JP2015532001A - 異なるサイズのワークを取り扱う装置及び方法 - Google Patents
異なるサイズのワークを取り扱う装置及び方法 Download PDFInfo
- Publication number
- JP2015532001A JP2015532001A JP2015526592A JP2015526592A JP2015532001A JP 2015532001 A JP2015532001 A JP 2015532001A JP 2015526592 A JP2015526592 A JP 2015526592A JP 2015526592 A JP2015526592 A JP 2015526592A JP 2015532001 A JP2015532001 A JP 2015532001A
- Authority
- JP
- Japan
- Prior art keywords
- edge
- workpiece
- lift plate
- inner diameter
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (12)
- 異なる直径を有する第1のワーク及び第2のワークのプラズマ処理に用いる装置であって、前記装置は、
外周縁部と、前記外周縁部の内側にある開口部と、前記開口部を包囲し、前記第1のワークを支持する第1の縁部と、前記開口部を包囲し、前記第2のワークを支持する第2の縁部と、前記第1の縁部及び前記第2の縁部が不連続であるように、前記開口部と前記外周縁部との間に延在する間隙とを有するリフト板を備え、
前記第1の縁部は内径を有し、前記第2の縁部は内径を有し、且つ前記第2の縁部の前記内径は前記第1の縁部の前記内径より大きい、装置。 - 前記第1の縁部の前記内径は、前記第1の縁部が前記第1のワークの外径付近において前記第1のワークを支持するように、前記第1のワークの前記外径に略等しく、前記第2の縁部の前記内径は、前記第2の縁部が前記第2のワークの外径付近において前記第2のワークを支持するように、前記第2のワークの前記外径に略等しい、請求項1に記載の装置。
- 前記第1の縁部の径方向外側に位置決めされ、前記第1の縁部の上方に突出する第1の凹形壁部と、
前記第2の縁部の径方向外側に位置決めされ、前記第2の縁部の上方に突出する第2の凹形壁部と、
を更に備える、請求項1に記載の装置。 - 前記第1の凹形壁部は、前記第1のワークの厚みに略等しい高さを有し、前記第2の凹形壁部は前記第2のワークの厚みに略等しい高さを有する、請求項3に記載の装置。
- 前記第1の縁部及び前記第2の縁部は同心配置を有し、前記第1の凹形壁部及び前記第2の凹形壁部は同心配置を有する、請求項1に記載の装置。
- 前記間隙に収まるように寸法決めされ且つ位置決めされる固定板を更に備え、
前記固定板は、内径を有する第3の縁部と、内径を有する第4の縁部とを含み、前記第4の縁部の前記内径は前記第3の縁部の前記内径より大きい、請求項1に記載の装置。 - 前記第1の縁部及び前記第4の縁部のそれぞれの弧長が合わせて2πラジアンになるように、前記第3の縁部の前記内径は前記第1の縁部の前記内径に等しく、前記第2の縁部及び前記第4の縁部のそれぞれの弧長が合わせて2πラジアンになるように、前記第4の縁部の前記内径は前記第2の縁部の前記内径に等しい、請求項6に記載の装置。
- 前記第1の縁部及び前記第2の縁部は同心配置を有する、請求項1に記載の装置。
- プロセスチャンバと、
前記プロセスチャンバ内にある電極であって、前記第1のワーク又は前記第2のワークを支持する台座部分を含む、電極と、
を更に備え、
前記リフト板は前記台座部分に対して移動可能である、請求項1に記載の装置。 - 前記台座部分は、前記リフト板内の前記開口部内に収まるように構成され且つ寸法決めされる、請求項9に記載の装置。
- プロセスチャンバにおいて異なる直径の第1のワーク及び第2のワークを処理する方法であって、前記方法は、
前記第1のワークの第1の外周縁部を、リフト板の第1の縁部上で支持することと、
前記第1のワークを前記リフト板から下側電極の台座部分まで移送するように、前記台座部分に向かって前記リフト板を移動させることと、
前記第1のワークが前記台座部分上に支持されている間に、前記第1のワークをプラズマで処理することと、
前記第1のワークを前記リフト板から取り外すことと、
前記第2のワークの第2の外周縁部を、前記リフト板の第2の縁部上で支持することと、
を含み、
前記第2の縁部は、前記第1の縁部の前記第1の内径より大きい第2の内径を有する、方法。 - 前記第2のワークは、前記リフト板のいかなる部分も取り替えることなく、前記リフト板の前記第2の縁部上で支持される、請求項11に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/567,507 | 2012-08-06 | ||
US13/567,507 US9385017B2 (en) | 2012-08-06 | 2012-08-06 | Apparatus and methods for handling workpieces of different sizes |
PCT/US2013/053398 WO2014025637A1 (en) | 2012-08-06 | 2013-08-02 | Apparatus and methods for handling workpieces of different sizes |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015532001A true JP2015532001A (ja) | 2015-11-05 |
JP6321646B2 JP6321646B2 (ja) | 2018-05-09 |
Family
ID=49034173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015526592A Expired - Fee Related JP6321646B2 (ja) | 2012-08-06 | 2013-08-02 | 異なるサイズのワークを取り扱う装置及び方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9385017B2 (ja) |
JP (1) | JP6321646B2 (ja) |
KR (1) | KR102168255B1 (ja) |
CN (1) | CN104603925B (ja) |
SG (1) | SG11201500378XA (ja) |
TW (1) | TWI613755B (ja) |
WO (1) | WO2014025637A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017069238A1 (ja) * | 2015-10-21 | 2017-04-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
US10438833B2 (en) * | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
