KR102311575B1 - 피처리체를 처리하는 방법 - Google Patents

피처리체를 처리하는 방법 Download PDF

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Publication number
KR102311575B1
KR102311575B1 KR1020150134479A KR20150134479A KR102311575B1 KR 102311575 B1 KR102311575 B1 KR 102311575B1 KR 1020150134479 A KR1020150134479 A KR 1020150134479A KR 20150134479 A KR20150134479 A KR 20150134479A KR 102311575 B1 KR102311575 B1 KR 102311575B1
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South Korea
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gas
plasma
region
mask
processing
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KR20160041764A (ko
Inventor
요시히데 기하라
도루 히사마츠
마사노부 혼다
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H01L21/0337—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01L21/02109—
    • H01L21/02274—
    • H01L21/0228—
    • H01L21/0234—
    • H01L21/32105—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020150134479A 2014-10-07 2015-09-23 피처리체를 처리하는 방법 Active KR102311575B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014206614A JP6382055B2 (ja) 2014-10-07 2014-10-07 被処理体を処理する方法
JPJP-P-2014-206614 2014-10-07

Publications (2)

Publication Number Publication Date
KR20160041764A KR20160041764A (ko) 2016-04-18
KR102311575B1 true KR102311575B1 (ko) 2021-10-08

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KR1020150134479A Active KR102311575B1 (ko) 2014-10-07 2015-09-23 피처리체를 처리하는 방법

Country Status (7)

Country Link
US (1) US9607811B2 (https=)
EP (1) EP3007205B1 (https=)
JP (1) JP6382055B2 (https=)
KR (1) KR102311575B1 (https=)
CN (2) CN112133630B (https=)
SG (1) SG10201508134VA (https=)
TW (1) TWI661464B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6559430B2 (ja) 2015-01-30 2019-08-14 東京エレクトロン株式会社 被処理体を処理する方法
JP6462477B2 (ja) * 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
WO2017170411A1 (ja) 2016-03-29 2017-10-05 東京エレクトロン株式会社 被処理体を処理する方法
KR20170114579A (ko) 2016-04-05 2017-10-16 주식회사 만도 전압 제어 방법 및 그 제어 시스템
JP6541618B2 (ja) * 2016-05-25 2019-07-10 東京エレクトロン株式会社 被処理体を処理する方法
JP6832171B2 (ja) 2017-01-24 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法
JP6895352B2 (ja) * 2017-09-12 2021-06-30 東京エレクトロン株式会社 被加工物を処理する方法
JP6886940B2 (ja) * 2018-04-23 2021-06-16 東京エレクトロン株式会社 プラズマ処理方法
CN110581050B (zh) * 2018-06-07 2024-06-11 东京毅力科创株式会社 处理方法和等离子体处理装置
TWI820667B (zh) * 2018-06-19 2023-11-01 美商應用材料股份有限公司 間隙填充物沉積方法及類金剛石之碳的間隙填充物材料
CN116837349A (zh) * 2018-07-26 2023-10-03 东京毅力科创株式会社 等离子体处理装置
JP7345283B2 (ja) * 2018-07-26 2023-09-15 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7178918B2 (ja) 2019-01-30 2022-11-28 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、及び処理システム
JP7240946B2 (ja) * 2019-04-26 2023-03-16 株式会社トリケミカル研究所 酸化珪素膜形成方法
US11955318B2 (en) 2021-03-12 2024-04-09 Applied Materials, Inc. Ash rate recovery method in plasma strip chamber
TW202308466A (zh) * 2021-06-22 2023-02-16 日商東京威力科創股份有限公司 電漿處理方法、電漿處理裝置及電漿處理系統

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011109076A (ja) 2009-10-23 2011-06-02 Semiconductor Energy Lab Co Ltd 微結晶半導体及び薄膜トランジスタの作製方法
JP2011228707A (ja) * 2010-04-14 2011-11-10 Asm Genitech Korea Ltd 半導体素子の微細パターン形成方法
US20110318931A1 (en) 2010-06-29 2011-12-29 Jae-Ho Min Method of Forming a Micro-Pattern for Semiconductor Devices
US20140134812A1 (en) * 2012-11-13 2014-05-15 Dong-chan Kim Method of fabricating semiconductor device
US20150000842A1 (en) 2012-02-20 2015-01-01 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04137725A (ja) * 1990-09-28 1992-05-12 Tonen Corp ガラス基板多結晶シリコン薄膜
JP4137725B2 (ja) * 2002-07-10 2008-08-20 松下電器産業株式会社 接合部材の加工寸法決定方法および装置
JP4515278B2 (ja) * 2005-02-16 2010-07-28 東京エレクトロン株式会社 エッチング方法、エッチング方法を実行するための制御プログラム、制御プログラム記憶媒体及び処理装置
JP2007123766A (ja) * 2005-10-31 2007-05-17 Tokyo Electron Ltd エッチング方法、プラズマ処理装置及び記憶媒体
KR101073858B1 (ko) * 2007-06-08 2011-10-14 도쿄엘렉트론가부시키가이샤 패터닝 방법
US7790531B2 (en) * 2007-12-18 2010-09-07 Micron Technology, Inc. Methods for isolating portions of a loop of pitch-multiplied material and related structures
US8647722B2 (en) * 2008-11-14 2014-02-11 Asm Japan K.K. Method of forming insulation film using plasma treatment cycles
JP4733214B1 (ja) * 2010-04-02 2011-07-27 東京エレクトロン株式会社 マスクパターンの形成方法及び半導体装置の製造方法
JP5674375B2 (ja) * 2010-08-03 2015-02-25 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US8298951B1 (en) * 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
WO2014042192A1 (ja) * 2012-09-13 2014-03-20 東京エレクトロン株式会社 被処理基体を処理する方法、及びプラズマ処理装置
JP6366454B2 (ja) * 2014-10-07 2018-08-01 東京エレクトロン株式会社 被処理体を処理する方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011109076A (ja) 2009-10-23 2011-06-02 Semiconductor Energy Lab Co Ltd 微結晶半導体及び薄膜トランジスタの作製方法
JP2011228707A (ja) * 2010-04-14 2011-11-10 Asm Genitech Korea Ltd 半導体素子の微細パターン形成方法
US20110318931A1 (en) 2010-06-29 2011-12-29 Jae-Ho Min Method of Forming a Micro-Pattern for Semiconductor Devices
US20150000842A1 (en) 2012-02-20 2015-01-01 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
US20140134812A1 (en) * 2012-11-13 2014-05-15 Dong-chan Kim Method of fabricating semiconductor device

Also Published As

Publication number Publication date
US20160099131A1 (en) 2016-04-07
TW201626434A (zh) 2016-07-16
EP3007205A1 (en) 2016-04-13
KR20160041764A (ko) 2016-04-18
JP2016076621A (ja) 2016-05-12
EP3007205B1 (en) 2017-08-16
CN112133630A (zh) 2020-12-25
CN112133630B (zh) 2024-08-13
CN105489483A (zh) 2016-04-13
TWI661464B (zh) 2019-06-01
US9607811B2 (en) 2017-03-28
SG10201508134VA (en) 2016-05-30
JP6382055B2 (ja) 2018-08-29

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