KR101711352B1 - 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 - Google Patents

노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 Download PDF

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Publication number
KR101711352B1
KR101711352B1 KR1020167000800A KR20167000800A KR101711352B1 KR 101711352 B1 KR101711352 B1 KR 101711352B1 KR 1020167000800 A KR1020167000800 A KR 1020167000800A KR 20167000800 A KR20167000800 A KR 20167000800A KR 101711352 B1 KR101711352 B1 KR 101711352B1
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KR
South Korea
Prior art keywords
liquid
substrate
liquid immersion
optical system
supply
Prior art date
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Expired - Fee Related
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KR1020167000800A
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English (en)
Korean (ko)
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KR20160009710A (ko
Inventor
히로유키 나가사카
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가부시키가이샤 니콘
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Publication of KR101711352B1 publication Critical patent/KR101711352B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020167000800A 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 Expired - Fee Related KR101711352B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003146424 2003-05-23
JPJP-P-2003-146424 2003-05-23
PCT/JP2004/007415 WO2004105106A1 (ja) 2003-05-23 2004-05-24 露光方法及び露光装置並びにデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020157011154A Division KR101619724B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177004805A Division KR101864557B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20160009710A KR20160009710A (ko) 2016-01-26
KR101711352B1 true KR101711352B1 (ko) 2017-02-28

Family

ID=33475300

Family Applications (12)

Application Number Title Priority Date Filing Date
KR1020157011154A Expired - Fee Related KR101619724B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020187014459A Abandoned KR20180058855A (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020057022145A Expired - Fee Related KR101102286B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020127010587A Expired - Fee Related KR101376017B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020137030195A Expired - Fee Related KR101464098B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020167000800A Expired - Fee Related KR101711352B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020177004805A Expired - Fee Related KR101864557B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020137016409A Expired - Fee Related KR101544655B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020117016819A Expired - Fee Related KR101311564B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020137006891A Expired - Fee Related KR101411799B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020147017521A Expired - Fee Related KR101498439B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020137031353A Expired - Fee Related KR101472249B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법

Family Applications Before (5)

Application Number Title Priority Date Filing Date
KR1020157011154A Expired - Fee Related KR101619724B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020187014459A Abandoned KR20180058855A (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020057022145A Expired - Fee Related KR101102286B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020127010587A Expired - Fee Related KR101376017B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020137030195A Expired - Fee Related KR101464098B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법

Family Applications After (6)

Application Number Title Priority Date Filing Date
KR1020177004805A Expired - Fee Related KR101864557B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020137016409A Expired - Fee Related KR101544655B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020117016819A Expired - Fee Related KR101311564B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020137006891A Expired - Fee Related KR101411799B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020147017521A Expired - Fee Related KR101498439B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
KR1020137031353A Expired - Fee Related KR101472249B1 (ko) 2003-05-23 2004-05-24 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법

Country Status (7)

Country Link
US (9) US7495744B2 (enExample)
EP (6) EP3048487B1 (enExample)
JP (10) JP5353811B2 (enExample)
KR (12) KR101619724B1 (enExample)
HK (3) HK1205282A1 (enExample)
TW (9) TWI614794B (enExample)
WO (1) WO2004105106A1 (enExample)

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CN101061429B (zh) 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
KR101323993B1 (ko) 2003-04-10 2013-10-30 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
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DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
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TWI379344B (en) 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
JP4525676B2 (ja) 2004-03-25 2010-08-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
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JP3870207B2 (ja) * 2004-08-05 2007-01-17 キヤノン株式会社 液浸露光装置及びデバイス製造方法
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CN101002303B (zh) * 2004-12-07 2012-05-23 尼康股份有限公司 曝光装置及元件制造方法
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8638422B2 (en) 2005-03-18 2014-01-28 Nikon Corporation Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus
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