KR20040014352A - 유기 전계발광 소자 - Google Patents
유기 전계발광 소자 Download PDFInfo
- Publication number
- KR20040014352A KR20040014352A KR1020030054924A KR20030054924A KR20040014352A KR 20040014352 A KR20040014352 A KR 20040014352A KR 1020030054924 A KR1020030054924 A KR 1020030054924A KR 20030054924 A KR20030054924 A KR 20030054924A KR 20040014352 A KR20040014352 A KR 20040014352A
- Authority
- KR
- South Korea
- Prior art keywords
- organic
- layer
- electrode
- fine particles
- electroluminescent device
- Prior art date
Links
- 239000010419 fine particle Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 42
- 150000002894 organic compounds Chemical class 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 1
- 239000005083 Zinc sulfide Substances 0.000 claims 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 claims 1
- VIDTVPHHDGRGAF-UHFFFAOYSA-N selenium sulfide Chemical compound [Se]=S VIDTVPHHDGRGAF-UHFFFAOYSA-N 0.000 claims 1
- 229960005265 selenium sulfide Drugs 0.000 claims 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 127
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 15
- 239000011368 organic material Substances 0.000 description 14
- 238000001894 space-charge-limited current method Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- -1 alkane thiols Chemical class 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 230000005281 excited state Effects 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical group C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000011859 microparticle Substances 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 150000004696 coordination complex Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 2
- MUNFOTHAFHGRIM-UHFFFAOYSA-N 2,5-dinaphthalen-1-yl-1,3,4-oxadiazole Chemical compound C1=CC=C2C(C3=NN=C(O3)C=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 MUNFOTHAFHGRIM-UHFFFAOYSA-N 0.000 description 2
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 2
- 229910000733 Li alloy Inorganic materials 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000001989 lithium alloy Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 1
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 1
- NSMJMUQZRGZMQC-UHFFFAOYSA-N 2-naphthalen-1-yl-1H-imidazo[4,5-f][1,10]phenanthroline Chemical compound C12=CC=CN=C2C2=NC=CC=C2C2=C1NC(C=1C3=CC=CC=C3C=CC=1)=N2 NSMJMUQZRGZMQC-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical group CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- 125000004860 4-ethylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920003026 Acene Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- GOZPTOHMTKTIQP-UHFFFAOYSA-N OC1=CC=CC2=CC=C3C=CC(=NC3=C21)C(=O)O Chemical compound OC1=CC=CC2=CC=C3C=CC(=NC3=C21)C(=O)O GOZPTOHMTKTIQP-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical group C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000012050 conventional carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005442 molecular electronic Methods 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical group C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 150000003613 toluenes Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/841—Applying alternating current [AC] during manufacturing or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Composite Materials (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (14)
- 제 1 전극과, 제 2 전극, 및 상기 제 1 전극과 상기 제 2 전극 사이에 배치되고 전압 인가에 의해 발광하는 유기 화합물을 함유하는 전계 발광층을 포함하는 유기 전계발광 소자에 있어서,상기 전계 발광층 중에 도전성 미립자들이 분산되어 있는 유기 전계발광 소자.
- 제 1 항에 있어서, 상기 제 1 전극과 상기 전계 발광층 사이에 설치되어 상기 제 1 전극으로부터 상기 전계 발광층으로 캐리어가 주입되는 것을 방지하는 절연층과,상기 제 2 전극과 상기 전계 발광층 사이에 설치되어 상기 제 2 전극으로부터 상기 전계 발광층으로 캐리어가 주입되는 것을 방지하는 절연층을 부가로 포함하는 유기 전계발광 소자.
- 제 1 항에 있어서, 상기 제 1 전극과 상기 전계 발광층 사이에 설치되는 절연층, 및상기 제 2 전극과 상기 전계 발광층 사이에 설치되는 절연층을 포함하고,교류 바이어스에 의해 동작하는 유기 전계발광 소자.
- 제 1 항에 있어서, 상기 전계 발광층은 바이폴라성을 갖는 유기 전계발광 소자.
