KR102538183B1 - 플라즈마 처리 장치 및 플라즈마 처리 장치의 탑재대 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 장치의 탑재대 Download PDF

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KR102538183B1
KR102538183B1 KR1020190178032A KR20190178032A KR102538183B1 KR 102538183 B1 KR102538183 B1 KR 102538183B1 KR 1020190178032 A KR1020190178032 A KR 1020190178032A KR 20190178032 A KR20190178032 A KR 20190178032A KR 102538183 B1 KR102538183 B1 KR 102538183B1
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ring
mounting surface
hole
holding portion
plasma processing
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KR20200086626A (ko
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요헤이 우치다
준 히로세
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도쿄엘렉트론가부시키가이샤
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    • H01L21/68785—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/67069—
    • H01L21/6831—
    • H01L21/68742—
    • H01L21/68757—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
KR1020190178032A 2019-01-09 2019-12-30 플라즈마 처리 장치 및 플라즈마 처리 장치의 탑재대 Active KR102538183B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020230065404A KR102874860B1 (ko) 2019-01-09 2023-05-22 플라즈마 처리 장치 및 플라즈마 처리 장치의 탑재대

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019001971A JP7134104B2 (ja) 2019-01-09 2019-01-09 プラズマ処理装置およびプラズマ処理装置の載置台
JPJP-P-2019-001971 2019-01-09

Related Child Applications (1)

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KR1020230065404A Division KR102874860B1 (ko) 2019-01-09 2023-05-22 플라즈마 처리 장치 및 플라즈마 처리 장치의 탑재대

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KR20200086626A KR20200086626A (ko) 2020-07-17
KR102538183B1 true KR102538183B1 (ko) 2023-05-30

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KR1020190178032A Active KR102538183B1 (ko) 2019-01-09 2019-12-30 플라즈마 처리 장치 및 플라즈마 처리 장치의 탑재대
KR1020230065404A Active KR102874860B1 (ko) 2019-01-09 2023-05-22 플라즈마 처리 장치 및 플라즈마 처리 장치의 탑재대

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US (3) US11501995B2 (https=)
JP (3) JP7134104B2 (https=)
KR (2) KR102538183B1 (https=)
CN (3) CN118073190A (https=)
TW (2) TWI795621B (https=)

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JP7134104B2 (ja) * 2019-01-09 2022-09-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
JP7204564B2 (ja) * 2019-03-29 2023-01-16 東京エレクトロン株式会社 プラズマ処理装置
TWM589358U (zh) * 2019-05-10 2020-01-11 美商蘭姆研究公司 半導體製程模組的頂環
TWI905899B (zh) * 2019-09-26 2025-11-21 日商東京威力科創股份有限公司 電漿處理裝置、基板支持器及環構造
KR102747645B1 (ko) * 2019-10-10 2024-12-27 삼성전자주식회사 정전 척 및 상기 정전 척을 포함하는 기판 처리 장치
JP7455012B2 (ja) * 2020-07-07 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
CN114530361B (zh) * 2020-11-23 2024-08-06 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置和更换聚焦环的方法
KR102869138B1 (ko) * 2020-12-30 2025-10-10 세메스 주식회사 기판 처리 장치 및 그 방법
JP7679136B2 (ja) 2021-02-01 2025-05-19 東京エレクトロン株式会社 収納容器、処理システム及びベースプレート
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CN116057676A (zh) 2021-02-09 2023-05-02 东京毅力科创株式会社 基片处理系统和输送方法
JP7492928B2 (ja) * 2021-02-10 2024-05-30 東京エレクトロン株式会社 基板支持器、プラズマ処理システム及びプラズマエッチング方法
JP7617816B2 (ja) * 2021-06-18 2025-01-20 東京エレクトロン株式会社 プラズマ処理装置
CN115679271B (zh) * 2021-07-22 2024-09-20 北京北方华创微电子装备有限公司 半导体工艺腔室
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KR102865276B1 (ko) * 2021-09-03 2025-09-29 세메스 주식회사 기판 지지 유닛과 이를 가지는 기판 처리 장치 및 링 반송 방법
CN117916863A (zh) * 2021-09-14 2024-04-19 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
KR102895921B1 (ko) * 2021-10-29 2025-12-04 세메스 주식회사 기판 지지 유닛과 이를 가지는 기판 처리 장치 및 링 반송 방법
KR102805826B1 (ko) * 2021-11-02 2025-05-14 세메스 주식회사 기판 지지 유닛과 이를 가지는 기판 처리 장치 및 링 반송 방법
JP7769538B2 (ja) 2021-12-07 2025-11-13 東京エレクトロン株式会社 基板支持台及びリングの交換方法
KR102914466B1 (ko) * 2021-12-08 2026-01-20 세메스 주식회사 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
WO2023127518A1 (ja) * 2021-12-27 2023-07-06 三井金属鉱業株式会社 シート固定装置、シート剥離装置及びシートの剥離方法
JP7825538B2 (ja) * 2021-12-28 2026-03-06 東京エレクトロン株式会社 プラズマ処理装置
TW202341228A (zh) * 2021-12-28 2023-10-16 日商東京威力科創股份有限公司 電漿處理裝置
JP7715467B2 (ja) 2022-05-26 2025-07-30 東京エレクトロン株式会社 基板処理装置及びリング部材の位置合わせ方法
KR102760147B1 (ko) * 2022-11-09 2025-02-03 세메스 주식회사 기판 지지 유닛과 이를 가지는 기판 처리 장치 및 링 반송 방법
CN120390977A (zh) 2022-12-27 2025-07-29 东京毅力科创株式会社 基片处理装置和基片处理系统
CN120981907A (zh) * 2023-04-24 2025-11-18 日本碍子株式会社 晶片载放台
JP7751079B2 (ja) * 2023-08-29 2025-10-07 日本碍子株式会社 半導体製造装置用部材
TWI885666B (zh) * 2023-12-27 2025-06-01 南韓商維人股份有限公司 淺蝕刻處理腔室
WO2025253723A1 (ja) * 2024-06-06 2025-12-11 東京エレクトロン株式会社 基板処理装置および搬送方法
WO2026034244A1 (ja) * 2024-08-06 2026-02-12 東京エレクトロン株式会社 プラズマ処理システム及び基板処理システム

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