TWM589358U - 半導體製程模組的頂環 - Google Patents

半導體製程模組的頂環 Download PDF

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TWM589358U
TWM589358U TW108207722U TW108207722U TWM589358U TW M589358 U TWM589358 U TW M589358U TW 108207722 U TW108207722 U TW 108207722U TW 108207722 U TW108207722 U TW 108207722U TW M589358 U TWM589358 U TW M589358U
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top ring
process module
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semiconductor process
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喬安娜 吳
韓慧玲
克利斯多夫 肯伯
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美商蘭姆研究公司
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Abstract

本發明提出在製程模組內所用之升降頂桿機構，該升降頂桿機構包括複數升降頂桿，該等升降頂桿沿著界定在製程模組中之下電極之圓周均勻分佈。每一升降頂桿包括頂部構件，該頂部構件藉由被倒角界定之軸環與底部構件分離。套筒係界定在下電極之主體內之殼體中，其中基板在下電極上被接收以進行製程。殼體設置於界定在下電極中之中環下方。升降頂桿之軸環係用於與套筒之底側接合，且套筒之頂側係配置以在升降頂桿啟動時與中環接合。致動器係用於驅動複數升降頂桿，其中致動器耦接至複數升降頂桿之每一者及致動器驅動部，致動器驅動部連接至致動器。控制器係耦接至致動器驅動部以控制複數升降頂桿之運動。

