CN110062954B - 用于腔室内加热器及晶片旋转机构的处理配件设计 - Google Patents
用于腔室内加热器及晶片旋转机构的处理配件设计 Download PDFInfo
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
本揭示案的实施方式关于用于与腔室内加热器及基板旋转机构一起使用的处理配件。在与本揭示案一致的一些实施方式中,用于与可旋转基板支撑件加热器台座一起使用以用于在处理腔室中支撑基板的处理配件可包含:上方边缘环,所述上方边缘环包含顶部突出部和从所述顶部突出部向下延伸的裙部;下方边缘环,所述下方边缘环至少部分支撑所述上方边缘环且使所述上方边缘环与所述基板支撑件加热器台座对准;底板,所述底板设置于所述处理腔室的底部上,所述底板在所述基板支撑件加热器台座处于降低的非处理位置时支撑所述上方边缘环;以及遮蔽环,所述遮蔽环在所述基板支撑件加热器台座处于升高的处理位置时与所述上方边缘环耦接。
Description
技术领域
本揭示案大体涉及用于改良沉积均匀性的设备及方法。特定而言,本揭示案的实施方式关于用于腔室内加热器及基板旋转机构的处理配件设计。
背景技术
在许多沉积腔室中(原子层沉积及化学气相沉积),旋转台座/加热器用于改良不均匀性。在多数情况下,不均匀性来自不均匀的化学输送、流动分布、腔室特征、及来自腔室主体及周围部件的温度不均匀性。使用旋转台座可分布这些变化的局部效应且改良不均匀性。
然而,在一些情况下,特别是在基板(晶片)安置于加热器上或接触加热器时,可通过台座或加热器本身造成不均匀性。局部不均匀的温度分布的影响可对沉积的均匀性具有显着影响。此不均匀的温度分布可来自加热器元件布局、局部特征(如升降销孔洞)、不均匀的辐射性热散失、不均匀的接触表面或间隙、或其他原因。
由此,在本领域中需要用于消除或减低由台座/加热器与基板接触导致的局部不均匀的温度分布的设备及方法。
发明内容
本揭示案的实施方式关于用于与腔室内加热器及基板旋转机构一起使用的处理配件。在与本揭示案一致的一些实施方式中,用于与可旋转基板支撑件加热器台座一起使用以用于在处理腔室中支撑基板的处理配件可包含:上方边缘环,所述上方边缘环包含顶部突出部及从所述顶部突出部向下延伸的裙部;下方边缘环,所述下方边缘环至少部分支撑所述上方边缘环且使所述上方边缘环与所述基板支撑件加热器台座对准;底板,所述底板设置于所述处理腔室的底部上,所述底板在所述基板支撑件加热器台座处于降低的非处理位置时支撑所述上方边缘环;以及遮蔽环,所述遮蔽环在所述基板支撑件加热器台座处于升高的处理位置时与所述上方边缘环耦接。
在一些实施方式中,一种处理配件包含:上方边缘环,所述上方边缘环包含顶部突出部及从所述顶部突出部向下延伸的裙部,其中所述上方边缘环的所述顶部突出部被配置成以与所述基板支撑件加热器台座的支撑表面成间隔开的关系来支撑基板,以便于相对于所述基板支撑件加热器台座的支撑表面来重新放置所述基板,且其中所述裙部覆盖所述基板支撑件加热器台座的外边缘,以防止热从所述基板支撑件加热器台座散失;以及下方边缘环,所述下方边缘环至少部分支撑所述上方边缘环且使所述上方边缘环与所述基板支撑件加热器台座对准。
在一些实施方式中,用于在处理腔室中支撑基板的可旋转基板支撑件加热器台座及处理配件包含:主要基板支撑件,所述主要基板支撑件具有支撑表面以在处理期间支撑所述基板,其中所述基板支撑件加热器台座包含连接至致动器的轴件以垂直地及绕所述轴件的轴旋转地移动所述基板支撑件加热器台座;以及处理配件,所述处理配件包括:上方边缘环,所述上方边缘环包含顶部突出部及从所述顶部突出部向下延伸的裙部,其中所述上方边缘环的所述顶部突出部被配置成以与所述基板支撑件加热器台座的支撑表面成间隔开的关系来支撑所述基板,以便于相对于所述基板支撑件加热器台座的所述支撑表面来重新放置所述基板;以及下方边缘环,所述下方边缘环至少部分支撑所述上方边缘环且使所述上方边缘环与所述基板支撑件加热器台座对准。
