KR101731847B1 - 스퍼터링용 MgO 타겟 - Google Patents

스퍼터링용 MgO 타겟 Download PDF

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KR101731847B1
KR101731847B1 KR1020147002558A KR20147002558A KR101731847B1 KR 101731847 B1 KR101731847 B1 KR 101731847B1 KR 1020147002558 A KR1020147002558 A KR 1020147002558A KR 20147002558 A KR20147002558 A KR 20147002558A KR 101731847 B1 KR101731847 B1 KR 101731847B1
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South Korea
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mgo
mol
sputtering
powder
changed
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KR20140054010A (ko
Inventor
사토루 사노
요시히로 니시무라
타카유키 와타나베
유우조우 카토우
아키라 우에키
신조 미토미
마사노부 타카스
유스케 하라
타카아키 타나카
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우베 마테리알즈 가부시키가이샤
니혼텅스텐 가부시키가이샤
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KR1020147002558A 2011-07-01 2012-06-29 스퍼터링용 MgO 타겟 Expired - Fee Related KR101731847B1 (ko)

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JPJP-P-2011-147026 2011-07-01
JP2011147026 2011-07-01
JPJP-P-2012-011746 2012-01-24
JP2012011746 2012-01-24
PCT/JP2012/066789 WO2013005690A1 (ja) 2011-07-01 2012-06-29 スパッタリング用MgOターゲット

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KR20140054010A KR20140054010A (ko) 2014-05-08
KR101731847B1 true KR101731847B1 (ko) 2017-05-08

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US (1) US9773652B2 (enExample)
JP (2) JP5413540B2 (enExample)
KR (1) KR101731847B1 (enExample)
CN (1) CN103687977B (enExample)
WO (1) WO2013005690A1 (enExample)

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Publication number Priority date Publication date Assignee Title
JP5925907B2 (ja) * 2013-03-29 2016-05-25 Jx金属株式会社 MgO−TiO焼結体ターゲット及びその製造方法
JP5935780B2 (ja) * 2013-09-30 2016-06-15 Tdk株式会社 スパッタリングターゲット
JP5949718B2 (ja) * 2013-09-30 2016-07-13 Tdk株式会社 スパッタリングターゲット
TW201527566A (zh) * 2014-01-06 2015-07-16 Kojundo Chemical Lab Co Ltd 濺鍍靶
WO2016088867A1 (ja) * 2014-12-05 2016-06-09 宇部マテリアルズ株式会社 スパッタリング用MgOターゲット材及び薄膜
JP6570175B2 (ja) * 2015-08-18 2019-09-04 株式会社高純度化学研究所 直流スパッタ用スパッタリングターゲットおよびその製造方法
JP6489694B2 (ja) * 2015-09-08 2019-03-27 株式会社高純度化学研究所 スパッタリングターゲット
JP6396594B2 (ja) * 2016-03-29 2018-09-26 Jx金属株式会社 Mg−Ti−Oスパッタリングターゲット及びその製造方法
JP7057069B2 (ja) * 2017-03-30 2022-04-19 Jx金属株式会社 スパッタリングターゲット
JP7014541B2 (ja) * 2017-07-21 2022-02-01 Jx金属株式会社 スパッタリングターゲット、スパッタリングターゲットの製造方法及び磁気媒体の製造方法
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