JP2013538460A5 - - Google Patents
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- Publication number
- JP2013538460A5 JP2013538460A5 JP2013528332A JP2013528332A JP2013538460A5 JP 2013538460 A5 JP2013538460 A5 JP 2013538460A5 JP 2013528332 A JP2013528332 A JP 2013528332A JP 2013528332 A JP2013528332 A JP 2013528332A JP 2013538460 A5 JP2013538460 A5 JP 2013538460A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive
- semiconductor chip
- layer
- tsvs
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 80
- 239000004020 conductor Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 39
- 229910000679 solder Inorganic materials 0.000 claims description 30
- 229920000642 polymer Polymers 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 2
- 241000724291 Tobacco streak virus Species 0.000 description 45
- 238000001465 metallisation Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000007747 plating Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- -1 96.5% Chemical compound 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/878,542 US9437561B2 (en) | 2010-09-09 | 2010-09-09 | Semiconductor chip with redundant thru-silicon-vias |
| US12/878,542 | 2010-09-09 | ||
| PCT/US2011/051027 WO2012034034A1 (en) | 2010-09-09 | 2011-09-09 | Semiconductor chip with redundant thru-silicon-vias |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013538460A JP2013538460A (ja) | 2013-10-10 |
| JP2013538460A5 true JP2013538460A5 (enExample) | 2014-10-30 |
| JP6013336B2 JP6013336B2 (ja) | 2016-10-25 |
Family
ID=44653600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013528332A Active JP6013336B2 (ja) | 2010-09-09 | 2011-09-09 | 冗長シリコン貫通ビアを伴う半導体チップ |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US9437561B2 (enExample) |
| EP (1) | EP2614523B1 (enExample) |
| JP (1) | JP6013336B2 (enExample) |
| KR (1) | KR101850121B1 (enExample) |
| WO (1) | WO2012034034A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5826532B2 (ja) * | 2010-07-15 | 2015-12-02 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| US8314498B2 (en) * | 2010-09-10 | 2012-11-20 | Aptina Imaging Corporation | Isolated bond pad with conductive via interconnect |
| WO2013057886A1 (ja) * | 2011-10-17 | 2013-04-25 | パナソニック株式会社 | 集積回路、マルチコアプロセッサ装置及び集積回路の製造方法 |
| US9030010B2 (en) * | 2012-09-20 | 2015-05-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging devices and methods |
| US8866287B2 (en) * | 2012-09-29 | 2014-10-21 | Intel Corporation | Embedded structures for package-on-package architecture |
| CN104037149A (zh) * | 2013-03-05 | 2014-09-10 | 飞思卡尔半导体公司 | 引线框和基板半导体封装 |
| WO2014209330A1 (en) * | 2013-06-27 | 2014-12-31 | Intel IP Corporation | High conductivity high frequency via for electronic systems |
| JP2015041691A (ja) * | 2013-08-21 | 2015-03-02 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| US9389972B2 (en) | 2014-05-13 | 2016-07-12 | International Business Machines Corporation | Data retrieval from stacked computer memory |
| US9405468B2 (en) | 2014-05-13 | 2016-08-02 | Globalfoundries Inc. | Stacked memory device control |
| KR101640076B1 (ko) * | 2014-11-05 | 2016-07-15 | 앰코 테크놀로지 코리아 주식회사 | 웨이퍼 레벨의 칩 적층형 패키지 및 이의 제조 방법 |
| US9515017B2 (en) * | 2014-12-18 | 2016-12-06 | Intel Corporation | Ground via clustering for crosstalk mitigation |
| US9515035B2 (en) | 2014-12-19 | 2016-12-06 | International Business Machines Corporation | Three-dimensional integrated circuit integration |
| CN105990282B (zh) * | 2015-02-27 | 2019-03-01 | 华为技术有限公司 | 一种转接板及电子组件 |
| US9971970B1 (en) | 2015-04-27 | 2018-05-15 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with VIAS and methods for making the same |
| US10090251B2 (en) | 2015-07-24 | 2018-10-02 | Infineon Technologies Ag | Semiconductor chip having a dense arrangement of contact terminals |
| US10236245B2 (en) * | 2016-03-23 | 2019-03-19 | Dyi-chung Hu | Package substrate with embedded circuit |
| WO2018125069A1 (en) * | 2016-12-28 | 2018-07-05 | Intel Corporation | Methods of forming substrate interconnect structures for enhanced thin seed conduction |