下文描述了本发明的其他及进一步实施方式。
附图说明
可以通过参考描绘于附图中的本发明的说明性实施方式来理解上文所简要概述且下文更详细论述的本发明的实施方式。然而,应注意到附图仅示出本发明的典型实施方式,并且由此不应被认为限制本发明的范围,因为本发明可允许其他等效的实施方式。
图1示出根据本揭示案的一个或多个实施方式的处理腔室的侧视截面视;
图2图示根据本揭示案的一个或多个实施方式的处理腔室的部分侧视截面图;
图3A描绘根据本揭示案的一个或多个实施方式的上方边缘环的仰视图;
图3B描绘根据本揭示案的一个或多个实施方式的上方边缘环的侧视截面图;
图4A描绘根据本揭示案的一个或多个实施方式的下方边缘环的俯视图;
图4B描绘根据本揭示案的一个或多个实施方式的对准锥形切口的侧视截面图;
图4C描绘根据本揭示案的一个或多个实施方式的下方边缘环的仰视图;
图5描绘根据本揭示案的一个或多个实施方式的底板环的俯视图;
图6A描绘根据本揭示案的一个或多个实施方式的遮蔽环的仰视图;以及
图6B描绘了遮蔽环的侧视截面图。
为了便于理解,尽可能使用相同标号来表示各图中共用的相同元件。附图并未依比例绘制且可为了清晰而简化。应预期一个实施方式的元件及特征可有利地并入其他实施方式而无须进一步详述。
具体实施方式
本揭示案的实施方式关于用于与腔室内加热器及基板旋转机构一起使用的处理配件。在与本揭示案一致的一些实施方式中,在降低加热器台座时将使用上方边缘环将基板从加热器台座基板支撑件解耦。在一些实施方式中,上方边缘环的裙部将保持于底板上,且基板将安置于上方边缘环的突出部上。在相对于基板旋转解耦的加热器台座之后,可将加热器台座升高至处理位置以再次吸附基板。处理配件还包含可在基板和加热器台座耦接阶段期间与上方边缘环对准的下方边缘环。处理配件可进一步包含底板,所述底板将用作针对上方边缘环的基底支撑件且确保与上方边缘环裙部最小接触。底板也将提供置中特征以使底板相对于腔室主体及泵送衬垫置中。处理配件可进一步包含遮蔽环,所述遮蔽环可在加热器台座处于处理位置时与上方边缘环耦接且与对准销对准。在一些实施方式中,遮蔽环还具有对准突部(tab)以使遮蔽环相对于泵送衬垫置中。本文所描述的与本揭示案一致的发明的处理配件有利地便于加热器台座相对于基板的解耦,以便于加热器台座相对于基板在腔室内旋转,进而消除或减低由台座/加热器与基板接触导致的局部不均匀的温度分布。
图1描绘根据本揭示案的一个或多个实施方式的处理腔室100的侧视截面图。处理腔室100包含腔室主体104,所述腔室主体104具有侧壁103、底部105及盖组件106以封闭处理容积108。基板支撑系统102至少部分设置于处理容积108中且可支撑经由端口112传送至处理容积108的基板110,所述端口112在腔室主体104中形成。处理配件包含于处理容积108中,所述处理配件包含上方边缘环116、下方边缘环180、底板169及/或遮蔽环182中的至少一者。
基板支撑系统102包含主要基板支撑件113,诸如台座114及热元件120。此外,处理配件的部分包括次级基板支撑件115,诸如上方边缘环116及下方边缘环180。次级基板支撑件115可用于间歇地支撑主要基板支撑件113上方的基板110。台座114包含支撑表面118,所述支撑表面118适于在处理期间接触(或接近)基板110的主表面。因此,台座114用作用于处理腔室100中的基板110的主要支撑结构。
