TWI613755B - 用於處理具有不同尺寸之工件之裝置與方法 - Google Patents
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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Abstract
本發明揭示用於電漿處理具有不同直徑之工件之裝置及方法。該裝置包含具有一外周邊之一提升板、該外周邊內部之一開口及延伸於該開口及該外周邊之間之一間隙。該提升板包含具有不同內徑且經組態以分別支撐第一工件及第二工件之環形輪緣。
Description
本發明大體上係關於用於工件處理之裝置及方法,且更特定言之係關於用於將具有不同尺寸之基板傳送至一電漿處理系統之一電極且自該電極傳送該等基板之裝置及方法。
諸如電漿處理工具之處理系統依靠固持機構以在執行一處理程序期間將一工件(諸如一半導體、陶瓷或金屬基板或晶圓)支撐在一處理腔室內。特定固持機構包含經組態以一致上升或下降以使工件相對於一支撐件之一頂部表面升高或下降之提升銷。在下降位置中,提升銷之尖端與支撐件頂部表面齊平或略微凹陷於該頂部表面下方,使得工件至少部分接觸頂部表面。在上升位置中,提升銷之尖端接觸工件之一底表面(背面)且使工件升高至支撐件之頂部表面之上方。通常,多個提升銷建立與工件之背面之多個接觸點。介於經提升工件與支撐件之表面之間之所得間隙允許用於插入一末端效應器之一接達空間。
對提升銷之需求需要在處理腔室中用於將來自處理腔室外部之一位置之機械運動傳送至提升銷之一或多個機械饋通。各機械饋通需要延伸穿過處理腔室之腔室壁之至少一埠。各埠提供用於真空洩漏之一主位置。此外,提升銷與工件之間之接觸可損害或污染工件之背面。此外,使提升銷升高或下降之程序可產生污染處理腔室且在不整
治之情況下最終導致經處理工件之污染之顆粒。
因此可期望提供消除對提升銷之需要之改良式處理方法及系統。
在一實施例中,提供一種用於電漿處理具有不同直徑之第一工件及第二工件之裝置。裝置包含具有一外周邊之一提升板、外周邊內部之一開口、包圍開口之一第一輪緣、包圍開口之一第二輪緣及延伸於開口與外周邊之間使得第一輪緣及第二輪緣間斷之一間隙。第一輪緣經組態以支撐第一工件。第二輪緣經組態以支撐第二工件。第二輪緣具有大於第一輪緣之一內徑之一內徑。
在又另一實施例中,提供一種用於在一處理腔室中處理具有不同直徑之一第一工件及一第二工件之方法。該方法包含:將第一工件支撐在具有一內徑之一第一輪緣處之一提升板上之一外週邊邊緣處;使提升板移動朝向一下電極之一基座部分以便將第一工件自提升板傳送至基座部分。該方法亦包含在將第一工件支撐於基座部分上時使用電漿處理第一工件。該方法包含自提升板移除第一工件。該方法進一步包含將第二工件支撐於具有大於第一輪緣之內徑之一內徑之一第二輪緣處之一提升板上之一外部周邊邊緣處。
10‧‧‧處理腔室
14‧‧‧蓋
16‧‧‧基底
24‧‧‧下電極
28‧‧‧工件
29‧‧‧外周邊邊緣
30‧‧‧工件
31‧‧‧外周邊邊緣
48‧‧‧晶圓提升機構
50‧‧‧總成
52‧‧‧提升板
54‧‧‧彈性偏置支撐件
56‧‧‧固定板
58‧‧‧構件
60‧‧‧構件
65‧‧‧外周邊邊緣/外周邊
66‧‧‧構件
68‧‧‧構件
70‧‧‧中心開口
72‧‧‧間隙
74‧‧‧提升板之頂部表面
76‧‧‧固定板之頂部表面
78‧‧‧側壁
80‧‧‧側壁
90‧‧‧末端效應器
92‧‧‧下電極之頂部表面
94‧‧‧安裝凸緣之頂部表面
100‧‧‧可移除電極區段
102‧‧‧安裝凸緣
104‧‧‧基座部分
106‧‧‧基座部分之頂部表面
108‧‧‧凸部
110‧‧‧溝槽
120‧‧‧輪緣
122‧‧‧輪緣
126‧‧‧凹槽
128‧‧‧構件
130‧‧‧構件
