JP2013009004A - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP2013009004A JP2013009004A JP2012209513A JP2012209513A JP2013009004A JP 2013009004 A JP2013009004 A JP 2013009004A JP 2012209513 A JP2012209513 A JP 2012209513A JP 2012209513 A JP2012209513 A JP 2012209513A JP 2013009004 A JP2013009004 A JP 2013009004A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light extraction
- light
- emitting device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
【解決手段】本発明の発光素子は、金属又は半導体からなる支持層;支持層上に位置する第1の電極;第1の電極上に位置し、発光層を含む多層構造の半導体層;及び半導体層上に配置され、少なくとも一つのホール又は柱形状の単位構造で形成される光抽出構造;を含む。光抽出構造はランダムに配置され、光抽出構造の高さは、nを光抽出構造が形成された物質の屈折率とし、λを発光層の中心波長とした場合にλ/2n〜3000ナノメートルであり、光抽出構造の周期又は隣接する単位構造の各中心間の平均距離は400〜3000ナノメートルであり、光抽出構造の単位構造はホール又は柱形状であり、単位構造の内側表面の半径と外側表面の半径とが互いに異なる。
【選択図】図1
Description
(ここで、mは、0を含む自然数である。)
20 反射膜
30 エポキシ
40 無反射コーティング
Claims (14)
- 金属又は半導体からなる支持層;
前記支持層上に位置する第1の電極;
前記第1の電極上に位置し、発光層を含む多層構造の半導体層;及び
前記半導体層上に配置され、少なくとも一つのホール又は柱形状の単位構造で形成される光抽出構造;を含み、
前記光抽出構造はランダムに配置され、前記光抽出構造の高さは、nを光抽出構造が形成された物質の屈折率とし、λを前記発光層の中心波長とした場合にλ/2n〜3000ナノメートルであり、前記光抽出構造の周期又は隣接する単位構造の各中心間の平均距離は400〜3000ナノメートルであり、前記光抽出構造の単位構造はホール又は柱形状であり、前記単位構造の内側表面の半径と外側表面の半径とが互いに異なる発光素子。 - 前記単位構造は柱形状で、前記単位構造の外側表面の半径が前記内側表面の半径より大きい、請求項1に記載の発光素子。
- 前記光抽出構造は、四角格子、三角格子、アルキメディアン格子、準クリスタル構造及び準ランダム構造で構成される群から選ばれた一つの光結晶構造である、請求項1に記載の発光素子。
- 前記単位構造は、上辺の長さが大きい等辺台形の形状である、請求項1に記載の発光素子。
- 前記単位構造の側壁の傾斜面の傾斜と、前記単位構造の半径と、前記光抽出構造の格子構造は、前記光抽出構造の平均フィリングファクターが主光放出表面の全体面積に対して15%〜37%をなすように配置され、前記フィリングファクターは、前記単位構造が占める面積である、請求項1に記載の発光素子。
- 前記光抽出構造は前記半導体層と同一の材料からなる、請求項1に記載の発光素子。
- 前記光抽出構造の屈折率は前記半導体層の屈折率と異なる、請求項1に記載の発光素子。
- 前記光抽出構造は前記半導体層上に配置される光抽出層で形成される、請求項1に記載の発光素子。
- 前記光抽出構造の単位構造は前記光抽出層で形成される、請求項8に記載の発光素子。
- 前記光抽出層は2層以上である、請求項8に記載の発光素子。
- 前記nは前記光抽出層又は半導体層の屈折率のうち最も高い屈折率である、請求項8に記載の発光素子。
- 前記光抽出層は誘電物質を含む、請求項8に記載の発光素子。
- 前記半導体層の表面が光抽出構造をなし、前記半導体層の表面に配置された電極をさらに含む、請求項1に記載の発光素子。
- 前記光抽出構造は前記半導体層の表面に形成され、前記半導体層の表面に形成される電極をさらに含む、請求項1に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070108745A KR100900288B1 (ko) | 2007-10-29 | 2007-10-29 | 발광 소자 |
KR10-2007-0108745 | 2007-10-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007310693A Division JP2009111323A (ja) | 2007-10-29 | 2007-11-30 | 発光素子及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013009004A true JP2013009004A (ja) | 2013-01-10 |
Family
ID=40386449
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007310693A Pending JP2009111323A (ja) | 2007-10-29 | 2007-11-30 | 発光素子及びその製造方法 |
JP2012209513A Pending JP2013009004A (ja) | 2007-10-29 | 2012-09-24 | 発光素子 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007310693A Pending JP2009111323A (ja) | 2007-10-29 | 2007-11-30 | 発光素子及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7755097B2 (ja) |
EP (2) | EP2403021B1 (ja) |
JP (2) | JP2009111323A (ja) |
KR (1) | KR100900288B1 (ja) |
TW (1) | TWI350599B (ja) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100921466B1 (ko) | 2007-08-30 | 2009-10-13 | 엘지전자 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
KR100900288B1 (ko) | 2007-10-29 | 2009-05-29 | 엘지전자 주식회사 | 발광 소자 |