台座114可包含热元件120以在处理期间控制基板110的温度。热元件120可例如是位于台座114的顶部上或台座内的加热器或冷却器。所述加热器或冷却器可以是耦接至台座114的顶部的分开部件,或可以是台座114的整体部分。在一些实施方式中,热元件120嵌入台座主体内(如图1及图2所示)。在一个或多个实施方式中,嵌入的热元件120可以是用于向台座114主体施加由基板110吸收的热能的加热或冷却元件或通道。其他元件(诸如一个或多个电极、传感器和/或真空口)可设置于台座114上或嵌入台座114内。基板110的温度可由一个或多个传感器(未图示)来监控。嵌入的热元件120可以是分区受控的,使得可独立地加热或冷却台座114主体的不同区域处的温度。然而,归因于减弱因素,诸如台座114中的缺陷及/或基板110中的不均匀性,嵌入的热元件120可能不能够跨整个支撑表面118和/或基板110均匀地施加热能。这些减弱因素可产生跨基板110的不均匀的温度分布,这可导致不均匀的基板处理。
台座114可经由轴件121耦接至致动器126,轴件121提供垂直运动(在z轴中)、旋转运动(绕着轴A)的一个或多个且也可提供角运动(相对于轴A)。可通过致动器126提供垂直运动以允许基板110在上方边缘环116与支撑表面118之间传送。轴件121经由开口127穿过处理腔室100的底部105。可通过环绕开口127且连接至轴件121的一部分的波纹管154来保持隔离的处理环境。
在处理位置中,如图1所示,上方边缘环116将接近台座114且可围绕(亦即环绕)台座114,使得基板110的下方表面由台座114来支撑。在处理位置中,上方边缘环116可与台座114和/或热元件120接触。在所图示的实施方式中,热元件120是单独部件,上方边缘环116被图示为由周边肩部122来支撑,周边肩部122绕着热元件120的圆周形成。本领域技术人员将理解,此仅为代表性的一个可能配置,且不应视为限制本揭示案的范围。在一些实施方式中,台座114具有嵌入其内的热元件120且上方边缘环116可支撑在绕着台座114的圆周形成的周边肩部122上。
上方边缘环116可在处理期间用作暂时的基板支撑件。上方边缘环116可用于视需要以与台座114的支撑表面118成间隔开的关系来支撑基板110(如图2所示),这可便于相对于台座114的支撑表面118来重新放置基板110。上方边缘环116可包含形成于其中的凹陷或狭槽,所述凹陷或狭槽经调整大小以允许机器人叶片109便于进行进出处理容积108的机器人基板传送。
下文关于图3A至图3B描述上方边缘环116的细节。特定地,图3A描绘上方边缘环116的仰视图,图3B描绘上方边缘环116的侧视截面图,且上方边缘环116包含具有中央开口314的环状主体322。上方边缘环116包含具有底部表面306和顶部表面312的顶部突出部305。上方边缘环116进一步包含悬在上方突出部下方且具有内表面310的下方裙部308。下方裙部308在边缘处覆盖加热器114/120以防止热从加热器散失。在一些实施方式中,下方裙部308的高度可以是约1英寸至约3英寸。在一些实施方式中,上方边缘环116具有约12英寸至约15英寸的内径316及约12.5英寸至约15.5英寸的外径318。在一些实施方式中,顶部突出部中央开口的内径320是约10.5英寸至约13.5英寸。
如图3A至图3B所示,上方边缘环116包含一个或多个特征。在一些实施方式中,上方边缘环116在顶部突出部的内径320处包含一个或多个顶部特征324。在一些实施方式中,顶部特征324可以是环状斜角边缘,以便在基板与上方边缘环116之间维持约15密耳(mil)至约25密耳(例如,20密耳的间隙±5密耳)的间隙,以便于加热器边缘气体净化并防止于侧面处的化学沉积。
在一些实施方式中,上方边缘环116包含一个或多个对准孔洞302。对准孔洞302便于在腔室内加热器旋转期间使上方边缘环116与下方边缘环180对准。在一些实施方式中,可有三个等距间隔(例如,120度)开的对准孔洞302。在一些实施方式中,对准孔洞302的形状可以是椭圆形。在一些实施方式中,对准孔洞302可具有倒角开口。在一些实施方式中,对准孔洞302可具有约0.1英寸至约0.5英寸之间的开口。