- 제 1 항에 있어서, 상기 전계 발광층은 전자 수송성의 유기 화합물과 홀 수송성의 유기 화합물이 혼합된 바이폴라성 혼합층을 포함하는 유기 전계발광 소자.
- 제 1 항에 있어서, 상기 전계 발광층은, π공역계 및 δ공역계중 적어도 하나의 공역계를 갖고 바이폴라성인 고분자 화합물을 포함하는 유기 전계발광 소자.
- 제 1 항에 있어서, 상기 도전성 미립자들은 도전율이 10-10S/m 이상인 재료를 포함하는 유기 전계발광 소자.
- 제 1 항에 있어서, 상기 도전성 미립자들은 평균 직경이 2 내지 50 nm 인 금속 미립자들인 유기 전계발광 소자.
- 제 8 항에 있어서, 상기 금속 미립자들은 금, 은 및 백금으로 구성되는 그룹에서 선택된 적어도 하나를 포함하는 유기 전계발광 소자.
- 제 8 항에 있어서, 상기 금속 미립자들은 유기 화합물로 피복되는 유기 전계발광 소자.
- 제 1 항에 있어서, 상기 도전성 미립자들은 평균 직경이 2 내지 50 nm 인 무기 반도체 미립자를 포함하는 유기 전계발광 소자.
- 제 11 항에 있어서, 상기 무기 반도체 미립자들은 황화 카드뮴, 황화 셀렌, 산화 아연, 황화 아연, 요오드화 구리, 및 인듐주석 산화물로 구성되는 그룹에서 선택되는 적어도 하나를 포함하는 유기 전계발광 소자.
- 제 11 항에 있어서, 상기 무기 반도체 미립자들은 유기 화합물로 피복되는 유기 전계발광 소자.
- 제 1 항에 있어서, 상기 도전성 미립자들은 카본 미립자, 계면 활성제로 표면 처리된 카본 미립자, 카본 나노튜브, 및 풀러렌(fullerenes)으로 구성되는 그룹에서 선택되는 적어도 하나인 유기 전계발광 소자.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002233558 | 2002-08-09 | ||
JPJP-P-2002-00233558 | 2002-08-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080057657A Division KR100975798B1 (ko) | 2002-08-09 | 2008-06-19 | 전계발광 소자 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040014352A true KR20040014352A (ko) | 2004-02-14 |
KR100975779B1 KR100975779B1 (ko) | 2010-08-17 |
Family
ID=30437802
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030054924A KR100975779B1 (ko) | 2002-08-09 | 2003-08-08 | 유기 전계발광 소자 |
KR1020080057657A KR100975798B1 (ko) | 2002-08-09 | 2008-06-19 | 전계발광 소자 제조 방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080057657A KR100975798B1 (ko) | 2002-08-09 | 2008-06-19 | 전계발광 소자 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7239081B2 (ko) |
EP (1) | EP1388903B1 (ko) |
KR (2) | KR100975779B1 (ko) |
CN (1) | CN100454567C (ko) |
TW (2) | TWI305475B (ko) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100624422B1 (ko) * | 2004-06-05 | 2006-09-19 | 삼성전자주식회사 | 나노크기의 침을 이용한 발광소자 |
KR100792823B1 (ko) * | 2006-10-17 | 2008-01-14 | 한양대학교 산학협력단 | 발광 소자 및 그 제조 방법 |
KR100820375B1 (ko) * | 2007-05-14 | 2008-04-08 | 한양대학교 산학협력단 | 전계 발광 소자와 그 제조 방법 및 그 구동 방법 |
KR100906782B1 (ko) * | 2008-04-11 | 2009-07-09 | 재단법인서울대학교산학협력재단 | 유기 발광 소자 |
KR101078125B1 (ko) * | 2005-02-07 | 2011-10-28 | 삼성전자주식회사 | 다공성 물질을 이용한 비휘발성 나노 채널 메모리 소자 |
KR101100893B1 (ko) * | 2004-04-29 | 2012-01-02 | 삼성전자주식회사 | 유기전계 발광소자 및 그 형성방법 |
KR101223718B1 (ko) * | 2005-06-18 | 2013-01-18 | 삼성디스플레이 주식회사 | 나노 도전성 막의 패터닝 방법 |
KR101318745B1 (ko) * | 2006-11-09 | 2013-10-16 | 엘지디스플레이 주식회사 | 유기 전계발광표시소자 및 그 제조방법 |
KR20160078718A (ko) * | 2014-12-24 | 2016-07-05 | 주식회사 나래나노텍 | 개선된 유기 발광다이오드 및 그 제조 방법 |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG142163A1 (en) | 2001-12-05 | 2008-05-28 | Semiconductor Energy Lab | Organic semiconductor element |
JP2003303683A (ja) * | 2002-04-09 | 2003-10-24 | Semiconductor Energy Lab Co Ltd | 発光装置 |
EP1367659B1 (en) | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
US7045955B2 (en) * | 2002-08-09 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescence element and a light emitting device using the same |