US7985979B2 (en) | 2007-12-19 | 2011-07-26 | Koninklijke Philips Electronics, N.V. | Semiconductor light emitting device with light extraction structures |
US8207547B2 (en) | 2009-06-10 | 2012-06-26 | Brudgelux, Inc. | Thin-film LED with P and N contacts electrically isolated from the substrate |
KR100993094B1 (ko) * | 2010-02-01 | 2010-11-08 | 엘지이노텍 주식회사 | 발광소자 및 발광소자 패키지 |
TWI404236B (zh) * | 2010-02-09 | 2013-08-01 | Walsin Lihwa Corp | 增益發光二極體出光效率的方法 |
KR100969100B1 (ko) | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR101746011B1 (ko) * | 2010-07-21 | 2017-06-12 | 엘지이노텍 주식회사 | 발광소자 |
KR101795053B1 (ko) * | 2010-08-26 | 2017-11-07 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지, 라이트 유닛 |
TWI641287B (zh) | 2010-09-14 | 2018-11-11 | 半導體能源研究所股份有限公司 | 固態發光元件,發光裝置和照明裝置 |
JP5827104B2 (ja) | 2010-11-19 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 照明装置 |
JP6118020B2 (ja) | 2010-12-16 | 2017-04-19 | 株式会社半導体エネルギー研究所 | 発光装置 |
GB2487917B (en) * | 2011-02-08 | 2015-03-18 | Seren Photonics Ltd | Semiconductor devices and fabrication methods |
US8735874B2 (en) | 2011-02-14 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, and method for manufacturing the same |
KR101922603B1 (ko) | 2011-03-04 | 2018-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 조명 장치, 기판, 기판의 제작 방법 |
JP5050109B2 (ja) * | 2011-03-14 | 2012-10-17 | 株式会社東芝 | 半導体発光素子 |
JP2012204103A (ja) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | 有機電界発光素子、表示装置および照明装置 |
KR101294000B1 (ko) * | 2011-12-16 | 2013-08-07 | (재)한국나노기술원 | 임프린트 스템프를 이용한 발광다이오드 소자의 제조 방법 |
CN103367585B (zh) * | 2012-03-30 | 2016-04-13 | 清华大学 | 发光二极管 |
JP2016178234A (ja) * | 2015-03-20 | 2016-10-06 | 株式会社東芝 | 半導体受光デバイス |
EP3188260B1 (en) * | 2015-12-31 | 2020-02-12 | Dow Global Technologies Llc | Nanostructure material structures and methods |
FR3052915A1 (fr) * | 2016-06-17 | 2017-12-22 | Commissariat Energie Atomique | Procede de fabrication d'une diode electroluminescente au nitrure de gallium |
GB2573576B (en) * | 2018-05-11 | 2020-06-10 | Rockley Photonics Ltd | Optoelectronic device and method of manufacturing thereof |
US11588137B2 (en) | 2019-06-05 | 2023-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, display device, input/output device, and data processing device |
US11659758B2 (en) | 2019-07-05 | 2023-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Display unit, display module, and electronic device |
US11844236B2 (en) | 2019-07-12 | 2023-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, display device, input/output device, and data processing device |
JP7017761B2 (ja) * | 2019-10-29 | 2022-02-09 | セイコーエプソン株式会社 | 発光装置、プロジェクター、およびディスプレイ |
CN112133812A (zh) * | 2020-09-15 | 2020-12-25 | 湖州市汉新科技有限公司 | 高热导荧光薄膜、制备方法及在led或激光照明的应用 |
CN112420899B (zh) * | 2020-09-29 | 2022-06-14 | 湖州市汉新科技有限公司 | 高显指高热导荧光薄膜、制备方法及在显示设备中的应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006049855A (ja) * | 2004-06-28 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
