KR102403094B1 - 현상 처리 방법, 컴퓨터 기억 매체 및 현상 처리 장치 - Google Patents

현상 처리 방법, 컴퓨터 기억 매체 및 현상 처리 장치 Download PDF

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KR102403094B1
KR102403094B1 KR1020150167777A KR20150167777A KR102403094B1 KR 102403094 B1 KR102403094 B1 KR 102403094B1 KR 1020150167777 A KR1020150167777 A KR 1020150167777A KR 20150167777 A KR20150167777 A KR 20150167777A KR 102403094 B1 KR102403094 B1 KR 102403094B1
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South Korea
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developer
substrate
supply nozzle
wafer
developer supply
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KR1020150167777A
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English (en)
Korean (ko)
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KR20160065757A (ko
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코시 무타
히데하루 쿄다
미노루 구보타
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도쿄엘렉트론가부시키가이샤
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Publication of KR20160065757A publication Critical patent/KR20160065757A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0025—Devices or apparatus characterised by means for coating the developer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
KR1020150167777A 2014-12-01 2015-11-27 현상 처리 방법, 컴퓨터 기억 매체 및 현상 처리 장치 KR102403094B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2014-243139 2014-12-01
JP2014243139 2014-12-01
JP2015212830A JP6449752B2 (ja) 2014-12-01 2015-10-29 現像処理方法、コンピュータ記憶媒体及び現像処理装置
JPJP-P-2015-212830 2015-10-29

Publications (2)

Publication Number Publication Date
KR20160065757A KR20160065757A (ko) 2016-06-09
KR102403094B1 true KR102403094B1 (ko) 2022-05-27

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KR1020150167777A KR102403094B1 (ko) 2014-12-01 2015-11-27 현상 처리 방법, 컴퓨터 기억 매체 및 현상 처리 장치

Country Status (4)

Country Link
JP (1) JP6449752B2 (zh)
KR (1) KR102403094B1 (zh)
CN (1) CN105652610A (zh)
TW (1) TWI657318B (zh)

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* Cited by examiner, † Cited by third party
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JP6877932B2 (ja) * 2015-09-28 2021-05-26 東京応化工業株式会社 レジストパターン形成方法及びシュリンク剤組成物
JP2018537703A (ja) * 2015-11-19 2018-12-20 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6705723B2 (ja) * 2016-09-07 2020-06-03 株式会社日本触媒 光選択吸収樹脂膜の形成方法
JP6880664B2 (ja) * 2016-11-14 2021-06-02 東京エレクトロン株式会社 塗布膜形成装置、塗布膜形成方法及び記憶媒体
JP7025872B2 (ja) * 2016-12-02 2022-02-25 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
KR102414893B1 (ko) * 2016-12-02 2022-06-30 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 기판 처리 방법 및 기억 매체
JP6994346B2 (ja) * 2017-10-11 2022-01-14 東京エレクトロン株式会社 現像処理装置、現像処理方法及び記憶媒体
WO2020222311A1 (ja) * 2019-04-30 2020-11-05 デクセリアルズ株式会社 摺動対象物の表面に対する摺動処理物の供給又は排除方法
WO2020222310A1 (ja) * 2019-04-30 2020-11-05 デクセリアルズ株式会社 摺動装置
JP2022024733A (ja) 2020-07-28 2022-02-09 東京エレクトロン株式会社 基板処理方法、記憶媒体及び基板処理装置

Citations (2)

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JP2000195773A (ja) * 1998-12-25 2000-07-14 Tokyo Electron Ltd 現像処理方法および現像処理装置
US20110096304A1 (en) * 2009-10-23 2011-04-28 Tokyo Electron Limited Developing apparatus, developing method and storage medium

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JPS5836679A (ja) * 1981-08-26 1983-03-03 Hitachi Ltd ウエツト処理方法
JPS614769A (ja) 1984-06-18 1986-01-10 Dainichi Seika Kogyo Kk アゾ顔料
JPH06112117A (ja) * 1992-09-30 1994-04-22 Hitachi Ltd 基板現像方法および装置
JP3227595B2 (ja) * 1996-08-20 2001-11-12 東京エレクトロン株式会社 現像処理方法及び現像処理装置
JPH10339956A (ja) * 1997-06-06 1998-12-22 Nec Kyushu Ltd ウエハのレジスト現像方法
JP3680902B2 (ja) * 1998-01-12 2005-08-10 大日本スクリーン製造株式会社 現像方法及びその装置
JPH11329960A (ja) * 1998-02-23 1999-11-30 Toshiba Corp 基板処理方法及び基板処理装置
US6265323B1 (en) * 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
KR20010058399A (ko) * 1999-12-27 2001-07-05 박종섭 현상액 분사장치
JP2005046694A (ja) * 2003-07-31 2005-02-24 Toshiba Corp 塗布膜形成方法及び塗布装置
JP4414753B2 (ja) * 2003-12-26 2010-02-10 東京エレクトロン株式会社 現像装置及び現像処理方法
JP2009047740A (ja) * 2007-08-13 2009-03-05 Sokudo:Kk 現像装置
JP5091722B2 (ja) * 2008-03-04 2012-12-05 東京エレクトロン株式会社 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置
JP2008182257A (ja) * 2008-03-05 2008-08-07 Dainippon Screen Mfg Co Ltd 現像装置および現像方法
KR101447759B1 (ko) * 2008-12-16 2014-10-06 도쿄엘렉트론가부시키가이샤 도포 처리 방법 및 도포 처리 장치
JP4700117B2 (ja) * 2009-02-25 2011-06-15 東京エレクトロン株式会社 現像処理方法
CN102376543B (zh) * 2010-08-09 2014-06-11 中芯国际集成电路制造(上海)有限公司 半导体元器件制造过程中的显影方法
CN201828770U (zh) * 2010-10-13 2011-05-11 京东方科技集团股份有限公司 显影装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195773A (ja) * 1998-12-25 2000-07-14 Tokyo Electron Ltd 現像処理方法および現像処理装置
US20110096304A1 (en) * 2009-10-23 2011-04-28 Tokyo Electron Limited Developing apparatus, developing method and storage medium

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CN105652610A (zh) 2016-06-08
JP6449752B2 (ja) 2019-01-09
JP2016111345A (ja) 2016-06-20
KR20160065757A (ko) 2016-06-09
TWI657318B (zh) 2019-04-21
TW201629640A (zh) 2016-08-16

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