KR102297508B1 - 필드 대 피처 콘트라스트를 사용하는 ｔｓｖ 조 평가 - Google Patents

필드 대 피처 콘트라스트를 사용하는 ｔｓｖ 조 평가 Download PDF

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KR102297508B1
KR102297508B1 KR1020140073074A KR20140073074A KR102297508B1 KR 102297508 B1 KR102297508 B1 KR 102297508B1 KR 1020140073074 A KR1020140073074 A KR 1020140073074A KR 20140073074 A KR20140073074 A KR 20140073074A KR 102297508 B1 KR102297508 B1 KR 102297508B1
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electroplating
current density
electrode
potential
experiment
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KR20140146015A (ko
Inventor
리 브로건
스티븐 티. 메이어
매튜 토룸
조셉 리차드슨
데이비드 더블유. 포터
하이잉 푸
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램 리써치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00—Forme preparation
    • B41C1/18—Curved printing formes or printing cylinders
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C25D21/14—Controlled addition of electrolyte components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/413—Concentration cells using liquid electrolytes measuring currents or voltages in voltaic cells
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416—Systems
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H05K3/241—Reinforcing of the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Molecular Biology (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020140073074A 2013-06-14 2014-06-16 필드 대 피처 콘트라스트를 사용하는 ｔｓｖ 조 평가 Active KR102297508B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210114197A KR102335508B1 (ko) 2013-06-14 2021-08-27 필드 대 피처 콘트라스트를 사용하는 ｔｓｖ 조 평가

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361835418P 2013-06-14 2013-06-14
US61/835,418 2013-06-14
US14/275,750 2014-05-12
US14/275,750 US9689083B2 (en) 2013-06-14 2014-05-12 TSV bath evaluation using field versus feature contrast

Related Child Applications (1)

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KR1020210114197A Division KR102335508B1 (ko) 2013-06-14 2021-08-27 필드 대 피처 콘트라스트를 사용하는 ｔｓｖ 조 평가

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KR20140146015A KR20140146015A (ko) 2014-12-24
KR102297508B1 true KR102297508B1 (ko) 2021-09-02

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KR1020140073074A Active KR102297508B1 (ko) 2013-06-14 2014-06-16 필드 대 피처 콘트라스트를 사용하는 ｔｓｖ 조 평가
KR1020210114197A Active KR102335508B1 (ko) 2013-06-14 2021-08-27 필드 대 피처 콘트라스트를 사용하는 ｔｓｖ 조 평가

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US (2) US9689083B2 (cg-RX-API-DMAC7.html)
JP (1) JP6433161B2 (cg-RX-API-DMAC7.html)
KR (2) KR102297508B1 (cg-RX-API-DMAC7.html)
CN (2) CN104233451B (cg-RX-API-DMAC7.html)
SG (2) SG10201802369YA (cg-RX-API-DMAC7.html)
TW (1) TWI643980B (cg-RX-API-DMAC7.html)

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JP6170938B2 (ja) 2011-12-12 2017-07-26 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 電気めっき溶液内のレベラー濃度の監視
US9598787B2 (en) * 2013-03-14 2017-03-21 Rohm And Haas Electronic Materials Llc Method of filling through-holes
US9689083B2 (en) 2013-06-14 2017-06-27 Lam Research Corporation TSV bath evaluation using field versus feature contrast
JP6890375B2 (ja) * 2014-10-21 2021-06-18 株式会社半導体エネルギー研究所 装置
US10094038B2 (en) 2015-04-13 2018-10-09 Lam Research Corporation Monitoring electrolytes during electroplating
CN105018977B (zh) * 2015-07-17 2017-09-12 深圳市板明科技有限公司 一种填孔电镀整平剂、制备方法及应用该整平剂的电镀液
US10508357B2 (en) 2016-02-15 2019-12-17 Rohm And Haas Electronic Materials Llc Method of filling through-holes to reduce voids and other defects
US10512174B2 (en) 2016-02-15 2019-12-17 Rohm And Haas Electronic Materials Llc Method of filling through-holes to reduce voids and other defects
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US20180202060A1 (en) * 2017-01-18 2018-07-19 Eci Technology, Inc. Measurement of total accelerator in an electrodeposition solution
US10094035B1 (en) * 2017-10-16 2018-10-09 Lam Research Corporation Convection optimization for mixed feature electroplating
KR102785430B1 (ko) * 2017-11-17 2025-03-21 라시크 아이엔씨. 기재로부터의 프로세스 가스의 저장 및 전달을 위한 방법, 시스템, 및 디바이스
JP6971915B2 (ja) * 2018-06-05 2021-11-24 株式会社荏原製作所 めっき方法、めっき装置、及び限界電流密度を推定する方法
US10903050B2 (en) 2018-12-10 2021-01-26 Lam Research Corporation Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity
CN114514340B (zh) * 2019-07-26 2025-03-21 朗姆研究公司 先进封装应用的差别对比镀覆
US12305307B2 (en) 2020-01-10 2025-05-20 Lam Research Corporation TSV process window and fill performance enhancement by long pulsing and ramping
CN113311032B (zh) * 2020-02-27 2024-05-31 芯恩（青岛）集成电路有限公司 Ecp填充监测设备及监测方法

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US9689083B2 (en) 2017-06-27
US20140367279A1 (en) 2014-12-18
KR20140146015A (ko) 2014-12-24
SG10201802369YA (en) 2018-04-27
TW201510293A (zh) 2015-03-16
CN104233451A (zh) 2014-12-24
KR20210110787A (ko) 2021-09-09
SG10201402383QA (en) 2015-01-29
US20170241041A1 (en) 2017-08-24
KR102335508B1 (ko) 2021-12-06
US10508359B2 (en) 2019-12-17
JP2015001523A (ja) 2015-01-05
TWI643980B (zh) 2018-12-11
CN107858742B (zh) 2020-06-23
JP6433161B2 (ja) 2018-12-05
CN107858742A (zh) 2018-03-30
CN104233451B (zh) 2017-11-24

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Patent event date: 20140616

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