KR102162539B1 - 표시 장치 및 전자 기기 - Google Patents

표시 장치 및 전자 기기 Download PDF

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Publication number
KR102162539B1
KR102162539B1 KR1020157024427A KR20157024427A KR102162539B1 KR 102162539 B1 KR102162539 B1 KR 102162539B1 KR 1020157024427 A KR1020157024427 A KR 1020157024427A KR 20157024427 A KR20157024427 A KR 20157024427A KR 102162539 B1 KR102162539 B1 KR 102162539B1
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South Korea
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wiring
layer
conductive layer
transistor
region
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Korean (ko)
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KR20150122166A (ko
Inventor
히데아키 시시도
히로유키 미야케
세이코 이노우에
코헤이 도요타카
코지 구스노키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • H01L27/1225—
    • H01L27/124—
    • H01L29/66—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020157024427A 2013-02-25 2014-02-20 표시 장치 및 전자 기기 Active KR102162539B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2013-034877 2013-02-25
JP2013034877 2013-02-25
JPJP-P-2013-154400 2013-07-25
JP2013154400 2013-07-25
PCT/JP2014/054785 WO2014129669A1 (en) 2013-02-25 2014-02-20 Display device and electronic device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207018551A Division KR102208600B1 (ko) 2013-02-25 2014-02-20 표시 장치 및 전자 기기

Publications (2)

Publication Number Publication Date
KR20150122166A KR20150122166A (ko) 2015-10-30
KR102162539B1 true KR102162539B1 (ko) 2020-10-08

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KR1020157024427A Active KR102162539B1 (ko) 2013-02-25 2014-02-20 표시 장치 및 전자 기기
KR1020207018551A Active KR102208600B1 (ko) 2013-02-25 2014-02-20 표시 장치 및 전자 기기
KR1020217002098A Active KR102295133B1 (ko) 2013-02-25 2014-02-20 반도체 장치

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KR1020207018551A Active KR102208600B1 (ko) 2013-02-25 2014-02-20 표시 장치 및 전자 기기
KR1020217002098A Active KR102295133B1 (ko) 2013-02-25 2014-02-20 반도체 장치

Country Status (5)

Country Link
US (1) US9482919B2 (enExample)
JP (7) JP6334950B2 (enExample)
KR (3) KR102162539B1 (enExample)
TW (1) TWI611566B (enExample)
WO (1) WO2014129669A1 (enExample)

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TWI567950B (zh) * 2015-01-08 2017-01-21 群創光電股份有限公司 顯示面板
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JP6949557B2 (ja) * 2017-05-25 2021-10-13 キヤノン株式会社 撮像装置、撮像システム、移動体
KR102385105B1 (ko) * 2018-02-27 2022-04-08 삼성전자주식회사 크랙 검출용 칩 및 이를 이용한 크랙 검출 방법
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US12463322B1 (en) 2019-04-03 2025-11-04 Micro Mobio Corporation Antenna in display
JPWO2020229917A1 (enExample) 2019-05-10 2020-11-19
JP7263120B2 (ja) * 2019-05-23 2023-04-24 株式会社ジャパンディスプレイ 表示装置及び表示パネル
KR102887191B1 (ko) * 2020-04-16 2025-11-17 삼성디스플레이 주식회사 표시 장치
CN112505961B (zh) * 2020-12-18 2023-07-25 深圳市华星光电半导体显示技术有限公司 显示装置及偏光片
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