CN210897237U - 用于半导体处理模块的中环 - Google Patents

用于半导体处理模块的中环 Download PDF

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CN210897237U
CN210897237U CN201921131072.4U CN201921131072U CN210897237U CN 210897237 U CN210897237 U CN 210897237U CN 201921131072 U CN201921131072 U CN 201921131072U CN 210897237 U CN210897237 U CN 210897237U
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middle ring
ring
channel
processing module
annular protrusion
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乔安娜·吴
韩慧玲
克里斯托弗·金博尔
吉姆·塔潘
格里菲·奥尼尔
约翰·德鲁厄里
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Lam Research Corp
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Abstract

本实用新型涉及一种用于半导体处理模块的中环，所述中环配置成放置在顶环下方，所述中环配置成围绕所述半导体处理模块的衬底支撑件，其中所述中环的底表面是平坦的；顶表面具有：限定在所述中环的外边缘和内边缘之间的环形突起，当所述顶环设置在所述中环上方时，所述环形突起构造成与所述顶环的通道配合；限定在所述中环的所述内边缘和所述环形突起之间的内通道；以及限定在所述中环的所述外边缘和所述环形突起之间的外通道，所述外通道从所述中环的所述底表面延伸到所述顶表面，其中所述环形突起设置在所述内通道和所述外通道之间。

Description

用于半导体处理模块的中环
优先权要求
本实用新型要求2019年5月10日提交的题为“Automated Process Module RingPositioning and Replacement”的美国临时专利申请号62/846,579的优先权，该美国临时专利申请通过引用并入本文。
技术领域
本实用新型涉及一种用于半导体处理模块的环。
背景技术
在处理半导体衬底中使用的典型衬底处理系统包括用于传送和存储衬底的衬底存储盒[另外称为“衬底存储站”或前开口统一盒(FOUP)]、接合在FOUP与一个或多个负载锁定室(也称为“气闸”)的第一侧之间的设备前端模块(EFEM)、耦合到一个或多个气闸的第二侧的真空传输模块，以及耦合到真空传输模块的一个或多个处理模块。每个处理模块用于执行特定的制造操作，例如清洁操作、沉积、蚀刻操作、漂洗操作、干燥操作等。用于执行这些操作的化学品和/或处理条件导致处理模块的一些硬件组件破损，这些硬件组件经常暴露于处理模块中的恶劣条件。
需要定期且及时地更换破损或磨损的硬件组件，以确保这些破损的组件在半导体衬底处理期间不会将处理模块中的其他下层硬件组件暴露于恶劣条件。硬件组件可以是例如顶环、中环、或其他这样的环(例如边缘环)，其可以与处理模块内的半导体衬底相邻地设置。在蚀刻操作期间，顶环基于其位置可能由于其连续暴露于来自等离子体的离子轰击而破损或消耗，该等离子体在蚀刻操作中使用的处理模块内生成。破损或使用过的环需要立即更换，以确保破损的顶环不会使其他下层硬件组件(例如静电卡盘或基座的其余组件)暴露于恶劣的处理条件。可以更换的硬件组件在本文中称为可消耗部件。
目前的顶环，其缺点在于，在不将处理模块打开至真空的情况下不能轻易地移除。这种缺点的原因在于，它们的形状使得不能通过自动化工具在处理模块内进行有效搬运(handling)，也不能通过末端执行器机器人进行相关搬运。
正是在这种背景下，出现了本实用新型的实施方案。
实用新型内容
本实用新型公开了一种用于半导体处理模块的中环，所述中环配置成放置在顶环下方，所述中环配置成围绕所述半导体处理模块的衬底支撑件，所述中环的特征在于，底表面是平坦的；顶表面具有：限定在所述中环的外边缘和内边缘之间的环形突起，当所述顶环设置在所述中环上方时，所述环形突起构造成与所述顶环的通道配合；限定在所述中环的所述内边缘和所述环形突起之间的内通道；以及限定在所述中环的所述外边缘和所述环形突起之间的外通道，所述外通道从所述中环的所述底表面延伸到所述顶表面，其中所述环形突起设置在所述内通道和所述外通道之间。
一方面，所述外通道包括底部和顶部，所述外通道的所述底部的尺寸设计成允许在所述处理模块内实现的升降销的顶部延伸通过。
一方面，所述底部的宽度小于所述外通道的所述顶部的宽度。
一方面，所述中环的底表面配置成与在所述处理模块中限定的底环的顶表面配合。
一方面，所述中环的所述顶表面的轮廓与所述顶环的底表面的轮廓互补，所述顶环设置在所述处理模块内的所述中环的正上方。
一方面，顶侧表面经圆角处理，所述顶侧表面限定在所述中环的所述外边缘处并连接到所述顶表面。
一方面，底侧表面经圆角处理，所述底侧表面限定在所述中环的所述外边缘处并连接到所述底表面。
一方面，所述内通道和所述内边缘之间的顶表面低于所述中环的所述环突起的顶表面。
一方面，从底表面到所述外边缘限定台阶。
附图说明
图1是根据本实用新型的半导体处理模块中环的底表面的透视顶视图。
图2是其俯视图；
图3是图1的中环的顶表面的俯视图；
图4是其侧视图；
图5是图3的中环的横截面图；
图6是在图3中所示的中环的边缘的放大横截面视图；
图7是在图1中所示的中环的一部分的放大横截面视图。
具体实施方式
图1示出了半导体处理模块中使用的中环100的底表面的透视顶视图。中环100设置在沿着衬底支撑件的周边定位的顶环下方，使得中环位于处理模块中的顶环的正下方。在一个实施方式中，中环是处理模块的可替换组件。
图2示出了中环100的底表面的顶视图。中环邻近衬底支撑件的内侧壁设置。在一些实施方式中，中环100的内径限定为小于在处理模块内的衬底支撑件上接收的衬底的外径。结果，在衬底支撑件上接收的衬底的一部分在中环上延伸。例如，中环100的内径可以小于设置在中环上方的顶环的内径。在一些实施方式中，中环的外径限定为等于顶环的外径。
图3示出了中环100的顶表面的顶视图。中环100包括顶表面上的一个或多个配合点111，其用于将中环配合到顶环。一个或多个配合点111均匀地分布在顶表面上。在一个实施方式中，配合点111限定在中环的内边缘和外边缘之间的中间(midway)。在一些实施方式中，可以在中环100的底表面上限定额外的配合点，以将中环配合到在处理模块中限定的底环。
图4示出了中环100的侧视图。中环100示出为包括设置在中环100的表面上的配合点111。在示例性图示中，配合点111设置在中环100的底表面上。
图5示出了中环100的横截面视图。参照图6描述了中环100的边缘(在图5中的虚线圆圈内)的细节。
图6示出了图5中标识的中环的边缘的横截面视图的放大视图。中环包括邻近衬底支撑件的侧壁设置的内边缘101a，以及外边缘101b。外边缘101b可以与盖环相邻，该盖环设置在处理模块的衬底支撑件和腔室侧壁之间。中环100包括顶表面105和平坦的底表面106，顶表面105包括多个部件。底表面106配置成与底环(未示出)的顶表面配合。顶表面105包括设置在内边缘101a和外边缘101b之间的环形突起103。环形突起103限定为与限定在顶环中的通道配合。内通道102限定在内边缘101a和环突起103之间。
外环104限定在环突起103和外边缘101b之间，使得环突起103设置在内通道102和外通道104之间。外通道104在中环100的顶表面105和底表面106之间延伸。外通道104包括底部104a和顶部104b。底部104a的直径(即，宽度)限定为小于外通道104的顶部104b的直径(即，宽度)。底部104a的直径的尺寸被设计成允许包括在处理模块中的提升销的顶部延伸通过，以便当提升销啮合/脱离时，允许提升销升高和降低顶环。在一些实施方式中，对顶侧表面107进行圆角(round)处理，该顶侧表面107限定在中环100的外边缘101b上并且连接到顶表面105。在其他实施方式中，对底侧表面109进行圆角(round)处理，该底侧表面109限定在中环100的外边缘101b处并且连接到底表面106。内通道102和内边缘101a之间的顶表面低于环突起103的顶表面。在一个实施方式中，从底表面106到外边缘101b形成台阶。
图7示出了图1中所示的中环的一部分的横截面1-1的放大视图。该横截面视图示出了在中环的底表面上限定的配合点的轮廓，该底表面是平坦的。中环100的顶表面103的轮廓限定为与包括在处理模块中的顶环的底表面的轮廓互补。