TWI272874B (en) * | 2002-08-09 | 2007-02-01 | Semiconductor Energy Lab | Organic electroluminescent device |
KR101156971B1 (ko) | 2003-01-29 | 2012-06-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 |
US7333072B2 (en) * | 2003-03-24 | 2008-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit device |
US7504049B2 (en) | 2003-08-25 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device |
US7511421B2 (en) * | 2003-08-25 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Mixed metal and organic electrode for organic device |
CN100551187C (zh) | 2003-12-26 | 2009-10-14 | 株式会社半导体能源研究所 | 发光元件 |
JP4224639B2 (ja) * | 2004-01-23 | 2009-02-18 | 下山 勲 | 高密度集積発光デバイスの作製方法及び高密度集積発光デバイス並びに高密度集積発光デバイスの作製装置 |
WO2005115062A1 (en) | 2004-05-20 | 2005-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
KR101215860B1 (ko) | 2004-05-21 | 2012-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자 및 그 소자를 사용하는 발광 장치 |
US7598670B2 (en) | 2004-05-21 | 2009-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
JP4731840B2 (ja) * | 2004-06-14 | 2011-07-27 | キヤノン株式会社 | 電界効果型トランジスタおよびその製造方法 |
US7358291B2 (en) | 2004-06-24 | 2008-04-15 | Arrowhead Center, Inc. | Nanocomposite for enhanced rectification |
US7365486B2 (en) * | 2004-07-09 | 2008-04-29 | Au Optronics Corporation | High contrast organic light emitting device with electron transport layer including fullerenes |
US7564052B2 (en) | 2004-11-05 | 2009-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and light emitting device using the same |
JP5062952B2 (ja) | 2004-12-06 | 2012-10-31 | 株式会社半導体エネルギー研究所 | レーザ発振器 |
US20170272694A1 (en) * | 2004-12-13 | 2017-09-21 | Zeppelin, Inc. | Mobile Phone with Status Memory |
KR100913903B1 (ko) | 2004-12-24 | 2009-08-26 | 삼성전자주식회사 | 양자점을 이용하는 메모리 소자 |
JP4450207B2 (ja) * | 2005-01-14 | 2010-04-14 | セイコーエプソン株式会社 | 発光素子の製造方法 |
US8026531B2 (en) | 2005-03-22 | 2011-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
CN100431195C (zh) * | 2005-04-22 | 2008-11-05 | 友达光电股份有限公司 | 有机发光元件 |
US20060244373A1 (en) * | 2005-04-28 | 2006-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing thereof |
US7645497B2 (en) * | 2005-06-02 | 2010-01-12 | Eastman Kodak Company | Multi-layer conductor with carbon nanotubes |
WO2007004729A1 (en) | 2005-07-06 | 2007-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
EP1784055A3 (en) * | 2005-10-17 | 2009-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Lighting system |
KR20080095244A (ko) * | 2006-02-07 | 2008-10-28 | 스미또모 가가꾸 가부시키가이샤 | 유기 전계 발광 소자 |
US7528418B2 (en) * | 2006-02-24 | 2009-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP4865411B2 (ja) * | 2006-06-15 | 2012-02-01 | キヤノン株式会社 | 有機発光素子、ディスプレイ装置および表示装置 |
US20080007157A1 (en) * | 2006-07-10 | 2008-01-10 | Yazaki Corporation | Compound of nanostructures and polymer for use in electroluminescent device |
CN101165937A (zh) | 2006-10-18 | 2008-04-23 | 清华大学 | 有机复合物p-n结及其制备方法以及应用该p-n结的有机复合物二极管 |
CN102214805B (zh) * | 2007-02-21 | 2015-05-20 | 株式会社半导体能源研究所 | 发光元件,发光器件,电子器件和喹喔啉衍生物 |
EP1973386B8 (en) * | 2007-03-23 | 2016-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device |