132‧‧‧壁
134‧‧‧壁
142‧‧‧壁
144‧‧‧輪緣
162‧‧‧壁
164‧‧‧輪緣
168‧‧‧加寬區域
併入本說明書中且組成本說明書之一部分之附圖繪示本發明之實施例且結合上文給定之本發明之一般描述以及下文給定之詳細描述一起用以解釋本發明之實施例之原理。
圖1係根據本發明之一實施例用於包含一晶圓提升機構之電漿處理系統之一真空處理腔室之一分解圖。
圖2係晶圓提升機構之提升板及固定板之一拆卸圖。
圖3係晶圓提升機構之提升板及固定板之一分解圖。
圖4係晶圓提升機構之提升板及固定板以及電漿處理系統之一電極之一基座部分之一透視組裝圖。
圖5係大體上沿圖4中之線5-5取得之一截面圖。
圖6A係類似於圖4之一透視圖,其中將具有相對較小直徑之一晶圓定位成放置於晶圓提升機構之提升板上。
圖6B係類似於圖6A之一透視圖,其中藉由晶圓提升機構之提升板支撐晶圓且該提升板處於相對於電極之基座部分之一上升條件中。
圖6C係類似於圖6B之一透視圖,其中在將提升板放置於一下降條件中之後藉由電極之基座部分支撐晶圓。
圖7A係類似於圖4之一透視圖,其中將具有相對較大直徑之一晶圓定位成放置於晶圓提升機構之提升板上。
圖7B係類似於圖7A之一透視圖,其中藉由晶圓提升機構之提升板支撐晶圓且該提升板處於相對於電極之基座部分之一上升條件中。
圖7C係類似於圖7B之一透視圖,其中在將提升板放置於一下降條件中之後藉由電極之基座部分支撐晶圓。
參考圖1,與一電漿處理系統一起使用之一處理腔室10通常包含:一真空容器或外殼,其具有一蓋14及一基底16,蓋14擱於基底16上;一下電極24;一上電極(未展示);及一晶圓提升機構48,其定位於處理腔室10內部用以將一晶圓自動傳送至下電極24且自下電極24傳送該晶圓。蓋14與一提升器件(未展示)機械耦合,該提升器件能夠使蓋14在上升位置與下降位置之間相對於基底16垂直提升或下降。當蓋14及基底16處於一接觸關係時,將一處理區域界定為垂直定界於電極之面向內水平表面之間且橫向定界於藉由分離環界定之側壁之面向內垂直表面內部之空間。當蓋14處於上升位置中時,處理區域可接達以插入未處理工件28、30(圖6A、圖7A)且移除經處理工件28、30。當蓋
14處於下降位置中時,可在處理區域中建立適合電漿處理定位於處理區域中之各連續工件28、30之一環境。當蓋14藉由提升器件在上升位置與下降位置之間相對於基底16移動時,上電極連同蓋14一起移動。
在工件28、30處理期間,藉由一電源供應器施加在電極之間之電力在處理區域中產生一電磁場,當蓋14及基底16接觸時處理區域係界定在電極之間且適合電漿處理之一環境存在於處理區域中。電磁場將存在於處理區域中之源氣體之原子或分子激發至一電漿狀態,該電漿狀態係藉由施加來自電源供應器之電力達電漿處理之持續時間而維持。
來自電漿之成分物種與工件28、30上之暴露材料接觸且相互作用,以執行所要表面改質。電漿經組態以藉由選擇參數(諸如,源氣體化學、處理區域內部之壓力及施加於電極之電力及/或頻率之量)執行工件28、30之所要表面改質。處理系統可包含自動辨識一電漿程序(例如,一蝕刻程序)何時已達到一預定端點或(替代性地)電漿程序何時可基於一處理配方之一經驗判定時間進行計時之一端點辨識系統(未展示)。
繼續參考圖1至圖5,處理腔室10包含一總成50,該總成50用作為用於將具有不同外徑之工件28、30傳送至下電極24之一基座部分104且自該基座部分104傳送該等工件28、30之一晶圓提升機構48之一組件。當將工件28、30之一者或另一者支撐於下電極24上時,總成50在處理期間周向包圍工件28、30。工件28具有頂部及底部主要表面以及連接頂部及底部主要表面之一外周邊邊緣29。工件30具有頂部及底部主要表面以及連接頂部及底部主要表面之一外周邊邊緣31。工件30之外周邊邊緣31具有大於工件28之外周邊邊緣29之一外徑。舉例而言,工件28之外周邊邊緣29可具有200毫米之一外徑,且工件30之外周邊邊緣31可具有300毫米之一外徑。