在一些实施方式中,上方边缘环116包含从顶部突出部305的下方表面306向下延伸的一个或多个对准突部304。对准突部304便于在加热器移动至处理位置时使上方边缘环116与遮蔽环182对准。在一些实施方式中,可有三个等距间隔(例如,120度)开的对准突部304。在一些实施方式中,对准突部304可从顶部突出部305的下方表面306向下延伸约0.1英寸至约0.2英寸。
下方边缘环180被设置于上方边缘环116下方且便于对准并支撑上方边缘环116等。下文关于图4A至图4C描述下方边缘环180的细节。特定地,图4A描绘下方边缘环180的俯视图,图4B描绘对准锥形切口404的侧视截面图,且图4C描绘下方边缘环180的仰视图。下方边缘环180包含具有中央开口414和内表面410的环状主体402。在一些实施方式中,下方边缘环180具有约11英寸至约14英寸的内径422及约12英寸至约15英寸的外径420。
如图4A至图4C所示,下方边缘环180包含一个或多个特征。在一些实施方式中,下方边缘环180包含设置于下方边缘环180的顶部表面上的多个锥形切口404。多个锥形切口404使得具有下方净化环的遮蔽环182能够对准在处理期间设置在基板凹口之上或以另外方式覆盖所述基板凹口的遮蔽环182的基板凹口盖。在一些实施方式中,可有12个等距间隔(例如,30度)开的锥形切口404。图4B描绘锥形切口404的侧视截面图。在一些实施方式中,每个锥形切口404可以是约0.1至约0.15英寸深。
在一些实施方式中,下方边缘环180包含沿着下方边缘环180的外周边/直径形成的多个斜角切口406。多个斜角切口406便于在腔室内加热器旋转期间使下方边缘环180与上方边缘环116对准。在一些实施方式中,可有12个等距间隔(例如,30度)开的斜角切口406。
在一些实施方式中,下方边缘环180包含在下方边缘环180的底部表面上形成的多个底部对准突部412。多个底部对准突部412便于使下方边缘环180与加热器台座114/120对准。在一些实施方式中,可有3个等距间隔(例如,120度)开的底部对准突部412。
参看图2,图示使用根据本揭示案的一个或多个实施方式的设备的示例性处理配件。在装载或卸载基板110时,基板110由一组升降销152来支撑。尽管在图1中图示了两个升降销152,但本领域技术人员将理解,一般有三个或更多个升降销152以支撑基板110。
基板110经由处理腔室100的侧壁103中的端口112被机器人109带入处理容积108中。端口112可例如是狭缝阀。升高一组升降销152至图2所示的装载/卸载位置中且将基板110放置于升降销152上。升降销152可穿过台座114和热元件120的主体中的开口。在未使用时,可在处理期间降低升降销152以让路。升降销152可以是连接至轴件121的升降销组件156的部分,使得升降销组件156与轴件121一起旋转且保持与台座114中的开口对准。
如图1所示,升降销152被降低,此举将基板110降低至上方边缘环116上。上方边缘环116具有用以支撑基板110的外周边边缘的内唇部161(如图3B所示)。上方边缘环116是具有中央开口314的大体环形,中央开口314由环的内径来界定。内唇部161形成在上方边缘环116的内径处。
一些实施方式的台座114包含围绕台座114的外周边边缘的周边肩部122。一些实施方式的周边肩部122经调整大小以在具有小空隙的情况下适配在上方边缘环116的外径318内。例如,所述空隙可小于或等于约5mm、4mm、3mm、2mm、1mm或0.5mm。
在一些实施方式中,上方边缘环116的唇部161经调整大小以在等于或低于主要基板支撑件113的支撑表面118的水平面(或高度)处搁置在台座114的周边肩部122上。唇部161与支撑表面118之间的高度差可例如是约1mm至约10mm,或例如约0.04英寸至约0.40英寸。
