JP4358889B1 - ウエーハ欠陥検査装置 - Google Patents
ウエーハ欠陥検査装置 Download PDFInfo
- Publication number
- JP4358889B1 JP4358889B1 JP2008192829A JP2008192829A JP4358889B1 JP 4358889 B1 JP4358889 B1 JP 4358889B1 JP 2008192829 A JP2008192829 A JP 2008192829A JP 2008192829 A JP2008192829 A JP 2008192829A JP 4358889 B1 JP4358889 B1 JP 4358889B1
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- infrared light
- specific resistance
- imaging
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000007547 defect Effects 0.000 title claims abstract description 62
- 238000007689 inspection Methods 0.000 title claims abstract description 60
- 238000003384 imaging method Methods 0.000 claims abstract description 76
- 238000005286 illumination Methods 0.000 claims abstract description 53
- 230000035945 sensitivity Effects 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 abstract description 17
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000013523 data management Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/8901—Optical details; Scanning details
- G01N21/8903—Optical details; Scanning details using a multiple detector array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/958—Inspecting transparent materials or objects, e.g. windscreens
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Textile Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
【解決手段】 赤外光に感度を有するラインセンサアレイを撮像素子として用いることにより、ウエーハ全体を同一の検査条件で行うことを可能にするとともに検査工程の高速化に対応可能なウエーハ検査装置を実現する。また、ウエーハの比抵抗の値を取得する手段を設けることにより、取得した比抵抗の値に応じた照明手段の照度に設定することにより欠陥の撮像に適切な照明を得ることができる。
【選択図】図1
Description
2 撮像手段
3 ライン型照明手段
4 ウエーハ載置台
5 リニアステージ
6 スライドガイド
7 光源
8 光ファイバー
9 ウエーハ
10 比抵抗測定手段
10a 測定プローブ
11 透過光量測定手段
61 スライドブッシュ
62 スライドシャフト
Claims (4)
- シリコンウエーハの表面に対峙させて設けた赤外光照明手段と、
前記赤外光照明手段の赤外光に感度を有するラインセンサアレイを備える撮像手段と、
前記撮像手段の画像から前記シリコンウエーハの表面あるいは内部にある欠陥を検出する画像処理装置と
から構成されるウエーハ欠陥検査装置であって、
前記シリコンウエーハの比抵抗の値を予め取得し、
前記赤外光照明手段は、前記取得した前記シリコンウエーハの比抵抗の値に応じて照度を調節するとともに、
前記撮像手段は、前記取得した前記シリコンウエーハの比抵抗の値に応じて赤外光に対する感度を調節する、
ことを特徴とするウエーハ欠陥検査装置。 - シリコンウエーハの表面に対峙させて設けた赤外光照明手段と、
前記赤外光照明手段の赤外光に感度を有するラインセンサアレイを備える撮像手段と、
前記シリコンウエーハを透過する赤外光の透過量の値を予め測定する透過光量測定手段と、
前記撮像手段の画像から前記シリコンウエーハの表面あるいは内部にある欠陥を検出する画像処理装置と
から構成されるウエーハ欠陥検査装置であって、
前記シリコンウエーハの比抵抗の値を予め取得し、
前記赤外光照明手段は、前記取得した前記シリコンウエーハの比抵抗の値に応じて照度を調節するとともに、
前記撮像手段は、前記測定した前記シリコンウエーハを透過する赤外光の透過量の値に応じて赤外光に対する感度を調節する、
ことを特徴とするウエーハ欠陥検査装置。 - 前記シリコンウエーハの比抵抗の値を測定する比抵抗測定手段を備えたことを特徴とする請求項1または2に記載のウエーハ欠陥検査装置。
- 前記撮像手段は、前記照明手段の調節だけでは前記シリコンウエーハを透過する赤外光の透過量が不足する場合に赤外光に対する感度を調節する、
ことを特徴とする請求項1から3のいずれか一つに記載のウエーハ欠陥検査装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008192829A JP4358889B1 (ja) | 2008-06-27 | 2008-06-27 | ウエーハ欠陥検査装置 |
US12/451,703 US8654191B2 (en) | 2008-06-27 | 2008-12-09 | Defect inspection device and defect inspection method for silicon wafer |
CN2008801007852A CN101933130B (zh) | 2008-06-27 | 2008-12-09 | 硅晶圆的缺陷检查装置及其缺陷检查方法 |
