JP6235459B2 - 光学基板、半導体発光素子及び半導体発光素子の製造方法 - Google Patents

光学基板、半導体発光素子及び半導体発光素子の製造方法 Download PDF

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JP6235459B2
JP6235459B2 JP2014509138A JP2014509138A JP6235459B2 JP 6235459 B2 JP6235459 B2 JP 6235459B2 JP 2014509138 A JP2014509138 A JP 2014509138A JP 2014509138 A JP2014509138 A JP 2014509138A JP 6235459 B2 JP6235459 B2 JP 6235459B2
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convex
concavo
optical substrate
substrate
pave
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JPWO2013150984A1 (ja
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潤 古池
潤 古池
哲理 三田村
哲理 三田村
布士人 山口
布士人 山口
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Asahi Kasei Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials

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JP2014509138A 2012-04-02 2013-03-29 光学基板、半導体発光素子及び半導体発光素子の製造方法 Expired - Fee Related JP6235459B2 (ja)

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JP2012084208 2012-04-02
JP2012084208 2012-04-02
JP2012103489 2012-04-27
JP2012103490 2012-04-27
JP2012103490 2012-04-27
JP2012103489 2012-04-27
JP2012227295 2012-10-12
JP2012227295 2012-10-12
JP2012267488 2012-12-06
JP2012267488 2012-12-06
JP2012267377 2012-12-06
JP2012267377 2012-12-06
JP2012280241 2012-12-21
JP2012280241 2012-12-21
PCT/JP2013/059635 WO2013150984A1 (ja) 2012-04-02 2013-03-29 光学基板、半導体発光素子及び半導体発光素子の製造方法

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JPWO2013150984A1 JPWO2013150984A1 (ja) 2015-12-17
JP6235459B2 true JP6235459B2 (ja) 2017-11-22

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US (1) US9614136B2 (https=)
EP (5) EP2942819A1 (https=)
JP (1) JP6235459B2 (https=)
KR (2) KR101862500B1 (https=)
CN (1) CN104205370B (https=)
BR (1) BR112014024516A2 (https=)
IN (1) IN2014MN01916A (https=)
RU (1) RU2604568C2 (https=)
TW (1) TWI531086B (https=)
WO (1) WO2013150984A1 (https=)

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EP2835836A4 (en) 2015-08-05
KR101763460B1 (ko) 2017-07-31
WO2013150984A1 (ja) 2013-10-10
TWI531086B (zh) 2016-04-21
EP2942820A1 (en) 2015-11-11
EP2942821A1 (en) 2015-11-11
KR20140133867A (ko) 2014-11-20
EP2835836A1 (en) 2015-02-11
KR20160148052A (ko) 2016-12-23
BR112014024516A2 (pt) 2017-07-25
EP2835836B1 (en) 2019-06-19
TW201344959A (zh) 2013-11-01
EP2942822A1 (en) 2015-11-11
RU2014144362A (ru) 2016-05-27
CN104205370B (zh) 2017-03-22
EP2942819A1 (en) 2015-11-11
KR101862500B1 (ko) 2018-05-29
US9614136B2 (en) 2017-04-04
IN2014MN01916A (https=) 2015-07-10
US20150048380A1 (en) 2015-02-19
JPWO2013150984A1 (ja) 2015-12-17
RU2604568C2 (ru) 2016-12-10
CN104205370A (zh) 2014-12-10

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