EP3422396B1 (de) * | 2017-06-28 | 2021-08-04 | Meyer Burger (Germany) GmbH | Vorrichtung zum transport eines substrats, behandlungsvorrichtung mit einer an einen substratträger einer solchen vorrichtung angepassten aufnahmeplatte und verfahren zum prozessieren eines substrates unter nutzung einer solchen vorrichtung zum transport eines substrats sowie behandlungsanlage |
US10504762B2 (en) * | 2018-02-06 | 2019-12-10 | Applied Materials, Inc. | Bridging front opening unified pod (FOUP) |
US20190259635A1 (en) * | 2018-02-17 | 2019-08-22 | Applied Materials, Inc. | Process kit for processing reduced sized substrates |
US20220336283A1 (en) * | 2021-04-16 | 2022-10-20 | UTAC Headquarters Pte. Ltd. | Wafer adaptors, including systems and methods, for adapting different sized wafers |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697270A (ja) * | 1992-09-11 | 1994-04-08 | Sony Corp | ウエハ搭載用テーブル |
JPH09120987A (ja) * | 1995-07-10 | 1997-05-06 | Watkins Johnson Co | 静電チャックアセンブリ |
JPH10233432A (ja) * | 1997-02-20 | 1998-09-02 | Hitachi Ltd | 処理装置 |
JP2001077184A (ja) * | 1999-08-31 | 2001-03-23 | Ulvac Japan Ltd | 静電吸着装置及びこれを備えた真空処理装置 |
JP2003077975A (ja) * | 2001-08-31 | 2003-03-14 | Anelva Corp | マルチチャンバースパッタ処理装置 |
JP2005197571A (ja) * | 2004-01-09 | 2005-07-21 | Disco Abrasive Syst Ltd | エッチング装置 |
JP2005223106A (ja) * | 2004-02-05 | 2005-08-18 | Okamoto Machine Tool Works Ltd | 位置決め仮置台 |
JP2009253115A (ja) * | 2008-04-08 | 2009-10-29 | Sumco Corp | ウェーハステージ |
JP2010502016A (ja) * | 2006-08-22 | 2010-01-21 | ノードソン コーポレーション | 処理システムでワークピースを扱うための装置及び方法 |
JP2010529656A (ja) * | 2007-06-01 | 2010-08-26 | ノードソン コーポレーション | プラズマプロセスの処理均一性を改善する装置及び方法 |
JP2011151387A (ja) * | 2009-12-25 | 2011-08-04 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0733973A (ja) | 1993-07-16 | 1995-02-03 | Mitsubishi Chem Corp | 熱可塑性樹脂組成物 |
JP2601180Y2 (ja) * | 1993-12-06 | 1999-11-08 | 日新電機株式会社 | 基板保持装置 |
TW254030B (en) | 1994-03-18 | 1995-08-11 | Anelva Corp | Mechanic escape mechanism for substrate |
US5823416A (en) | 1995-07-28 | 1998-10-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for surface treatment, and apparatus and method for wire bonding using the surface treatment apparatus |
US6203582B1 (en) | 1996-07-15 | 2001-03-20 | Semitool, Inc. | Modular semiconductor workpiece processing tool |
JP3201302B2 (ja) | 1997-02-10 | 2001-08-20 | 松下電器産業株式会社 | 基板のプラズマクリーニング装置 |
KR100596822B1 (ko) | 1999-03-30 | 2006-07-03 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치, 그 보수 방법 및 그 시공 방법 |
US6164633A (en) * | 1999-05-18 | 2000-12-26 | International Business Machines Corporation | Multiple size wafer vacuum chuck |
JP2002009133A (ja) | 2000-06-26 | 2002-01-11 | Canon Inc | 基板搬送装置 |
US7102763B2 (en) | 2000-07-08 | 2006-09-05 | Semitool, Inc. | Methods and apparatus for processing microelectronic workpieces using metrology |
US6902622B2 (en) * | 2001-04-12 | 2005-06-07 | Mattson Technology, Inc. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
JP3948325B2 (ja) | 2002-04-02 | 2007-07-25 | 松下電器産業株式会社 | フィルム基板処理方法 |
US7013834B2 (en) * | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
US6846380B2 (en) | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
US7845309B2 (en) | 2004-07-13 | 2010-12-07 | Nordson Corporation | Ultra high speed uniform plasma processing system |