用於與總成50一起使用之一晶圓提升機構之進一步細節揭示於美國公開案第2009/0311088號中,該案之全文以引用的方式併入本文中。
總成50包含一固定板56(其在操作期間具有相對於下電極24之一固定位置)及一提升板52。提升板52組成總成50之一可移動部分,其在將工件28、30之一者或另一者放置於下電極24上或自下電極24移除工件28、30之一者或另一者時相對於固定板56及下電極24移動。明確言之,在相對於下電極24及固定板56之一上升條件中,提升板52接納工件28、30之一者或另一者。提升板52可結合敞開及閉合蓋14自動移動且無一上升位置(當敞開蓋14時)與一下降位置(當蓋14處於相對於基底16之一閉合位置時)之間之操作者介入。換言之,當上電極藉由蓋14移動朝向下電極24以密封處理區域時,提升板52自上升位置移動朝向下降位置且當上電極藉由蓋14移動遠離下電極24時,提升板52自下降位置移動朝向上升位置。
總成50之提升板52藉由一組彈性偏置支撐件54與下電極24機械耦合。一組彈性偏置推動器件(未展示)自上電極突出朝向下電極24且在蓋14閉合時接觸提升板52以引起相對於下電極24之移動。當將蓋14放置於下降位置(其中蓋14接觸基底16以密封處理區域使之免受周圍環境影響)中時,提升板52移動以將工件28、30之一者自動放置於下電極24之一基座部分104上之一處理位置中。當使蓋14下降時,提升板52及固定板56各具有與下電極24之良好電接觸。因此,當電漿處理系統正操作以在處理區域內部產生電漿時,提升板52、固定板56、支撐於下電極24上之工件28、30及下電極24處於近似相等電位。
提升板52包含結合在一起之複數個構件58、60及128。提升板52包含完全延伸穿過構件58、60之一中心開口70、一外周邊邊緣或周邊65及自中心開口70徑向延伸至提升板52之外周邊65之一間隙72。雖然
在代表性實施例中中心開口70係圓形,但中心開口70亦可具有其他形狀(例如,矩形)。構件128安裝於鄰近構件58之中心開口70之一凹槽126中。
間隙72界定在延伸穿過提升板52之厚度之對立側壁78、80之間。提升板52中之間隙72之寬度經定尺寸及組態使得可操縱一末端效應器90以通過間隙72且接達中心開口70,以將未處理工件28、30傳送至提升板52且自提升板52移除經處理工件28、30。以此方式,末端效應器90可攜載經支撐工件28、30以將工件28、30自處理腔室外部之一位置傳送至處理腔室內部之總成50,且反之亦然。如一般技術者所理解,末端效應器90與一機器人(諸如一選擇適應性多關節型/裝配機器人臂(SCARA)型機器人)操作地耦合。
類似於提升板52,固定板56包含結合在一起之複數個構件66、68、130。固定板56經定尺寸具有略微小於間隙72之寬度之一寬度。當使提升板52下降至一處理位置時,固定板56填充間隙72使得中心開口70由一實質上平面表面(其藉由提升板52之一頂部表面74及固定板56之一頂部表面76共同界定)包圍。為促進必需的共面配置,將固定板56及提升板52之各自厚度選擇為近似相等,此允許在提升板52處於其下降位置中時頂部表面74、76近似齊平。
下電極24進一步包括一可移除電極區段100,該可移除電極區段100包含位於界定於下電極24中之一凹槽中之一安裝凸緣102及一基座部分104。基座部分104(其用作為一工件支撐件)自安裝凸緣102突出朝向上電極。電極區段100使用習知扣件固定至下電極24之下伏及周圍其餘部分。電極區段100具有與下電極24之其餘部分之一良好電接觸,使得在電漿處理系統正操作且電漿存在於處理區域中時基座部分104處於實質上相同於下電極24之電位。