上方边缘环116具有用以在处于降低的位置时支撑上方边缘环116的足部165。在一些实施方式中,足部165(包含足部与唇部161之间的上方边缘环116的主体)经调整大小以在台座处于解耦位置时将边缘环支撑在台座114上方。在一个或多个实施方式中,具有位于处理腔室100内的底板169。底板169可被布置并经调整大小以接触边缘环116的足部165,进而停止上方边缘环116的向下运动。可调整底板169的大小以改变上方边缘环116的唇部161可调整的最低高度。
可根据例如处理腔室的部件、边缘环的大小、及最低高度处的唇部的位置将底板169放置于任何合适的位置中。在一些实施方式中,将底板169与处理腔室100的底部105相邻放置。在一些实施方式中,处理腔室包含反射器以朝向台座114或上方边缘环116反射辐射能。在一个或多个实施方式中,底板169是与反射器相同的部件。
关于图5描述底板169的细节,图5描绘底板169的俯视图。底板169包含具有中央开口514的环状主体501。底板169包含底部突出部512。在一些实施方式中,底板169具有约12.0英寸至约15.0英寸的内径520及约12.5英寸至约15.5英寸的外径522。在一些实施方式中,底部突出部512中央开口的内径524是约10.5英寸至约13.5英寸。
在一些实施方式中,底板169包含如图5所示的一个或多个特征。在一些实施方式中,底板169包含沿着底板169的外径的周边突出的一个或多个置中突部504。在一些实施方式中,可有3个等距间隔(例如,120度)开的置中突部504。置中突部504便于相对于腔室主体对准/置中底板。多个置中突部的每个的顶部表面可用作着陆垫516。着陆垫516用于在基板解耦期间以最小的来自上方边缘环116的热散失来接触并支撑上方边缘环116。因此,着陆垫516可由最小化在接触时来自上方边缘环116的热散失的材料或涂层来形成。
在一些实施方式中,底板169包含沿着底板169的外周边/直径形成的多个斜角切口502(相似于斜角切口406)。多个斜角切口502提供空隙且在腔室内加热器旋转期间实现腔室的顶部区段与底部区段之间的快速压力均等化。在一些实施方式中,可有12个等距间隔(例如,30度)开的斜角切口502。
在一些实施方式中,可沿着底板169的外周边/直径形成一个或多个对准突部506以使底板与例如泵送衬垫对准。
关于图6A及图6B详细描述前面提及的遮蔽环182。特定地,图6A描绘遮蔽环182的仰视图。遮蔽环182包含具有下方表面608和中央开口614的环状主体610。在一些实施方式中,遮蔽环182具有约10英寸至约13英寸的内径632及约12.5英寸至约15.5英寸的外径630。
遮蔽环182包含如图3A至图3B所示的一个或多个特征。在一些实施方式中,遮蔽环182在环状主体610的内径632处包含一个或多个顶部特征620。在一些实施方式中,顶部特征620可以是环状斜角边缘618。
在一些实施方式中,遮蔽环182包含从下方表面608向下延伸的一个或多个对准销602。对准销602便于在将加热器台座114移动至基板处理位置时使遮蔽环182与上方边缘环116对准。在一些实施方式中,可有三个等距间隔(例如,120度)开的对准销602。在一些实施方式中,对准销602可从下方表面608向下延伸约0.1英寸至约0.5英寸。
在一些实施方式中,遮蔽环182包含从下方表面608向下延伸的一个或多个对准突部604。对准突部604便于例如在从遮蔽环182解耦加热器台座114期间使遮蔽环182与泵送衬垫对准。在一些实施方式中,可有三个等距间隔(例如,120度)开的对准突部304。在一些实施方式中,对准突部604可从下方表面608向下延伸约0.1英寸至约0.3英寸。
在一些实施方式中,遮蔽环182包含从内径632边缘向内延伸的一个或多个凹口盖特征606。凹口盖606在处理期间覆盖基板凹口以防止穿过凹口开口沉积于加热器台座114上。
