KR100975779B1 - 유기 전계발광 소자 - Google Patents
유기 전계발광 소자 Download PDFInfo
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- KR100975779B1 KR100975779B1 KR1020030054924A KR20030054924A KR100975779B1 KR 100975779 B1 KR100975779 B1 KR 100975779B1 KR 1020030054924 A KR1020030054924 A KR 1020030054924A KR 20030054924 A KR20030054924 A KR 20030054924A KR 100975779 B1 KR100975779 B1 KR 100975779B1
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- South Korea
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- fine particles
- electroluminescent
- electrode
- layer
- electroluminescent device
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/841—Applying alternating current [AC] during manufacturing or treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Composite Materials (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (33)
- 제 1 전극;제 2 전극;전압의 인가에 의해 발광하는 전계 발광층;상기 제 1 전극과 상기 전계 발광층 사이의 제 1 절연층; 및상기 제 2 전극과 상기 전계 발광층 사이의 제 2 절연층을 포함하고;상기 전계 발광층 중에 도전성 미립자들이 분산되어 있고,상기 도전성 미립자들은 유기 화합물로 피복되는, 전계발광 소자.
- 제 1 항에 있어서, 상기 전계 발광층은 바이폴라(bipolar) 특성들을 포함하는, 전계발광 소자.
- 제 1 항에 있어서, 상기 전계 발광층은 전자 수송 특성들을 가지는 유기 막과 정공 수송 특성들을 가지는 유기 막이 혼합되는 바이폴라 혼합층을 포함하는, 전계발광 소자.
- 제 1 항에 있어서, 상기 전계 발광층은 π공역계와 σ공역계 중 적어도 하나의 공역계와 바이폴라 특성들을 가지는 고분자 화합물을 포함하는, 전계발광 소자.
- 제 1 항에 있어서, 상기 도전성 미립자들은 도전율이 10-10 S/m 이상인 재료를 포함하는, 전계발광 소자.
- 제 1 항에 있어서, 상기 도전성 미립자들은 평균 직경이 2 내지 50 nm인 금속 미립자들을 포함하는, 전계발광 소자.
- 제 6 항에 있어서, 상기 금속 미립자들은 금, 은 및 백금으로 이루어진 그룹으로부터 선택된 하나 이상을 포함하는, 전계발광 소자.
- 제 1 항에 있어서, 상기 도전성 미립자들은 카본 미립자들, 계면 활성제로 표면 처리된 카본 미립자들, 카본 나노튜브들, 및 풀러린(fullerene)들로 이루어지는 그룹으로부터 선택되는 적어도 하나인, 전계발광 소자.
- 제 1 전극;제 2 전극;전압의 인가에 의해 발광하는 전계발광층;상기 제 1 전극과 상기 전계발광층 사이의 제 1 절연층; 및상기 제 2 전극과 상기 전계발광층 사이의 제 2 절연층을 포함하고;상기 전계발광층 중에 반도체 미립자들이 분산되어 있고,상기 반도체 미립자들은 유기 화합물로 피복되는, 전계발광 소자.
- 제 9 항에 있어서, 상기 전계 발광층은 바이폴라 특성들을 포함하는, 전계발광 소자.
- 제 9 항에 있어서, 상기 전계 발광층은 전자 수송 특성들을 가지는 유기 막과 정공 수송 특성들을 가지는 유기 막이 혼합되는 바이폴라 혼합층을 포함하는, 전계발광 소자.
- 제 9 항에 있어서, 상기 전계 발광층은 π공역계와 σ공역계 중 적어도 하나의 공역계와 바이폴라 특성들을 가지는 고분자 화합물을 포함하는, 전계발광 소자.
- 제 9 항에 있어서, 상기 반도체 미립자들은 평균 직경이 2 내지 50 nm인, 전계발광 소자.
- 제 9 항에 있어서, 상기 반도체 미립자들은 황화카드뮴, 황화셀레늄, 산화아연, 황화아연, 요오드화구리, 및 인듐 주석 산화물로 이루어진 그룹으로부터 선택된 적어도 하나를 포함하는, 전계발광 소자.
- 제 1 전극;제 2 전극; 및상기 제 1 전극과 상기 제 2 전극 사이에 있고, 전압 인가에 의해 발광하는 전계발광층을 포함하고;상기 전계발광층 중에 도전성 미립자들이 분산되어 있고,상기 도전성 미립자들은 유기 화합물로 피복되는, 전계발광 소자.
- 제 15 항에 있어서, 상기 전계 발광층은 바이폴라 특성들을 포함하는, 전계발광 소자.
