KR102565071B1 - 박형화 판상 부재의 제조 방법, 및 박형화 판상 부재의 제조 장치 - Google Patents

박형화 판상 부재의 제조 방법, 및 박형화 판상 부재의 제조 장치 Download PDF

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Publication number
KR102565071B1
KR102565071B1 KR1020207006175A KR20207006175A KR102565071B1 KR 102565071 B1 KR102565071 B1 KR 102565071B1 KR 1020207006175 A KR1020207006175 A KR 1020207006175A KR 20207006175 A KR20207006175 A KR 20207006175A KR 102565071 B1 KR102565071 B1 KR 102565071B1
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KR
South Korea
Prior art keywords
plate
laser
wafer
manufacturing
thinned
Prior art date
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KR1020207006175A
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English (en)
Korean (ko)
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KR20200047554A (ko
Inventor
나오후미 이즈미
시게유키 야마시타
Original Assignee
린텍 가부시키가이샤
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Application filed by 린텍 가부시키가이샤 filed Critical 린텍 가부시키가이샤
Publication of KR20200047554A publication Critical patent/KR20200047554A/ko
Application granted granted Critical
Publication of KR102565071B1 publication Critical patent/KR102565071B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Bending Of Plates, Rods, And Pipes (AREA)
  • Forging (AREA)
KR1020207006175A 2017-09-04 2018-08-21 박형화 판상 부재의 제조 방법, 및 박형화 판상 부재의 제조 장치 KR102565071B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017169775 2017-09-04
JPJP-P-2017-169775 2017-09-04
JPJP-P-2018-019650 2018-02-06
JP2018019650 2018-02-06
PCT/JP2018/030804 WO2019044588A1 (ja) 2017-09-04 2018-08-21 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置

Publications (2)

Publication Number Publication Date
KR20200047554A KR20200047554A (ko) 2020-05-07
KR102565071B1 true KR102565071B1 (ko) 2023-08-08

Family

ID=65527375

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207006175A KR102565071B1 (ko) 2017-09-04 2018-08-21 박형화 판상 부재의 제조 방법, 및 박형화 판상 부재의 제조 장치

Country Status (5)

Country Link
JP (1) JP7267923B2 (zh)
KR (1) KR102565071B1 (zh)
CN (1) CN111095493B (zh)
TW (1) TWI775931B (zh)
WO (1) WO2019044588A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7246919B2 (ja) * 2018-12-21 2023-03-28 浜松ホトニクス株式会社 レーザ加工方法、半導体部材製造方法及びレーザ加工装置
US20220168850A1 (en) * 2019-03-28 2022-06-02 Tokyo Electron Limited Processing apparatus and processing method
CN113710408B (zh) * 2019-04-19 2023-10-31 东京毅力科创株式会社 处理装置和处理方法
TW202116468A (zh) * 2019-07-18 2021-05-01 日商東京威力科創股份有限公司 處理裝置及處理方法
JP2021168347A (ja) * 2020-04-10 2021-10-21 株式会社ディスコ ウエーハの生成方法
WO2021220768A1 (ja) * 2020-04-30 2021-11-04 リンテック株式会社 シート剥離方法およびシート剥離装置、並びに、分割方法および分割装置

Citations (7)

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JP2008129596A (ja) * 2006-11-21 2008-06-05 Palo Alto Research Center Inc 走査経路及び合焦状態が安定な光走査機構並びにそれを用いたレーザアブレーション装置及び光起電デバイス製造システム
JP2010153590A (ja) * 2008-12-25 2010-07-08 Hamamatsu Photonics Kk 切断用加工方法
JP2016043401A (ja) * 2014-08-26 2016-04-04 信越ポリマー株式会社 基板加工方法及び基板
JP2016201575A (ja) * 2016-08-30 2016-12-01 国立大学法人埼玉大学 単結晶基板製造方法
JP2017022283A (ja) * 2015-07-13 2017-01-26 株式会社ディスコ 多結晶ＳｉＣウエーハの生成方法
JP2017024039A (ja) * 2015-07-21 2017-02-02 株式会社ディスコ ウエーハの薄化方法
JP2017092314A (ja) * 2015-11-12 2017-05-25 株式会社ディスコ ＳｉＣ基板の分離方法

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JPS60257983A (ja) * 1984-06-04 1985-12-19 Mitsubishi Electric Corp レ−ザビ−ム溶接装置
JPH10216981A (ja) * 1997-02-03 1998-08-18 Amada Co Ltd 光軸移動型レーザー加工装置
JP2004066376A (ja) 2002-08-05 2004-03-04 Nippei Toyama Corp 半導体ウエーハ研削盤のクーラント噴射装置およびその方法
JP2005109323A (ja) * 2003-10-01 2005-04-21 Tokyo Seimitsu Co Ltd レーザーダイシング装置
JP4861609B2 (ja) * 2004-05-28 2012-01-25 株式会社レナテック 有機物質の除去方法および除去装置
JP5899513B2 (ja) * 2012-01-12 2016-04-06 パナソニックＩｐマネジメント株式会社 基板製造方法、および改質層形成装置
JP6154121B2 (ja) * 2012-12-06 2017-06-28 リンテック株式会社 割断装置及び割断方法
JP2015230964A (ja) * 2014-06-05 2015-12-21 株式会社ディスコ ウエーハの加工方法
JP2016015447A (ja) * 2014-07-03 2016-01-28 パナソニックＩｐマネジメント株式会社 ウエハの製造方法および装置
KR20200006641A (ko) * 2014-11-27 2020-01-20 실텍트라 게엠베하 재료의 전환을 이용한 고체의 분할
JP6395634B2 (ja) * 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6482389B2 (ja) * 2015-06-02 2019-03-13 株式会社ディスコ ウエーハの生成方法
JP2017130638A (ja) * 2016-01-22 2017-07-27 リンテック株式会社 加工装置および加工方法
TW201727814A (zh) * 2016-01-25 2017-08-01 Lintec Corp 板狀構件之分割裝置及板狀構件之分割方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008129596A (ja) * 2006-11-21 2008-06-05 Palo Alto Research Center Inc 走査経路及び合焦状態が安定な光走査機構並びにそれを用いたレーザアブレーション装置及び光起電デバイス製造システム
JP2010153590A (ja) * 2008-12-25 2010-07-08 Hamamatsu Photonics Kk 切断用加工方法
JP2016043401A (ja) * 2014-08-26 2016-04-04 信越ポリマー株式会社 基板加工方法及び基板
JP2017022283A (ja) * 2015-07-13 2017-01-26 株式会社ディスコ 多結晶ＳｉＣウエーハの生成方法
JP2017024039A (ja) * 2015-07-21 2017-02-02 株式会社ディスコ ウエーハの薄化方法
JP2017092314A (ja) * 2015-11-12 2017-05-25 株式会社ディスコ ＳｉＣ基板の分離方法
JP2016201575A (ja) * 2016-08-30 2016-12-01 国立大学法人埼玉大学 単結晶基板製造方法

Also Published As

Publication number Publication date
CN111095493A (zh) 2020-05-01
JPWO2019044588A1 (ja) 2020-10-15
KR20200047554A (ko) 2020-05-07
JP7267923B2 (ja) 2023-05-02
TW201921474A (zh) 2019-06-01
WO2019044588A1 (ja) 2019-03-07
CN111095493B (zh) 2024-04-02
TWI775931B (zh) 2022-09-01

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