KR101837454B1 - 반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법 - Google Patents

반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법 Download PDF

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KR101837454B1
KR101837454B1 KR1020177005839A KR20177005839A KR101837454B1 KR 101837454 B1 KR101837454 B1 KR 101837454B1 KR 1020177005839 A KR1020177005839 A KR 1020177005839A KR 20177005839 A KR20177005839 A KR 20177005839A KR 101837454 B1 KR101837454 B1 KR 101837454B1
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wafer
semiconductor
epitaxial
epitaxial wafer
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KR20170026669A (ko
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타케시 카도노
카주나리 쿠리타
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가부시키가이샤 사무코
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  • Chemical Vapour Deposition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020177005839A 2012-11-13 2013-11-11 반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법 Active KR101837454B1 (ko)

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Application Number Priority Date Filing Date Title
JP2012249335A JP6278591B2 (ja) 2012-11-13 2012-11-13 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
JPJP-P-2012-249335 2012-11-13
PCT/JP2013/006629 WO2014076933A1 (ja) 2012-11-13 2013-11-11 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法

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KR20170026669A KR20170026669A (ko) 2017-03-08
KR101837454B1 true KR101837454B1 (ko) 2018-03-12

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KR1020157013185A Active KR101964937B1 (ko) 2012-11-13 2013-11-11 반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법

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US (3) US20160181313A1 (https=)
JP (1) JP6278591B2 (https=)
KR (2) KR101837454B1 (https=)
CN (1) CN104781918B (https=)
DE (1) DE112013005407B4 (https=)
TW (1) TWI549188B (https=)
WO (1) WO2014076933A1 (https=)

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KR20230065175A (ko) * 2021-11-04 2023-05-11 가부시키가이샤 사무코 실리콘 웨이퍼 및 에피택셜 실리콘 웨이퍼
KR20230065174A (ko) * 2021-11-04 2023-05-11 가부시키가이샤 사무코 실리콘 웨이퍼 및 에피택셜 실리콘 웨이퍼
US12527054B2 (en) 2021-11-04 2026-01-13 Sumco Corporation Silicon wafer and epitaxial silicon wafer

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JP6260100B2 (ja) * 2013-04-03 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
KR20150134543A (ko) * 2014-05-22 2015-12-02 삼성전자주식회사 소자 제조용 기판 및 반도체 소자
EP3113224B1 (en) 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
JP6493104B2 (ja) * 2015-09-03 2019-04-03 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、品質予測方法および品質評価方法
JP6485315B2 (ja) * 2015-10-15 2019-03-20 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
EP3831987A1 (en) 2015-12-04 2021-06-09 GlobalWafers Co., Ltd. Systems and methods for production of low oxygen content silicon
JP6459948B2 (ja) 2015-12-15 2019-01-30 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
JP6504082B2 (ja) * 2016-02-29 2019-04-24 株式会社Sumco 半導体エピタキシャルウェーハおよびその製造方法ならびに固体撮像素子の製造方法
JP6737066B2 (ja) * 2016-08-22 2020-08-05 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法
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