EP2068380B1 (de) * | 2007-10-15 | 2011-08-17 | Novaled AG | Organisches elektrolumineszentes Bauelement |
US8456005B2 (en) * | 2007-10-26 | 2013-06-04 | Konica Minolta Holdings, Inc. | Transparent conductive film and method for producing the same |
WO2009057317A1 (ja) * | 2007-11-01 | 2009-05-07 | Panasonic Corporation | 発光素子、及び、表示装置 |
EP2075860A3 (en) * | 2007-12-28 | 2013-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device and electronic device |
US8053661B2 (en) | 2008-01-25 | 2011-11-08 | Fujifilm Corporation | Photoelectric conversion element and imaging device |
JP4445556B2 (ja) | 2008-02-18 | 2010-04-07 | 国立大学法人広島大学 | 発光素子およびその製造方法 |
JP5108806B2 (ja) * | 2008-03-07 | 2012-12-26 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
JP4392045B2 (ja) * | 2008-03-19 | 2009-12-24 | 国立大学法人広島大学 | 発光素子およびその製造方法 |
WO2009118784A1 (ja) | 2008-03-26 | 2009-10-01 | 国立大学法人広島大学 | 発光素子およびその製造方法 |
JP5324287B2 (ja) * | 2009-03-30 | 2013-10-23 | ユー・ディー・シー アイルランド リミテッド | 発光素子 |
US8525407B2 (en) * | 2009-06-24 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Light source and device having the same |
US8169137B2 (en) * | 2009-07-14 | 2012-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light source and device using electroluminescence element |
JP5270642B2 (ja) * | 2010-03-24 | 2013-08-21 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
EP2503616A1 (en) * | 2011-03-21 | 2012-09-26 | Polyphotonix Limited | Emissive element for light emitting device, light emitting device and method for manufacturing such element and device |
JP6108664B2 (ja) * | 2011-04-04 | 2017-04-05 | ローム株式会社 | 有機el装置 |
KR101299337B1 (ko) * | 2011-07-25 | 2013-08-26 | 연세대학교 산학협력단 | Swnt를 포함하는 고분자 발광 소자 및 그 제조방법 |
TWI459086B (zh) * | 2011-12-22 | 2014-11-01 | Innolux Corp | 調節膜層結構及其製造方法與應用之顯示裝置 |
CN109370309A (zh) * | 2017-09-22 | 2019-02-22 | 苏州星烁纳米科技有限公司 | 墨水组合物及电致发光器件 |
KR20210077690A (ko) | 2018-10-16 | 2021-06-25 | 이데미쓰 고산 가부시키가이샤 | 유기 일렉트로루미네센스 소자 및 전자 기기 |
US11856877B2 (en) | 2019-12-23 | 2023-12-26 | The University Of Canterbury | Electrical contacts for nanoparticle networks |
Family Cites Families (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6028278A (ja) | 1983-07-26 | 1985-02-13 | Mitsubishi Electric Corp | 光電変換素子 |
US4878097A (en) * | 1984-05-15 | 1989-10-31 | Eastman Kodak Company | Semiconductor photoelectric conversion device and method for making same |
US4950614A (en) * | 1984-05-15 | 1990-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a tandem type semiconductor photoelectric conversion device |
US4871236A (en) * | 1985-09-18 | 1989-10-03 | Kabushiki Kaisha Toshiba | Organic thin film display element |
DE68925634T2 (de) * | 1988-11-21 | 1996-08-22 | Mitsui Toatsu Chemicals | Lichtemittierendes Element |
US5085946A (en) * | 1989-01-13 | 1992-02-04 | Ricoh Company, Ltd. | Electroluminescence device |
JP2869446B2 (ja) * | 1989-01-13 | 1999-03-10 | 株式会社リコー | 電界発光素子 |
JPH04192376A (ja) | 1990-11-22 | 1992-07-10 | Sekisui Chem Co Ltd | タンデム型有機太陽電池 |
