KR102283814B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102283814B1
KR102283814B1 KR1020167019508A KR20167019508A KR102283814B1 KR 102283814 B1 KR102283814 B1 KR 102283814B1 KR 1020167019508 A KR1020167019508 A KR 1020167019508A KR 20167019508 A KR20167019508 A KR 20167019508A KR 102283814 B1 KR102283814 B1 KR 102283814B1
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South Korea
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film
oxide semiconductor
semiconductor film
transistor
oxide
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KR20160098497A (ko
Inventor
슌페이 야마자키
šœ페이 야마자키
아키히사 시모무라
야스마사 야마네
유헤이 사토
테츠히로 타나카
마사시 츠부쿠
토시히코 타케우치
료 토쿠마루
미츠히로 이치조
사토시 토리우미
타카시 오츠키
토시야 엔도
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/7869—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H01L29/66969—
    • H01L29/78606—
    • H01L29/78618—
    • H01L29/78693—
    • H01L29/78696—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020167019508A 2013-12-25 2014-12-12 반도체 장치 Active KR102283814B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013267525 2013-12-25
JPJP-P-2013-267525 2013-12-25
PCT/IB2014/066832 WO2015097586A1 (en) 2013-12-25 2014-12-12 Semiconductor device

Publications (2)

Publication Number Publication Date
KR20160098497A KR20160098497A (ko) 2016-08-18
KR102283814B1 true KR102283814B1 (ko) 2021-07-29

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Country Status (5)

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US (3) US9478664B2 (enExample)
JP (4) JP6486674B2 (enExample)
KR (1) KR102283814B1 (enExample)
TW (1) TWI642187B (enExample)
WO (1) WO2015097586A1 (enExample)

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TWI672804B (zh) 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102422771B1 (ko) * 2014-07-31 2022-07-18 엘지디스플레이 주식회사 박막트랜지스터 및 이를 이용한 표시장치
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
TWI653686B (zh) 2015-08-26 2019-03-11 聯華電子股份有限公司 半導體結構與其製作方法
TWI650817B (zh) 2015-08-28 2019-02-11 聯華電子股份有限公司 半導體元件及其製作方法
US9412590B1 (en) 2015-08-31 2016-08-09 United Microelectronics Corp. Manufacturing method of oxide semiconductor device
TWI605587B (zh) 2015-11-02 2017-11-11 聯華電子股份有限公司 半導體元件及其製造方法
JP2018032839A (ja) * 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
DE112017000905T5 (de) * 2016-02-18 2018-10-25 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Herstellungsverfahren dafür, Anzeigevorrichtung und elektronisches Gerät
US10043917B2 (en) 2016-03-03 2018-08-07 United Microelectronics Corp. Oxide semiconductor device and method of manufacturing the same
WO2017149428A1 (en) * 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
KR102640383B1 (ko) 2016-03-22 2024-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
US10096720B2 (en) * 2016-03-25 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
KR102492209B1 (ko) * 2016-05-19 2023-01-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합 산화물 반도체 및 트랜지스터
TWI686929B (zh) 2016-05-20 2020-03-01 聯華電子股份有限公司 半導體元件
US9847428B1 (en) 2016-08-08 2017-12-19 United Microelectronics Corp. Oxide semiconductor device
US10008614B1 (en) 2017-03-21 2018-06-26 United Microelectronics Corp. Dual channel transistor
US10249695B2 (en) * 2017-03-24 2019-04-02 Apple Inc. Displays with silicon and semiconducting-oxide top-gate thin-film transistors
JP6990997B2 (ja) * 2017-06-06 2022-01-12 株式会社日立製作所 Ｍｅｍｓデバイス
US10340391B2 (en) 2017-06-29 2019-07-02 United Microelectronics Corp. Semiconductor device and method for fabricating the same
US10403743B2 (en) 2017-07-20 2019-09-03 United Microelectronics Corp. Manufacturing method of oxide semiconductor device
TWI631741B (zh) * 2017-10-19 2018-08-01 元太科技工業股份有限公司 驅動基板
US10276476B1 (en) 2018-05-17 2019-04-30 United Microelectronics Corp. Semiconductor device and method of forming the same
WO2019226958A1 (en) 2018-05-24 2019-11-28 The Research Foundation For The State University Of New York Capacitive sensor
JP7591496B2 (ja) * 2019-05-24 2024-11-28 株式会社半導体エネルギー研究所 半導体装置
KR20220039740A (ko) * 2019-07-26 2022-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2021027199A (ja) * 2019-08-06 2021-02-22 株式会社ジャパンディスプレイ 表示装置及びその製造方法
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
KR20210055832A (ko) * 2019-11-07 2021-05-18 삼성디스플레이 주식회사 표시 장치
KR102819862B1 (ko) * 2020-05-15 2025-06-12 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
KR20220010622A (ko) 2020-07-16 2022-01-26 삼성디스플레이 주식회사 표시 장치
US12113115B2 (en) * 2021-02-09 2024-10-08 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same
TW202529564A (zh) * 2023-12-28 2025-07-16 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
WO2025163446A1 (ja) * 2024-01-31 2025-08-07 株式会社半導体エネルギー研究所 半導体装置

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