Description

半導體製程模組的頂環
本發明係有關在半導體製程模組中所用之環。 [相關申請案之交互參照]
本申請案係關於2019年5月10日提出且題為「Automated Process Module Ring Positioning and Replacement」之美國臨時專利申請案第62/846,579號，並主張其優先權，其完整內容係併入本申請案中之參考資料。
用於處理半導體基板之典型基板處理系統包括：基板儲存盒（亦稱「基板儲存站」或前開式晶圓傳送盒（FOUP）），用於傳送及儲存基板；設備前端模組（EFEM），連接在FOUP及一或更多載入載出室（亦稱為「氣閘」）之第一側之間；真空傳輸模組，耦接至一或更多氣閘之第二側；及一或更多製程模組，耦接至真空傳輸模組。每一製程模組係用於執行特定的製造操作，例如清潔操作、沉積、蝕刻操作、清洗操作、乾燥操作等。用於執行這些操作之化學物質及/或製程環境導致對製程模組中一些硬體構件之損壞，該等硬體構件經常暴露於製程模組內之嚴苛環境。
需要定期且迅速地更換損壞或磨損之硬體構件，以確保這些損壞的構件在半導體基板處理期間不會將製程模組中其他下覆的硬體構件暴露於嚴苛的環境。硬體構件可為例如頂環、中環或其他可在製程模組內相鄰半導體基板而設置之環，例如邊緣環。在蝕刻操作期間，頂環基於其位置可能因連續暴露於電漿之離子轟擊而被損壞或消耗，其中該電漿係在用於蝕刻操作之製程模組內產生。需要迅速更換損壞或使用過的環，以確保損壞的頂環不會暴露其他下覆的硬體構件（例如靜電夾盤或基座之其餘構件）於嚴苛的製程環境。可更換之硬體構件在本文中稱為消耗部件。
現今的頂環在不將製程模組打開至大氣環境的情況下將不易被移除。此缺點之原因在於它們的形狀無法有效地藉由製程模組內之自動化工具進行處理，亦無法有效地藉由終端效應器機械臂進行相關處理。
本發明實施例於此背景下產生。
本發明實施例界定在基板處理系統之製程模組內所用之升降頂桿機構，該升降頂桿機構係設計以移除及更換在基板處理系統內設置之製程模組之損壞的硬體構件，例如頂環（例如，邊緣環）及中環，而不需要破真空（意即，將基板處理系統暴露於大氣環境）。可更換之損壞的硬體構件在本文中亦稱為消耗部件。基板處理系統包括一或更多製程模組，每一製程模組被配置以執行半導體基板處理操作。由於製程模組中之消耗部件暴露於內部嚴苛的化學品及製程環境，消耗部件會損壞並需要及時地更換。必須迅速地更換損壞的消耗部件，以避免損害製程模組之下覆的硬體構件。
藉由將可拆卸的環儲存站安裝至基板處理系統，可在不打開基板處理系統之情況下更換損壞的消耗部件（例如，頂環/邊緣環或中環）。環儲存站類似於基板儲存站，該基板儲存站提供用於製程之基板。環儲存站包括複數水平堆疊之隔間，用於接收及儲存消耗部件（意即，新的及使用過的消耗部件）。環儲存站及製程模組耦接至控制器，以使控制器能協調環儲存站及各種製程模組之使用，同時保持製程模組在真空狀態，以允許更換各製程模組中之消耗部件。
為了容易地取放損壞的消耗部件，基板處理系統之製程模組係設計為包括升降頂桿機構。當接合時，升降頂桿機構係配置以允許消耗部件從安裝位置移動至更換位置，使基板處理系統內之機械臂之終端效應器可接近並取回從製程模組中上升之消耗部件。從環儲存站取得替換用消耗部件（意即，新的消耗部件）並將其傳送至製程模組，而升降頂桿機構用於接收新的消耗部件並將其降低至製程模組中之適當位置。
環儲存站及基板處理系統之設計使為了取放損壞的消耗部件而得將基板處理系統打開至大氣環境之需求不復存在。例如，基板處理系統可包括維持在大氣環境下之設備前端模組（EFEM）。EFEM之第一側可耦接至一或更多基板儲存站（例如FOUPs），以將基板傳輸至基板處理系統中及從基板處理系統中傳出基板。除了基板儲存站，EFEM之第一側或不同側可耦接至一或更多環儲存站。EFEM之第二側可藉由一或更多載入載出室（例如氣閘）與真空傳輸模組連接。一或更多製程模組可耦接至真空傳輸模組。
EFEM之機械臂可用於在環儲存站及氣閘之間傳輸消耗部件。在此實施例中，氣閘作為中介點，當氣閘保持在大氣環境下時允許從EFEM接收消耗部件。在接收消耗部件之後，將氣閘抽至真空，並使用真空傳輸模組之機械臂將消耗部件移至製程模組。真空傳輸模組之機械臂用於將消耗部件移至製程模組中。製程模組內之升降頂桿機構藉由升高及降低消耗部件以提供消耗部件之取放，因此可在真空環境下藉由真空傳輸模組之機械臂以執行消耗部件之更換。
真空傳輸模組之機械臂及製程模組之升降頂桿機構共同允許精確地傳送及取回消耗部件，從而消除在消耗部件更換期間對製程模組之任何硬體構件之損壞風險。當消耗部件以受控方式移入製程模組中時，在更換損壞的消耗部件之後，重新調整製程模組以使其進入有效操作狀態所需的時間大幅減少。
在替代實施例中，環儲存站可保持在真空，並直接地、或藉由基板處理系統之真空傳輸模組而耦接至製程模組。真空傳輸模組之機械臂可用於在環儲存站及製程模組之間移動消耗部件而不破壞真空，從而可在沒有污染風險之情況下更換消耗部件。因此，在更換損壞的消耗部件之後，重新調整製程模組以使其進入有效操作狀態所需的時間大幅減少。
在一實施例中，揭露一種升降頂桿機構。升降頂桿機構用於基板處理系統之製程模組內，且用於交換處理模組之消耗部件（例如頂環或中環）。升降頂桿機構包括複數升降頂桿，該等升降頂桿沿著界定在製程模組中之下電極（例如基座或靜電夾盤）之圓周均勻分佈。每一升降頂桿包括頂部構件及底部構件。頂部構件藉由以倒角界定之軸環與底部構件分離。頂部構件係配置以延伸穿過界定在殼體中之套管，並與製程模組中所用之頂環之下側表面接合，其中該殼體位於製程模組中之下電極之主體內。升降頂桿之軸環係配置與套筒之底表面接合。當複數升降頂桿啟動時，套筒之頂表面係配置與中環之底側接合。致動器耦接至複數升降頂桿中之每一者。致動器係連接至致動器驅動部，該致動器驅動部提供動力以驅動致動器。控制器耦接至致動器驅動部並配置以提供控制信號以控制複數升降頂桿之運動。