JP2984103B2 (ja) * | 1991-09-02 | 1999-11-29 | 勝美 吉野 | 有機発光素子 |
JPH06318725A (ja) | 1993-05-10 | 1994-11-15 | Ricoh Co Ltd | 光起電力素子およびその製造方法 |
KR950021817A (ko) * | 1993-12-15 | 1995-07-26 | 이헌조 | 다층 전계발광소자 |
US5682043A (en) * | 1994-06-28 | 1997-10-28 | Uniax Corporation | Electrochemical light-emitting devices |
JP3560651B2 (ja) | 1994-08-31 | 2004-09-02 | 住友金属鉱山株式会社 | 導電ペーストと透光性導電膜およびそれらを用いた分散型エレクトロルミネッセンス素子 |
US5858561A (en) * | 1995-03-02 | 1999-01-12 | The Ohio State University | Bipolar electroluminescent device |
JP3561549B2 (ja) * | 1995-04-07 | 2004-09-02 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子 |
US5677546A (en) * | 1995-05-19 | 1997-10-14 | Uniax Corporation | Polymer light-emitting electrochemical cells in surface cell configuration |
DE19518668A1 (de) | 1995-05-22 | 1996-11-28 | Bosch Gmbh Robert | Elektrolumineszierendes Schichtsystem |
JP3808534B2 (ja) * | 1996-02-09 | 2006-08-16 | Tdk株式会社 | 画像表示装置 |
JP3631845B2 (ja) | 1996-06-11 | 2005-03-23 | セイコープレシジョン株式会社 | 有機el素子 |
EP0925709B1 (en) * | 1996-09-04 | 2003-08-13 | Cambridge Display Technology Limited | Organic light-emitting devices with improved cathode |
JP2760347B2 (ja) * | 1996-09-27 | 1998-05-28 | 日本電気株式会社 | 有機薄膜電界発光素子およびその製造方法 |
JPH10270171A (ja) * | 1997-01-27 | 1998-10-09 | Junji Kido | 有機エレクトロルミネッセント素子 |
EP0985007B2 (en) * | 1997-02-24 | 2010-11-03 | Cabot Corporation | Oxygen-containing phosphor powders, methods for making phosphor powders and devices incorporating same |
KR100248392B1 (ko) * | 1997-05-15 | 2000-09-01 | 정선종 | 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법 |
EP1027723B1 (en) * | 1997-10-14 | 2009-06-17 | Patterning Technologies Limited | Method of forming an electric capacitor |
JPH11126685A (ja) | 1997-10-22 | 1999-05-11 | Nec Kansai Ltd | 電界発光灯 |
JPH11162646A (ja) * | 1997-11-26 | 1999-06-18 | Chisso Corp | 有機エレクトロルミネッセント素子 |
KR20010040506A (ko) * | 1998-02-02 | 2001-05-15 | 유니액스 코포레이션 | 유기 반도체로부터 제조한 영상 센서 |
JPH11251067A (ja) * | 1998-03-02 | 1999-09-17 | Junji Kido | 有機エレクトロルミネッセント素子 |
CN100358970C (zh) * | 1998-04-09 | 2008-01-02 | 出光兴产株式会社 | 有机电致发光装置 |
JP3875401B2 (ja) | 1998-05-12 | 2007-01-31 | Tdk株式会社 | 有機el表示装置及び有機el素子 |
JP3884564B2 (ja) | 1998-05-20 | 2007-02-21 | 出光興産株式会社 | 有機el発光素子およびそれを用いた発光装置 |
GB9815271D0 (en) * | 1998-07-14 | 1998-09-09 | Cambridge Display Tech Ltd | Particles and devices comprising particles |
US6297495B1 (en) * | 1998-08-19 | 2001-10-02 | The Trustees Of Princeton University | Organic photosensitive optoelectronic devices with a top transparent electrode |
US6198091B1 (en) * | 1998-08-19 | 2001-03-06 | The Trustees Of Princeton University | Stacked organic photosensitive optoelectronic devices with a mixed electrical configuration |
US6451415B1 (en) | 1998-08-19 | 2002-09-17 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device with an exciton blocking layer |
US6278055B1 (en) * | 1998-08-19 | 2001-08-21 | The Trustees Of Princeton University | Stacked organic photosensitive optoelectronic devices with an electrically series configuration |
