KR102032158B1 - 백플레인 상의 발광 다이오드 어레이 및 그의 제조 방법 - Google Patents

백플레인 상의 발광 다이오드 어레이 및 그의 제조 방법 Download PDF

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KR102032158B1
KR102032158B1 KR1020177018302A KR20177018302A KR102032158B1 KR 102032158 B1 KR102032158 B1 KR 102032158B1 KR 1020177018302 A KR1020177018302 A KR 1020177018302A KR 20177018302 A KR20177018302 A KR 20177018302A KR 102032158 B1 KR102032158 B1 KR 102032158B1
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light emitting
emitting device
backplane
conductive bonding
subset
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KR20170095914A (ko
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네이탄 에프. 가드너
제이알. 프레드릭 에이. 키쉬
밀젠코 모드릭
애뉴샤 포크리얄
대니얼 브라이스 탐슨
파리바 대네쉬
샤론 엔. 파렌스
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글로 에이비
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    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
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    • H10H20/0364—Manufacture or treatment of packages of interconnections

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Laser Beam Processing (AREA)
  • Electroluminescent Light Sources (AREA)
  • Wire Bonding (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Light Receiving Elements (AREA)
KR1020177018302A 2014-12-19 2015-12-17 백플레인 상의 발광 다이오드 어레이 및 그의 제조 방법 Active KR102032158B1 (ko)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
US201462094525P 2014-12-19 2014-12-19
US201462094539P 2014-12-19 2014-12-19
US62/094,525 2014-12-19
US62/094,539 2014-12-19
US201562107606P 2015-01-26 2015-01-26
US62/107,606 2015-01-26
US201562153298P 2015-04-27 2015-04-27
US201562153291P 2015-04-27 2015-04-27
US62/153,298 2015-04-27
US62/153,291 2015-04-27
US201562161067P 2015-05-13 2015-05-13
US62/161,067 2015-05-13
PCT/US2015/066372 WO2016100662A1 (en) 2014-12-19 2015-12-17 Light emitting diode array on a backplane and method of making thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020197029270A Division KR102200058B1 (ko) 2014-12-19 2015-12-17 백플레인 상의 발광 다이오드 어레이 및 그의 제조 방법

Publications (2)

Publication Number Publication Date
KR20170095914A KR20170095914A (ko) 2017-08-23
KR102032158B1 true KR102032158B1 (ko) 2019-10-15

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KR1020177018097A Active KR102399346B1 (ko) 2014-12-19 2015-12-17 백플레인 상에 발광 다이오드 어레이 제조 방법
KR1020197029270A Active KR102200058B1 (ko) 2014-12-19 2015-12-17 백플레인 상의 발광 다이오드 어레이 및 그의 제조 방법
KR1020177018302A Active KR102032158B1 (ko) 2014-12-19 2015-12-17 백플레인 상의 발광 다이오드 어레이 및 그의 제조 방법

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KR1020197029270A Active KR102200058B1 (ko) 2014-12-19 2015-12-17 백플레인 상의 발광 다이오드 어레이 및 그의 제조 방법

Country Status (6)

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US (2) US10177123B2 (enExample)
EP (2) EP3235014B1 (enExample)
JP (4) JP2018508972A (enExample)
KR (3) KR102399346B1 (enExample)
CN (4) CN107210351B (enExample)
WO (2) WO2016100657A2 (enExample)

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