在另一實施例中，揭露一種在基板處理系統內所用之製程模組。製程模組包括頂部電極，該頂部電極具有沿著水平面均勻分佈之複數引出口。複數引出口連接至製程化學物源，並配置以向製程模組提供製程化學物以產生電漿。頂部電極為電接地。下電極相對於頂部電極而設置，且該下電極係配置以支撐接收之基板以進行處理。下電極連接至電源以提供電力而產生電漿。下電極包括設置在靠近外邊緣之主體內之底環。殼體從底環之頂表面向下延伸至底環之主體中。殼體係配置以容納套筒。中環設置在底環之正上方並與底環對齊。中環包括從中環頂表面垂直延伸至中環底表面之通道。頂環設置在中環之正上方並與中環對齊，使得當基板在下電極上被接收時，頂環之頂表面與基板之頂表面共平面。升降頂桿機構界定在下電極之主體中。升降頂桿機構包括複數升降頂桿。每一升降頂桿包括頂部構件及底部構件。頂部構件藉由以倒角界定之軸環與底部構件分離。複數升降頂桿沿著下電極之圓周均勻分佈，以與底環、中環及頂環對齊。致動器耦接至每一升降頂桿。複數升降頂桿之致動器連接至致動器驅動部，該致動器驅動部提供動力以驅動致動器。
藉由以下之詳細描述並結合附圖，本發明之其他態樣將變得顯而易見，附圖藉由範例之方式以顯示本發明之原理。
圖1顯示在半導體製程模組中所用之頂環100之立體俯視圖。頂環100係配置以沿著基板支撐件之周邊設置，使得當基板在製程模組中被接收時，頂環係緊鄰基板設置。頂環為可調整及可替換的邊緣環，在一實施例中，亦包括延伸出基板之表面邊緣之表面。
圖2為頂環100之俯視圖。頂環100之頂側具有面向電漿之表面，該表面在頂環100之內邊緣113及外邊緣112之間延伸。頂環100係鄰近製程模組內之基板而設置，使得當在製程模組中接收基板時，頂環之面向電漿之表面與基板之頂表面共平面，以延伸基板之邊緣排除區域。
圖3為製程模組中所用之頂環100之仰視圖，並顯示頂環100之下側表面之細節。頂環100之下側表面包括界定在頂環100之內邊緣113及外邊緣112之間之通道103。一組溝槽105a-105c沿著外邊緣112徑向均勻地設置，使溝槽105a-105c通向通道103。在圖3所示之實施例中，溝槽係彼此相距約120 o而設置。溝槽105a-105c係設置以提供徑向對準。每一溝槽包括會合至一尖端之具斜角之複數側壁。每一溝槽係用於接合在製程模組內實施之升降頂桿，以升高及降低頂環100。每一升降頂桿接觸相應的溝槽於尖端處。因此，每一溝槽中之尖端界定頂桿接觸位置212'。
圖4顯示頂環之側視圖。
圖5顯示頂環之橫剖面圖。橫剖面圖顯示界定在頂環100之頂側上之面向電漿之表面及沿著頂環100之下側表面中間延伸之通道103。
圖6顯示界定在頂環100之下側表面上之通道103之放大橫剖面圖。在一些實施例中，界定在頂環100之外邊緣112並連接至面向電漿之表面118之頂側表面114為倒角。在一些實施例中，界定在頂環100之外邊緣112並連接至下側119之底側表面115為圓弧形。在一些實施例中，界定在頂環100之內邊緣113並連接至下側119之底側表面117為圓弧形。在一實施例中，界定在頂環100之內邊緣113並連接至面向電漿之表面118之頂側表面116為圓弧形。
圖7顯示溝槽105之放大圖，溝槽105係界定在頂環100之外邊緣112及在頂環100之下側表面上界定之通道103之間。溝槽105通向通道103。溝槽105包括具斜角之側壁213a、213b，其界定會合至尖端（例如頂桿接觸位置212'）之開口。在一些實施例中，具斜角之側壁213a、213b界定V形溝槽。當被包括在製程模組中之升降頂桿啟動時，在界定頂桿接觸位置212'之尖端處與相應的溝槽105a-105c接合。在替代實施例中，側壁213a、213b可被界定為包括沿著圓形邊緣會合至尖端之開口。在這樣的實施例中，具有圓弧形邊緣之側壁界定U形溝槽。
圖8顯示頂環在設置溝槽105之尖端處之徑向橫剖面圖。垂直橫剖面圖標識設置溝槽105之側壁213之角度θ o。側壁213之角度允許製程模組之升降頂桿與對應的溝槽105接合並滑入界定在對應的溝槽105中之頂桿接觸位置212'。徑向橫剖面圖亦標識了界定在頂環100之頂側上之面向電漿之表面211、以及在頂環100之下側表面上與溝槽105相鄰界定之通道103。
圖9顯示溝槽105之周向橫剖面圖。溝槽105包括具斜角之側壁213a、213b，其界定會合至尖端212'之開口。在一實施例中，溝槽105之側壁213a、213b之間之角度顯示為β o，第一側壁213a與法線間之角度顯示為β o/ 2。
100‧‧‧頂環 103‧‧‧通道 105‧‧‧溝槽 105a,105b,105c‧‧‧溝槽 112‧‧‧外邊緣 113‧‧‧內邊緣 114‧‧‧頂側表面 115‧‧‧底側表面 116‧‧‧頂側表面 117‧‧‧底側表面 118‧‧‧面向電漿之表面 119‧‧‧下側 211‧‧‧面向電漿之表面 212'‧‧‧頂桿接觸位置 213‧‧‧側壁 213a,213b‧‧‧具斜角之側壁 θo‧‧‧角度 βo‧‧‧角度
圖1為根據本發明之半導體製程模組頂環之立體俯視圖；
圖2為其俯視圖；
圖3為其仰視圖；
圖4為其側視圖；
圖5為圖3之橫剖面圖；
圖6為標識在圖5中之頂環邊緣之橫剖面圖之放大圖；
圖7為標識在圖3中界定在頂環下側表面上之溝槽之放大圖；
圖8為圖7之溝槽之徑向橫剖面圖；及
圖9為圖7之溝槽之周向橫剖面圖。
103‧‧‧通道
105‧‧‧溝槽
211‧‧‧面向電漿之表面
212'‧‧‧頂桿接觸位置
213‧‧‧側壁