US6198092B1 (en) * | 1998-08-19 | 2001-03-06 | The Trustees Of Princeton University | Stacked organic photosensitive optoelectronic devices with an electrically parallel configuration |
US6352777B1 (en) * | 1998-08-19 | 2002-03-05 | The Trustees Of Princeton University | Organic photosensitive optoelectronic devices with transparent electrodes |
EP1144197B1 (en) * | 1999-01-15 | 2003-06-11 | 3M Innovative Properties Company | Thermal Transfer Method. |
EP1024394A1 (en) | 1999-01-26 | 2000-08-02 | Bayer Aktiengesellschaft | Photochromic and electrochromic device, solutions for uses therein and use thereof |
EP1432051B1 (en) | 1999-04-06 | 2008-10-08 | Cambridge Display Technology Limited | Method for doping a polymer |
KR100683050B1 (ko) * | 1999-06-28 | 2007-02-15 | 모토로라 인코포레이티드 | 유기 전계발광 장치 |
US6489044B1 (en) * | 1999-09-01 | 2002-12-03 | Lucent Technologies Inc. | Process for fabricating polarized organic photonics devices, and resultant articles |
US6255744B1 (en) | 1999-09-15 | 2001-07-03 | Delta Electronics, Inc. | Back-up power device and applications thereof |
EP1136469B1 (en) * | 1999-09-30 | 2009-04-15 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence element using an amine compound |
AT408157B (de) * | 1999-10-15 | 2001-09-25 | Electrovac | Verfahren zur herstellung eines feldemissions-displays |
TW476073B (en) * | 1999-12-09 | 2002-02-11 | Ebara Corp | Solution containing metal component, method of and apparatus for forming thin metal film |
US6372154B1 (en) * | 1999-12-30 | 2002-04-16 | Canon Kabushiki Kaisha | Luminescent ink for printing of organic luminescent devices |
JP4477729B2 (ja) * | 2000-01-19 | 2010-06-09 | シャープ株式会社 | 光電変換素子及びそれを用いた太陽電池 |
JP4592967B2 (ja) | 2000-01-31 | 2010-12-08 | 株式会社半導体エネルギー研究所 | 発光装置及び電気器具 |
US6580213B2 (en) * | 2000-01-31 | 2003-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of manufacturing the same |
TW495809B (en) | 2000-02-28 | 2002-07-21 | Semiconductor Energy Lab | Thin film forming device, thin film forming method, and self-light emitting device |
JP2001244074A (ja) * | 2000-02-28 | 2001-09-07 | Technology Licensing Organization Inc | 発光素子及びその製造方法 |
TW518768B (en) * | 2000-05-22 | 2003-01-21 | Showa Denko Kk | Organic electroluminescent device and light-emitting material |
ATE374795T1 (de) * | 2000-06-12 | 2007-10-15 | Sumation Co Ltd | Elektrolumineszierende materialien und gegenstände aus einer polymermatrix |
JP2001357975A (ja) | 2000-06-16 | 2001-12-26 | Rohm Co Ltd | 有機el素子 |
JP2002033193A (ja) * | 2000-07-13 | 2002-01-31 | Hitachi Ltd | 有機発光素子 |
US20020022151A1 (en) * | 2000-07-25 | 2002-02-21 | Hitoshi Ishikawa | Organic electroluminescent device |
JP4491942B2 (ja) * | 2000-09-19 | 2010-06-30 | 凸版印刷株式会社 | エレクトロルミネッセンス素子およびその製造方法 |
JP2002111085A (ja) * | 2000-10-03 | 2002-04-12 | Komatsu Ltd | 熱電材料の製造方法及びそれに用いる製造装置 |
US7252883B2 (en) * | 2000-10-23 | 2007-08-07 | Sekisui Chemical Co., Ltd. | Coated particles |
US6515314B1 (en) * | 2000-11-16 | 2003-02-04 | General Electric Company | Light-emitting device with organic layer doped with photoluminescent material |