Claims (9)

1.一种用于半导体处理模块的中环，所述中环配置成放置在顶环下方，所述中环配置成围绕所述半导体处理模块的衬底支撑件，所述中环的特征在于，
底表面是平坦的；
顶表面具有：
限定在所述中环的外边缘和内边缘之间的环形突起，当所述顶环设置在所述中环上方时，所述环形突起构造成与所述顶环的通道配合；
限定在所述中环的所述内边缘和所述环形突起之间的内通道；以及
限定在所述中环的所述外边缘和所述环形突起之间的外通道，所述外通道从所述中环的所述底表面延伸到所述顶表面，其中所述环形突起设置在所述内通道和所述外通道之间。
2.根据权利要求1所述的中环，其中所述外通道包括底部和顶部，所述外通道的所述底部的尺寸设计成允许在所述半导体处理模块内实现的升降销的顶部延伸通过。
3.根据权利要求2所述的中环，其中所述底部的宽度小于所述外通道的所述顶部的宽度。
4.根据权利要求1所述的中环，其中所述中环的底表面配置成与在所述半导体处理模块中限定的底环的顶表面配合。
5.根据权利要求1所述的中环，其中所述中环的所述顶表面的轮廓与所述顶环的底表面的轮廓互补，所述顶环设置在所述半导体处理模块内的所述中环的正上方。
6.根据权利要求1所述的中环，其中顶侧表面经圆角处理，所述顶侧表面限定在所述中环的所述外边缘处并连接到所述顶表面。
7.根据权利要求1所述的中环，其中底侧表面经圆角处理，所述底侧表面限定在所述中环的所述外边缘处并连接到所述底表面。
8.根据权利要求1所述的中环，其中所述内通道和所述内边缘之间的顶表面低于所述中环的所述环形突起的顶表面。
9.根据权利要求1所述的中环，其中从底表面到所述外边缘限定台阶。
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