返回参看图1及图2,在与本揭示案一致的实施方式中,升高主要基板支撑件113,使得支撑表面118接触基板110的底侧,进而热耦接支撑表面118与基板110。在提升主要基板支撑件113期间,边缘环的唇部161接触台座114的周边肩部122。上方边缘环116可通过经由周边肩部122而与台座114接触并相互作用而在垂直方向(z轴)中移动。在一些实施方式中,上方边缘环116仅通过与台座114相互作用而可在垂直方向(z轴)中移动。换句话说,在一些实施方式中,上方边缘环116不具有独立的升降机构或致动器。
主要基板支撑件113被升至足够高以使上方边缘环116的足部165停止与底板169接触。上方边缘环116的唇部可放置于靠近基板110的周边肩部122内,使得基板110实质上与支撑表面118完全接触。上方边缘环116的唇部161可稍微低于支撑表面118,使得存在小间隙。可最小化所述间隙使得对处理均匀性仅有微小的或无影响。
已描述了其中利用仅在升降销152降低时接触基板的上方边缘环116装载基板110的处理。然而,本领域技术人员将理解,此仅为代表性的一个可能方法且不应视为限制本揭示案的范围。在一些实施方式中,升高主要基板支撑件113或降低升降销152,使得基板与支撑表面118同时或在上方边缘环116的唇部161之前接触。
基板可在处于耦接的位置时处理。处理腔室100可以是沉积腔室、蚀刻腔室、离子注入腔室、等离子体处理腔室或热处理腔室等。在图1所示的实施方式中,处理腔室是沉积腔室且包含喷淋头组件128。处理容积108可与真空系统130选择性流体连通以控制其中的压力。喷淋头组件128可耦接至处理气体源132以向处理容积108提供处理气体以用于沉积材料至基板110上。喷淋头组件128也可包含温度控制组件134以用于控制喷淋头组件128的温度。温度控制元件134可以是与冷却剂源136流体连通的流体通道。
为了应对可出现在基板110的表面上的热不均匀性(可通过监控基板110的温度来确定),可相对于支撑表面118重新放置基板110。出现在基板110的表面上的热或冷点指示台座主体的支撑表面118中或上的热或冷点。
在将基板110处理至某种预定程度之后,降低主要基板支撑件113以将支撑表面118与基板110解耦。所述解耦造成上方边缘环116在处理腔室100中降低,使得足部165接触底板169。一旦足部165搁置在底板169上,上方边缘环116即停止在向下方向中的移动。在上方边缘环116停止的情况下,台座114(及支撑表面118)的进一步向下移动造成基板110由上方边缘环116支撑且自支撑表面118解耦。随着进一步降低支撑表面118,在支撑表面118与基板110之间产生间隙。在一些实施方式中,上方边缘环116可随主要支撑基板113的移动一起移动且不可独立移动。
一旦解耦,则利用致动器126使主要基板支撑件113旋转预定量。在旋转之后,将主要基板支撑件113向上移动至基板110与支撑表面118碰触的位置来将解耦的基板110和支撑表面118重新耦接。重复此耦接/处理/解耦/旋转循环直到完成处理。
主要基板支撑件113每次旋转总量的第1/n,其中n是沉积时间的分数或旋转度的一个或多个。例如,若n是四倍(four-fold)旋转度,则主要基板支撑件113将绕着轴A旋转90度。基于关于耦接/处理/解耦的重复次数,旋转度是在分开步骤中发生以等于完整的360度圆的旋转量。若重复12次耦接/解耦,则主要基板支撑件113将每次旋转360度的1/12或30度。
在一些实施方式中,n基于用于处理的预定沉积时间。例如,若十分钟的处理重复十次耦接/解耦,则主要基板支撑件113应每次旋转36度,使得处理结束时进行了完整的360度圆。
在一些实施方式中,耦接/处理/解耦/旋转重复总共发生Xn次,其中n是沉积时间的分数或旋转度的一个或多个且X是正整数。例如,若每次重复期间使主要基板支撑件113旋转90度,则n应是360度/90度或4以进行完整的圆。可进行完整的圆多于一次,使得X大于1。例如,若每次重复期间主要基板支撑件113旋转90度且总共有8次重复,则n应是360度/90度=4且N应是2;意指主要基板支撑件113发生了两次完整的转圈。