下電極24之一頂部表面92與安裝凸緣102之一頂部表面94近似齊
平。基座部分104之一頂部表面106(其經升高至周圍安裝凸緣102上方)之表面積近似等於提升板52之中心開口70之徑向內部之開放截面積。基座部分104之直徑略微小於提升板52之中心開口70之直徑。
固定板56突出於安裝凸緣102之平面上方。固定板56及基座部分104可包括自安裝凸緣102突出之一單一或單體凸起區域。或者,固定板56可包括安裝至電極區段100之一分離組件且在此例項中可包含定位銷(未展示)或用於相對於提升板52之中心開口70自動定位固定板56之類似物。在一實施例中,固定板56之頂部表面76係在略微低於基座部分104之頂部表面106之一平面之一平面中。
當使提升板52在蓋14閉合時下降朝向一處理位置時,由提升板52固持之工件28、30之一者與基座部分104之頂部表面106之間之接觸將由提升板52固持之工件28、30之一者自提升板52傳送至基座部分104。在無需基座部分104、下電極24或外殼12之基底16上之任何結構將各自工件28、30導引至基座部分104上之情況下完成工件傳送。在電漿處理期間,藉由定位於基座部分104之頂部表面106上之凸部108支撐工件28、30之一者。基座部分104之頂部表面106可為一固體板,或其可具有溝槽110或其另一非平面頂部表面106(圖2)。此等溝槽110或非平面表面有助於防止一氣穴形成於工件下方及/或工件相對於基座部分104之頂部表面106滑動。
提升板52包含一輪緣120及一壁132,其等經定大小及塑形以在尺寸上對應於工件28之外周邊邊緣29。輪緣120經彎曲以界定一圓環之一區段且具有略微小於工件28之外周邊邊緣29之外徑之一內徑。壁132係凹形且標稱上經彎曲具有相同於輪緣120之曲率,以界定一圓環之一區段。壁132具有略微大於工件28之外周邊邊緣29之一外徑之一內徑。在一實施例中,若工件28具有200mm之一標稱外徑,則輪緣120之內徑可略微小於200毫米且壁132之內徑可大於200毫米。壁132
突出於輪緣120上方使得工件28之外周邊邊緣29能夠支撐於輪緣120上且處在壁132之徑向內部。壁132可具有近似等於工件28之厚度之一高度。
在代表性實施例中,輪緣120及壁132安置於與構件58分離之構件128上。在一替代實施例中,構件58及構件128可具有一整體構造而非包括分離結構。
提升板52亦包含一輪緣122及一壁134,其等經定大小及塑形以在尺寸上對應於工件30之外周邊邊緣31。輪緣122經彎曲以界定一圓環之一區段且具有略微小於工件30之外周邊邊緣31之一外徑之一內徑。壁134係凹形且標稱上經彎曲具有相同於輪緣122之曲率,以界定一圓環之一區段。壁134具有略微大於工件30之外周邊邊緣31之一外徑且略微大於輪緣122之內徑之一內徑。在一實施例中,若工件30具有300mm之一標稱外徑,則輪緣122之內徑可略微小於300毫米且壁134之內徑可大於300毫米。壁134突出於輪緣122上方使得工件30之外周邊邊緣31能夠支撐於輪緣122上且處在壁134之徑向內部。壁134可具有相對於輪緣122近似等於工件30之厚度之一高度。當將工件30支撐於輪緣122上時,輪緣122可具有經組態以提供工件30之額外支撐之一或多個加寬區域168。
輪緣120、122圍繞中心開口70周向延伸,其中輪緣120與中心開口70共延伸。輪緣120、122較佳與具有較大半徑之輪緣122同心。類似地,壁132、134之各自面向內凹表面圍繞中心開口70周向延伸且較佳與具有較大半徑之輪緣122同心。在代表性實施例中,輪緣122及壁134與輪緣120及壁132相連(coterminous)。間隙72之存在導致輪緣120、122及壁132、134在側壁78、80之間具有一圓周間斷(其在角度範圍中等於間隙72之弧長且界定各自圓環之區段)。在一實施例中,輪緣120、122及壁132、134各具有大於180°,較佳大於270°之一弧
