TWI736334B - 發光二極體 - Google Patents

發光二極體 Download PDF

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TWI736334B
TWI736334B TW109121380A TW109121380A TWI736334B TW I736334 B TWI736334 B TW I736334B TW 109121380 A TW109121380 A TW 109121380A TW 109121380 A TW109121380 A TW 109121380A TW I736334 B TWI736334 B TW I736334B
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light
emitting diode
grasping
type semiconductor
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TW109121380A
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TW202201718A (zh
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郭修邑
許國翊
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隆達電子股份有限公司
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Priority to JP2020183485A priority patent/JP7208961B2/ja
Priority to US17/344,924 priority patent/US11569116B2/en
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Abstract

一種發光二極體包含主動層、第一型半導體層、第二型半導體層以及抓取層。第一型半導體層及第二型半導體層分別配置於主動層的相對兩側。抓取層配置於第二型半導體層上，其中抓取層具有一圖案化外表面作為移轉時的抓取面。

Description

發光二極體
本發明是關於一種發光二極體。
微型發光二極體(micro LED)為新一代的顯示技術。微型發光二極體的優點包含低功耗、高亮度、高解析度以及高色彩飽和度。因此，微型發光二極體組成的顯示面板被視為下一個世代的顯示技術的主流。
由於微型發光二極體的體積為微米等級，巨量轉移為必然且重要的製程。現行有許多巨量移轉方式，其中雷射移轉為目前有機會以最低成本，達到最高轉移效率的方式，但其移轉良率卻可能因微型發光二極體形態的不同而有所變動，無法成為穩定製程。因此，需要一種新穎的微型發光二極體及其製程，使其能採用雷射移轉的方式來達成巨量移轉，並同時提高移轉的良率。
本發明提出一種創新的發光二極體結構，解決先前技術的問題。
於本發明的一實施例中，一種發光二極體包含主動 層、第一型半導體層、第二型半導體層以及抓取層。第一型半導體層及第二型半導體層分別配置於主動層的相對兩側。抓取層配置於第二型半導體層上，其中抓取層具有一圖案化外表面作為移轉時的抓取面。
於本發明的一實施例中，抓取層可被主動層所發出的光線穿透。
於本發明的一實施例中，抓取層包含可被雷射解離之材料。
於本發明的一實施例中，抓取層包含有機材料。
於本發明的一實施例中，有機材料包含苯環丁烯(Benzocyclobutene)。
於本發明的一實施例中，抓取層包含感光高分子材料。
於本發明的一實施例中，第二型半導體層包含一粗糙化上表面。
於本發明的一實施例中，圖案化外表面為規則圖案化表面。
於本發明的一實施例中，粗糙化上表面為不規則粗化表面。
於本發明的一實施例中，粗糙化上表面與抓取層直接接觸。
綜上所述，本發明的之發光二極體選用抓取層的適當材質，不但能形成圖案化外表面作為移轉時的抓取面，還能作為雷射剝離製程的犧牲層，使發光二極體結構能以 較少層數、較低成本達到較高的轉移效率。由於抓取面為具有規則圖案，增加了抓取面與抓取裝置的接觸面積，相較於無圖案化的平整抓取面，可改善抓取時的穩定度，降低抓取失敗的機率，提高晶粒移轉良率。