在另一实施方式中,台座114可以是静电吸盘且台座114可包含一个或多个电极125(如图1所示)。例如,台座114可耦接至功率元件140A,功率元件140A可以是向一个或多个电极125提供功率的电压源。电压源可以是射频(RF)控制器或直流(DC)控制器。在另一示例中,台座114可由导电材料制成且用作用于由喷淋头组件128分配的来自功率元件140B的RF功率的接地路径。因此,处理腔室100可利用RF或DC等离子体执行沉积或蚀刻处理。由于这些类型的等离子体可能不会完美地同心或对称,因此RF或DC热点(亦即,电磁热点)可出现在基板110上。这些电磁热点可在基板110的表面上产生不均匀的沉积或不均匀的蚀刻速率。
尽管上文关于本发明的实施方式,但可在不脱离本发明的基本范围的情况下设计本发明的其他及进一步实施方式。
Claims (15)
1.一种用于与可旋转基板支撑件加热器台座一起使用以用于在处理腔室中支撑基板的处理配件,所述处理配件包括:
上方边缘环,所述上方边缘环包含整体地形成的顶部突出部和裙部,其中所述裙部从所述顶部突出部向下延伸,并且其中所述上方边缘环包含一个或多个对准孔洞;
下方边缘环,所述下方边缘环至少部分支撑所述上方边缘环且在所述基板支撑件加热器台座处于升高的处理位置时使所述上方边缘环与所述基板支撑件加热器台座对准,其中所述下方边缘环完全设置在所述裙部的内径内,并且其中所述下方边缘环包含设置于所述下方边缘环的顶部表面上的多个锥形切口;
底板,所述底板设置于所述处理腔室的底部上,所述底板在所述基板支撑件加热器台座处于降低的非处理位置时支撑所述上方边缘环;以及
遮蔽环,所述遮蔽环在所述基板支撑件加热器台座处于升高的处理位置时与所述上方边缘环耦接,其中所述遮蔽环包含一个或多个对准销,所述一个或多个对准销从所述遮蔽环的下方表面向下延伸且穿过所述上方边缘环的相应的所述一个或多个对准孔洞而进入设置于所述下方边缘环的所述顶部表面上的所述多个锥形切口,使得在所述基板支撑件加热器台座处于升高的处理位置时所述上方边缘环、下方边缘环和遮蔽环全部对准。
2.如权利要求1所述的处理配件,其中所述上方边缘环环绕所述基板支撑件加热器台座。
3.如权利要求1所述的处理配件,其中所述上方边缘环的所述顶部突出部被配置成以与所述基板支撑件加热器台座的支撑表面成间隔开的关系来支撑所述基板,以便于相对于所述基板支撑件加热器台座的所述支撑表面来重新放置所述基板。
4.如权利要求1所述的处理配件,其中所述裙部覆盖所述基板支撑件加热器台座的外边缘,以防止热从所述基板支撑件加热器台座散失。
5.如权利要求1所述的处理配件,其中所述裙部的高度是1英寸至3英寸。
6.如权利要求1所述的处理配件,其中所述上方边缘环的所述裙部具有12英寸至15英寸的内径及12.5英寸至15.5英寸的外径,且其中所述顶部突出部中央开口的内径是10.5英寸至13.5英寸。
7.如权利要求1所述的处理配件,其中所述上方边缘环的所述顶部突出部包含内唇部以支撑所述基板的外周边边缘。
8.如权利要求1所述的处理配件,其中所述上方边缘环在所述顶部突出部的所述内径处包含一个或多个顶部特征,且其中所述顶部特征是环状斜角边缘,使得在所述基板与所述上方边缘环之间维持15密耳至25密耳的间隙,以便于加热器边缘气体净化。
9.如权利要求1所述的处理配件,其中所述上方边缘环包含从所述顶部突出部的下方表面向下延伸的一个或多个对准突部,以便于使所述上方边缘环与所述下方边缘环对准。
10.如权利要求1至9中任一项所述的处理配件,其中所述下方边缘环包含环状主体,所述环状主体具有中央开口和内表面,且其中所述下方边缘环具有11英寸至14英寸的内径及12英寸至15英寸的外径。
