JP7523263B2 - 電子デバイス及び電子デバイスの製造方法 - Google Patents
電子デバイス及び電子デバイスの製造方法 Download PDFInfo
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- JP7523263B2 JP7523263B2 JP2020115596A JP2020115596A JP7523263B2 JP 7523263 B2 JP7523263 B2 JP 7523263B2 JP 2020115596 A JP2020115596 A JP 2020115596A JP 2020115596 A JP2020115596 A JP 2020115596A JP 7523263 B2 JP7523263 B2 JP 7523263B2
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Description
[表示装置10の構成]
図1を用いて、本発明の一実施形態に係る表示装置10について説明する。なお、図1では、表示装置10のうちの一部の画素構成について図示されている。図1は、本発明の一実施形態に係る表示装置の模式的な断面図である。図1に示すように表示装置10は、アレイ基板100、接続部材250、及びLEDチップ200を有する。アレイ基板100は、第1面101及び第2面103を備えている。第1面101と第2面103とは反対側の面である。アレイ基板100は、基準面109を有する。本実施形態において、基準面109はアレイ基板100に含まれる絶縁性基板(例えば、図14の絶縁性基板305B)の表面(上面)である。ただし、基準面109は、当該絶縁性基板の裏面(下面)であってもよい。基準面109は、上記絶縁性基板の上面又は下面のように実在する平坦な面だけでなく、アレイ基板100中において定義される平坦な仮想平面であってもよい。
アレイ基板100の絶縁性基板(例えば、図14の絶縁性基板305B)として、ガラス基板、石英基板、又はプラスチック基板(樹脂基板)などの透光性を有する基板を用いることができる。プラスチック基板として、ポリイミド基板、アクリル基板、シロキサン基板、又はフッ素樹脂基板などの可撓性を有する基板を用いることができる。また、アレイ基板100に導電性基板が用いられる場合、当該導電性基板としてステンレス基板又はアルミニウム基板などの金属基板を用いることができる。導電性基板が用いられる場合は、導電性基板の表面に絶縁層が形成されていてもよい。また、上記の絶縁性基板及び導電性基板の他に、シリコン基板、炭化シリコン基板、化合物半導体基板などの半導体基板をアレイ基板100に用いることができる。
図2~図6を用いて、表示装置10の製造方法を説明する。図2~図6は、本発明の一実施形態に係る表示装置の製造方法を示す断面図である。
図7~図10Bを用いて、本発明の一実施形態に係る表示装置10A及びその製造方法について説明する。なお、本実施形態では、表示装置10Aの製造後に画素の不良が確認された場合に、当該不良が発生した画素のLEDチップをリペアする方法について説明する。図7~図10Bは、本発明の一実施形態に係る表示装置のリペア方法を示す断面図である。以下の表示装置10Aの説明において、図1~図9で説明した第1実施形態の表示装置10と同様の特徴については説明を省略し、主に表示装置10との相違点について説明する。
図7に示すように、第1画素電極191Aの上に第1接続部材261Aを介して第1LEDチップ201Aが実装され、第2画素電極193Aの上に第2接続部材263Aを介して第2LEDチップ203Aが実装され、第3画素電極195Aの上に第3接続部材265Aを介して第3LEDチップ205Aが実装される。上記の3つの接続部材を特に区別する必要がない場合、これらをまとめて接続部材260Aという。なお、本実施形態では、第1接続部材261A、第2接続部材263A、及び第3接続部材265Aの各々の厚さは同じである。本実施形態では、第2LEDチップ203Aが発光せず、リペアをする必要がある場合について説明する。
図11~図14を用いて、本発明の一実施形態に係る表示装置の全体構成について説明する。なお、以下の実施形態に示す表示装置20Bは、第1実施形態における表示装置10の製造方法及び第2実施形態における表示装置10Aのリペア方法を適用して製造することができる。