長。壁132、134可呈錐狀以在將工件28、30之一者或另一者自一末端效應器傳送至提升板52時充當一導引件。
固定板56包含一壁142及一輪緣144,其等經定大小及塑形以在尺寸上對應於工件28之一外周邊邊緣29。輪緣144經彎曲以界定一圓環之一區段且具有略微小於工件28之外周邊邊緣29之一外徑之一內徑。壁142係凹形且標稱上經彎曲具有相同於輪緣144之曲率,以界定一圓環之一區段。壁142具有略微大於工件28之外周邊邊緣29之一外徑之一內徑。壁142突出於輪緣144上方,使得當提升板52處在下降位置中時,工件28之外周邊邊緣29上覆於輪緣144且安置於壁142之徑向內部。壁142可具有近似等於工件28之厚度之一高度。
壁142及輪緣144經定尺寸及彎曲以在提升板52處於其下降位置中時佔據提升板52之輪緣120與壁132之間之間隙72。為此目的,壁132、142之弧長之總和等於2π弧度(360°)以提供一閉合圓環且輪緣120、144之弧長之總和等於2π弧度(360°)以提供一閉合圓環。壁142及輪緣144具有短於提升板52之壁132及輪緣120之弧長。在一實施例中,壁142及輪緣144各具有小於180°,較佳小於90°之一弧長。
固定板56包含一壁162及一輪緣164,其等經定大小及塑形以在尺寸上對應於工件30之一外周邊邊緣31。輪緣164經彎曲以界定一圓環之一區段且具有略微小於工件30之外周邊邊緣31之一外徑之一內徑。壁162係凹形且經彎曲具有相同於輪緣164之一般曲率。壁162具有略微大於工件30之外周邊邊緣31之一外徑之一內徑。壁162突出於輪緣164之上方使得當提升板52處於下降位置中時,工件30之外周邊邊緣31上覆於輪緣164且安置於壁162之徑向內部。壁162可具有近似等於工件30之厚度之一高度。
壁162及輪緣164經定尺寸及彎曲以在提升板52處於其下降位置中時佔據提升板52之輪緣122與壁134之間之間隙72。為此目的,壁
134、162之弧長之總和等於2π弧度(360°)以提供一閉合圓環且輪緣122、164之弧長之總和等於2π弧度(360°)以提供一閉合圓環。壁162及輪緣164具有短於提升板52之壁134及輪緣122之弧長。在一實施例中,壁162及輪緣164各具有小於180°,較佳小於90°之一弧長。當提升板52處於下降處理位置(圖6C)中且在標稱上相同於固定板56之平面中時,壁134、162具有一端對端配置且輪緣122、164具有一端對端配置。
當提升板52處於下降處理位置(圖6C)中且在標稱上相同於固定板56之平面中時,壁132、162之端對端配置及輪緣120、164之端對端配置界定一閉合圓環或材料環。提升板52之輪緣120可具有藉由其內徑及外徑之差給定之一徑向尺寸,該徑向尺寸經選擇使得輪緣120僅接觸工件28之底部表面上之一狹窄圓環區域。在一實施例中,接觸區域可為自工件28之周邊邊緣29徑向向內延伸近似等於3毫米之一圓環。
在下降處理位置中,提升板52之輪緣120可凹陷於基座部分104之頂部表面106下方,使得工件28未支撐於輪緣120上。代替性地,工件28可藉由複數個凸部108支撐且藉此經升高略微高於電極24之基座部分104之頂部表面106。因而,當提升板52處於其下降位置中時,輪緣120具有與工件28之一非接觸關係。
因為提升板52包含輪緣120、122以容納具有兩種不同大小之工件28、30,所以可使用提升板52以處理工件28或工件30。換言之,一旦完成工件28之處理,便可使用相同處理腔室10處理工件30且反之亦然,而無需換掉或替換提升板52或固定板56之任一部分。
