KR101964937B1 - 반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법 - Google Patents

반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법 Download PDF

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KR101964937B1
KR101964937B1 KR1020157013185A KR20157013185A KR101964937B1 KR 101964937 B1 KR101964937 B1 KR 101964937B1 KR 1020157013185 A KR1020157013185 A KR 1020157013185A KR 20157013185 A KR20157013185 A KR 20157013185A KR 101964937 B1 KR101964937 B1 KR 101964937B1
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wafer
epitaxial
semiconductor
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semiconductor wafer
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KR20150066598A (ko
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타케시 카도노
카주나리 쿠리타
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가부시키가이샤 사무코
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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  • Chemical Vapour Deposition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020157013185A 2012-11-13 2013-11-11 반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법 Active KR101964937B1 (ko)

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JPJP-P-2012-249335 2012-11-13
JP2012249335A JP6278591B2 (ja) 2012-11-13 2012-11-13 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
PCT/JP2013/006629 WO2014076933A1 (ja) 2012-11-13 2013-11-11 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法

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KR20150066598A KR20150066598A (ko) 2015-06-16
KR101964937B1 true KR101964937B1 (ko) 2019-04-02

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KR1020177005839A Active KR101837454B1 (ko) 2012-11-13 2013-11-11 반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법

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US (3) US20160181313A1 (https=)
JP (1) JP6278591B2 (https=)
KR (2) KR101964937B1 (https=)
CN (1) CN104781918B (https=)
DE (1) DE112013005407B4 (https=)
TW (1) TWI549188B (https=)
WO (1) WO2014076933A1 (https=)

Families Citing this family (25)