図11は、本発明の一実施形態に係る表示装置の全体構成を示す平面図である。図11に示すように、表示装置20Bは、アレイ基板100B、フレキシブルプリント回路基板600B(FPC600B)、及びICチップ700Bを有する。表示装置20Bは表示領域22B、周辺領域24B、及び端子領域26Bに区分される。表示領域22Bは、LEDチップ200Bを含む画素回路110Bがマトリクス状に配置された領域であり、画像を表示する領域である。周辺領域24Bは、表示領域22Bの周囲の領域であり、画素回路110Bを制御するドライバ回路が設けられた領域である。端子領域26Bは、FPC600Bが設けられた領域である。周辺領域24B及び端子領域26Bの外縁のアレイ基板100Bの側面が第3面105Bである。ICチップ700BはFPC600B上に設けられている。ICチップ700Bは各画素回路110Bを駆動させるための信号を供給する。また、上記の例に限らず、例えばICチップ700Bはアレイ基板100Bに実装されるCOG(Chip on glass)構造であってもよい。
図12は、本発明の一実施形態に係る表示装置の回路構成を示すブロック図である。図12に示すように、画素回路110Bが配置された表示領域22Bに対して第2方向D2(列方向)に隣接する位置にはソースドライバ回路520Bが設けられており、表示領域22Bに対して第1方向D1(行方向)に隣接する位置にはゲートドライバ回路530Bが設けられている。ソースドライバ回路520B及びゲートドライバ回路530Bは、上記の周辺領域24Bに設けられている。ただし、ソースドライバ回路520B及びゲートドライバ回路530Bが設けられる領域は周辺領域24Bに限定されず、画素回路110Bが設けられた領域の外側であれば、どの領域でもよい。
図13は、本発明の一実施形態に係る表示装置の画素回路を示す回路図である。図13に示すように、画素回路110Bは駆動トランジスタ960B、選択トランジスタ970B、保持容量980B、及びLEDチップ200Bなどの素子を含む。選択トランジスタ970Bのソース電極は信号線971Bに接続され、選択トランジスタ970Bのゲート電極はゲート線973Bに接続されている。駆動トランジスタ960Bのソース電極はアノード電源線961Bに接続され、駆動トランジスタ960Bのドレイン電極はLEDチップ200Bのアノードに接続されている。LEDチップ200Bのカソードはカソード電源線963Bに接続されている。駆動トランジスタ960Bのゲート電極は選択トランジスタ970Bのドレイン電極に接続されている。保持容量980Bは駆動トランジスタ960Bのゲート電極及びドレイン電極に接続されている。信号線971Bには、LEDチップ200Bの発光強度を決める階調信号が供給される。ゲート線973Bには、上記の階調信号を書き込む画素行を選択する信号が供給される。
図14は、本発明の一実施形態に係る表示装置20Bの画素回路110Bの断面図である。図14に示すように、表示装置20Bは、トランジスタ300B及び配線部400Bを有する。トランジスタ300B及び配線部400Bによって画素回路110Bが構成されている。
トランジスタ300B及び配線部400Bを構成する各導電層及びゲート電極340Bとして、Al、Ti、Cr、Co、Ni、Mo、Hf、Ta、W、Bi、Ag、Cu及びこれらの合金又は化合物が用いられる。これらの導電層及びゲート電極として、上記の材料が単層で用いられてもよく積層で用いられてもよい。なお、配線部400Bを構成する各導電層として、例えば、インジウム・スズ酸化物(ITO)またはインジウム・亜鉛酸化物(IZO)などの透明導電材料が用いられてもよい。特に、導電層420Bとして透明導電材料が用いられる。画素電極190Bは、LEDチップ200Bから配線部400Bに向かって放出された光を上方に反射する機能を有する。したがって、画素電極190Bとして他の導電層よりも反射率が高い材料が用いられる。
Claims (10)
- 第1電極及び第2電極を備えたアレイ基板と、
前記第1電極の上に設けられた第1接続部材と、
前記第1接続部材の上に実装された第1LEDチップと、