11.如权利要求1至9中任一项所述的处理配件,其中所述下方边缘环包含设置于所述下方边缘环的顶部表面上的多个锥形切口,以便于对准所述遮蔽环,且其中所述多个锥形切口等距间隔开。
12.如权利要求1至9中任一项所述的处理配件,其中所述上方边缘环在所述裙部的所述底部处包含足部,且其中在所述基板支撑件加热器台座处于降低的非处理位置时,所述底板接触所述上方边缘环的所述足部以停止所述上方边缘环的向下移动。
13.如权利要求1至9中任一项所述的处理配件,其中所述底板包含沿着所述底板的外径的周边突出的一个或多个置中突部,以便于使所述底板相对于所述处理腔室主体置中。
14.一种用于在处理腔室中支撑基板的可旋转基板支撑件加热器台座及处理配件,包括:
主要基板支撑件,所述主要基板支撑件具有支撑表面以在处理期间支撑所述基板,其中所述基板支撑件加热器台座包含连接至致动器的轴件以垂直地及绕所述轴件的轴旋转地移动所述基板支撑件加热器台座;以及
处理配件,包括:
上方边缘环,所述上方边缘环包含整体地形成的顶部突出部和裙部,其中所述裙部从所述顶部突出部向下延伸,其中所述上方边缘环的所述顶部突出部被配置成以与所述基板支撑件加热器台座的支撑表面成间隔开的关系来支撑所述基板,以便于相对于所述基板支撑件加热器台座的所述支撑表面来重新放置所述基板,其中所述上方边缘环包含一个或多个对准孔洞,且其中所述上方边缘环包含从所述顶部突出部的下方表面向下延伸的一个或多个对准突部;以及
下方边缘环,所述下方边缘环至少部分支撑所述上方边缘环且在所述基板支撑件加热器台座处于升高的处理位置时使所述上方边缘环与所述基板支撑件加热器台座对准,其中所述下方边缘环完全设置在所述裙部的内径内,其中所述下方边缘环包含设置于所述下方边缘环的顶部表面上的多个锥形切口,其中所述下方边缘环包含形成在所述下方边缘环的外径上的多个斜角切口,其中所述多个斜角切口等距间隔开,并且其中在所述基板支撑件加热器台座处于升高的处理位置时所述上方边缘环的所述一个或多个对准突部设置在形成于所述下方边缘环中的对应数量的所述多个斜角切口中;及
遮蔽环,所述遮蔽环在所述基板支撑件加热器台座处于升高的处理位置时与所述上方边缘环耦接,其中所述遮蔽环包含一个或多个对准销,所述一个或多个对准销从所述遮蔽环的下方表面向下延伸且穿过所述上方边缘环的相应的所述一个或多个对准孔洞而进入设置于所述下方边缘环的所述顶部表面上的所述多个锥形切口,使得在所述基板支撑件加热器台座处于升高的处理位置时所述上方边缘环、下方边缘环和遮蔽环全部对准。
15.如权利要求14所述的可旋转基板支撑件加热器台座及处理配件,其中所述处理配件进一步包含:
底板,所述底板设置于所述处理腔室的底部上,所述底板在所述基板支撑件加热器台座处于降低的非处理位置时支撑所述上方边缘环。
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US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
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KR102232800B1 (ko) | 2021-03-25 |
TW201834113A (zh) | 2018-09-16 |
US10704147B2 (en) | 2020-07-07 |
KR20190082333A (ko) | 2019-07-09 |
WO2018102492A1 (en) | 2018-06-07 |
CN110062954A (zh) | 2019-07-26 |
US20180155838A1 (en) | 2018-06-07 |
TWI756309B (zh) | 2022-03-01 |
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