以下將以實施方式對上述之說明作詳細的描述，並對本發明之技術方案提供更進一步的解釋。
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附符號之說明如下：
100:發光二極體
100a:發光二極體
100b:發光二極體
100c:發光二極體
101:透光基板
101a:圖案化表面
102:基板
103:基板
104:第一型半導體層
105:基板
106:主動層
108:第二型半導體層
108a:粗糙化上表面
110:抓取層
110a:抓取面
110b:透光黏膠層
120:抓取裝置
171:第一接觸墊
172:第二接觸墊
181:第一焊接金屬層
182:第二焊接金屬層
190:絕緣層
200:雷射光
T1:厚度
T2:厚度
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下：第1圖係繪示依照本發明一實施例之一種發光二極體的剖面圖；以及第2~8圖係繪示依照本發明一實施例之一種發光二極體的製造方法之剖面圖。
為了使本發明之敘述更加詳盡與完備，可參照所附之圖式及以下所述各種實施例，圖式中相同之號碼代表相同或相似之元件。另一方面，眾所週知的元件與步驟並未描述於實施例中，以避免對本發明造成不必要的限制。
於實施方式與申請專利範圍中，涉及『電性連接』之描述，其可泛指一元件透過其他元件而間接電氣耦合至另一元件，或是一元件無須透過其他元件而直接電連結至另一元件。
於實施方式與申請專利範圍中，除非內文中對於冠詞有所特別限定，否則『一』與『該』可泛指單一個或複數個。
請參照第1圖，其繪示依照本發明一實施例之一種發光二極體的剖面圖。發光二極體100包含第一型半導體層104、主動層106、第二型半導體層108及抓取層110。在一些實施例中，主動層106係為具有多層結構的量子井(multiple quantum well,MQW)。量子井可以使電子與電洞有較高機會結合，並產生光線，提昇發光二極體100的發光效率。
在本實施例中，第一型半導體層104、主動層106及第二型半導體層108的總厚度T2大於抓取層110的厚度T1，但不以此為限。
第一型半導體層104及第二型半導體層108分別配置於主動層106的相對兩側。舉例來說，第一型半導體層104配置於主動層106的第一表面，而第二型半導體層108配置於主動層106的第二表面。第一型半導體層104與第二型半導體層108的導電類型(conductivity type)不同。在一些實施例中，第一型半導體層104為N型摻雜，而第二型半導體層108為P型摻雜。在某些實施例中，半導體層的材料包含三五族半導體，例如可為三族氮化物、三族磷化物、三族砷化物或三族磷砷化物。在本實施例中，第一型半導體層104可為N型摻雜的磷化鋁銦鎵(AlInGaP)，第二型半導體層108可為P型摻雜的磷化 鎵(GaP)。
發光二極體100還包含第一接觸墊171與第二接觸墊172，分別設置於第一型半導體層104與第二型半導體層108上。第一接觸墊171藉第一焊接金屬層181電性連接至基板105對應的電極上。第二接觸墊172藉第二焊接金屬層182電性連接至基板105對應的電極上。發光二極體100還包含絕緣層190位於第一、二型半導體層與主動層106的側壁上。絕緣層190除了提供絕緣之外，亦具有較佳的機械強度，避免第一型半導體層104、主動層106及第二型半導體層108受到損傷。
在本實施例中，抓取層110具有一圖案化外表面作為抓取面110a，且抓取面110a可為一規則圖案化表面，以利於抓取裝置控制其抓取的方式，但不以此為限。
在本實施例中，抓取層110因直接接觸第二型半導體層108之出光面，而為出光的路徑，故需能被主動層106所發出的光線穿透。
在本實施例中，第二型半導體層108與抓取層110接觸的表面可為一粗糙化上表面108a，藉以提高出光率。例如，可藉溼式蝕刻方式在第二型半導體層108的表面形成不規則粗化表面。
請參照第2~8圖，其繪示依照本發明一實施例之一種發光二極體的製造方法之剖面圖。在第2圖的步驟中，提供一透光基板101，透光基板101具有一規則圖案化表面101a，例如是一圖案化藍寶石基板。