- 제 15 항에 있어서, 상기 전계 발광층은 전자 수송 특성들을 가지는 유기 막과 정공 수송 특성들을 가지는 유기 막이 혼합되는 바이폴라 혼합층을 포함하는, 전계발광 소자.
- 제 15 항에 있어서, 상기 전계 발광층은 π공역계와 σ공역계 중 적어도 하나의 공역계와 바이폴라 특성들을 가지는 고분자 화합물을 포함하는, 전계발광 소자.
- 제 15 항에 있어서, 상기 도전성 미립자들은 도전율이 10-10 S/m 이상인 재료를 포함하는, 전계발광 소자.
- 제 15 항에 있어서, 상기 도전성 미립자들은 평균 직경이 2 내지 50 nm인 금속 미립자들을 포함하는, 전계발광 소자.
- 제 20 항에 있어서, 상기 금속 미립자들은 금, 은 및 백금으로 이루어진 그룹으로부터 선택된 하나 이상을 포함하는, 전계발광 소자.
- 제 15 항에 있어서, 상기 도전성 미립자들은 카본 미립자들, 계면 활성제로 표면 처리된 카본 미립자들, 카본 나노튜브들, 및 풀러린들로 이루어지는 그룹으로부터 선택되는 적어도 하나인, 전계발광 소자.
- 제 1 전극;제 2 전극; 및상기 제 1 전극과 상기 제 2 전극 사이에 있고, 전압 인가에 의해 발광하는 전계발광층을 포함하고;상기 전계발광층 중에 반도체 미립자들이 분산되어 있고,상기 반도체 미립자들은 유기 화합물로 피복되는, 전계발광 소자.
- 제 23 항에 있어서, 상기 전계 발광층은 바이폴라 특성들을 포함하는, 전계발광 소자.
- 제 23 항에 있어서, 상기 전계 발광층은 전자 수송 특성들을 가지는 유기 막과 정공 수송 특성들을 가지는 유기 막이 혼합되는 바이폴라 혼합층을 포함하는, 전계발광 소자.
- 제 23 항에 있어서, 상기 전계 발광층은 π공역계와 σ공역계 중 적어도 하나의 공역계와 바이폴라 특성들을 가지는 고분자 화합물을 포함하는, 전계발광 소자.
- 제 23 항에 있어서, 상기 반도체 미립자들은 평균 직경이 2 내지 50 nm인, 전계발광 소자.
- 제 23 항에 있어서, 상기 반도체 미립자들은 황화카드뮴, 황화셀레늄, 산화아연, 황화아연, 요오드화구리, 및 인듐 주석 산화물로 이루어진 그룹으로부터 선택된 적어도 하나를 포함하는, 전계발광 소자.
- 제 1 전극;제 2 전극; 및상기 제 1 전극과 상기 제 2 전극 사이에 있고, 전압 인가에 의해 발광하는 전계발광층을 포함하고;상기 전계발광층 중에 ITO (인듐 주석 산화물) 미립자들이 분산되어 있는, 전계발광 소자.
- 제 29 항에 있어서, 상기 전계 발광층은 바이폴라 특성들을 포함하는, 전계발광 소자.
- 제 29 항에 있어서, 상기 전계 발광층은 전자 수송 특성들을 가지는 유기 막과 정공 수송 특성들을 가지는 유기 막이 혼합되는 바이폴라 혼합층을 포함하는, 전계발광 소자.
- 제 29 항에 있어서, 상기 전계 발광층은 π공역계와 σ공역계 중 적어도 하나의 공역계와 바이폴라 특성들을 가지는 고분자 화합물을 포함하는, 전계발광 소자.
- 제 29 항에 있어서, 상기 ITO (인듐 주석 산화물) 미립자들은 실란 커플링제로 피복되는, 전계발광 소자.
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Publication number | Publication date |
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KR100975798B1 (ko) | 2010-08-16 |
CN100454567C (zh) | 2009-01-21 |
EP1388903A3 (en) | 2009-08-19 |
TWI305475B (en) | 2009-01-11 |
TW200412182A (en) | 2004-07-01 |
US7239081B2 (en) | 2007-07-03 |
US20040150333A1 (en) | 2004-08-05 |
CN1474636A (zh) | 2004-02-11 |
TWI309537B (en) | 2009-05-01 |
US9650245B2 (en) | 2017-05-16 |
EP1388903A2 (en) | 2004-02-11 |
KR20040014352A (ko) | 2004-02-14 |
EP1388903B1 (en) | 2016-03-16 |
KR20080059542A (ko) | 2008-06-30 |
TW200814841A (en) | 2008-03-16 |
US20070243786A1 (en) | 2007-10-18 |
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