WO2006103933A1 (ja) * | 2005-03-28 | 2006-10-05 | Stanley Electric Co., Ltd. | 自発光デバイス |
JP2007220971A (ja) * | 2006-02-17 | 2007-08-30 | Showa Denko Kk | 発光素子及びその製造方法、並びにランプ |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3739217A (en) | 1969-06-23 | 1973-06-12 | Bell Telephone Labor Inc | Surface roughening of electroluminescent diodes |
US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
JP4131998B2 (ja) * | 1998-04-30 | 2008-08-13 | 佐々木 実 | 透明な半導体受光素子およびその製造方法 |
JP2002008868A (ja) * | 2000-06-16 | 2002-01-11 | Seiko Epson Corp | 面発光装置 |
JP3882539B2 (ja) | 2000-07-18 | 2007-02-21 | ソニー株式会社 | 半導体発光素子およびその製造方法、並びに画像表示装置 |
TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
US7533775B2 (en) * | 2001-10-04 | 2009-05-19 | The University Of Nottingham | Separation of fine granular materials |
KR100940530B1 (ko) * | 2003-01-17 | 2010-02-10 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
US7221512B2 (en) * | 2002-01-24 | 2007-05-22 | Nanoventions, Inc. | Light control material for displaying color information, and images |
AU2003207287B2 (en) | 2002-01-28 | 2007-12-13 | Nichia Corporation | Nitride semiconductor device having support substrate and its manufacturing method |
DE10234977A1 (de) | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis |
WO2005015647A1 (en) * | 2003-08-08 | 2005-02-17 | Vichel Inc. | Nitride micro light emitting diode with high brightness and method of manufacturing the same |
US7302379B2 (en) * | 2003-12-07 | 2007-11-27 | Adaptive Spectrum And Signal Alignment, Inc. | DSL system estimation and parameter recommendation |
KR100730537B1 (ko) | 2004-06-25 | 2007-06-20 | 학교법인 성균관대학 | 질화갈륨계 수직구조 발광다이오드 및 그 제조방법 |
US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
US7129567B2 (en) * | 2004-08-31 | 2006-10-31 | Micron Technology, Inc. | Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements |
KR20050029167A (ko) | 2005-02-17 | 2005-03-24 | 이강재 | 광결정 공진기를 갖는 질화물반도체 발광소자 |
US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
JP2006294907A (ja) * | 2005-04-12 | 2006-10-26 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
KR100958590B1 (ko) | 2005-08-19 | 2010-05-18 | 한빔 주식회사 | 광추출 효율을 높인 발광다이오드 소자 및 이의 제조방법 |
WO2007031929A1 (en) | 2005-09-16 | 2007-03-22 | Koninklijke Philips Electronics N.V. | Method for manufacturing led wafer with light extracting layer |
JP5035248B2 (ja) * | 2006-09-12 | 2012-09-26 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子並びにこれを備えた照明装置及び表示装置 |
KR100809227B1 (ko) * | 2006-10-27 | 2008-03-05 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 제조 방법 |
KR100900288B1 (ko) * | 2007-10-29 | 2009-05-29 | 엘지전자 주식회사 | 발광 소자 |
-
2007
- 2007-10-29 KR KR1020070108745A patent/KR100900288B1/ko active IP Right Review Request
- 2007-11-28 TW TW096145211A patent/TWI350599B/zh active
- 2007-11-30 US US11/948,828 patent/US7755097B2/en active Active
- 2007-11-30 JP JP2007310693A patent/JP2009111323A/ja active Pending
- 2007-12-03 EP EP11180573.5A patent/EP2403021B1/en active Active