KR1020097025835A KR101296015B1 (ko) | 2008-06-27 | 2008-12-09 | 실리콘 웨이퍼의 결함 검사 장치 및 그 결함 검사 방법 |
PCT/JP2008/072725 WO2009157105A1 (ja) | 2008-06-27 | 2008-12-09 | シリコンウエーハの欠陥検査装置及びその欠陥検査方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008192829A JP4358889B1 (ja) | 2008-06-27 | 2008-06-27 | ウエーハ欠陥検査装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4358889B1 true JP4358889B1 (ja) | 2009-11-04 |
JP2010008392A JP2010008392A (ja) | 2010-01-14 |
Family
ID=41393491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008192829A Active JP4358889B1 (ja) | 2008-06-27 | 2008-06-27 | ウエーハ欠陥検査装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8654191B2 (ja) |
JP (1) | JP4358889B1 (ja) |
KR (1) | KR101296015B1 (ja) |
CN (1) | CN101933130B (ja) |
WO (1) | WO2009157105A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9786045B2 (en) | 2010-05-11 | 2017-10-10 | Sumco Corporation | Wafer defect inspection apparatus and method for inspecting a wafer defect |
CN111307819A (zh) * | 2020-03-16 | 2020-06-19 | 上海华力微电子有限公司 | 晶圆边缘缺陷检测系统及方法 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2010262034B2 (en) * | 2009-04-30 | 2013-01-10 | Hexagon Technology Center Gmbh | An inspection method and an inspection apparatus |
JP5556346B2 (ja) * | 2010-05-11 | 2014-07-23 | 株式会社Sumco | ウェーハ欠陥検査装置及びウェーハ欠陥検査方法 |
US10460998B2 (en) | 2010-11-09 | 2019-10-29 | Nikon Corporation | Method for inspecting substrate, substrate inspection apparatus, exposure system, and method for producing semiconductor device |
JP6004517B2 (ja) * | 2011-04-19 | 2016-10-12 | 芝浦メカトロニクス株式会社 | 基板検査装置、基板検査方法及び該基板検査装置の調整方法 |
EP2600323A3 (de) * | 2011-11-30 | 2013-12-25 | AIT Austrian Institute of Technology GmbH | Verfahren und eine Vorrichtung zur farbrichtigen Aufnahme eines Digitalbilds |
CN102569119A (zh) * | 2011-12-19 | 2012-07-11 | 立晔科技股份有限公司 | 晶片或晶圆检测装置 |
CN102788802A (zh) * | 2012-08-29 | 2012-11-21 | 苏州天准精密技术有限公司 | 一种多相机的工件质量检测方法 |
DE102012111835A1 (de) | 2012-12-05 | 2014-06-05 | Hseb Dresden Gmbh | Inspektionsvorrichtung |
JP6059000B2 (ja) * | 2012-12-12 | 2017-01-11 | 株式会社安永 | ウェハ欠陥検査装置 |
CN103630545A (zh) * | 2013-11-20 | 2014-03-12 | 江苏大学 | 基于近红外光波阵列的注塑叶片在线监测装置及方法 |
JP6036670B2 (ja) * | 2013-12-10 | 2016-11-30 | 信越半導体株式会社 | シリコン単結晶基板の欠陥濃度評価方法 |
CN106290390B (zh) * | 2015-05-24 | 2019-11-26 | 上海微电子装备(集团)股份有限公司 | 缺陷检测装置及方法 |
JP6402703B2 (ja) * | 2015-11-17 | 2018-10-10 | 信越半導体株式会社 | 欠陥領域の判定方法 |
US10692204B2 (en) * | 2016-08-01 | 2020-06-23 | The Boeing Company | System and method for high speed surface and subsurface FOD and defect detection |
JP2018121031A (ja) * | 2017-01-27 | 2018-08-02 | 株式会社ディスコ | レーザー加工装置 |
JP6975551B2 (ja) * | 2017-05-18 | 2021-12-01 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
US11060980B2 (en) * | 2017-11-29 | 2021-07-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Broadband wafer defect detection |