在第3圖的步驟中，提供一包含原生基板103的磊晶沉積體以透光黏膠層110b黏著至透光基板101。磊晶沉積體依序包含第一型半導體層104、主動層106及第二型半導體層108沉積於基板103。在本實施例中，基板103可為砷化鎵(GaAs)基板。透光黏膠層110b可包含感光高分子材料，經光照後即固化成前述的抓取層110，且透光基板101之規則圖案化表面101a即轉印至抓取層110上，進而形成規則圖案化外表面的抓取面110a。
在第4圖的步驟中，將基板103從磊晶沉積體上移除。
在第5圖的步驟中，將磊晶沉積體元件化成複數個發光二極體黏著在透光基板101上。
在第6圖的步驟中，將透光基板101倒置，使用雷射光200照射欲轉移的發光二極體100b之抓取層110，使抓取層110與透光基板101之接面被解離破壞(即雷射剝離製程)，因而脫離透光基板101，而位於暫時基板102上。類似的雷射剝離製程可能需執行數次，藉以將所需顏色(例如紅色、綠色、藍色)的發光二極體從不同基板藉移轉至暫時基板102上。抓取層110需包含可被雷射解離之材料，始能採用雷射剝離(laser lift off,LLO)製程。抓取層110之材料可包含有機材料，例如苯環丁烯(Benzocyclobutene)等可被雷射解離材料。
在第7圖的步驟中，使用抓取裝置120從暫時基板102上抓取所需顏色(例如紅色、綠色、藍色)的發光二 極體(100a-c)。因為抓取面110a為圖案化表面，增加了抓取面110a與抓取裝置120的接觸面積，相較於無圖案化的平整抓取面，可改善抓取時的穩定度，降低抓取失敗的機率，提高晶粒移轉良率。影響抓取良率的因素包括了晶粒尺寸(抓取面面積大小)、抓取裝置120對晶粒的抓取力(例如黏度、吸力等)、及晶粒與暫時基板之間的接合力(暫時基板黏度、支撐架的硬度等)等，而抓取面圖案的形狀、密度、大小、深淺等條件，皆可依照不同情況進行調整，例如小晶粒使用小的、淺的圖案即可，大晶粒則需要較大或較深的圖案；或是當抓取裝置120的抓取力比較小時(例如黏度低)、暫時基板比較黏或是支撐架較硬時，抓取面110a可能需要使用又密又深的圖案；只要在晶粒放到移轉基板前(抓取圖案形成前)，考量上述參數，便可設計出最佳的抓取面圖案。
在第8圖的步驟中，使用抓取裝置120將已抓取的發光二極體(100a-c)轉移並電性連接至最終的基板105上。
本發明的之發光二極體選用抓取層的適當材質，不但能形成圖案化外表面作為移轉時的抓取面，還能作為雷射剝離製程的犧牲層，使發光二極體結構能以較少層數、較低成本達到較高的轉移效率。由於抓取面包含適當的規則圖案，強化了抓取面與抓取裝置之間的接合力以扺消晶片與暫時基板之間的接合力，降低抓取失敗的機率，同時可改善抓取時的穩定度，提高晶粒移轉良率。
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，於不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100:發光二極體
105:基板
104:第一型半導體層
106:主動層
108:第二型半導體層
108a:粗糙化上表面
110:抓取層
110a:抓取面
171:第一接觸墊
172:第二接觸墊
181:第一焊接金屬層
182:第二焊接金屬層
190:絕緣層
T1:厚度
T2:厚度

Claims (9)

  1. 一種發光二極體，包含：一主動層；一第一型半導體層及一第二型半導體層，分別配置於該主動層的相對兩側，其中該第二型半導體層包含一粗糙化上表面；以及一抓取層，配置於該第二型半導體層上，其中該抓取層具有一圖案化外表面作為移轉時的抓取面。
  2. 如請求項1所述之發光二極體，其中該抓取層可被該主動層所發出的光線穿透。
  3. 如請求項1所述之發光二極體，其中該抓取層包含可被雷射解離之材料。
  4. 如請求項1所述之發光二極體，其中該抓取層包含有機材料。
  5. 如請求項4所述之發光二極體，其中該有機材料包含苯環丁烯。
  6. 如請求項1所述之發光二極體，其中該抓取層包含感光高分子材料。
  7. 如請求項1所述之發光二極體，其中該圖案化外表面為規則圖案化表面。
  8. 如請求項1所述之發光二極體，其中該粗糙化上表面為不規則粗化表面。
  9. 如請求項1所述之發光二極體，其中該粗糙化上表面與該抓取層直接接觸。
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