CN112133630B - 处理具有掩模的被处理体的方法 - Google Patents

处理具有掩模的被处理体的方法 Download PDF

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Publication number
CN112133630B
CN112133630B CN202011049271.8A CN202011049271A CN112133630B CN 112133630 B CN112133630 B CN 112133630B CN 202011049271 A CN202011049271 A CN 202011049271A CN 112133630 B CN112133630 B CN 112133630B
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China
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mask
gas
region
silicon
opening
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Chinese (zh)
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CN112133630A (zh
Inventor
木原嘉英
久松亨
本田昌伸
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN202011049271.8A 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法 Active CN112133630B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011049271.8A CN112133630B (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014206614A JP6382055B2 (ja) 2014-10-07 2014-10-07 被処理体を処理する方法
JP2014-206614 2014-10-07
CN201510634852.0A CN105489483A (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法
CN202011049271.8A CN112133630B (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法

Related Parent Applications (1)

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CN201510634852.0A Division CN105489483A (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法

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CN112133630A CN112133630A (zh) 2020-12-25
CN112133630B true CN112133630B (zh) 2024-08-13

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CN201510634852.0A Pending CN105489483A (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法

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US (1) US9607811B2 (https=)
EP (1) EP3007205B1 (https=)
JP (1) JP6382055B2 (https=)
KR (1) KR102311575B1 (https=)
CN (2) CN112133630B (https=)
SG (1) SG10201508134VA (https=)
TW (1) TWI661464B (https=)

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JP6559430B2 (ja) 2015-01-30 2019-08-14 東京エレクトロン株式会社 被処理体を処理する方法
JP6462477B2 (ja) * 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
WO2017170411A1 (ja) 2016-03-29 2017-10-05 東京エレクトロン株式会社 被処理体を処理する方法
KR20170114579A (ko) 2016-04-05 2017-10-16 주식회사 만도 전압 제어 방법 및 그 제어 시스템
JP6541618B2 (ja) * 2016-05-25 2019-07-10 東京エレクトロン株式会社 被処理体を処理する方法
JP6832171B2 (ja) 2017-01-24 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法
JP6895352B2 (ja) * 2017-09-12 2021-06-30 東京エレクトロン株式会社 被加工物を処理する方法
JP6886940B2 (ja) * 2018-04-23 2021-06-16 東京エレクトロン株式会社 プラズマ処理方法
CN110581050B (zh) * 2018-06-07 2024-06-11 东京毅力科创株式会社 处理方法和等离子体处理装置
TWI820667B (zh) * 2018-06-19 2023-11-01 美商應用材料股份有限公司 間隙填充物沉積方法及類金剛石之碳的間隙填充物材料
CN116837349A (zh) * 2018-07-26 2023-10-03 东京毅力科创株式会社 等离子体处理装置
JP7345283B2 (ja) * 2018-07-26 2023-09-15 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7178918B2 (ja) 2019-01-30 2022-11-28 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、及び処理システム
JP7240946B2 (ja) * 2019-04-26 2023-03-16 株式会社トリケミカル研究所 酸化珪素膜形成方法
US11955318B2 (en) 2021-03-12 2024-04-09 Applied Materials, Inc. Ash rate recovery method in plasma strip chamber
TW202308466A (zh) * 2021-06-22 2023-02-16 日商東京威力科創股份有限公司 電漿處理方法、電漿處理裝置及電漿處理系統

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Publication number Publication date
US20160099131A1 (en) 2016-04-07
TW201626434A (zh) 2016-07-16
EP3007205A1 (en) 2016-04-13
KR20160041764A (ko) 2016-04-18
JP2016076621A (ja) 2016-05-12
EP3007205B1 (en) 2017-08-16
CN112133630A (zh) 2020-12-25
CN105489483A (zh) 2016-04-13
KR102311575B1 (ko) 2021-10-08
TWI661464B (zh) 2019-06-01
US9607811B2 (en) 2017-03-28
SG10201508134VA (en) 2016-05-30
JP6382055B2 (ja) 2018-08-29

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