前記第2電極の上に設けられた、前記第1接続部材よりも厚い第2接続部材と、
前記第2接続部材の上に実装された第2LEDチップと、
を有し、
前記アレイ基板の基準面から前記第2接続部材の上面までの距離は、前記基準面から前記第1接続部材の上面までの距離より大きく、
前記第1接続部材及び前記第2接続部材は有機物を含む電子デバイス。 - 前記第1LEDチップは、前記第2LEDチップと異なる色で発光する、請求項1に記載の電子デバイス。
- 前記第1接続部材及び前記第2接続部材の各々よりも厚い第3接続部材と、
前記第3接続部材の上に実装された、前記第1LEDチップ及び前記第2LEDチップの各々と異なる色で発光する第3LEDチップと、
をさらに有し、
前記アレイ基板は第3電極をさらに備え、
前記第3接続部材は、前記第3電極の上に設けられている、請求項2に記載の電子デバイス。 - 前記第2接続部材は、前記第1接続部材より1μm以上厚い、請求項1乃至3のいずれか一に記載の電子デバイス。
- 前記第3接続部材は、前記第2接続部材より1μm以上厚い、請求項3に記載の電子デバイス。
- 前記第1接続部材及び前記第2接続部材に含まれる有機物の量は、前記第1電極及び前記第2電極に含まれる有機物の量よりも多い、請求項1乃至5のいずれか一に記載の電子デバイス。
- 前記アレイ基板は、絶縁層をさらに有し、
前記第1電極及び前記第2電極の各々は、前記絶縁層に接している、請求項1乃至6のいずれか一に記載の電子デバイス。 - 前記アレイ基板は、絶縁層をさらに有し、
前記第1電極、前記第2電極、及び前記第3電極の各々は、前記絶縁層に接している、請求項3に記載の電子デバイス。 - 第1電極及び第2電極を含むアレイ基板を形成し、
前記第1電極の上に有機物を含む第1接続部材を形成し、
前記第2電極の上に、有機物を含み、前記第1接続部材よりも厚い第2接続部材を、前記アレイ基板の基準面から前記第2接続部材の上面までの距離が前記基準面から前記第1接続部材の上面までの距離より大きくなるように形成し、
前記第1接続部材の上に第1LEDチップを実装し、
前記第2接続部材の上に第2LEDチップを実装する電子デバイスの製造方法。 - 第1電極及び第2電極を含むアレイ基板を形成し、
前記第1電極の上に第1接続部材を形成し、
前記第2電極の上に第2接続部材を形成し、
前記第1接続部材の上に第1LEDチップを実装し、
前記第2接続部材の上に第2LEDチップを実装し、
前記第2LEDチップを前記第2電極から取り外し、
前記第2電極の上に前記第1接続部材より厚いリペア接続部材を、前記アレイ基板の基準面から前記リペア接続部材の上面までの距離が前記基準面から前記第1接続部材の上面までの距離より大きくなるように形成し、
前記リペア接続部材の上に前記第2LEDチップと同じ色で発光するリペアLEDチップを形成する電子デバイスの製造方法。
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JP2020074005A (ja) | 2015-12-01 | 2020-05-14 | シャープ株式会社 | 画像形成素子、及び製造方法 |
JP2020519001A (ja) | 2017-03-20 | 2020-06-25 | ホンコン ベイダ ジェイド バード ディスプレイ リミテッド | マイクロledの階層を積み重ねることによる半導体デバイスの作製 |
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JP2018508972A (ja) | 2014-12-19 | 2018-03-29 | グロ アーベーGlo Ab | バックプレーン上に発光ダイオードアレイを生成する方法 |
JP2020074005A (ja) | 2015-12-01 | 2020-05-14 | シャープ株式会社 | 画像形成素子、及び製造方法 |
JP2020519001A (ja) | 2017-03-20 | 2020-06-25 | ホンコン ベイダ ジェイド バード ディスプレイ リミテッド | マイクロledの階層を積み重ねることによる半導体デバイスの作製 |
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