KR20020012206A - 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법 - Google Patents
플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법 Download PDFInfo
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- KR20020012206A KR20020012206A KR1020017014066A KR20017014066A KR20020012206A KR 20020012206 A KR20020012206 A KR 20020012206A KR 1020017014066 A KR1020017014066 A KR 1020017014066A KR 20017014066 A KR20017014066 A KR 20017014066A KR 20020012206 A KR20020012206 A KR 20020012206A
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- ethylenically unsaturated
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- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-IGMARMGPSA-N Fluorine-19 Chemical compound [19F] YCKRFDGAMUMZLT-IGMARMGPSA-N 0.000 description 1
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229910019093 NaOCl Inorganic materials 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910018286 SbF 6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RHQDFWAXVIIEBN-UHFFFAOYSA-N Trifluoroethanol Chemical compound OCC(F)(F)F RHQDFWAXVIIEBN-UHFFFAOYSA-N 0.000 description 1
- VFQHLZMKZVVGFQ-UHFFFAOYSA-N [F].[Kr] Chemical compound [F].[Kr] VFQHLZMKZVVGFQ-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- PQLVXDKIJBQVDF-UHFFFAOYSA-N acetic acid;hydrate Chemical compound O.CC(O)=O PQLVXDKIJBQVDF-UHFFFAOYSA-N 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000012986 chain transfer agent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- NZNMSOFKMUBTKW-UHFFFAOYSA-M cyclohexanecarboxylate Chemical compound [O-]C(=O)C1CCCCC1 NZNMSOFKMUBTKW-UHFFFAOYSA-M 0.000 description 1
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012259 ether extract Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003818 flash chromatography Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001093 holography Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- JGTNAGYHADQMCM-UHFFFAOYSA-N perfluorobutanesulfonic acid Chemical class OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000003444 phase transfer catalyst Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000012258 stirred mixture Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- LXAWHMFHGHNIHC-UHFFFAOYSA-N sulfanyl trifluoromethanesulfonate Chemical compound FC(F)(F)S(=O)(=O)OS LXAWHMFHGHNIHC-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- KUVYIDWVLRLCGO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate 2,2,3,3,3-pentafluoropropyl 2-methylprop-2-enoate Chemical compound C(C(=C)C)(=O)OC(C)(C)C.C(C(=C)C)(=O)OCC(C(F)(F)F)(F)F KUVYIDWVLRLCGO-UHFFFAOYSA-N 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- WHRNULOCNSKMGB-UHFFFAOYSA-N tetrahydrofuran thf Chemical compound C1CCOC1.C1CCOC1 WHRNULOCNSKMGB-UHFFFAOYSA-N 0.000 description 1
- 125000002827 triflate group Chemical group FC(S(=O)(=O)O*)(F)F 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F214/18—Monomers containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F214/18—Monomers containing fluorine
- C08F214/186—Monomers containing fluorine with non-fluorinated comonomers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13237399P | 1999-05-04 | 1999-05-04 | |
| US60/132,373 | 1999-05-04 | ||
| PCT/US2000/011539 WO2000067072A1 (en) | 1999-05-04 | 2000-04-28 | Fluorinated polymers, photoresists and processes for microlithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020012206A true KR20020012206A (ko) | 2002-02-15 |
Family
ID=22453723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020017014066A Ceased KR20020012206A (ko) | 1999-05-04 | 2000-04-28 | 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법 |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP1183571B1 (enExample) |
| JP (1) | JP4402304B2 (enExample) |
| KR (1) | KR20020012206A (enExample) |
| CN (1) | CN1227569C (enExample) |
| AU (1) | AU4678100A (enExample) |
| DE (1) | DE60044493D1 (enExample) |
| HK (1) | HK1047797B (enExample) |
| IL (1) | IL145653A0 (enExample) |
| TW (1) | TWI227373B (enExample) |
| WO (1) | WO2000067072A1 (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100648123B1 (ko) * | 2003-09-10 | 2006-11-24 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 불소 함유 중합성 환상 올레핀 화합물 |
| KR100751737B1 (ko) * | 2003-03-28 | 2007-08-24 | 도오꾜오까고오교 가부시끼가이샤 | 액침 노광 프로세스용 레지스트 조성물 및 그 레지스트조성물을 사용한 레지스트 패턴 형성방법 |
| KR100804251B1 (ko) * | 2003-02-20 | 2008-02-18 | 프로메러스, 엘엘씨 | 포토레지스트 조성물용 용해속도 개질제 |
| KR100955454B1 (ko) * | 2002-05-31 | 2010-04-29 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
