KR101850121B1 - 용장성 실리콘 관통 비아를 구비한 반도체 칩 및 그 제조방법 - Google Patents

용장성 실리콘 관통 비아를 구비한 반도체 칩 및 그 제조방법 Download PDF

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KR101850121B1
KR101850121B1 KR1020137007011A KR20137007011A KR101850121B1 KR 101850121 B1 KR101850121 B1 KR 101850121B1 KR 1020137007011 A KR1020137007011 A KR 1020137007011A KR 20137007011 A KR20137007011 A KR 20137007011A KR 101850121 B1 KR101850121 B1 KR 101850121B1
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semiconductor chip
conductive
conductor
conductive vias
layer
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KR20130097766A (ko
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브라이언 블랙
마이클 제트. 수
자말 레파이-아메드
조 시겔
세트 프리진
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
에이티아이 테크놀로지스 유엘씨
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US20120061821A1 (en) 2012-03-15
US12094853B2 (en) 2024-09-17
KR20130097766A (ko) 2013-09-03
JP6013336B2 (ja) 2016-10-25
JP2013538460A (ja) 2013-10-10
EP2614523B1 (en) 2020-11-25
US9437561B2 (en) 2016-09-06
US11469212B2 (en) 2022-10-11
WO2012034034A1 (en) 2012-03-15
US20230031099A1 (en) 2023-02-02
EP2614523A1 (en) 2013-07-17
US20160365335A1 (en) 2016-12-15

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