KR101862500B1 - 광학 기판, 반도체 발광 소자 및 반도체 발광 소자의 제조 방법 - Google Patents

광학 기판, 반도체 발광 소자 및 반도체 발광 소자의 제조 방법 Download PDF

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KR101862500B1
KR101862500B1 KR1020167035141A KR20167035141A KR101862500B1 KR 101862500 B1 KR101862500 B1 KR 101862500B1 KR 1020167035141 A KR1020167035141 A KR 1020167035141A KR 20167035141 A KR20167035141 A KR 20167035141A KR 101862500 B1 KR101862500 B1 KR 101862500B1
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KR20160148052A (ko
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준 고이케
요시미치 미타무라
후지토 야마구치
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아사히 가세이 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H01L33/22—
    • H01L21/0243—
    • H01L21/0254—
    • H01L21/02658—
    • H01L22/12—
    • H01L33/007—
    • H01L33/20—
    • H01L33/32—
    • H01L33/58—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials

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KR1020167035141A 2012-04-02 2013-03-29 광학 기판, 반도체 발광 소자 및 반도체 발광 소자의 제조 방법 Expired - Fee Related KR101862500B1 (ko)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
JPJP-P-2012-084208 2012-04-02
JP2012084208 2012-04-02
JP2012103489 2012-04-27
JPJP-P-2012-103489 2012-04-27
JP2012103490 2012-04-27
JPJP-P-2012-103490 2012-04-27
JP2012227295 2012-10-12
JPJP-P-2012-227295 2012-10-12
JP2012267488 2012-12-06
JPJP-P-2012-267377 2012-12-06
JPJP-P-2012-267488 2012-12-06
JP2012267377 2012-12-06
JPJP-P-2012-280241 2012-12-21
JP2012280241 2012-12-21
PCT/JP2013/059635 WO2013150984A1 (ja) 2012-04-02 2013-03-29 光学基板、半導体発光素子及び半導体発光素子の製造方法

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KR1020147025962A Division KR101763460B1 (ko) 2012-04-02 2013-03-29 광학 기판, 반도체 발광 소자 및 반도체 발광 소자의 제조 방법

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KR20160148052A KR20160148052A (ko) 2016-12-23
KR101862500B1 true KR101862500B1 (ko) 2018-05-29

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KR1020147025962A Expired - Fee Related KR101763460B1 (ko) 2012-04-02 2013-03-29 광학 기판, 반도체 발광 소자 및 반도체 발광 소자의 제조 방법

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Country Link
US (1) US9614136B2 (https=)
EP (5) EP2942819A1 (https=)
JP (1) JP6235459B2 (https=)
KR (2) KR101862500B1 (https=)
CN (1) CN104205370B (https=)
BR (1) BR112014024516A2 (https=)
IN (1) IN2014MN01916A (https=)
RU (1) RU2604568C2 (https=)
TW (1) TWI531086B (https=)
WO (1) WO2013150984A1 (https=)

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