KR102357098B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102357098B1
KR102357098B1 KR1020140094859A KR20140094859A KR102357098B1 KR 102357098 B1 KR102357098 B1 KR 102357098B1 KR 1020140094859 A KR1020140094859 A KR 1020140094859A KR 20140094859 A KR20140094859 A KR 20140094859A KR 102357098 B1 KR102357098 B1 KR 102357098B1
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transistor
film
semiconductor film
oxide semiconductor
gate electrode
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KR20150015383A (ko
Inventor
마사유키 사카쿠라
다이스케 마츠바야시
요시유키 코바야시
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020140094859A 2013-07-31 2014-07-25 반도체 장치 Active KR102357098B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020220010587A KR102419951B1 (ko) 2013-07-31 2022-01-25 반도체 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013159512 2013-07-31
JPJP-P-2013-159512 2013-07-31

Related Child Applications (1)

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Publications (2)

Publication Number Publication Date
KR20150015383A KR20150015383A (ko) 2015-02-10
KR102357098B1 true KR102357098B1 (ko) 2022-01-27

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KR1020220010587A Active KR102419951B1 (ko) 2013-07-31 2022-01-25 반도체 장치

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US (1) US9130047B2 (enExample)
JP (6) JP6410496B2 (enExample)
KR (2) KR102357098B1 (enExample)

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US9419721B2 (en) * 2013-03-15 2016-08-16 Lawrence Livermore National Security, Llc Wide bandgap matrix switcher, amplifier and oscillator
US10529740B2 (en) * 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
JP6541398B2 (ja) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6565339B2 (ja) * 2015-05-29 2019-08-28 カシオ計算機株式会社 充電装置、電子機器、及び充電方法
KR102366568B1 (ko) * 2015-06-11 2022-02-25 삼성디스플레이 주식회사 박막트랜지스터 기판 및 이를 구비한 유기 발광 표시 장치
US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR20180123028A (ko) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
CN105633101A (zh) * 2016-04-01 2016-06-01 京东方科技集团股份有限公司 Tft阵列基板及其制造方法、显示装置
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KR102384624B1 (ko) * 2016-10-21 2022-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US12132334B2 (en) 2018-11-22 2024-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and battery pack
CN113196546A (zh) 2018-12-20 2021-07-30 株式会社半导体能源研究所 半导体装置及电池组
CN111613637B (zh) * 2019-02-26 2022-10-28 京东方科技集团股份有限公司 一种显示基板及其不良调整方法和显示装置
CN109979378B (zh) * 2019-05-15 2020-12-04 京东方科技集团股份有限公司 像素驱动电路和显示面板
CN110600488B (zh) * 2019-10-12 2025-03-28 京东方科技集团股份有限公司 一种氧化物薄膜晶体管及其驱动方法、显示装置
US11646379B2 (en) 2020-06-23 2023-05-09 Taiwan Semiconductor Manufacturing Company Limited Dual-layer channel transistor and methods of forming same
JP7628423B2 (ja) * 2020-12-01 2025-02-10 株式会社ジャパンディスプレイ 表示装置
KR102861304B1 (ko) * 2021-11-09 2025-09-17 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치
WO2025017417A1 (ja) * 2023-07-14 2025-01-23 株式会社半導体エネルギー研究所 半導体装置

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