| US11276727B1 (en) | 2017-06-19 | 2022-03-15 | Rigetti & Co, Llc | Superconducting vias for routing electrical signals through substrates and their methods of manufacture |
| US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
| KR102019355B1 (ko) | 2017-11-01 | 2019-09-09 | 삼성전자주식회사 | 반도체 패키지 |
| KR102498883B1 (ko) | 2018-01-31 | 2023-02-13 | 삼성전자주식회사 | 전류를 분산시키는 관통 전극들을 포함하는 반도체 장치 |
| TWI705547B (zh) * | 2019-03-12 | 2020-09-21 | 力成科技股份有限公司 | 晶片封裝結構及其製造方法 |
| US11804479B2 (en) * | 2019-09-27 | 2023-10-31 | Advanced Micro Devices, Inc. | Scheme for enabling die reuse in 3D stacked products |
| KR20210071539A (ko) | 2019-12-06 | 2021-06-16 | 삼성전자주식회사 | 인터포저, 반도체 패키지, 및 인터포저의 제조 방법 |
| US11515173B2 (en) * | 2019-12-27 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacturing |
| CN113053758A (zh) | 2019-12-27 | 2021-06-29 | 台湾积体电路制造股份有限公司 | 半导体器件的制造方法 |
| TWI773360B (zh) * | 2021-06-03 | 2022-08-01 | 矽品精密工業股份有限公司 | 電子封裝件及其承載結構與製法 |
| US11955417B2 (en) | 2021-12-14 | 2024-04-09 | Industrial Technology Research Institute | Electronic device having substrate with electrically floating vias |
| US12292603B2 (en) | 2022-09-19 | 2025-05-06 | Globalfoundries U.S. Inc. | PIC structure with wire(s) between z-stop supports on side of optical device attach cavity |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124240A (ja) | 1984-07-13 | 1986-02-01 | Toshiba Corp | 半導体基板 |
| US6355950B1 (en) * | 1998-09-23 | 2002-03-12 | Intel Corporation | Substrate interconnect for power distribution on integrated circuits |
| US6352923B1 (en) * | 1999-03-01 | 2002-03-05 | United Microelectronics Corp. | Method of fabricating direct contact through hole type |
| JP4123682B2 (ja) * | 2000-05-16 | 2008-07-23 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
| US7345350B2 (en) * | 2003-09-23 | 2008-03-18 | Micron Technology, Inc. | Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias |
| JP4426482B2 (ja) | 2005-02-28 | 2010-03-03 | Ｏｋｉセミコンダクタ株式会社 | パッケージ基台およびその製造方法、並びにそのパッケージ基台を備えた半導体パッケージ |
| US20070032059A1 (en) * | 2005-08-02 | 2007-02-08 | Harry Hedler | Method of manufacturing a semiconductor structure having a wafer through-contact and a corresponding semiconductor structure |
| US20070045844A1 (en) * | 2005-08-24 | 2007-03-01 | Andry Paul S | Alpha particle shields in chip packaging |
| JP4847072B2 (ja) | 2005-08-26 | 2011-12-28 | 本田技研工業株式会社 | 半導体集積回路装置およびその製造方法 |
| JP4415984B2 (ja) | 2006-12-06 | 2010-02-17 | ソニー株式会社 | 半導体装置の製造方法 |
| JP2008244187A (ja) * | 2007-03-28 | 2008-10-09 | Elpida Memory Inc | 貫通電極および半導体装置 |
| JP4534096B2 (ja) | 2007-04-12 | 2010-09-01 | ローム株式会社 | 半導体チップおよびその製造方法、ならびに半導体装置 |
| US8134235B2 (en) * | 2007-04-23 | 2012-03-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional semiconductor device |
| KR101052870B1 (ko) * | 2008-04-21 | 2011-07-29 | 주식회사 하이닉스반도체 | 관통 전극, 이를 갖는 회로 기판, 이를 갖는 반도체 패키지및 반도체 패키지를 갖는 적층 반도체 패키지 |
| JP2009295616A (ja) | 2008-06-02 | 2009-12-17 | Philtech Inc | シリコン基板、デバイスの製造方法、デバイスおよびテスト方法 |
| US7939449B2 (en) * | 2008-06-03 | 2011-05-10 | Micron Technology, Inc. | Methods of forming hybrid conductive vias including small dimension active surface ends and larger dimension back side ends |
| US8288872B2 (en) | 2008-08-05 | 2012-10-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through silicon via layout |
| JP2010135348A (ja) | 2008-12-02 | 2010-06-17 | Panasonic Corp | 貫通電極形成方法 |
| US8232137B2 (en) * | 2009-12-10 | 2012-07-31 | Intersil Americas Inc. | Heat conduction for chip stacks and 3-D circuits |
| US20110193212A1 (en) * | 2010-02-08 | 2011-08-11 | Qualcomm Incorporated | Systems and Methods Providing Arrangements of Vias |
-
2010
- 2010-09-09 US US12/878,542 patent/US9437561B2/en active Active
-
2011
- 2011-09-09 WO PCT/US2011/051027 patent/WO2012034034A1/en not_active Ceased
- 2011-09-09 EP EP11758061.3A patent/EP2614523B1/en active Active
- 2011-09-09 JP JP2013528332A patent/JP6013336B2/ja active Active
- 2011-09-09 KR KR1020137007011A patent/KR101850121B1/ko active Active
-
2016
- 2016-08-25 US US15/247,259 patent/US11469212B2/en active Active
-
2022
- 2022-10-11 US US17/963,729 patent/US12094853B2/en active Active
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