CN101248221B - 半导体基板制造方法 - Google Patents
半导体基板制造方法 Download PDFInfo
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- CN101248221B CN101248221B CN2006800308730A CN200680030873A CN101248221B CN 101248221 B CN101248221 B CN 101248221B CN 2006800308730 A CN2006800308730 A CN 2006800308730A CN 200680030873 A CN200680030873 A CN 200680030873A CN 101248221 B CN101248221 B CN 101248221B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP244021/2005 | 2005-08-25 | ||
JP2005244021 | 2005-08-25 | ||
PCT/JP2006/316635 WO2007023911A1 (ja) | 2005-08-25 | 2006-08-24 | 半導体基板製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101248221A CN101248221A (zh) | 2008-08-20 |
CN101248221B true CN101248221B (zh) | 2012-06-06 |
Family
ID=37771654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800308730A Active CN101248221B (zh) | 2005-08-25 | 2006-08-24 | 半导体基板制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8119499B2 (zh) |
EP (1) | EP1930486A4 (zh) |
JP (1) | JPWO2007023911A1 (zh) |
KR (1) | KR101060289B1 (zh) |
CN (1) | CN101248221B (zh) |
WO (1) | WO2007023911A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5076094B2 (ja) * | 2007-06-12 | 2012-11-21 | 株式会社 東北テクノアーチ | Iii族窒化物単結晶の製造方法、金属窒化物層を有する下地結晶基板、および多層構造ウエハ |
JP5060875B2 (ja) * | 2007-08-28 | 2012-10-31 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体とその製造方法 |
JP4877241B2 (ja) * | 2008-02-01 | 2012-02-15 | 豊田合成株式会社 | Iii族窒化物系化合物半導体基板の製造方法 |
KR20110099029A (ko) * | 2008-12-08 | 2011-09-05 | 알타 디바이씨즈, 인크. | 에피택셜 리프트 오프를 위한 다중 스택 증착 |
JP6117199B2 (ja) * | 2011-06-28 | 2017-04-19 | サン‐ゴバン、クリストー、エ、デテクトゥールSaint−Gobain Cristaux & Detecteurs | 半導体基板及び形成する方法 |
FR2978601B1 (fr) * | 2011-07-29 | 2016-05-13 | Nanovation | Procede de fabrication d'un substrat de gan ou d'un dispositif a base de gan sur substrat natif de type gan, utilisant une fine couche tampon sacrificielle |
US8492187B2 (en) * | 2011-09-29 | 2013-07-23 | International Business Machines Corporation | High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate |
KR101505121B1 (ko) | 2013-06-21 | 2015-03-23 | 비비에스에이 리미티드 | 3족 질화물 반도체층을 제조하는 방법 |
CN104134608A (zh) * | 2014-08-06 | 2014-11-05 | 上海世山科技有限公司 | 一种利用化学蚀刻的GaN基板的制作方法 |
CN107210351B (zh) | 2014-12-19 | 2021-01-08 | Glo公司 | 在背板上制造发光二极管阵列的方法 |
CN109427538B (zh) * | 2017-08-24 | 2021-04-02 | 中国科学院上海微系统与信息技术研究所 | 一种异质结构的制备方法 |
CN113270358B (zh) * | 2021-07-15 | 2021-09-14 | 苏州浪潮智能科技有限公司 | 一种制作GaN芯片的方法及GaN芯片 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1486513A (zh) * | 2001-01-15 | 2004-03-31 | 丰田合成株式会社 | Iii族氮化物半导体器件 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
JPH088217B2 (ja) * | 1991-01-31 | 1996-01-29 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
DE69431333T2 (de) * | 1993-10-08 | 2003-07-31 | Mitsubishi Cable Ind Ltd | GaN-Einkristall |
JP3184717B2 (ja) | 1993-10-08 | 2001-07-09 | 三菱電線工業株式会社 | GaN単結晶およびその製造方法 |
JP2000049092A (ja) | 1998-05-29 | 2000-02-18 | Matsushita Electron Corp | 窒化物半導体の結晶成長方法および窒化物半導体装置並びにその製造方法 |