使用且參考圖6A至圖7C,描述處理工件28、30之一方法。在使處理腔室10之蓋14相對於基底16上升之情況下,可使用末端效應器90以將工件28自處理腔室10外部之一位置傳送至電漿處理腔室內部之一位置。更明確言之,可將工件28支撐於處理腔室外部之一位置處之末
端效應器90上,且接著可操縱末端效應器90以攜載及傳送所支撐工件28至總成50,明確言之至提升板52上之輪緣120。如圖6A中所示,工件28藉由末端效應器90放置於輪緣120上,使得工件28之一外周邊邊緣支撐於輪緣120上。接著,透過間隙72自處理腔室抽出末端效應器90。
如圖6B中所示,一旦工件28被定位於提升板52上,提升板52便在處理腔室10之蓋14相對於基底16下降時向下移動朝向下電極24之基座部分104。使蓋14下降使上電極移動朝向下電極24。如圖6C中所示,當提升板52大幅下降時,工件28自輪緣120傳送至基座部分104之凸部108。
一旦將工件28定位於基座部分104上,便使用真空泵抽空處理腔室且自氣體入口板引入程序氣體以建立一合適次大氣壓。藉由電源供應器供能給上電極及下電極24以在處理腔室中由程序氣體產生一電漿。以此方式,針對一定時暴露或一端點暴露使用電漿處理工件28。當完成工件28之電漿處理時,對處理腔室進行排氣且使外殼12之蓋14相對於基底16上升。當提升板52在蓋14上升時移動至上升位置時,工件28藉由輪緣120接觸且自基座部分104提升。在蓋14敞開之情況下,再次藉由提升板52將工件28支撐在一上升條件中(圖6B)。
末端效應器90可再一次經操縱以自提升板52移除工件28。下電極24與提升板52之中心開口70之間的分離提供針對末端效應器90之一開放空間以:獲得至經處理工件28之背面之接達;自中心開口70提升經處理工件28;及自電漿處理系統之處理腔室10抽出經處理工件28。在此運動序列中,末端效應器90實體裝配於間隙72內。
末端效應器90可用於將多個工件28串列地傳送至提升板52之輪緣120上之一位置。末端效應器90亦可用於將一或多個工件30傳送至提升板52之輪緣122上之一位置。可在不更換提升板52之任何部分或
固定板56之任何部分之情況下完成處理具有較大直徑之工件30之切換。且參考圖7A至圖7C,上文描述之相同方法接著可用於處理一或多個工件30。
本文藉由實例且非限制地參考諸如「垂直」、「水平」等等之術語,以建立一三維參考系。如本文所使用之術語「水平」係定義為無關於定向實質上平行於包含電極24之基座部分104之頂部表面106之一平面之一平面。術語「垂直」指代垂直於水平(剛定義)之一方向。相對於水平平面定義諸如「上」、「下」、「在...上」、「在...上方」、「在...下方」、「側」(如在「側壁」中)、「更高」、「更低」、「在...之上」、「在...之下」及「下方」之術語。應理解,可在不脫離本發明之精神及範疇之情況下採用各種其他參考系,此係因為一般技術者將瞭解相對於絕對,所定義之參考系係相對的。
雖然已藉由各種實施例之一描述繪示本發明且雖然已相當詳細地描述該等實施例,但本申請案不旨在將隨附申請專利範圍之範疇約束或以任何方式限制於此細節。熟習此項技術者將容易明白額外優點及修改。因此,本發明在其更廣泛態樣上不限於特定細節、代表性裝置及方法以及所展示及描述之闡述性實例。因此,在不脫離申請者之一般發明概念之精神或範疇之情況下可自此等細節偏離。本發明之範疇本身應僅由隨附申請專利範圍定義。
10‧‧‧處理腔室
14‧‧‧蓋
16‧‧‧基底
24‧‧‧下電極
48‧‧‧晶圓提升機構
50‧‧‧總成
52‧‧‧提升板
54‧‧‧彈性偏置支撐件
56‧‧‧固定板
58‧‧‧構件
60‧‧‧構件
65‧‧‧外周邊邊緣/外周邊