CN108831844B (zh) * | 2018-06-26 | 2019-12-06 | 长江存储科技有限责任公司 | 检测晶圆缺陷的方法和系统 |
TWI705244B (zh) * | 2018-07-31 | 2020-09-21 | 由田新技股份有限公司 | 半導體瑕疵檢測設備 |
EP3640630A1 (en) * | 2018-10-18 | 2020-04-22 | Infineon Technologies AG | Embedded wafer inspection |
CN109712912B (zh) * | 2018-12-06 | 2023-07-18 | 通富微电子股份有限公司 | 一种芯片倒装设备及方法 |
CN110487814A (zh) * | 2019-08-13 | 2019-11-22 | 东莞市创明电池技术有限公司 | 电池铝片缺陷检测装置 |
JP7382762B2 (ja) * | 2019-08-27 | 2023-11-17 | 株式会社ディスコ | レーザー加工装置の加工結果の良否判定方法 |
KR102453258B1 (ko) | 2020-01-15 | 2022-10-11 | 주식회사 커미조아 | 웨이퍼 모서리 결함 검사장치 및 검사방법 |
CN111554601B (zh) * | 2020-04-27 | 2021-12-28 | 上海果纳半导体技术有限公司 | 晶圆前端传送系统 |
CN112730252A (zh) * | 2020-12-30 | 2021-04-30 | 湖南三安半导体有限责任公司 | 晶圆检测装置 |
CN115931908B (zh) * | 2022-12-28 | 2024-05-07 | 杭州中为光电技术有限公司 | 一种硅棒缺陷自动检测系统及检测方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS627200A (ja) * | 1985-07-03 | 1987-01-14 | 株式会社日立製作所 | 接合状態検出装置 |
US5196375A (en) * | 1987-07-24 | 1993-03-23 | Kabushiki Kaisha Toshiba | Method for manufacturing bonded semiconductor body |
JPH03265152A (ja) * | 1990-03-15 | 1991-11-26 | Fujitsu Ltd | ウェーハの温度測定方法 |
JPH06102197A (ja) * | 1992-09-21 | 1994-04-15 | Kawasaki Steel Corp | 表面欠陥検出方法 |
JP3338118B2 (ja) | 1993-05-10 | 2002-10-28 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPH08220008A (ja) * | 1995-02-15 | 1996-08-30 | Mitsubishi Electric Corp | 赤外検査装置 |
JPH09311108A (ja) | 1996-05-24 | 1997-12-02 | Nikon Corp | 欠陥検査装置及び欠陥検査方法 |
JPH10253546A (ja) * | 1997-03-12 | 1998-09-25 | Toshiba Corp | 半導体基板の評価方法および評価装置 |
JPH10325805A (ja) * | 1997-05-23 | 1998-12-08 | Nikon Corp | 半導体ウエハの自動検査装置 |
JP3874562B2 (ja) * | 1998-02-19 | 2007-01-31 | 日本コントロールシステム株式会社 | ガラス板破砕試験方法、装置及びガラス試験用撮像方法 |
US6597444B1 (en) * | 2000-06-28 | 2003-07-22 | Advanced Micro Devices, Inc. | Determination of flux coverage |
JP2002340794A (ja) * | 2001-05-15 | 2002-11-27 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの赤外吸収測定法 |
JP4596968B2 (ja) * | 2005-05-11 | 2010-12-15 | 株式会社リコー | 半導体装置の不良箇所観察のためのシリコン基板加工方法及び不良箇所特定方法 |
JP4693642B2 (ja) * | 2006-01-30 | 2011-06-01 | 株式会社東芝 | 半導体装置の製造方法および洗浄装置 |
JP4864504B2 (ja) * | 2006-03-24 | 2012-02-01 | Sumco Techxiv株式会社 | シリコンウェーハの結晶欠陥検査方法及び装置 |
SG138524A1 (en) * | 2006-06-22 | 2008-01-28 | Siltronic Ag | Method and apparatus for detection of mechanical defects in an ingot piece composed of semiconductor material |
JP2008008636A (ja) | 2006-06-27 | 2008-01-17 | Reitetsukusu:Kk | 端部検査装置の校正方法 |
JP2008198966A (ja) * | 2007-02-08 | 2008-08-28 | Nippon Electro Sensari Device Kk | ウエーハ欠陥検査装置 |
JP2011033449A (ja) * | 2009-07-31 | 2011-02-17 | Sumco Corp | ウェーハの欠陥検査方法及び欠陥検査装置 |
-
2008
- 2008-06-27 JP JP2008192829A patent/JP4358889B1/ja active Active
- 2008-12-09 US US12/451,703 patent/US8654191B2/en active Active
- 2008-12-09 KR KR1020097025835A patent/KR101296015B1/ko active IP Right Grant
