CN210778476U - 用于半导体处理模块的顶环 - Google Patents

用于半导体处理模块的顶环 Download PDF

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CN210778476U
CN210778476U CN201921131022.6U CN201921131022U CN210778476U CN 210778476 U CN210778476 U CN 210778476U CN 201921131022 U CN201921131022 U CN 201921131022U CN 210778476 U CN210778476 U CN 210778476U
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top ring
processing module
ring
outer edge
plasma
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乔安娜·吴
韩慧玲
克里斯托弗·金博尔
吉姆·塔潘
格里菲·奥尼尔
约翰·德鲁厄里
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Lam Research Corp
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Abstract

本实用新型涉及一种用于半导体处理模块的顶环，所述顶环构造成沿着所述半导体处理模块的衬底支撑件的外围放置，其中所述顶环的顶侧具有在所述顶环的内边缘和外边缘之间延伸的面向等离子体的表面；所述顶环的下侧具有设置在所述顶环的所述内边缘和所述外边缘之间的通道；以及一组凹槽设置在所述下侧上在所述通道和所述外边缘之间。

Description

用于半导体处理模块的顶环
优先权要求
本实用新型要求2019年5月10日提交的题为“Automated Process Module RingPositioning and Replacement”的美国临时专利申请号62/846,579的优先权，该美国临时专利申请通过引用并入本文。
技术领域
本实用新型涉及一种用于半导体处理模块的环。
背景技术
在处理半导体衬底中使用的典型衬底处理系统包括用于传送和存储衬底的衬底存储盒[另外称为“衬底存储站”或前开口统一盒(FOUP)]、接合在FOUP与一个或多个负载锁定室(也称为“气闸”)的第一侧之间的设备前端模块(EFEM)、耦合到一个或多个气闸的第二侧的真空传输模块，以及耦合到真空传输模块的一个或多个处理模块。每个处理模块用于执行特定的制造操作，例如清洁操作、沉积、蚀刻操作、漂洗操作、干燥操作等。用于执行这些操作的化学品和/或处理条件导致处理模块的一些硬件组件破损，这些硬件组件经常暴露于处理模块中的恶劣条件。
需要定期且及时地更换破损或磨损的硬件组件，以确保这些破损的组件在半导体衬底处理期间不会将处理模块中的其他下层硬件组件暴露于恶劣条件。硬件组件可以是例如顶环、中环、或其他这样的环(例如边缘环)，其可以与处理模块内的半导体衬底相邻地设置。在蚀刻操作期间，顶环基于其位置可能由于其连续暴露于来自等离子体的离子轰击而破损或消耗，该等离子体在蚀刻操作中使用的处理模块内生成。破损或使用过的环需要立即更换，以确保破损的顶环不会使其他下层硬件组件(例如静电卡盘或基座的其余组件)暴露于恶劣的处理条件。可以更换的硬件组件在本文中称为可消耗部件。
目前的顶环，其缺点在于，在不将处理模块打开至真空的情况下不能轻易地移除。这种缺点的原因在于，它们的形状使得不能通过自动化工具在处理模块内进行有效搬运(handling)，也不能通过末端执行器机器人进行相关搬运。
正是在这种背景下，出现了本实用新型的实施方案。
实用新型内容
本实用新型涉及一种用于半导体处理模块的顶环，所述顶环构造成沿着所述半导体处理模块的衬底支撑件的外围放置，所述顶环的特征在于，所述顶环的顶侧具有在所述顶环的内边缘和外边缘之间延伸的面向等离子体的表面；所述顶环的下侧具有设置在所述顶环的所述内边缘和所述外边缘之间的通道；以及一组凹槽设置在所述下侧上在所述通道和所述外边缘之间。
一方面，所述一组凹槽中的每一个由成角度的侧壁限定，其中所述成角度的侧壁形成会聚到一点的开口。
一方面，会聚到所述点的所述成角度的侧壁限定V形凹槽。
一方面，所述一组凹槽中的每一个用于连接到在所述处理模块内实施的提升销，以提升和降低所述顶环。
一方面，所述顶环具有径向横截面，所述径向横截面标识所述凹槽中的一个，在所述凹槽处设置有由所述成角度的侧壁形成的所述点。
一方面，所述顶环具有周向横截面，所述周向横截面暴露所述顶侧的所述面向等离子体的表面和所述下侧的所述通道。
一方面，顶侧表面经倒角处理，所述顶侧表面限定在所述顶环的所述外边缘处并连接到所述面向等离子体的表面。
一方面，底侧表面经圆角处理，所述底侧表面限定在所述顶环的所述外边缘处并连接到所述下侧。
一方面，底侧表面经圆角处理，所述底侧表面限定在所述顶环的所述内边缘处并连接到所述下侧，并且其中顶侧表面经圆角处理，所述顶侧表面限定在所述顶环的所述内边缘处并连接到面向等离子体的表面。
附图说明
图1是根据本实用新型的半导体处理模块顶环的透视顶视图。
图2是其俯视图；
图3是其仰视图；
图4是其侧视图；
图5是图3的横截面图；
图6是在图5中标识的顶环的边缘的横截面视图的放大视图；
图7是在图3中标识的顶环的下侧表面上限定的凹槽的放大视图；
图8是图7的凹槽的径向横截面视图；以及
图9是图7的凹槽的周向横截面视图。
具体实施方式
图1示出了在半导体处理模块中使用的顶环100的透视顶视图。顶环100构造成沿着衬底支撑件的周边设置，使得当衬底被接收在处理模块中时，顶环紧邻衬底定位。在一种实施方式中，顶环是可调且可更换的边缘环，并且包括延伸衬底的表面边缘的表面。
图2是顶环100的顶视图。顶环100的顶侧具有面向等离子体的表面，该表面在顶环100的内边缘101和外边缘102之间延伸。顶环100与处理模块内的衬底相邻地设置，使得当衬底被接收在处理模块中，顶环的面向等离子体的表面与衬底的顶表面共面，以便延伸衬底的边缘排除区域。
图3是处理模块中使用的顶环100的仰视图，并且示出了顶环100的下侧表面的细节。顶环100的下侧表面包括限定在顶环100的内边缘101和外边缘102之间的通道103。一组凹槽105a-105c沿外边缘102以径向均匀的方式设置，使得凹槽105a-105c通向通道103。在如图3所示的实施方式中，凹槽彼此相距约120°设置。凹槽105a-105c设置成提供径向对准。凹槽中的每一个包括会聚到一点的成角度的侧壁。凹槽中的每一个用于啮合在处理模块内实施的提升销，以提升和降低顶环100。每个提升销在该点处接触相应的凹槽。因此，每个凹槽中的该点限定销接触位置212'。凹槽105的细节(如图3的虚线圆圈中所示的凹槽105a)参考图7进行描述。
图4示出了顶环的侧视图。
图5示出了顶环的横截面视图。横截面视图示出了在顶环100的顶侧上限定的面向等离子体的表面以及沿顶环100的下侧表面的中间行进的通道103。通道103(在图5所示的虚线圆圈中)的细节参考图6进行描述。
图6示出了在顶环100的下侧表面上限定的通道103的放大横截面视图。在一些实施方式中，对顶侧表面114进行倒角(chamfer)处理，该顶侧表面114限定在顶环100的外边缘112处并且连接到面向等离子体的表面118。在一些实施方式中，对底侧表面112进行圆角(round)处理，该底侧表面112限定在顶环100的外边缘112处并且连接到下侧119。在一些实施方式中，对底侧表面117进行圆角处理，该底侧表面117限定在顶环100的内边缘113处并且连接到下侧119。在一个实施方式中，对顶侧表面116进行圆角处理，该顶侧表面116限定在顶环100的内边缘113处并连接到面向等离子体的表面118。
图7示出了在外边缘102和限定在顶环100的下侧表面上的通道103之间限定的凹槽105的放大视图。凹槽105通向通道103。凹槽105包括限定会聚到一点(例如销接触位置212')的开口的成角度的侧壁213a、213b。在一些实施方式中，成角度的侧壁213a、213b限定V形凹槽。包括在处理模块中的提升销在致动时在限定销接触位置212'的点处与相应的凹槽105a-105c啮合。在替代实施方式中，侧壁213a、213b可以被限定为包括沿着圆角边缘会聚到该点的开口。在这样的实施方式中，具有圆角边缘的侧壁限定U形凹槽。
图8示出了顶环在设置凹槽105的点处的沿图7中的线8—8的径向横截面视图。径向横截面视图标识设置凹槽105的侧壁213的角度θ°。侧壁213的角度允许处理模块的提升销与相应的凹槽105啮合并滑入限定在相应的凹槽105中的销接触位置212'。径向横截面视图还标识限定在顶环100的顶侧上的面向等离子体的表面211和在顶环100的下侧表面上与凹槽105相邻地限定的通道103。
图9示出了凹槽105的沿图7中的线9—9的周向横截面视图。凹槽105包括限定会聚到点212'的开口的成角度的侧壁213a、213b。在一个实施方式中，凹槽105的侧壁213a、213b之间的角度显示为β°，其中第一侧壁213a与法线角度的角度显示为β°/2。