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Publication number Priority date Publication date Assignee Title
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KR20150134543A (ko) * 2014-05-22 2015-12-02 삼성전자주식회사 소자 제조용 기판 및 반도체 소자
EP3113224B1 (en) 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
JP6493104B2 (ja) * 2015-09-03 2019-04-03 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、品質予測方法および品質評価方法
JP6485315B2 (ja) * 2015-10-15 2019-03-20 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
JP6987057B2 (ja) 2015-12-04 2021-12-22 グローバルウェーハズ カンパニー リミテッドGlobalWafers Co., Ltd. 低酸素含有シリコンを生産するシステム及び方法
JP6459948B2 (ja) * 2015-12-15 2019-01-30 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
JP6504082B2 (ja) 2016-02-29 2019-04-24 株式会社Sumco 半導体エピタキシャルウェーハおよびその製造方法ならびに固体撮像素子の製造方法
JP6737066B2 (ja) * 2016-08-22 2020-08-05 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法
JP2018098266A (ja) * 2016-12-08 2018-06-21 キヤノン株式会社 光電変換装置、光電変換装置の製造方法およびカメラ
JP6766700B2 (ja) * 2017-03-08 2020-10-14 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハおよび固体撮像素子の製造方法
EP3428325B1 (en) 2017-07-10 2019-09-11 Siltronic AG Semiconductor wafer made of single-crystal silicon and process for the production thereof
JP6787268B2 (ja) * 2017-07-20 2020-11-18 株式会社Sumco 半導体エピタキシャルウェーハおよびその製造方法、ならびに固体撮像素子の製造方法
JP6801682B2 (ja) * 2018-02-27 2020-12-16 株式会社Sumco 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法
JP6819631B2 (ja) * 2018-02-27 2021-01-27 株式会社Sumco エピタキシャルシリコンウェーハの不純物ゲッタリング能力の評価方法
JP6874718B2 (ja) * 2018-03-01 2021-05-19 株式会社Sumco 半導体エピタキシャルウェーハの製造方法
JP6988843B2 (ja) * 2019-02-22 2022-01-05 株式会社Sumco 半導体エピタキシャルウェーハ及びその製造方法
US11271079B2 (en) 2020-01-15 2022-03-08 Globalfoundries U.S. Inc. Wafer with crystalline silicon and trap rich polysilicon layer
JP7259791B2 (ja) * 2020-03-25 2023-04-18 株式会社Sumco シリコンウェーハへのクラスターイオン注入による白傷欠陥低減効果の評価方法及びエピタキシャルシリコンウェーハの製造方法
WO2022044562A1 (ja) * 2020-08-26 2022-03-03 株式会社Sumco エピタキシャルシリコンウェーハ及びその製造方法、並びに半導体デバイスの製造方法
CN113109415B (zh) * 2021-03-26 2024-06-14 南昌大学 一种适用于二次离子质谱分析的多层膜界面位置表征方法
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JP7658332B2 (ja) 2021-11-04 2025-04-08 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
CN115928205B (zh) * 2022-12-15 2025-08-12 西安奕斯伟材料科技股份有限公司 用于硅片的外延生长方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163216A (ja) * 2001-09-12 2003-06-06 Wacker Nsce Corp エピタキシャルシリコンウエハおよびその製造方法
JP2008294245A (ja) * 2007-05-25 2008-12-04 Shin Etsu Handotai Co Ltd エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP2008311418A (ja) * 2007-06-14 2008-12-25 Shin Etsu Handotai Co Ltd エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
JP2010040864A (ja) 2008-08-06 2010-02-18 Sumco Corp エピタキシャルシリコンウェーハ及びその製造方法
JP2011151318A (ja) 2010-01-25 2011-08-04 Renesas Electronics Corp 半導体装置およびその製造方法
JP2012059849A (ja) * 2010-09-08 2012-03-22 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハおよびシリコンエピタキシャルウェーハの製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2662321B2 (ja) 1991-05-31 1997-10-08 科学技術振興事業団 超低速クラスターイオンビームによる表面処理方法
JP3384506B2 (ja) 1993-03-30 2003-03-10 ソニー株式会社 半導体基板の製造方法
JPH0941138A (ja) 1995-07-31 1997-02-10 Res Dev Corp Of Japan ガスクラスターイオンビームによるイオン注入法
JPH11251322A (ja) * 1998-02-27 1999-09-17 Sony Corp エピタキシャルシリコン基板及び固体撮像装置並びにこれらの製造方法
US6903373B1 (en) * 1999-11-23 2005-06-07 Agere Systems Inc. SiC MOSFET for use as a power switch and a method of manufacturing the same
JP2002134511A (ja) 2000-08-16 2002-05-10 Sony Corp 半導体基板の製造方法および固体撮像装置の製造方法
JP4604889B2 (ja) * 2005-05-25 2011-01-05 株式会社Sumco シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
KR101455404B1 (ko) * 2005-12-09 2014-10-27 세미이큅, 인코포레이티드 탄소 클러스터의 주입에 의한 반도체 디바이스의 제조를위한 시스템 및 방법
JP2007317760A (ja) * 2006-05-24 2007-12-06 Sharp Corp 半導体装置及びその製造方法
KR20090029209A (ko) * 2006-06-13 2009-03-20 세미이큅, 인코포레이티드 이온 주입을 위한 이온 빔 장치 및 방법
US7479466B2 (en) * 2006-07-14 2009-01-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method of heating semiconductor wafer to improve wafer flatness
US7981483B2 (en) * 2007-09-27 2011-07-19 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US20090233004A1 (en) * 2008-03-17 2009-09-17 Tel Epion Inc. Method and system for depositing silicon carbide film using a gas cluster ion beam
US8779462B2 (en) * 2008-05-19 2014-07-15 Infineon Technologies Ag High-ohmic semiconductor substrate and a method of manufacturing the same
JP2010016169A (ja) * 2008-07-03 2010-01-21 Shin Etsu Handotai Co Ltd エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
JP2010062529A (ja) * 2008-08-04 2010-03-18 Toshiba Corp 半導体装置の製造方法
US8263484B2 (en) 2009-03-03 2012-09-11 Sumco Corporation High resistivity silicon wafer and method for manufacturing the same
US8226835B2 (en) * 2009-03-06 2012-07-24 Tel Epion Inc. Ultra-thin film formation using gas cluster ion beam processing
KR101389058B1 (ko) * 2009-03-25 2014-04-28 가부시키가이샤 사무코 실리콘 웨이퍼 및 그 제조방법
WO2011125305A1 (ja) * 2010-04-08 2011-10-13 信越半導体株式会社 シリコンエピタキシャルウエーハ、シリコンエピタキシャルウエーハの製造方法、及び半導体素子又は集積回路の製造方法
JP2011253983A (ja) * 2010-06-03 2011-12-15 Disco Abrasive Syst Ltd シリコンウェーハへのゲッタリング層付与方法
US10181402B2 (en) * 2010-08-23 2019-01-15 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US9496139B2 (en) * 2011-05-13 2016-11-15 Sumco Corporation Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device
US9263271B2 (en) * 2012-10-25 2016-02-16 Infineon Technologies Ag Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163216A (ja) * 2001-09-12 2003-06-06 Wacker Nsce Corp エピタキシャルシリコンウエハおよびその製造方法
JP2008294245A (ja) * 2007-05-25 2008-12-04 Shin Etsu Handotai Co Ltd エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP2008311418A (ja) * 2007-06-14 2008-12-25 Shin Etsu Handotai Co Ltd エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
JP2010040864A (ja) 2008-08-06 2010-02-18 Sumco Corp エピタキシャルシリコンウェーハ及びその製造方法
JP2011151318A (ja) 2010-01-25 2011-08-04 Renesas Electronics Corp 半導体装置およびその製造方法
JP2012059849A (ja) * 2010-09-08 2012-03-22 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハおよびシリコンエピタキシャルウェーハの製造方法

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