66‧‧‧構件
68‧‧‧構件
70‧‧‧中心開口
72‧‧‧間隙
74‧‧‧提升板之頂部表面
76‧‧‧固定板之頂部表面
78‧‧‧側壁
80‧‧‧側壁
92‧‧‧下電極之頂部表面
94‧‧‧安裝凸緣之頂部表面
100‧‧‧可移除電極區段
102‧‧‧安裝凸緣
104‧‧‧基座部分
106‧‧‧基座部分之頂部表面
108‧‧‧凸部
110‧‧‧溝槽
120‧‧‧輪緣
122‧‧‧輪緣
128‧‧‧構件
130‧‧‧構件
132‧‧‧壁
134‧‧‧壁
Claims (12)
- 一種用於電漿處理具有不同直徑之一第一工件及一第二工件之裝置,該裝置包括:一電極,其包含一基座部分,該基座部分經組態以支持該第一工件或該第二工件;及一提升板,其具有一外周邊、該外周邊內部之一開口、包圍該開口且經組態以支撐該第一工件之一第一輪緣及包圍該開口且經組態以支撐該第二工件之一第二輪緣,該第一輪緣具有一內徑,該第二輪緣具有大於該第一輪緣之該內徑之一內徑,及該電極之該基座部分裝配在該提升板中之該開口內,該提升板經調適以相對於該基座部分在以下之間移動:A)一上升位置,其中該第一工件或該第二工件分別與該第一輪緣或該第二輪緣接觸並由該第一輪緣或該第二輪緣支撐,及B)一下降位置,其中該基座部分在該提升板中之該開口內且該第一工件自該第一輪緣傳送至或該第二工件自該第二輪緣傳送至該電極之該基座部分,使得該第一工件或該第二工件分別不與該第一輪緣或該第二輪緣接觸。
- 如請求項1之裝置,其中該第一輪緣之該內徑等於該第一工件之一外徑,使得該第一輪緣經組態以在該外徑附近支撐該第一工件,且該第二輪緣之該內徑等於該第二工件之一外徑,使得該第二輪緣經組態以在該外徑附近支撐該第二工件。
- 如請求項1之裝置,其進一步包括:一第一凹壁,其定位於該第一輪緣之徑向外部且突出於該第一輪緣上方;及一第二凹壁,其定位於該第二輪緣之徑向外部且突出於該第 二輪緣上方。
- 如請求項3之裝置,其中該第一凹壁具有等於該第一工件之一厚度之一高度,且該第二凹壁具有等於該第二工件之一厚度之一高度。
- 如請求項1之裝置,其中該第一輪緣及該第二輪緣具有一同心配置,且該第一凹壁及該第二凹壁具有一同心配置。
- 如請求項1之裝置,其進一步包括:一固定板,其經定大小及定位以裝配於該間隙內,該固定板包含具有一內徑之一第三輪緣及具有一內徑之一第四輪緣,該第四輪緣之該內徑大於該第三輪緣之該內徑。
- 如請求項6之裝置,其中該第三輪緣之該內徑等於該第一輪緣之該內徑,使得該第一輪緣及該第三輪緣之各自弧長共計2π弧度,且該第四輪緣之該內徑等於該第二輪緣之該內徑,使得該第二輪緣及該第四輪緣之各自弧長共計2π弧度。
- 如請求項1之裝置,其中該第一輪緣及該第二輪緣具有一同心配置。
- 如請求項1之裝置,其進一步包括:一處理腔室;及一電極,其在該處理腔室內部,該電極包含經組態以支撐該第一工件或該第二工件之一基座部分,其中該提升板可相對於該基座部分移動。
- 如請求項9之裝置,其中該基座部分經組態及經定尺寸以裝配在該提升板中之該開口內。
- 一種在一處理腔室中處理具有不同直徑之一第一工件及一第二工件之方法,該方法包括:將該第一工件之一第一外周邊邊緣支撐於一提升板之一第一 輪緣上;使該提升板移動朝向一下電極之一基座部分以將該第一工件自該提升板傳送至該基座部分;在將該第一工件支撐於該基座部分上時,使用電漿處理該第一工件;自該提升板移除該第一工件;及將該第二工件之一第二外周邊邊緣支撐於該提升板之一第二輪緣上,其中該第二輪緣具有大於該第一輪緣之第一內徑之一第二內徑。
- 如請求項11之方法,其中在不更換該提升板之任何部分之情況下將該第二工件支撐於該提升板之該第二輪緣上。
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