JP2002164170A (ja) | 2000-11-27 | 2002-06-07 | Matsushita Electric Works Ltd | 白色有機エレクトロルミネッセンスパネル |
US6965124B2 (en) * | 2000-12-12 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of fabricating the same |
US6558575B2 (en) * | 2001-02-07 | 2003-05-06 | Agfa-Gevaert | Perparation of improved ZnS:Mn phosphors |
US6737293B2 (en) * | 2001-02-07 | 2004-05-18 | Agfa-Gevaert | Manufacturing of a thin film inorganic light emitting diode |
US20020140338A1 (en) * | 2001-03-27 | 2002-10-03 | Esther Sluzky | Luminous low excitation voltage phosphor display structure deposition |
US6740938B2 (en) * | 2001-04-16 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Transistor provided with first and second gate electrodes with channel region therebetween |
EP1396033A4 (en) | 2001-06-11 | 2011-05-18 | Univ Princeton | ORGANIC PHOTOVOLTAIC COMPONENTS |
US6657378B2 (en) * | 2001-09-06 | 2003-12-02 | The Trustees Of Princeton University | Organic photovoltaic devices |
US6580027B2 (en) * | 2001-06-11 | 2003-06-17 | Trustees Of Princeton University | Solar cells using fullerenes |
US6952023B2 (en) * | 2001-07-17 | 2005-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP4611578B2 (ja) | 2001-07-26 | 2011-01-12 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US6524884B1 (en) * | 2001-08-22 | 2003-02-25 | Korea Electronics And Telecommunications Research Institute | Method for fabricating an organic electroluminescene device having organic field effect transistor and organic eloectroluminescence diode |
KR20030017748A (ko) * | 2001-08-22 | 2003-03-04 | 한국전자통신연구원 | 유기물 전계 효과 트랜지스터와 유기물 발광 다이오드가일체화된 유기물 전기 발광 소자 및 그 제조 방법 |
AU2002323168A1 (en) * | 2001-09-05 | 2003-03-18 | Rensselaer Polytechnic Institute | Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles |
GB0126757D0 (en) * | 2001-11-07 | 2002-01-02 | Univ Cambridge Tech | Organic field effect transistors |
SG142163A1 (en) | 2001-12-05 | 2008-05-28 | Semiconductor Energy Lab | Organic semiconductor element |
JP3933591B2 (ja) * | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP3989761B2 (ja) * | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
US7028898B2 (en) * | 2002-04-12 | 2006-04-18 | Wintek Corporation | Layout structure of electrode lead wires for organic led display |
EP1367659B1 (en) * | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
TWI272874B (en) * | 2002-08-09 | 2007-02-01 | Semiconductor Energy Lab | Organic electroluminescent device |
US7045955B2 (en) | 2002-08-09 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescence element and a light emitting device using the same |
JP2004111085A (ja) * | 2002-09-13 | 2004-04-08 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセント素子 |
JP4598673B2 (ja) * | 2003-06-13 | 2010-12-15 | パナソニック株式会社 | 発光素子及び表示装置 |
US7224118B2 (en) * | 2003-06-17 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus having a wiring connected to a counter electrode via an opening portion in an insulating layer that surrounds a pixel electrode |
-
2003