Claims (9)

  1. 一種用於半導體製程模組之頂環，該頂環係配置以沿著該半導體製程模組之一基板支撐件之一周邊而放置，該頂環之特徵在於： 該頂環之一頂側具有在該頂環之一內邊緣及一外邊緣之間延伸之一面向電漿的表面； 該頂環之一下側具有設置在該頂環之該內邊緣及該外邊緣之間之一通道；及 一組溝槽設置在該通道及該外邊緣之間之該下側上。
  2. 如申請專利範圍第1項之用於半導體製程模組之頂環，其中該組溝槽之每一者由複數具斜角的側壁界定，其中該等具斜角的側壁形成會合至一尖端之一開口。
  3. 如申請專利範圍第2項之用於半導體製程模組之頂環，其中會合至該尖端之該等具斜角的側壁界定複數V型溝槽。
  4. 如申請專利範圍第1項之用於半導體製程模組之頂環，其中該組溝槽之每一者係用於連接至在該製程模組內實施之複數升降頂桿，用於升高及降低該頂環。
  5. 如申請專利範圍第1項之用於半導體製程模組之頂環，其中該頂環具有一徑向橫剖面，該徑向橫剖面標識由該等具斜角的側壁所形成之該尖端所設置之該組溝槽中之一者。
  6. 如申請專利範圍第1項之用於半導體製程模組之頂環，其中該頂環具有一周向橫剖面，該周向橫剖面暴露該頂側之該面向電漿的表面及在該下側之該通道。
  7. 如申請專利範圍第1項之用於半導體製程模組之頂環，其中被界定在該頂環之該外邊緣並連接至該面向電漿的表面之一頂側表面為倒角。
  8. 如申請專利範圍第1項之用於半導體製程模組之頂環，其中被界定在該頂環之該外邊緣並連接至該下側之一底側表面為圓弧形。
  9. 如申請專利範圍第1項之用於半導體製程模組之頂環，其中被界定在該頂環之該內邊緣並連接至該下側之一底側表面為圓弧形；及 其中被界定在該頂環之該內邊緣並連接至該面向電漿的表面之一頂側表面為圓弧形。
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