JP6892481B2 - バックプレーン上に発光ダイオードアレイを生成する方法 - Google Patents
バックプレーン上に発光ダイオードアレイを生成する方法 Download PDFInfo
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- JP6892481B2 JP6892481B2 JP2019142489A JP2019142489A JP6892481B2 JP 6892481 B2 JP6892481 B2 JP 6892481B2 JP 2019142489 A JP2019142489 A JP 2019142489A JP 2019142489 A JP2019142489 A JP 2019142489A JP 6892481 B2 JP6892481 B2 JP 6892481B2
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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Description
本願は、米国仮出願第62/094,525号(2014年12月19日出願)、第62/094,539号(2014年12月19日出願)、第62/107,606号(2015年1月26日出願)、第62/153,291号(2015年4月27日出願)、第62/153,298号(2015年4月27日出願)、第62/161,067号(2015年5月13日出願)、の優先権の利益を享受する。これら全ての出願は、全ての目的において、その全体が参照により本明細書に組み入れられる。
本発明の実施の形態は主に半導体発光デバイスに関し、特にバックプレーン上の発光デバイスアレイを用いる放射性ディスプレイパネルおよびそれを製造する方法に関する。
図34Aを参照すると、工程内の構造が示される。これは、本開示の実施の形態に係る例示的な第4発光デバイスアセンブリを形成するのに用いられ得る。その実施の形態では、選択的レーザはんだ付けを用いてバックプレーンにデバイスを接着する。例示的な工程内第4発光デバイスアセンブリは、接着パッド(421、422、423)について同じ厚さを用いると共に導電性接着構造(431、432、433)について同じ高さを用いることによって、図32Aの例示的な工程内第2発光デバイスアセンブリまたは図33Aの例示的な工程内第3発光デバイスアセンブリから導かれうる。接着パッド(421、422、423)は、上述の接着パッド420と同じ組成を有してもよい。導電性接着構造(431、432、433)は、上述の導電性接着構造430と同じ組成を有してもよい。本実施の形態では、バックプレーン基板400は実質的に平坦な(すなわち、段付きでない)上面を有してもよいし、または図9に示されるような段付き上面を有してもよい。接着パッド(421、422、423)は、図32Aに示されるように同じ高さまたは異なる高さを有してもよい。導電性接着構造(431、432、433)は、図33Aに示されるように同じ高さまたは異なる高さを有してもよい。
図35Aを参照すると、工程内の構造が示される。これは、本開示の実施の形態に係る例示的な第5発光デバイスアセンブリを形成するのに用いられ得る。その実施の形態では、選択的レーザ加熱によるのではなくむしろ非選択的加熱によって同時にコンポーネントが接着される。例示的な工程内第5発光デバイスアセンブリは、図34Aの例示的な工程内第4発光デバイスアセンブリと同じであってもよい。本実施の形態では、バックプレーン基板400は実質的に平坦な(すなわち、段付きでない)上面を有してもよいし、または図9に示されるような段付き上面を有してもよい。接着パッド(421、422、423)は、図32Aに示されるように同じ高さまたは異なる高さを有してもよい。導電性接着構造(431、432、433)は、図33Aに示されるように同じ高さまたは異なる高さを有してもよい。
Claims (5)
- デバイスアセンブリを形成する方法であって、
基板上に複数のタイプのはんだ材部分を形成することであって、前記複数のタイプのはんだ材部分は、第1はんだ材を含む少なくともひとつの第1はんだ材部分と、第2はんだ材を含む少なくともひとつの第2はんだ材部分と、を備える、形成することと、
複数のタイプのデバイスを提供することであって、前記複数のタイプのデバイスは、少なくともひとつの第1接着パッドを含む第1タイプデバイスと、少なくともひとつの第2接着パッドを含む第2タイプデバイスと、を備え、前記第1および第2接着パッドは共通接着剤を含み、前記第1はんだ材と前記共通接着剤とは、第1共晶温度を有する第1共晶系を形成し、前記第2はんだ材と前記共通接着剤とは、前記第1共晶温度よりも高い第2共晶温度を有する第2共晶系を形成する、提供することと、
各第1接着パッドを対応する第1はんだ材部分上に置き、前記第1共晶温度より上で前記第2共晶温度より下の温度まで各第1接着パッドを熱することによって、前記第1タイプデバイスを前記基板に接着することと、
各第2接着パッドを対応する第2はんだ材部分上に置き、前記第2共晶温度より上の温度まで各第2接着パッドを熱することによって、前記第2タイプデバイスを前記基板に接着することと、を含む方法。 - 前記複数のタイプのはんだ材部分は、第3はんだ材を含む少なくともひとつの第3はんだ材部分を備え、
前記複数のタイプのデバイスは、前記共通接着剤を含む少なくともひとつの第3接着パッドを含む第3タイプデバイスを備え、前記第3はんだ材と前記共通接着剤とは、前記第2共晶温度よりも高い第3共晶温度を有する第3共晶系を形成し、
前記方法はさらに、各第3接着パッドを対応する第3はんだ材部分上に置き、前記第3共晶温度より上の温度まで各第3接着パッドを熱することによって、前記第3タイプデバイスを前記基板に接着することを含む請求項1に記載の方法。 - 前記第1はんだ材はInであり、
前記第2はんだ材はSnであり、
前記第3はんだ材はTeであり、
前記共通接着剤はCuである請求項2に記載の方法。 - 前記第1タイプデバイスは第1波長の光を発する第1発光デバイスを含み、
前記第2タイプデバイスは前記第1波長とは異なる第2波長の光を発する第2発光デバイスを含み、
前記第3タイプデバイスは前記第1波長とも前記第2波長とも異なる第3波長の光を発する第3発光デバイスを含む請求項2に記載の方法。 - 前記デバイスアセンブリは集積発光デバイスアセンブリであり、
前記基板は、前記集積発光デバイスアセンブリの放射性ディスプレイパネルのバックプレーンである請求項4に記載の方法。
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US10304810B2 (en) | 2019-05-28 |
WO2016100657A2 (en) | 2016-06-23 |
WO2016100657A3 (en) | 2016-08-11 |
JP2018508972A (ja) | 2018-03-29 |
JP6823893B2 (ja) | 2021-02-03 |
JP2020198437A (ja) | 2020-12-10 |
EP3235014A4 (en) | 2018-10-31 |
JP2020004978A (ja) | 2020-01-09 |
WO2016100662A1 (en) | 2016-06-23 |
KR20170095914A (ko) | 2017-08-23 |
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KR20190116574A (ko) | 2019-10-14 |
CN111081688B (zh) | 2023-11-14 |
EP3235347A2 (en) | 2017-10-25 |
US20180366450A1 (en) | 2018-12-20 |
CN107210351A (zh) | 2017-09-26 |
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