- 2008-12-09 CN CN2008801007852A patent/CN101933130B/zh not_active Expired - Fee Related
- 2008-12-09 WO PCT/JP2008/072725 patent/WO2009157105A1/ja active Application Filing
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9786045B2 (en) | 2010-05-11 | 2017-10-10 | Sumco Corporation | Wafer defect inspection apparatus and method for inspecting a wafer defect |
CN111307819A (zh) * | 2020-03-16 | 2020-06-19 | 上海华力微电子有限公司 | 晶圆边缘缺陷检测系统及方法 |
CN111307819B (zh) * | 2020-03-16 | 2024-03-08 | 上海华力微电子有限公司 | 晶圆边缘缺陷检测系统及方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100165095A1 (en) | 2010-07-01 |
WO2009157105A1 (ja) | 2009-12-30 |
KR20100023861A (ko) | 2010-03-04 |
CN101933130B (zh) | 2013-07-24 |
US8654191B2 (en) | 2014-02-18 |
CN101933130A (zh) | 2010-12-29 |
JP2010008392A (ja) | 2010-01-14 |
KR101296015B1 (ko) | 2013-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4358889B1 (ja) | ウエーハ欠陥検査装置 | |
EP2993463B1 (en) | Fluorescence imaging autofocus systems and methods | |
US20100220185A1 (en) | Object Inspection System | |
CN112469992A (zh) | 利用图像传感器的表面缺陷检查装置及检查方法 | |
KR20120129547A (ko) | 멀티라인센서 카메라와 다중조명을 사용한 시편 고속검사장치 | |
JP2008198966A (ja) | ウエーハ欠陥検査装置 | |
US20100171962A1 (en) | System and Method for Probe Mark Analysis | |
US10209203B2 (en) | Wafer inspection apparatus and wafer inspection method | |
TWI410606B (zh) | 用於高解析度處理具有欲成像微觀形體之大體平坦工件之裝置,用於蒐集具有微觀形體之工件影像之方法,及用於檢驗微觀物件之系統 | |
CN209992407U (zh) | 线面阵相机结合的大口径超净光滑表面缺陷检测装置 | |
JP2006292412A (ja) | 表面検査装置、表面検査方法、及び基板の製造方法 | |
JP2011145160A (ja) | マルチフォーカス検査装置及びマルチフォーカス検査方法 | |
JP2008175818A (ja) | 表面検査装置及び方法 | |
US20030160953A1 (en) | System for inspecting the surfaces of objects | |
JP2007198761A (ja) | 欠陥検出方法および装置 | |
TWI764801B (zh) | 用於量測穿通孔之幾何參數的方法及系統 | |
JP2005274156A (ja) | 欠陥検査装置 | |
JPH11248643A (ja) | 透明フィルムの異物検査装置 | |
JP2004212353A (ja) | 光学的検査装置 | |
JPWO2019244303A1 (ja) | 波面センサ、波面計測装置および波面計測方法 | |
CN213812821U (zh) | 一种光学检测设备 | |
JP2002214155A (ja) | 被検査物の欠陥検査装置 | |
JP2006003168A (ja) | 表面形状の測定方法およびその装置 | |
TWI608227B (zh) | 光學表面掃描系統及方法 | |
JPH09297107A (ja) | 欠陥検査装置及びその調整方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20081203 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20081203 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20090217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090303 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20090401 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090424 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090728 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090806 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120814 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4358889 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120814 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150814 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |