TWI227373B - Fluorinated polymers, photoresists and processes for microlithography - Google Patents
Fluorinated polymers, photoresists and processes for microlithography Download PDFInfo
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- TWI227373B TWI227373B TW089108395A TW89108395A TWI227373B TW I227373 B TWI227373 B TW I227373B TW 089108395 A TW089108395 A TW 089108395A TW 89108395 A TW89108395 A TW 89108395A TW I227373 B TWI227373 B TW I227373B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 46
- 229920002313 fluoropolymer Polymers 0.000 title claims abstract description 41
- 238000001393 microlithography Methods 0.000 title abstract description 3
- 230000008569 process Effects 0.000 title abstract description 3
- 229920000642 polymer Polymers 0.000 claims abstract description 117
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical group FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 18
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- 125000004432 carbon atom Chemical group C* 0.000 claims description 52
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 48
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- 239000000758 substrate Substances 0.000 claims description 45
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- 238000010521 absorption reaction Methods 0.000 claims description 32
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- 239000001257 hydrogen Substances 0.000 claims description 26
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- 238000011161 development Methods 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 24
- 125000000524 functional group Chemical group 0.000 claims description 23
- 239000002585 base Substances 0.000 claims description 19
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- 239000011737 fluorine Substances 0.000 claims description 12
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- REPVLJRCJUVQFA-UHFFFAOYSA-N (-)-isopinocampheol Natural products C1C(O)C(C)C2C(C)(C)C1C2 REPVLJRCJUVQFA-UHFFFAOYSA-N 0.000 description 14
- 229940116229 borneol Drugs 0.000 description 14
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- DTGKSKDOIYIVQL-UHFFFAOYSA-N dl-isoborneol Natural products C1CC2(C)C(O)CC1C2(C)C DTGKSKDOIYIVQL-UHFFFAOYSA-N 0.000 description 14
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- WYURNTSHIVDZCO-SVYQBANQSA-N oxolane-d8 Chemical compound [2H]C1([2H])OC([2H])([2H])C([2H])([2H])C1([2H])[2H] WYURNTSHIVDZCO-SVYQBANQSA-N 0.000 description 14
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
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- NYZSKEULTVZUAW-UHFFFAOYSA-N 2,2-bis(trifluoromethyl)oxirane Chemical compound FC(F)(F)C1(C(F)(F)F)CO1 NYZSKEULTVZUAW-UHFFFAOYSA-N 0.000 description 7
- 101150041968 CDC13 gene Proteins 0.000 description 7
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F214/18—Monomers containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F214/18—Monomers containing fluorine
- C08F214/186—Monomers containing fluorine with non-fluorinated comonomers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13237399P | 1999-05-04 | 1999-05-04 |
Publications (1)
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|---|---|
| TWI227373B true TWI227373B (en) | 2005-02-01 |
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Family Applications (1)
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|---|---|---|---|
| TW089108395A TWI227373B (en) | 1999-05-04 | 2000-05-03 | Fluorinated polymers, photoresists and processes for microlithography |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP1183571B1 (enExample) |
| JP (1) | JP4402304B2 (enExample) |
| KR (1) | KR20020012206A (enExample) |
| CN (1) | CN1227569C (enExample) |
| AU (1) | AU4678100A (enExample) |
| DE (1) | DE60044493D1 (enExample) |
| HK (1) | HK1047797B (enExample) |
| IL (1) | IL145653A0 (enExample) |
| TW (1) | TWI227373B (enExample) |
| WO (1) | WO2000067072A1 (enExample) |
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| TW588220B (en) * | 2000-04-04 | 2004-05-21 | Daikin Ind Ltd | Novel fluorine-containing polymer having group reactive with acid and chemically amplifying type photo resist composition prepared by using same |
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| WO2002031596A1 (en) | 2000-10-12 | 2002-04-18 | University Of North Carolina At Chapel Hill | Co2-processes photoresists, polymers, and photoactive compounds for microlithography |
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| WO2003040827A1 (en) * | 2001-10-26 | 2003-05-15 | E. I. Du Pont De Nemours And Company | Fluorinated polymers having ester groups and photoresists for microlithography |
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| DE4207261C2 (de) * | 1992-03-07 | 2000-03-16 | Clariant Gmbh | Styrol-Monomere mit 2,2-Bis-trifluormethyl-oxaethano-Brückengliedern, Polymere und deren Verwendung |
| DE4207264B4 (de) * | 1992-03-07 | 2005-07-28 | Clariant Gmbh | Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial |
| JP3804138B2 (ja) * | 1996-02-09 | 2006-08-02 | Ｊｓｒ株式会社 | ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物 |
| IL141803A0 (en) * | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
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- 2000-04-28 IL IL14565300A patent/IL145653A0/xx unknown
- 2000-04-28 EP EP00928563A patent/EP1183571B1/en not_active Expired - Lifetime
- 2000-04-28 WO PCT/US2000/011539 patent/WO2000067072A1/en not_active Ceased
- 2000-04-28 DE DE60044493T patent/DE60044493D1/de not_active Expired - Lifetime
- 2000-04-28 AU AU46781/00A patent/AU4678100A/en not_active Abandoned
- 2000-04-28 JP JP2000615852A patent/JP4402304B2/ja not_active Expired - Fee Related
- 2000-05-03 TW TW089108395A patent/TWI227373B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IL145653A0 (en) | 2002-06-30 |
| AU4678100A (en) | 2000-11-17 |
| HK1047797B (zh) | 2006-07-28 |
| HK1047797A1 (en) | 2003-03-07 |
| JP2002543469A (ja) | 2002-12-17 |
| KR20020012206A (ko) | 2002-02-15 |
| DE60044493D1 (de) | 2010-07-15 |
| CN1227569C (zh) | 2005-11-16 |
| WO2000067072A1 (en) | 2000-11-09 |
| EP1183571B1 (en) | 2010-06-02 |
| EP1183571A1 (en) | 2002-03-06 |
| JP4402304B2 (ja) | 2010-01-20 |
| CN1357116A (zh) | 2002-07-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |