| CN114959843B (zh) | 后电填充模块及用于后电填充模块的校准方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |