JP6036670B2 - シリコン単結晶基板の欠陥濃度評価方法 - Google Patents

シリコン単結晶基板の欠陥濃度評価方法 Download PDF

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JP6036670B2
JP6036670B2 JP2013255250A JP2013255250A JP6036670B2 JP 6036670 B2 JP6036670 B2 JP 6036670B2 JP 2013255250 A JP2013255250 A JP 2013255250A JP 2013255250 A JP2013255250 A JP 2013255250A JP 6036670 B2 JP6036670 B2 JP 6036670B2
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single crystal
concentration
crystal substrate
silicon single
irradiation
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JP2015115404A5 (enExample
JP2015115404A (ja
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洋之 鎌田
洋之 鎌田
星　亮二
亮二 星
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to DE112014005230.2T priority patent/DE112014005230B4/de
Priority to US15/036,915 priority patent/US9773710B2/en
Priority to CN201480066875.XA priority patent/CN105814676B/zh
Priority to PCT/JP2014/005680 priority patent/WO2015087485A1/ja
Priority to KR1020167014761A priority patent/KR102029647B1/ko
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    • H10P74/203—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/06—Investigating concentration of particle suspensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
    • H10D64/01336—
    • H10P14/2905—
    • H10P14/3458—
    • H10P74/207—
    • H10P74/235—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

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  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
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  • General Health & Medical Sciences (AREA)
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  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
JP2013255250A 2013-12-10 2013-12-10 シリコン単結晶基板の欠陥濃度評価方法 Active JP6036670B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013255250A JP6036670B2 (ja) 2013-12-10 2013-12-10 シリコン単結晶基板の欠陥濃度評価方法
US15/036,915 US9773710B2 (en) 2013-12-10 2014-11-12 Method for evaluating concentration of defect in silicon single crystal substrate
CN201480066875.XA CN105814676B (zh) 2013-12-10 2014-11-12 单晶硅基板的缺陷浓度评价方法
PCT/JP2014/005680 WO2015087485A1 (ja) 2013-12-10 2014-11-12 シリコン単結晶基板の欠陥濃度評価方法
DE112014005230.2T DE112014005230B4 (de) 2013-12-10 2014-11-12 Verfahren zur Auswertung der Konzentration eines Defekts in einem Silizium-Einkristall-Substrat
KR1020167014761A KR102029647B1 (ko) 2013-12-10 2014-11-12 실리콘 단결정 기판의 결함 농도 평가 방법

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Application Number Priority Date Filing Date Title
JP2013255250A JP6036670B2 (ja) 2013-12-10 2013-12-10 シリコン単結晶基板の欠陥濃度評価方法

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JP2015115404A JP2015115404A (ja) 2015-06-22
JP2015115404A5 JP2015115404A5 (enExample) 2016-06-30
JP6036670B2 true JP6036670B2 (ja) 2016-11-30

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US (1) US9773710B2 (enExample)
JP (1) JP6036670B2 (enExample)
KR (1) KR102029647B1 (enExample)
CN (1) CN105814676B (enExample)
DE (1) DE112014005230B4 (enExample)
WO (1) WO2015087485A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160097200A (ko) * 2013-12-10 2016-08-17 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 기판의 결함 농도 평가 방법

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CN107112370B (zh) * 2015-06-30 2020-08-28 富士电机株式会社 半导体装置及其制造方法
JP6531729B2 (ja) * 2016-07-19 2019-06-19 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
JP6805015B2 (ja) * 2017-02-10 2020-12-23 グローバルウェーハズ・ジャパン株式会社 検量線の作成方法、炭素濃度測定方法及びシリコンウェハの製造方法
JP6844561B2 (ja) * 2018-03-09 2021-03-17 信越半導体株式会社 酸素濃度評価方法
JP6852703B2 (ja) * 2018-03-16 2021-03-31 信越半導体株式会社 炭素濃度評価方法
JP7006517B2 (ja) * 2018-06-12 2022-01-24 信越半導体株式会社 シリコン単結晶基板中の欠陥密度の制御方法
JP7351266B2 (ja) * 2020-07-07 2023-09-27 信越半導体株式会社 半導体装置の製造方法
JP7322832B2 (ja) 2020-07-29 2023-08-08 信越半導体株式会社 量子コンピュータ用半導体装置の製造方法
CN112034008A (zh) * 2020-09-11 2020-12-04 电子科技大学 一种石墨烯晶体结构质量评价方法
CN119290973B (zh) * 2024-12-10 2025-05-30 江西联创光电超导应用有限公司 一种晶体缺陷检测分析方法及系统

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JPH08102545A (ja) 1994-09-30 1996-04-16 Meidensha Corp 半導体素子のライフタイム制御方法
JPH0955415A (ja) * 1995-08-16 1997-02-25 Nippon Telegr & Teleph Corp <Ntt> 半導体中に発生した欠陥の評価方法
JP3984521B2 (ja) * 2002-09-20 2007-10-03 松下電器産業株式会社 透過型電子顕微鏡による観察方法
WO2004035879A1 (ja) * 2002-10-18 2004-04-29 Sumitomo Mitsubishi Silicon Corporation シリコン単結晶インゴットの点欠陥分布を測定する方法
WO2006134662A1 (ja) * 2005-06-17 2006-12-21 Topcon Corporation 薄膜測定装置、薄膜測定方法および薄膜製造方法
US8037761B2 (en) * 2006-03-03 2011-10-18 Niigata University Quantitative evaluation device and method of atomic vacancy existing in silicon wafer
JP2008177296A (ja) * 2007-01-17 2008-07-31 Toyota Central R&D Labs Inc 半導体装置、ｐｎダイオード、ｉｇｂｔ、及びそれらの製造方法
JP4358889B1 (ja) * 2008-06-27 2009-11-04 日本エレクトロセンサリデバイス株式会社 ウエーハ欠陥検査装置
US8771415B2 (en) * 2008-10-27 2014-07-08 Sumco Corporation Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer
JP5515406B2 (ja) * 2009-05-15 2014-06-11 株式会社Ｓｕｍｃｏ シリコンウェーハおよびその製造方法
JP5757237B2 (ja) * 2009-07-23 2015-07-29 住友電気工業株式会社 半導体結晶の製造方法および製造装置
JP5519305B2 (ja) 2010-01-25 2014-06-11 トヨタ自動車株式会社 炭化珪素単結晶の欠陥検出方法
JP5561217B2 (ja) * 2011-03-18 2014-07-30 信越半導体株式会社 ライフタイム値の測定方法及びこれを用いたウエーハの選別方法
JP5678846B2 (ja) * 2011-09-08 2015-03-04 信越半導体株式会社 シリコン単結晶中窒素濃度算出方法および抵抗シフト量算出方法
JP5772553B2 (ja) * 2011-12-06 2015-09-02 信越半導体株式会社 シリコン単結晶の評価方法およびシリコン単結晶の製造方法
JP6036670B2 (ja) 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法
US9759689B2 (en) * 2014-05-02 2017-09-12 The Regents Of The University Of Michigan Real-time detection and imaging of terahertz pulse radiation by using photoacoustic conversion

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160097200A (ko) * 2013-12-10 2016-08-17 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 기판의 결함 농도 평가 방법
KR102029647B1 (ko) 2013-12-10 2019-10-08 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 기판의 결함 농도 평가 방법

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Publication number Publication date
WO2015087485A1 (ja) 2015-06-18
US20160300768A1 (en) 2016-10-13
JP2015115404A (ja) 2015-06-22
US9773710B2 (en) 2017-09-26
KR20160097200A (ko) 2016-08-17
DE112014005230B4 (de) 2025-04-30
CN105814676B (zh) 2018-08-28
DE112014005230T5 (de) 2016-08-18
CN105814676A (zh) 2016-07-27
KR102029647B1 (ko) 2019-10-08

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