- 2007-12-03 EP EP07254673.2A patent/EP2056368B1/en active Active
-
2010
- 2010-06-15 US US12/816,258 patent/US8004003B2/en active Active
-
2011
- 2011-08-02 US US13/196,648 patent/US9178112B2/en active Active
-
2012
- 2012-09-24 JP JP2012209513A patent/JP2013009004A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006049855A (ja) * | 2004-06-28 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
WO2006103933A1 (ja) * | 2005-03-28 | 2006-10-05 | Stanley Electric Co., Ltd. | 自発光デバイス |
JP2007220971A (ja) * | 2006-02-17 | 2007-08-30 | Showa Denko Kk | 発光素子及びその製造方法、並びにランプ |
Also Published As
Publication number | Publication date |
---|---|
TWI350599B (en) | 2011-10-11 |
EP2056368B1 (en) | 2019-02-13 |
US20110287564A1 (en) | 2011-11-24 |
US8004003B2 (en) | 2011-08-23 |
US20100308363A1 (en) | 2010-12-09 |
TW200919782A (en) | 2009-05-01 |
EP2403021B1 (en) | 2020-02-05 |
US7755097B2 (en) | 2010-07-13 |
EP2056368A1 (en) | 2009-05-06 |
US20090108279A1 (en) | 2009-04-30 |
KR100900288B1 (ko) | 2009-05-29 |
JP2009111323A (ja) | 2009-05-21 |
US9178112B2 (en) | 2015-11-03 |
EP2403021A1 (en) | 2012-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2013009004A (ja) | 発光素子 | |
JP5179087B2 (ja) | 発光素子 | |
Kanamori et al. | High efficient light-emitting diodes with antireflection subwavelength gratings | |
US8148890B2 (en) | Light-emitting device and method for manufacturing the same | |
US20120112218A1 (en) | Light Emitting Diode with Polarized Light Emission | |
KR20140133867A (ko) | 광학 기판, 반도체 발광 소자 및 반도체 발광 소자의 제조 방법 | |
KR20090022424A (ko) | 질화물계 발광 소자 및 그 제조방법 | |
JP2011060966A (ja) | 発光装置 | |
KR100886821B1 (ko) | 전기적 특성을 향상한 광자결정 발광 소자 및 제조방법 | |
KR20080093558A (ko) | 질화물계 발광 소자 | |
TWI481084B (zh) | 光學裝置及其製作方法 | |
JP4509997B2 (ja) | 窒化ガリウム系発光ダイオード素子の製造方法 | |
KR101233768B1 (ko) | 나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드 | |
KR101317632B1 (ko) | 질화물계 발광 소자 및 그 제조방법 | |
TWI593137B (zh) | 具有異質材料結構之發光元件及其製造方法 | |
WO2012045222A1 (zh) | 发光装置及其制造方法 | |
KR100558134B1 (ko) | 질화 갈륨계 반도체 led 소자 | |
KR101145891B1 (ko) | 역반사막을 구비한 엘이디 및 그 제작방법 | |
JP5334925B2 (ja) | 発光素子 | |
KR101221075B1 (ko) | 나노 임프린트를 이용한 질화갈륨계 발광 다이오드 제조방법과 이를 통해 제조된 발광 다이오드 소자 | |
JP2009289947A (ja) | 発光素子及び照明装置 | |
KR101104564B1 (ko) | 발광 다이오드의 광추출 효율을 높이기 위한 광결정 패터닝 방법 및 이에 따른 발광 다이오드 | |
KR20110117856A (ko) | 발광다이오드 소자 및 그 제조 방법 | |
KR20070101421A (ko) | 발광 다이오드 | |
JP2010153594A (ja) | 発光素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121024 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130626 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130716 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20130802 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131015 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20131018 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131018 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131118 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20131118 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20131217 |