| KR101017801B1 (ko) * | 2002-10-03 | 2011-02-28 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 히드록실화된 광산-분해가능한 기를 갖는 포토레지스트 |
Families Citing this family (84)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| JP4327360B2 (ja) | 1998-09-23 | 2009-09-09 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ホトレジスト、ポリマーおよびマイクロリソグラフィの方法 |
| KR100634941B1 (ko) * | 1999-05-04 | 2006-10-17 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 플루오르화 에폭시드의 제조 방법 |
| US6468712B1 (en) | 2000-02-25 | 2002-10-22 | Massachusetts Institute Of Technology | Resist materials for 157-nm lithography |
| WO2001074916A1 (en) * | 2000-04-04 | 2001-10-11 | Daikin Industries, Ltd. | Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same |
| SG100729A1 (en) * | 2000-06-16 | 2003-12-26 | Jsr Corp | Radiation-sensitive resin composition |
| WO2001098834A1 (en) | 2000-06-21 | 2001-12-27 | Asahi Glass Company, Limited | Resist composition |
| JP4190167B2 (ja) | 2000-09-26 | 2008-12-03 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| AU2001296737A1 (en) | 2000-10-12 | 2002-04-22 | North Carolina State University | Co2-processes photoresists, polymers, and photoactive compounds for microlithography |
| CN1575438A (zh) * | 2000-11-09 | 2005-02-02 | 纳幕尔杜邦公司 | 微石印术用光刻胶组合物中的光酸产生剂 |
| JP2004534961A (ja) * | 2000-11-29 | 2004-11-18 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | フォトレジスト組成物を含有する多層エレメントおよびマイクロリソグラフィでのそれらの使用 |
| JP2004536327A (ja) | 2000-11-29 | 2004-12-02 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ポリマーブレンド及びマイクロリソグラフィ用フォトレジスト組成物中でのそれらの使用 |
| US6469220B2 (en) * | 2000-12-25 | 2002-10-22 | Shin-Etsu Chemical Co., Ltd. | Tertiary alcohol compounds having an alicyclic structure |
| KR100776551B1 (ko) | 2001-02-09 | 2007-11-16 | 아사히 가라스 가부시키가이샤 | 레지스트 조성물 |
| US6794109B2 (en) | 2001-02-23 | 2004-09-21 | Massachusetts Institute Of Technology | Low abosorbing resists for 157 nm lithography |
| JP4175112B2 (ja) | 2001-02-23 | 2008-11-05 | ダイキン工業株式会社 | ヒドロキシル基またはフルオロアルキルカルボニル基含有含フッ素エチレン性単量体およびそれらを重合して得られる含フッ素重合体 |
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| DE4207261C2 (de) * | 1992-03-07 | 2000-03-16 | Clariant Gmbh | Styrol-Monomere mit 2,2-Bis-trifluormethyl-oxaethano-Brückengliedern, Polymere und deren Verwendung |
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| JP3804138B2 (ja) * | 1996-02-09 | 2006-08-02 | Ｊｓｒ株式会社 | ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物 |
| JP4327360B2 (ja) * | 1998-09-23 | 2009-09-09 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ホトレジスト、ポリマーおよびマイクロリソグラフィの方法 |
-
2000
- 2000-04-28 AU AU46781/00A patent/AU4678100A/en not_active Abandoned
- 2000-04-28 DE DE60044493T patent/DE60044493D1/de not_active Expired - Lifetime
- 2000-04-28 WO PCT/US2000/011539 patent/WO2000067072A1/en not_active Ceased
- 2000-04-28 EP EP00928563A patent/EP1183571B1/en not_active Expired - Lifetime
- 2000-04-28 HK HK02109361.0A patent/HK1047797B/zh not_active IP Right Cessation
- 2000-04-28 CN CNB008071063A patent/CN1227569C/zh not_active Expired - Fee Related
- 2000-04-28 IL IL14565300A patent/IL145653A0/xx unknown
- 2000-04-28 KR KR1020017014066A patent/KR20020012206A/ko not_active Ceased
- 2000-04-28 JP JP2000615852A patent/JP4402304B2/ja not_active Expired - Fee Related
- 2000-05-03 TW TW089108395A patent/TWI227373B/zh not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100955454B1 (ko) * | 2002-05-31 | 2010-04-29 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
| KR101017801B1 (ko) * | 2002-10-03 | 2011-02-28 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 히드록실화된 광산-분해가능한 기를 갖는 포토레지스트 |
| KR100804251B1 (ko) * | 2003-02-20 | 2008-02-18 | 프로메러스, 엘엘씨 | 포토레지스트 조성물용 용해속도 개질제 |
| KR100751737B1 (ko) * | 2003-03-28 | 2007-08-24 | 도오꾜오까고오교 가부시끼가이샤 | 액침 노광 프로세스용 레지스트 조성물 및 그 레지스트조성물을 사용한 레지스트 패턴 형성방법 |
| KR100648123B1 (ko) * | 2003-09-10 | 2006-11-24 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 불소 함유 중합성 환상 올레핀 화합물 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1227569C (zh) | 2005-11-16 |
| JP4402304B2 (ja) | 2010-01-20 |
| JP2002543469A (ja) | 2002-12-17 |
| HK1047797B (zh) | 2006-07-28 |
| EP1183571B1 (en) | 2010-06-02 |
| EP1183571A1 (en) | 2002-03-06 |
| DE60044493D1 (de) | 2010-07-15 |
| AU4678100A (en) | 2000-11-17 |
| WO2000067072A1 (en) | 2000-11-09 |
| CN1357116A (zh) | 2002-07-03 |
| TWI227373B (en) | 2005-02-01 |
| IL145653A0 (en) | 2002-06-30 |
| HK1047797A1 (en) | 2003-03-07 |
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