US20060090703A1 (en) | 2004-11-01 | 2006-05-04 | Tokyo Electron Limited | Substrate processing method, system and program |
KR20100019039A (ko) * | 2008-08-08 | 2010-02-18 | 에이피시스템 주식회사 | 다양한 크기의 기판을 합착하는데 적합한 기판합착장치 |
-
2012
- 2012-08-06 US US13/567,507 patent/US9385017B2/en active Active
-
2013
- 2013-08-02 WO PCT/US2013/053398 patent/WO2014025637A1/en active Application Filing
- 2013-08-02 JP JP2015526592A patent/JP6321646B2/ja not_active Expired - Fee Related
- 2013-08-02 CN CN201380041863.7A patent/CN104603925B/zh active Active
- 2013-08-02 SG SG11201500378XA patent/SG11201500378XA/en unknown
- 2013-08-02 KR KR1020157002518A patent/KR102168255B1/ko active IP Right Grant
- 2013-08-06 TW TW102128150A patent/TWI613755B/zh active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697270A (ja) * | 1992-09-11 | 1994-04-08 | Sony Corp | ウエハ搭載用テーブル |
JPH09120987A (ja) * | 1995-07-10 | 1997-05-06 | Watkins Johnson Co | 静電チャックアセンブリ |
JPH10233432A (ja) * | 1997-02-20 | 1998-09-02 | Hitachi Ltd | 処理装置 |
JP2001077184A (ja) * | 1999-08-31 | 2001-03-23 | Ulvac Japan Ltd | 静電吸着装置及びこれを備えた真空処理装置 |
JP2003077975A (ja) * | 2001-08-31 | 2003-03-14 | Anelva Corp | マルチチャンバースパッタ処理装置 |
JP2005197571A (ja) * | 2004-01-09 | 2005-07-21 | Disco Abrasive Syst Ltd | エッチング装置 |
JP2005223106A (ja) * | 2004-02-05 | 2005-08-18 | Okamoto Machine Tool Works Ltd | 位置決め仮置台 |
JP2010502016A (ja) * | 2006-08-22 | 2010-01-21 | ノードソン コーポレーション | 処理システムでワークピースを扱うための装置及び方法 |
JP2010529656A (ja) * | 2007-06-01 | 2010-08-26 | ノードソン コーポレーション | プラズマプロセスの処理均一性を改善する装置及び方法 |
JP2009253115A (ja) * | 2008-04-08 | 2009-10-29 | Sumco Corp | ウェーハステージ |
JP2011151387A (ja) * | 2009-12-25 | 2011-08-04 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
KR102168255B1 (ko) | 2020-10-22 |
TW201411772A (zh) | 2014-03-16 |
CN104603925A (zh) | 2015-05-06 |
JP6321646B2 (ja) | 2018-05-09 |
KR20150040888A (ko) | 2015-04-15 |
WO2014025637A1 (en) | 2014-02-13 |
CN104603925B (zh) | 2017-04-26 |
SG11201500378XA (en) | 2015-03-30 |
US20140034610A1 (en) | 2014-02-06 |
US9385017B2 (en) | 2016-07-05 |
TWI613755B (zh) | 2018-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6321646B2 (ja) | 異なるサイズのワークを取り扱う装置及び方法 | |
US10468282B2 (en) | Method and apparatus for substrate transfer and radical confinement | |
TWI834491B (zh) | 電漿處理裝置及電漿處理裝置之環零件 | |
KR102569094B1 (ko) | 플라즈마 프로세싱 시스템들에서 사용하기 위한 캐리어 플레이트 | |
US20150364347A1 (en) | Direct lift process apparatus | |
JP5399245B2 (ja) | 処理システムでワークピースを扱うための装置及び方法 | |
CN108369922A (zh) | 晶片边缘环升降解决方案 | |
JP6888007B2 (ja) | ウェハエッジリングの持ち上げに関する解決 | |
TWM589358U (zh) | 半導體製程模組的頂環 | |
KR20160072273A (ko) | 프로세싱 챔버 | |
JP2018078197A (ja) | プラズマ処理装置およびプラズマ処理方法 | |
TW202420396A (zh) | 電漿處理腔、半導體處理系統及機械手 | |
KR20070082954A (ko) | 반도체 웨이퍼 식각 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160706 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170714 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170720 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20171020 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180118 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180308 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180405 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6321646 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |