KR102368432B1 - 복합 ｐｅａｌｄ 및 ｐｅｃｖｄ 방법을 사용하여 가변 애스팩트 비 피처들의 갭충진 - Google Patents

복합 ｐｅａｌｄ 및 ｐｅｃｖｄ 방법을 사용하여 가변 애스팩트 비 피처들의 갭충진 Download PDF

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KR102368432B1
KR102368432B1 KR1020140131380A KR20140131380A KR102368432B1 KR 102368432 B1 KR102368432 B1 KR 102368432B1 KR 1020140131380 A KR1020140131380 A KR 1020140131380A KR 20140131380 A KR20140131380 A KR 20140131380A KR 102368432 B1 KR102368432 B1 KR 102368432B1
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reactant
gap
reaction chamber
film
plasma
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KR1020140131380A
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English (en)
Korean (ko)
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KR20150037662A (ko
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강후
샹카르 스와미나탄
준 퀴안
김완기
데니스 하우스만
슈라벤디크 바트 제이. 반
애드리언 라보이
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램 리써치 코포레이션
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Priority claimed from US14/137,860 external-priority patent/US9257274B2/en
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Publication of KR20150037662A publication Critical patent/KR20150037662A/ko
Priority to KR1020220023506A priority Critical patent/KR102492259B1/ko
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Formation Of Insulating Films (AREA)
KR1020140131380A 2013-09-30 2014-09-30 복합 ｐｅａｌｄ 및 ｐｅｃｖｄ 방법을 사용하여 가변 애스팩트 비 피처들의 갭충진 KR102368432B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020220023506A KR102492259B1 (ko) 2013-09-30 2022-02-23 복합 ｐｅａｌｄ 및 ｐｅｃｖｄ 방법을 사용하여 가변 애스팩트 비 피처들의 갭충진

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361884923P 2013-09-30 2013-09-30
US61/884,923 2013-09-30
US14/137,860 US9257274B2 (en) 2010-04-15 2013-12-20 Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US14/137,860 2013-12-20

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KR1020220023506A Division KR102492259B1 (ko) 2013-09-30 2022-02-23 복합 ｐｅａｌｄ 및 ｐｅｃｖｄ 방법을 사용하여 가변 애스팩트 비 피처들의 갭충진

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KR20150037662A KR20150037662A (ko) 2015-04-08
KR102368432B1 true KR102368432B1 (ko) 2022-02-25

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