KR20020061510A - TFT용 Si층의 금속 유도 자기-정합 결정화 - Google Patents
TFT용 Si층의 금속 유도 자기-정합 결정화 Download PDFInfo
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- 238000002425 crystallisation Methods 0.000 title claims abstract description 30
- 230000008025 crystallization Effects 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 21
- 239000002184 metal Substances 0.000 title claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 71
- 239000002019 doping agent Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 54
- 150000001875 compounds Chemical class 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 229920005591 polysilicon Polymers 0.000 claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 42
- 238000000151 deposition Methods 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000011159 matrix material Substances 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 12
- 239000004973 liquid crystal related substance Substances 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 238000003672 processing method Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000011282 treatment Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 241001239379 Calophysus macropterus Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910015202 MoCr Inorganic materials 0.000 description 1
- 229910016024 MoTa Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 208000037998 chronic venous disease Diseases 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011419 induction treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 150000002822 niobium compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- KOUDKOMXLMXFKX-UHFFFAOYSA-N sodium oxido(oxo)phosphanium hydrate Chemical compound O.[Na+].[O-][PH+]=O KOUDKOMXLMXFKX-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L27/1259—Multistep manufacturing methods
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Abstract
Description
Claims (20)
- 기판상에 형성되는 상단-게이트형 박막 트랜지스터(TFT)를 포함하는 반도체 디바이스에 있어서,상기 상단 게이트형 TFT는,상기 기판상에 피착된 절연층;상기 절연층상에 피착되는 금속-도펀트 화합물로부터 형성된 소스 전극 및 드레인 전극;상기 절연층과 상기 소스 전극 및 상기 드레인 전극상에 피착된 폴리 실리콘 (이하, 'poly-Si'이라 함)층;상기 금속-도펀트 화합물로부터의 상기 도펀트의 이동을 통해 상기 금속-도펀트 화합물과 상기 poly-Si층 사이에 형성된 저항성 접촉층;상기 poly-Si층상에 피착된 게이트 절연층; 및상기 게이트 절연층상에 형성된 게이트 전극을 포함하고, 상기 poly-Si층은 금속 유도 측면방향 결정화에 의해 결정화되는 것을 특징으로 하는 반도체 디바이스.
- 제1항에 있어서,상기 금속-도펀트 화합물은 Ni, Fe, Co, Pt, Mo, Ti, B, 및 P로 구성된 그룹으로부터 선택된 원소를 포함하는 것을 특징으로 하는 반도체 디바이스.
- 제1항에 있어서,상기 금속-도펀트 화합물은 NiP 또는 NiB인 것을 특징으로 하는 반도체 디바이스.
- 제1항에 있어서,상기 금속-도펀트 화합물은 NiP이고, P의 농도는 0.5 at% 내지 10 at%의 범위에 있는 것을 특징으로 하는 반도체 디바이스.
- 제1항에 있어서,상기 금속-도펀트 화합물은 NiB이고, B의 농도는 0.25 at% 내지 2.0 at%의 범위에 있는 것을 특징으로 하는 반도체 디바이스.
- 제1항에 있어서,상기 기판상에 광차폐층이 형성되고, 복수의 상기 TFT가 상기 반도체 디바이스에서 액티브 매트릭스를 형성하도록 배열되어, 상기 반도체 디바이스가 액티브 매트릭스 액정 디스플레이로 사용되는 것을 특징으로 하는 반도체 디바이스.
- 제1항에 있어서,복수의 상기 TFT가 상기 반도체 디바이스에서 액티브 매트릭스를 형성하도록배열되어, 상기 반도체 디바이스가 액티브 매트릭스 전계-발광 디스플레이 또는 영상 센서로 사용되는 것을 특징으로 하는 반도체 디바이스.
- 기판상에 형성되는 상단-게이트형 박막 트랜지스터(TFT)에 있어서,상기 기판상에 피착된 절연층;상기 절연층상에 피착되는 금속-도펀트 화합물로부터 형성된 소스 전극 및 드레인 전극;상기 절연층과 상기 소스 전극 및 상기 드레인 전극상에 피착된 폴리 실리콘 (이하, 'poly-Si'이라 함)층;상기 금속-도펀트 화합물로부터의 상기 도펀트의 이동을 통해 상기 금속-도펀트 화합물과 상기 poly-Si층 사이에 형성된 저항성 접촉층;상기 poly-Si층상에 피착된 게이트 절연층; 및상기 게이트 절연층상에 형성된 게이트 전극을 포함하고, 상기 poly-Si층은 금속 유도 측면방향 결정화에 의해 결정화되는 것을 특징으로 하는 상단-게이트형 TFT.
