JP7240946B2 - 酸化珪素膜形成方法 - Google Patents
酸化珪素膜形成方法 Download PDFInfo
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
成膜技術が求められ。二酸化珪素膜成膜技術として、O源としてH2Oを用いるALD法として、Lwis塩基を触媒として利用する方法がある。(非特許文献1,2)
(式1)
Si-OH*+SiCl4+NH3→Si-O-Si-Cl3 *+HCl+NH3
(式2)
Si-O-Si-Cl3 *+H2O+NH3→Si-O-Si-OH*+HCl+NH3
基体上に酸化珪素膜を形成する方法であって、
成膜装置内にSiBrnX4-n(nは1~4の整数、XはBr以外のハロゲン),H2O,C5H5Nが供給され、
成膜装置内の基体上に酸化珪素膜が形成される酸化珪素膜形成方法を提案する。
本発明は酸化珪素(SiOx(xは、例えば1から2の数値))膜形成方法である。例えば、二酸化珪素(SiO2)膜形成方法である。前記方法は基体上に前記酸化珪素膜を形成する方法である。前記方法は、好ましくは、ALD法を用いた方法である。薄膜形成技術にはCVD法も知られている。しかしながら、本発明にあっては、好ましくは、ALD法を用いた成膜方法である。その理由は次の通りである。CVD法が用いられた場合、副生成物であるピリジニウム塩類や、物理吸着したH2Oが十分に除外されないまま成膜が進行する。この為、酸化珪素膜の緻密性や均質性が低下する恐れが有った。
より好ましくは90℃以上であった。更に好ましくは100℃以上であった。もっと好ましくは110℃以上であった。好ましくは200℃以下であった。更に好ましくは180℃以下であった。もっと好ましくは160℃以下であった。前記温度が高くなり過ぎると、成膜速度が著しく低下する。前記温度が低くなり過ぎると、不純物が酸化珪素膜に残留し、膜質が悪化する。
前記成膜室に保持された基体は110℃に保持された。
成膜室内は真空状態に保持された。
前記成膜室に保持された基体は70℃,90℃,110℃,130℃,150℃に保持された。
前記成膜室内は真空状態に保持された。
前記実施例1と同様なサイクル(工程A”→工程C→工程B→工程C)が60回繰り返された。基体上には二酸化珪素膜が形成された。
Claims (7)
- 基体上に酸化珪素膜を形成する方法であって、
成膜装置内にSiBr4 とC5H5Nとが供給される工程Aと、
成膜装置内にH 2 OとC 5 H 5 Nとが供給される工程B
とを有し、
前記工程Aと前記工程Bとが交互に繰り返される
酸化珪素膜形成方法。 - 成膜装置内が脱気される工程Cを有し、
前記工程Aと前記工程Bとの間に前記工程Cが有る
請求項1の酸化珪素膜形成方法。 - 前記SiBr4による暴露量が0.3~100torr・sec、前記SiBr4と共に供給される前記C5H5Nによる暴露量が0.3~100torr・secであり、
前記H2Oによる暴露量が0.3~50torr・sec、前記H2Oと共に供給される前記C5H5Nによる暴露量が0.3~50torr・secである
請求項1又は請求項2の酸化珪素膜形成方法。 - 前記基体は80~200℃に保持される
請求項1~請求項3いずれかの酸化珪素膜形成方法。 - 酸化珪素膜形成はALD法が用いられる
請求項1~請求項4いずれかの酸化珪素膜形成方法。 - 形成された酸化珪素膜の絶縁耐力が4MV/cm以上である
請求項1~請求項5いずれかの酸化珪素膜形成方法。 - 形成された酸化珪素膜の密度が2g/cm3以上である
請求項1~請求項6いずれかの酸化珪素膜形成方法。
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JP2019085520A JP7240946B2 (ja) | 2019-04-26 | 2019-04-26 | 酸化珪素膜形成方法 |
TW108127442A TWI834700B (zh) | 2019-04-26 | 2019-08-02 | 氧化矽膜形成方法 |
KR1020190109344A KR20200125379A (ko) | 2019-04-26 | 2019-09-04 | 산화규소막 형성방법 |
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JP7240946B2 true JP7240946B2 (ja) | 2023-03-16 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008141191A (ja) | 2006-11-14 | 2008-06-19 | Applied Materials Inc | 低温ALDSiO2 |
JP2010219500A (ja) | 2009-02-17 | 2010-09-30 | Hitachi Kokusai Electric Inc | 半導体デバイスの製造方法、基板処理装置、半導体デバイス |
JP2016076621A (ja) | 2014-10-07 | 2016-05-12 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
WO2018193538A1 (ja) | 2017-04-19 | 2018-10-25 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置および記録媒体 |
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JP6232219B2 (ja) | 2013-06-28 | 2017-11-15 | 東京エレクトロン株式会社 | 多層保護膜の形成方法 |
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- 2019-04-26 JP JP2019085520A patent/JP7240946B2/ja active Active
- 2019-09-04 KR KR1020190109344A patent/KR20200125379A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008141191A (ja) | 2006-11-14 | 2008-06-19 | Applied Materials Inc | 低温ALDSiO2 |
JP2010219500A (ja) | 2009-02-17 | 2010-09-30 | Hitachi Kokusai Electric Inc | 半導体デバイスの製造方法、基板処理装置、半導体デバイス |
JP2016076621A (ja) | 2014-10-07 | 2016-05-12 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
WO2018193538A1 (ja) | 2017-04-19 | 2018-10-25 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置および記録媒体 |
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KR20200125379A (ko) | 2020-11-04 |
TW202039916A (zh) | 2020-11-01 |
JP2020181938A (ja) | 2020-11-05 |
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