Claims (9)

1.一种用于半导体处理模块的顶环，所述顶环构造成沿着所述半导体处理模块的衬底支撑件的外围放置，所述顶环的特征在于，
所述顶环的顶侧具有在所述顶环的内边缘和外边缘之间延伸的面向等离子体的表面；
所述顶环的下侧具有设置在所述顶环的所述内边缘和所述外边缘之间的通道；以及
一组凹槽设置在所述下侧上在所述通道和所述外边缘之间。
2.根据权利要求1所述的顶环，其中所述一组凹槽中的每一个由成角度的侧壁限定，其中所述成角度的侧壁形成会聚到一点的开口。
3.根据权利要求2所述的顶环，其中会聚到所述点的所述成角度的侧壁限定V形凹槽。
4.根据权利要求1所述的顶环，其中所述一组凹槽中的每一个用于连接到在所述处理模块内实施的提升销，以提升和降低所述顶环。
5.根据权利要求2所述的顶环，其中所述顶环具有径向横截面，所述径向横截面标识所述凹槽中的一个，在所述凹槽处设置有由所述成角度的侧壁形成的所述点。
6.根据权利要求1所述的顶环，其中所述顶环具有周向横截面，所述周向横截面暴露所述顶侧的所述面向等离子体的表面和所述下侧的所述通道。
7.根据权利要求1所述的顶环，其中顶侧表面经倒角处理，所述顶侧表面限定在所述顶环的所述外边缘处并连接到所述面向等离子体的表面。
8.根据权利要求1所述的顶环，其中底侧表面经圆角处理，所述底侧表面限定在所述顶环的所述外边缘处并连接到所述下侧。
9.根据权利要求1所述的顶环，其中底侧表面经圆角处理，所述底侧表面限定在所述顶环的所述内边缘处并连接到所述下侧，并且
其中顶侧表面经圆角处理，所述顶侧表面限定在所述顶环的所述内边缘处并连接到面向等离子体的表面。
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