- 2003-07-23 EP EP03016827.2A patent/EP1388903B1/en not_active Expired - Fee Related
- 2003-07-24 US US10/626,024 patent/US7239081B2/en not_active Expired - Fee Related
- 2003-07-25 TW TW092120423A patent/TWI305475B/zh not_active IP Right Cessation
- 2003-07-25 TW TW096145172A patent/TWI309537B/zh not_active IP Right Cessation
- 2003-08-08 KR KR1020030054924A patent/KR100975779B1/ko active IP Right Grant
- 2003-08-11 CN CNB03127837XA patent/CN100454567C/zh not_active Expired - Fee Related
-
2007
- 2007-06-08 US US11/811,437 patent/US9650245B2/en active Active
-
2008
- 2008-06-19 KR KR1020080057657A patent/KR100975798B1/ko active IP Right Grant
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101100893B1 (ko) * | 2004-04-29 | 2012-01-02 | 삼성전자주식회사 | 유기전계 발광소자 및 그 형성방법 |
KR100624422B1 (ko) * | 2004-06-05 | 2006-09-19 | 삼성전자주식회사 | 나노크기의 침을 이용한 발광소자 |
US8217401B2 (en) | 2004-06-05 | 2012-07-10 | Samsung Electronics Co., Ltd. | Light emitting device using nano size needle |
KR101078125B1 (ko) * | 2005-02-07 | 2011-10-28 | 삼성전자주식회사 | 다공성 물질을 이용한 비휘발성 나노 채널 메모리 소자 |
KR101223718B1 (ko) * | 2005-06-18 | 2013-01-18 | 삼성디스플레이 주식회사 | 나노 도전성 막의 패터닝 방법 |
KR100792823B1 (ko) * | 2006-10-17 | 2008-01-14 | 한양대학교 산학협력단 | 발광 소자 및 그 제조 방법 |
KR101318745B1 (ko) * | 2006-11-09 | 2013-10-16 | 엘지디스플레이 주식회사 | 유기 전계발광표시소자 및 그 제조방법 |
KR100820375B1 (ko) * | 2007-05-14 | 2008-04-08 | 한양대학교 산학협력단 | 전계 발광 소자와 그 제조 방법 및 그 구동 방법 |
KR100906782B1 (ko) * | 2008-04-11 | 2009-07-09 | 재단법인서울대학교산학협력재단 | 유기 발광 소자 |
KR20160078718A (ko) * | 2014-12-24 | 2016-07-05 | 주식회사 나래나노텍 | 개선된 유기 발광다이오드 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN100454567C (zh) | 2009-01-21 |
KR20080059542A (ko) | 2008-06-30 |
TW200814841A (en) | 2008-03-16 |
CN1474636A (zh) | 2004-02-11 |
US20040150333A1 (en) | 2004-08-05 |
KR100975798B1 (ko) | 2010-08-16 |
US20070243786A1 (en) | 2007-10-18 |
EP1388903A3 (en) | 2009-08-19 |
TWI305475B (en) | 2009-01-11 |
US9650245B2 (en) | 2017-05-16 |
KR100975779B1 (ko) | 2010-08-17 |
TW200412182A (en) | 2004-07-01 |
TWI309537B (en) | 2009-05-01 |
EP1388903A2 (en) | 2004-02-11 |
US7239081B2 (en) | 2007-07-03 |
EP1388903B1 (en) | 2016-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100975798B1 (ko) | 전계발광 소자 제조 방법 | |
KR101215280B1 (ko) | 조명 장치 | |
JP4368638B2 (ja) | 有機エレクトロルミネッセント素子 | |
TWI300627B (en) | Organic semiconductor element | |
JP4493951B2 (ja) | 有機エレクトロルミネッセント素子 | |
US20030197465A1 (en) | Organic light-emitting devices | |
JP2003528971A (ja) | 有機発光物質/ナノ粘土複合素材で製造された電気発光(el)素子 | |
JPH11283750A (ja) | 有機エレクトロルミネッセンス素子 | |
CN100397678C (zh) | 包含具有p-型半导体特性的有机化合物的电子器件 | |
KR100484496B1 (ko) | 유기염이 도핑된 전하 주입층을 이용하는 유기/고분자전기발광소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130722 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20140722 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20150630 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160707 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170719 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180718 Year of fee payment: 9 |