US6218207B1 (en) * | 1998-05-29 | 2001-04-17 | Mitsushita Electronics Corporation | Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same |
TW449937B (en) * | 1999-02-26 | 2001-08-11 | Matsushita Electronics Corp | Semiconductor device and the manufacturing method thereof |
US6852161B2 (en) * | 2000-08-18 | 2005-02-08 | Showa Denko K.K. | Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device |
JP3631724B2 (ja) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
JP2002316898A (ja) | 2001-04-13 | 2002-10-31 | Hitachi Cable Ltd | 窒化物半導体基板の製造方法及び窒化物半導体基板 |
JP3812368B2 (ja) * | 2001-06-06 | 2006-08-23 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
JP4117156B2 (ja) * | 2002-07-02 | 2008-07-16 | 日本電気株式会社 | Iii族窒化物半導体基板の製造方法 |
US6818061B2 (en) * | 2003-04-10 | 2004-11-16 | Honeywell International, Inc. | Method for growing single crystal GaN on silicon |
JP2005001928A (ja) | 2003-06-11 | 2005-01-06 | Fujikura Ltd | 自立基板およびその製造方法 |
US7033961B1 (en) * | 2003-07-15 | 2006-04-25 | Rf Micro Devices, Inc. | Epitaxy/substrate release layer |
JP4218597B2 (ja) * | 2003-08-08 | 2009-02-04 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
JP4396816B2 (ja) * | 2003-10-17 | 2010-01-13 | 日立電線株式会社 | Iii族窒化物半導体基板およびその製造方法 |
US7482248B2 (en) * | 2004-12-03 | 2009-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
-
2006
- 2006-08-24 EP EP06796748.9A patent/EP1930486A4/en not_active Withdrawn
- 2006-08-24 CN CN2006800308730A patent/CN101248221B/zh active Active
- 2006-08-24 US US12/064,584 patent/US8119499B2/en active Active
- 2006-08-24 KR KR1020087006102A patent/KR101060289B1/ko active IP Right Grant
- 2006-08-24 JP JP2007532177A patent/JPWO2007023911A1/ja active Pending
- 2006-08-24 WO PCT/JP2006/316635 patent/WO2007023911A1/ja active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1486513A (zh) * | 2001-01-15 | 2004-03-31 | 丰田合成株式会社 | Iii族氮化物半导体器件 |
Non-Patent Citations (2)
Title |
---|
JP特开2000-49092A 2000.02.18 |
JP特开2005-1928A 2005.01.06 |
Also Published As
Publication number | Publication date |
---|---|
US20080299746A1 (en) | 2008-12-04 |
WO2007023911A1 (ja) | 2007-03-01 |
US8119499B2 (en) | 2012-02-21 |
CN101248221A (zh) | 2008-08-20 |
EP1930486A1 (en) | 2008-06-11 |
EP1930486A4 (en) | 2014-01-01 |
KR20080043833A (ko) | 2008-05-19 |
JPWO2007023911A1 (ja) | 2009-03-26 |
KR101060289B1 (ko) | 2011-08-29 |
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Owner name: FURUKAWA CO.,LTD. MITSUBISHI CHEMICAL CO.,LTD. DOW |
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Effective date of registration: 20100505 Address after: Miyagi Prefecture in Japan Applicant after: Tohoku Techno Arch Co., Ltd. Co-applicant after: Furukawa Co., Ltd. Co-applicant after: Mitsubishi Kasei Corporation Co-applicant after: Dowa Holding Co., Ltd. Co-applicant after: Dowa Holdings Co. Ltd Co-applicant after: Wavesquare Inc. Address before: Miyagi Prefecture in Japan Applicant before: Tohoku Techno Arch Co., Ltd. |
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