- 제8항에 있어서,상기 금속-도펀트는 Ni, Fe, Co, Pt, Mo, Ti, B, 및 P로 구성된 그룹으로부터 선택된 원소를 포함하는 것을 특징으로 하는 상단-게이트형 TFT.
- 제8항에 있어서,상기 금속-도펀트 화합물은 NiP 또는 NiB인 것을 특징으로 하는 상단-게이트형 TFT.
- 제8항에 있어서,상기 금속-도펀트 화합물은 NiP이고, P의 농도는 0.5 at% 내지 10 at%의 범위에 있는 것을 특징으로 하는 상단-게이트형 TFT.
- 제8항에 있어서,상기 금속-도펀트 화합물은 NiB이고, B의 농도는 0.25 at% 내지 2.0 at%의 범위에 있는 것을 특징으로 하는 상단-게이트형 TFT.
- 제8항에 있어서,상기 기판상에 광차폐층이 형성되고, 복수의 상기 TFT가 액티브 매트릭스를 형성하도록 배열되어, 상기 상단-게이트형 TFT가 액티브 매트릭스 액정 디스플레이에 포함되는 것을 특징으로 하는 상단-게이트형 TFT.
- 제8항에 있어서,복수의 상기 TFT가 액티브 매트릭스를 형성하도록 배열되어, 상기 상단-게이트형 TFT가 액티브 매트릭스 전계-발광 디스플레이 또는 영상 센서에 포함되는 것을 특징으로 하는 상단-게이트형 TFT.
- 상단-게이트형 TFT를 형성하는 처리 방법에 있어서:TFT 구조를 지지하기 위한 기판을 제공하는 단계;상기 기판상에 절연층을 피착하는 단계;상기 절연층상에 금속-도펀트 화합물을 피착하는 단계;상기 금속-도펀트 화합물을 패터닝하여 소스 전극 및 드레인 전극을 형성하는 단계;상기 절연층 및 상기 금속-도펀트 화합물상에 비정질 실리콘(이하, 'a-Si'라 함)층을 피착하는 단계;상기 a-Si층상에 게이트 절연층을 피착하는 단계;상기 게이트 절연층상에 게이트 재료를 피착하는 단계;상기 층들을 패터닝하여 상기 기판상에 상단-게이트형 TFT 구조를 형성하는 단계; 및상기 a-Si층을 어닐링 처리하여 자기-정합된 결정질 경계를 갖는 폴리 실리콘 (poly-Si)층을 얻고 상기 금속-도펀트 화합물과 상기 poly-Si층 사이에 저항성 접촉층을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제15항에 있어서,상기 a-Si층의 결정화는 상기 a-Si층의 외부 측면방향 위치로부터 시작하여 상기 a-Si층의 내부로 진행되어 결정질 경계가 상기 poly-Si층의 대략 중간 부분에 자기-정합된 방식으로 형성되는 것을 특징으로 하는 방법.
- 제15항에 있어서,상기 금속-도펀트 화합물은 Ni, Fe, Co, Pt, Mo, Ti, B, 및 P로 구성된 그룹으로부터 선택된 원소를 포함하는 것을 특징으로 하는 방법.
- 제15항에 있어서,상기 금속-도펀트 화합물은 NiP 또는 NiB인 것을 특징으로 하는 방법.
- 제15항에 있어서,상기 기판상에 광차폐층을 피착하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 상단-게이트형 TFT를 형성하는 처리 방법에 있어서:TFT 구조를 지지하기 위한 기판을 제공하는 단계;상기 기판상에 절연층을 피착하는 단계;상기 절연층상에 금속-도펀트 화합물을 피착하는 단계;상기 금속-도펀트 화합물을 패터닝하여 소스 전극 및 드레인 전극을 형성하는 단계;상기 절연층 및 상기 금속-도펀트 화합물상에 a-Si층을 피착하는 단계;상기 a-Si층을 어닐링 처리하여 자기-정합된 결정질 경계를 갖는 폴리 실리콘(이하, 'poly-Si'이라 함)층을 얻고 상기 금속-도펀트 화합물과 상기 poly-Si층 사이에 저항성 접촉층을 형성하는 단계;상기 poly-Si층상에 게이트 절연층을 피착하는 단계;상기 게이트 절연층상에 게이트 재료를 피착하는 단계; 및상기 층들을 패터닝하여 상기 기판상에 상기 상단-게이트형 TFT 구조를 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
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US20020093017A1 (en) | 2002-07-18 |
JP4663202B2 (ja) | 2011-04-06 |
KR100462508B1 (ko) | 2004-12-17 |
US6566687B2 (en) | 2003-05-20 |
TW522572B (en) | 2003-03-01 |
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