KR102029647B1 - 실리콘 단결정 기판의 결함 농도 평가 방법 - Google Patents

실리콘 단결정 기판의 결함 농도 평가 방법 Download PDF

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KR102029647B1
KR102029647B1 KR1020167014761A KR20167014761A KR102029647B1 KR 102029647 B1 KR102029647 B1 KR 102029647B1 KR 1020167014761 A KR1020167014761 A KR 1020167014761A KR 20167014761 A KR20167014761 A KR 20167014761A KR 102029647 B1 KR102029647 B1 KR 102029647B1
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silicon single
single crystal
crystal substrate
concentration
irradiation
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KR20160097200A (ko
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히로유키 카마다
료지 호시
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신에쯔 한도타이 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/06—Investigating concentration of particle suspensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
    • H01L21/02381—
    • H01L21/02598—
    • H01L21/28167—
    • H01L22/14—
    • H01L22/24—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

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  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
KR1020167014761A 2013-12-10 2014-11-12 실리콘 단결정 기판의 결함 농도 평가 방법 Active KR102029647B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013255250A JP6036670B2 (ja) 2013-12-10 2013-12-10 シリコン単結晶基板の欠陥濃度評価方法
JPJP-P-2013-255250 2013-12-10
PCT/JP2014/005680 WO2015087485A1 (ja) 2013-12-10 2014-11-12 シリコン単結晶基板の欠陥濃度評価方法

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KR20160097200A KR20160097200A (ko) 2016-08-17
KR102029647B1 true KR102029647B1 (ko) 2019-10-08

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US (1) US9773710B2 (enExample)
JP (1) JP6036670B2 (enExample)
KR (1) KR102029647B1 (enExample)
CN (1) CN105814676B (enExample)
DE (1) DE112014005230B4 (enExample)
WO (1) WO2015087485A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP6036670B2 (ja) * 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法
CN107112370B (zh) * 2015-06-30 2020-08-28 富士电机株式会社 半导体装置及其制造方法
JP6531729B2 (ja) * 2016-07-19 2019-06-19 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
JP6805015B2 (ja) * 2017-02-10 2020-12-23 グローバルウェーハズ・ジャパン株式会社 検量線の作成方法、炭素濃度測定方法及びシリコンウェハの製造方法
JP6844561B2 (ja) * 2018-03-09 2021-03-17 信越半導体株式会社 酸素濃度評価方法
JP6852703B2 (ja) * 2018-03-16 2021-03-31 信越半導体株式会社 炭素濃度評価方法
JP7006517B2 (ja) * 2018-06-12 2022-01-24 信越半導体株式会社 シリコン単結晶基板中の欠陥密度の制御方法
JP7351266B2 (ja) * 2020-07-07 2023-09-27 信越半導体株式会社 半導体装置の製造方法
JP7322832B2 (ja) * 2020-07-29 2023-08-08 信越半導体株式会社 量子コンピュータ用半導体装置の製造方法
CN112034008A (zh) * 2020-09-11 2020-12-04 电子科技大学 一种石墨烯晶体结构质量评价方法
CN119290973B (zh) * 2024-12-10 2025-05-30 江西联创光电超导应用有限公司 一种晶体缺陷检测分析方法及系统

Citations (2)

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JP2011151317A (ja) 2010-01-25 2011-08-04 Toyota Motor Corp 炭化珪素単結晶の欠陥検出方法
JP6036670B2 (ja) 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法

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JPH08102545A (ja) 1994-09-30 1996-04-16 Meidensha Corp 半導体素子のライフタイム制御方法
JPH0955415A (ja) * 1995-08-16 1997-02-25 Nippon Telegr & Teleph Corp <Ntt> 半導体中に発生した欠陥の評価方法
JP3984521B2 (ja) * 2002-09-20 2007-10-03 松下電器産業株式会社 透過型電子顕微鏡による観察方法
KR100722089B1 (ko) * 2002-10-18 2007-05-25 가부시키가이샤 섬코 실리콘 단결정 잉곳의 점결함 분포를 측정하는 방법
WO2006134662A1 (ja) * 2005-06-17 2006-12-21 Topcon Corporation 薄膜測定装置、薄膜測定方法および薄膜製造方法
CN101432622B (zh) * 2006-03-03 2013-05-29 国立大学法人新澙大学 存在于硅晶片中的原子空位的定量评价装置和方法
JP2008177296A (ja) * 2007-01-17 2008-07-31 Toyota Central R&D Labs Inc 半導体装置、ｐｎダイオード、ｉｇｂｔ、及びそれらの製造方法
JP4358889B1 (ja) * 2008-06-27 2009-11-04 日本エレクトロセンサリデバイス株式会社 ウエーハ欠陥検査装置
US8771415B2 (en) * 2008-10-27 2014-07-08 Sumco Corporation Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer
JP5515406B2 (ja) * 2009-05-15 2014-06-11 株式会社Ｓｕｍｃｏ シリコンウェーハおよびその製造方法
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JP2011151317A (ja) 2010-01-25 2011-08-04 Toyota Motor Corp 炭化珪素単結晶の欠陥検出方法
JP6036670B2 (ja) 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法

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JP6036670B2 (ja) 2016-11-30
DE112014005230B4 (de) 2025-04-30
US20160300768A1 (en) 2016-10-13
WO2015087485A1 (ja) 2015-06-18
CN105814676B (zh) 2018-08-28
DE112014005230T5 (de) 2016-08-18
JP2015115404A (ja) 2015-06-22
KR20160097200A (ko) 2016-08-17
CN105814676A (zh) 2016-07-27
US9773710B2 (en) 2017-09-26

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