KR102334468B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102334468B1
KR102334468B1 KR1020197037728A KR20197037728A KR102334468B1 KR 102334468 B1 KR102334468 B1 KR 102334468B1 KR 1020197037728 A KR1020197037728 A KR 1020197037728A KR 20197037728 A KR20197037728 A KR 20197037728A KR 102334468 B1 KR102334468 B1 KR 102334468B1
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film
transistor
semiconductor film
semiconductor
insulating film
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Korean (ko)
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KR20190143477A (ko
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유타카 시오노이리
고세이 노다
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L27/1214—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H01L21/76254—
    • H01L27/1222—
    • H01L27/1225—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Geometry (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
KR1020197037728A 2009-10-30 2010-10-06 반도체 장치 Active KR102334468B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217038926A KR102473794B1 (ko) 2009-10-30 2010-10-06 반도체 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2009-250665 2009-10-30
JP2009250665 2009-10-30
KR1020187036160A KR102062077B1 (ko) 2009-10-30 2010-10-06 반도체 장치
PCT/JP2010/067999 WO2011052386A1 (en) 2009-10-30 2010-10-06 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020187036160A Division KR102062077B1 (ko) 2009-10-30 2010-10-06 반도체 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020217038926A Division KR102473794B1 (ko) 2009-10-30 2010-10-06 반도체 장치

Publications (2)

Publication Number Publication Date
KR20190143477A KR20190143477A (ko) 2019-12-30
KR102334468B1 true KR102334468B1 (ko) 2021-12-06

Family

ID=43921812

Family Applications (7)

Application Number Title Priority Date Filing Date
KR1020197037728A Active KR102334468B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020187036160A Active KR102062077B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020227041631A Active KR102808755B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020257015227A Pending KR20250075719A (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020177027911A Active KR101930730B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020217038926A Active KR102473794B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020127013414A Ceased KR20120091239A (ko) 2009-10-30 2010-10-06 반도체 장치

Family Applications After (6)

Application Number Title Priority Date Filing Date
KR1020187036160A Active KR102062077B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020227041631A Active KR102808755B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020257015227A Pending KR20250075719A (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020177027911A Active KR101930730B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020217038926A Active KR102473794B1 (ko) 2009-10-30 2010-10-06 반도체 장치
KR1020127013414A Ceased KR20120091239A (ko) 2009-10-30 2010-10-06 반도체 장치

Country Status (10)

Country Link
US (4) US20110101333A1 (https=)
EP (1) EP2494595A4 (https=)
JP (9) JP2011119671A (https=)
KR (7) KR102334468B1 (https=)
CN (1) CN102640279B (https=)
IN (1) IN2012DN03080A (https=)
MY (1) MY172111A (https=)
SG (3) SG10201406989QA (https=)
TW (2) TWI603458B (https=)
WO (1) WO2011052386A1 (https=)

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JP6091083B2 (ja) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
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KR102064865B1 (ko) 2011-06-08 2020-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP6832656B2 (ja) * 2016-09-14 2021-02-24 株式会社ジャパンディスプレイ 半導体装置の製造方法
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CN113921048B (zh) * 2021-10-19 2025-03-25 吉林大学 基于二位晶体管存储器的可进行四进制逻辑运算的集成电路
CN114664912B (zh) * 2022-03-28 2025-02-28 深圳市华星光电半导体显示技术有限公司 有机发光二极管显示面板及其制造方法
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